M54HCT257F1R [STMICROELECTRONICS]
HCT257 QUAD 2 CHANNEL MULTIPLEXER 3-STATE HCT258 QUAD 2 CHANNEL MULTIPLEXER 3-STATE, INVERTING; HCT257 QUAD 2通道多路复用器3 -STATE HCT258 QUAD 2通道多路复用器三态，反相
| 型号： | M54HCT257F1R |
| 厂家： | 
ST |
| 描述： | HCT257 QUAD 2 CHANNEL MULTIPLEXER 3-STATE HCT258 QUAD 2 CHANNEL MULTIPLEXER 3-STATE, INVERTING |
| 文件： | 总12页 (文件大小：258K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
M54/M74HCT257
M54/M74HCT258
HCT257 QUAD 2 CHANNEL MULTIPLEXER (3-STATE)
HCT258 QUAD 2 CHANNEL MULTIPLEXER (3-STATE, INVERTING)
.
HIGH SPEED
tPD = 16 ns (TYP.) at VCC = 5 V
LOW POWER DISSIPATION
ICC = 4 µA (MAX.) at TA = 25 °C
COMPATIBLE WITH TTL OUTPUTS
VIH = 2V (MIN.) VIL = 0.8V (MAX)
OUTPUT DRIVE CAPABILITY
15 LSTTL LOADS
SYMMETRICAL OUTPUT IMPEDANCE
IOH = IOL = 6 mA (MIN.)
BALANCED PROPAGATION DELAYS
tPLH = tPHL
PIN AND FUNCTION COMPATIBLE
.
.
.
.
.
.
B1R
F1R
(Plastic Package)
(Ceramic Package)
M1R
C1R
(Micro Package)
(Chip Carrier)
WITH 54/74LS257/258
ORDER CODES :
M54HCTXXXF1R
M74HCTXXXM1R
M74HCTXXXB1R
M74HCTXXXC1R
PIN CONNECTIONS (top view)
HCT257
DESCRIPTION
The M54/74HCT257 and the M54/74HCT258 are
high speed CMOS MULTIPLEXERs fabricated with
silicon gate C2MOS technology.
They have the same high speed performance of
LSTTL combined with true CMOS low power con-
sumption.
These IC’s are composed of an independent 2-
channelmultiplexer with commonSELECT and EN-
ABLE INPUT.
The M54/74HCT258 is an inverting multiplexer
while the M54/74HCT257 is a non-inverting multi-
plexer. When the ENABLE INPUT is held ”High”,
outputs of both IC’s become high-impedance state.
If SELECTINPUTis held”Low”, ”A” datais selected,
when SELECT INPUT is high ”H”, ”B” data is
chosen.
HCT258
All inputs are equipped with protection circuits
against static discharge and transient excess volt-
age.
This integrated circuit has input and output charac-
teristics that are fully compatible with 54/74 LSTTL
logic families. M54/74HCT devices are designed to
directly interface HSC2MOS systems with TTL and
NMOS components. They are also plug in replace-
February 1993
1/12
M54/M74HCT257/258
INPUT AND OUTPUT EQUIVALENT CIRCUIT
CHIP CARRIER
HCT257
HCT258
NC = No Internal Connection
PIN DESCRIPTION (HCT257)
PIN DESCRIPTION (HCT258)
PIN No
SYMBOL
NAME AND FUNCTION
PIN No
SYMBOL
NAME AND FUNCTION
1
SELECT
Common Data Select
Input
1
SELECT
Common Data Select
Input
2, 5, 14, 11 1A to 4A
3, 6, 13, 10 1B to 4B
Data Input From Source A
Data Inputs from Source B
2, 5, 14, 11 1A to 4A
3, 6, 13, 10 1B to 4B
Data Input From Source A
Data Inputs from Source B
4, 7, 12, 9
1Y to 4Y
3 State Multiplexer
Outputs
4, 7, 12, 9
1Y to 4Y
3 State Multiplexer
Outputs
15
OE
3 State Output Enable
Inputs (Active LOW)
15
OE
3 State Output Enable
Inputs (Active LOW)
8
GND
VCC
Ground (0V)
8
GND
VCC
Ground (0V)
16
Positive Supply Voltage
16
Positive Supply Voltage
2/12
M54/M74HCT257/258
HCT258
IEC LOGIC SYMBOL
HCT257
LOGIC DIAGRAM
HCT257
HCT258
TRUTH TABLE
INPUTS
OUTPUTS
OE
H
L
SELECT
A
X
L
B
X
X
X
L
Y (257)
Y (258)
X
L
Z
L
Z
H
L
L
L
H
X
X
H
L
L
H
H
H
L
L
H
H
X = DON’T CARE Z = HIGH IMPEDANCE
3/12
M54/M74HCT257/258
ABSOLUTE MAXIMUM RATINGS
Symbol
VCC
VI
Parameter
Value
-0.5 to +7
-0.5 to VCC + 0.5
-0.5 to VCC + 0.5
± 20
Unit
V
Supply Voltage
DC Input Voltage
V
VO
DC Output Voltage
V
IIK
DC Input Diode Current
DC Output Diode Current
DC Output Source Sink Current Per Output Pin
mA
mA
mA
mA
mW
oC
IOK
± 20
IO
± 35
ICC or IGND DC VCC or Ground Current
± 70
PD
Tstg
TL
Power Dissipation
500 (*)
Storage Temperature
Lead Temperature (10 sec)
-65 to +150
300
oC
Absolute MaximumRatingsare those values beyond whichdamage tothe device may occur. Functional operation under these condition isnotimplied.
(*) 500 mW: 65 oC derate to 300 mW by 10mW/oC: 65 oC to 85 oC
RECOMMENDED OPERATING CONDITIONS
Symbol
VCC
VI
Parameter
Value
4.5 to 5.5
0 to VCC
0 to VCC
Unit
V
Supply Voltage
Input Voltage
Output Voltage
V
VO
V
Top
Operating Temperature: M54HC Series
M74HC Series
-55 to +125
-40 to +85
oC
oC
tr, tf
Input Rise and Fall Time (VCC = 4.5 to 5.5V)
0 to 500
ns
4/12
M54/M74HCT257/258
DC SPECIFICATIONS
Test Conditions
VCC
Value
-40 to 85 oC -55 to 125 oC
74HC 54HC
TA = 25 oC
54HC and 74HC
Symbol
VIH
Parameter
Unit
V
(V)
Min. Typ. Max. Min. Max. Min. Max.
High Level Input
Voltage
4.5
to
2.0
2.0
2.0
5.5
VIL
Low Level Input
Voltage
4.5
to
0.8
0.8
0.8
V
5.5
VOH
High Level
VI = IO=-20 µA
4.4
4.5
4.4
4.4
Output Voltage
VIH
or
VIL
4.5
4.5
V
V
IO=-4.0 mA 4.18 4.31
4.13
4.10
VOL
Low Level Output
Voltage
VI = IO= 20 µA
VIH
or
VIL
0.0
0.1
0.1
0.33
±5
0.1
0.4
±10
±1
IO= 4.0 mA
0.17 0.26
IOZ
II
ICC
∆ICC
3-State Output
Off State Current
5.5 VI = VCC or GND
5.5 VI = VCC or GND
±0.5
±0.1
1
µA
µA
µA
mA
Input Leakage
Current
±1
Quiescent Supply 5.5 VI = VCC or GND
Current
10
20
Additional worst
case supply
current
5.5
Per Input pin
VI = 0.5V or
VI = 2.4V
2.0
2.9
3.0
Other Inputs at
VCC or GND
5/12
M54/M74HCT257/258
AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6 ns)
Test Conditions
Value
TA = 25 oC
54HC and 74HC
-40 to 85 oC -55 to 125 oC
Symbol
Parameter
Unit
VCC
74HC
54HC
(V)
4.5
Min. Typ. Max. Min. Max. Min. Max.
tTLH
tTHL
tPLH
tPHL
Output Transition
Time
7
12
15
18
ns
ns
Propagation
Delay Time
(A, B - Y)
4.5
4.5
19
17
20
30
27
30
38
34
38
45
41
45
HCT257
HCT258
tPLH
tPHL
Propagation
Delay Time
(SELECT - Y)
ns
tPZL
tPZH
tPLZ
tPHZ
Output Enable
Time
4.5
4.5
RL = 1 KΩ
RL = 1 KΩ
18
16
30
30
10
38
38
10
45
45
10
ns
ns
Output Disable
Time
CIN
Input Capacitance
5
pF
pF
COUT
Output
Capacitance
10
CPD (*) Power Dissipation
Capacitance
HCT257
HCT258
34
33
pF
(*) CPD isdefined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without load.
(Refer to Test Circuit). Average operting current can be obtained by the followingequation. ICC(opr) = CPD • VCC • fIN + ICC/4 (per Channel)
6/12
M54/M74HCT257/258
SWITCHING CHARACTERISTICS TEST WAVEFORM
TEST CIRCUIT ICC (Opr.)
CPD CALCULATION
CPD is to be calculated with the following
formula by using the measured value of
ICC (opr.) in the test circuit opposite.
I
CC (opr)
CPD
=
fIN × VCC
INPUT WAVEFORM IS THE SAME AS THAT IN CASE OF
SWITCHINGCHARACTERSISTICSTESt.
7/12
M54/M74HCT257/258
Plastic DIP16 (0.25) MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
0.51
0.77
TYP.
MAX.
MIN.
0.020
0.030
MAX.
a1
B
b
1.65
0.065
0.5
0.020
0.010
b1
D
E
e
0.25
20
0.787
8.5
2.54
17.78
0.335
0.100
0.700
e3
F
7.1
5.1
0.280
0.201
I
L
3.3
0.130
Z
1.27
0.050
P001C
8/12
M54/M74HCT257/258
Ceramic DIP16/1 MECHANICAL DATA
mm
inch
DIM.
MIN.
TYP.
MAX.
20
MIN.
TYP.
MAX.
0.787
0.276
A
B
7
D
E
3.3
0.130
0.700
0.38
0.015
e3
F
17.78
2.29
0.4
2.79
0.55
1.52
0.31
1.27
10.3
8.05
5.08
0.090
0.016
0.046
0.009
0.020
0.110
0.022
0.060
0.012
0.050
0.406
0.317
0.200
G
H
L
1.17
0.22
0.51
M
N
P
7.8
0.307
Q
P053D
9/12
M54/M74HCT257/258
SO16 (Narrow) MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
TYP.
MAX.
1.75
0.2
MIN.
MAX.
0.068
0.007
0.064
0.018
0.010
A
a1
a2
b
0.1
0.004
1.65
0.46
0.25
0.35
0.19
0.013
0.007
b1
C
0.5
0.019
c1
D
45° (typ.)
9.8
5.8
10
0.385
0.228
0.393
0.244
E
6.2
e
1.27
8.89
0.050
0.350
e3
F
3.8
4.6
0.5
4.0
5.3
0.149
0.181
0.019
0.157
0.208
0.050
0.024
G
L
1.27
0.62
M
S
8° (max.)
P013H
10/12
M54/M74HCT257/258
PLCC20 MECHANICAL DATA
mm
inch
DIM.
MIN.
9.78
8.89
4.2
TYP.
MAX.
10.03
9.04
MIN.
0.385
0.350
0.165
TYP.
MAX.
0.395
0.356
0.180
A
B
D
4.57
d1
d2
E
2.54
0.56
0.100
0.022
7.37
8.38
0.290
0.330
0.004
e
1.27
5.08
0.38
0.050
0.200
0.015
e3
F
G
0.101
M
M1
1.27
1.14
0.050
0.045
P027A
11/12
M54/M74HCT257/258
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specificationsmentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronicsproductsare notauthorized foruse ascritical componentsin life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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12/12
相关型号：
M54HCT258
HCT257 QUAD 2 CHANNEL MULTIPLEXER 3-STATE HCT258 QUAD 2 CHANNEL MULTIPLEXER 3-STATE, INVERTING
STMICROELECTR
M54HCT258F1R
HCT257 QUAD 2 CHANNEL MULTIPLEXER 3-STATE HCT258 QUAD 2 CHANNEL MULTIPLEXER 3-STATE, INVERTING
STMICROELECTR
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