M58WR064FB60ZB6F
更新时间:2024-09-18 06:28:41
描述:64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory
M58WR064FB60ZB6F 概述
64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory 64兆位( 4Mb的X16 ,多个银行,连拍) 1.8V供应快闪记忆体 闪存
M58WR064FB60ZB6F 规格参数
是否Rohs认证: | 符合 | 生命周期: | Transferred |
零件包装代码: | BGA | 包装说明: | 7.70 X 9 MM, 0.75 MM PITCH, LEAD FREE, VFBGA-56 |
针数: | 56 | Reach Compliance Code: | unknown |
ECCN代码: | 3A991.B.1.A | HTS代码: | 8542.32.00.51 |
风险等级: | 5.33 | Is Samacsys: | N |
最长访问时间: | 60 ns | 其他特性: | SYNCHRONOUS BURST MODE OPERATION POSSIBLE |
启动块: | BOTTOM | 命令用户界面: | YES |
通用闪存接口: | YES | 数据轮询: | NO |
JESD-30 代码: | R-PBGA-B56 | JESD-609代码: | e1 |
长度: | 9 mm | 内存密度: | 67108864 bit |
内存集成电路类型: | FLASH | 内存宽度: | 16 |
功能数量: | 1 | 部门数/规模: | 8,127 |
端子数量: | 56 | 字数: | 4194304 words |
字数代码: | 4000000 | 工作模式: | ASYNCHRONOUS |
最高工作温度: | 85 °C | 最低工作温度: | -40 °C |
组织: | 4MX16 | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | VFBGA | 封装等效代码: | BGA56,7X8,30 |
封装形状: | RECTANGULAR | 封装形式: | GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
页面大小: | 4 words | 并行/串行: | PARALLEL |
峰值回流温度(摄氏度): | NOT SPECIFIED | 电源: | 1.8 V |
编程电压: | 1.8 V | 认证状态: | Not Qualified |
座面最大高度: | 1 mm | 部门规模: | 4K,32K |
最大待机电流: | 0.000005 A | 子类别: | Flash Memories |
最大压摆率: | 0.05 mA | 最大供电电压 (Vsup): | 2 V |
最小供电电压 (Vsup): | 1.7 V | 标称供电电压 (Vsup): | 1.8 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | INDUSTRIAL | 端子面层: | Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5) |
端子形式: | BALL | 端子节距: | 0.75 mm |
端子位置: | BOTTOM | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
切换位: | NO | 类型: | NOR TYPE |
宽度: | 7.7 mm | Base Number Matches: | 1 |
M58WR064FB60ZB6F 数据手册
通过下载M58WR064FB60ZB6F数据手册来全面了解它。这个PDF文档包含了所有必要的细节,如产品概述、功能特性、引脚定义、引脚排列图等信息。
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