M74HC132B1R [STMICROELECTRONICS]
QUAD 2-INPUT SCHMITT NAND GATE; 四2输入施密特与非门型号: | M74HC132B1R |
厂家: | ST |
描述: | QUAD 2-INPUT SCHMITT NAND GATE |
文件: | 总9页 (文件大小:237K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
M54HC132
M74HC132
QUAD 2-INPUT SCHMITT NAND GATE
.
.
.
.
.
.
.
.
HIGH SPEED
tPD = 11 ns (TYP.) AT VCC = 5 V
LOW POWER DISSIPATION
ICC = 1µA (MAX.) AT TA = 25 °C
OUTPUT DRIVE CAPABILITY
10 LSTTL LOADS
HIGH NOISE IMMUNITY
B1R
(Plastic Package)
F1R
VH (TYP.) = 0.9 V AT VCC = 5 V
SYMMETRICAL OUTPUT IMPEDANCE
IOH = IOL = 4 mA (MIN.)
BALANCED PROPAGATION DELAYS
tPLH = tPHL
WIDE OPERATING VOLTAGE RANGE
VCC (OPR) = 2 V TO 6 V
(Ceramic Package)
M1R
(Micro Package)
C1R
(Chip Carrier)
PIN AND FUNCTION COMPATIBLE
WITH 54/74LS132
ORDER CODES :
M54HC132F1R
M74HC132B1R
M74HC132M1R
M74HC132C1R
DESCRIPTION
The M54/74HC132 isa high speed CMOSQUAD2-
INPUT SCHMITT NAND GATE fabricated in silicon
gate C2MOS technology. It has the same high
speed performance of LSTTL combined with true
CMOS low power consumption. Pin configuration
and function are identical to those of the
M54/74HC00.
PIN CONNECTIONS (top view)
The hysterisis characteristics (around 20 % VCC) of
all inputs allow slowly changing input signals to be
transformed into sharply defined jitter-free output
signals. All inputs are equipped with protection cir-
cuits against static discharge and transient excess
voltage.
INPUT AND OUTPUT EQUIVALENT CIRCUIT
NC =
No Internal
Connection
December 1992
1/9
M54/M74HC132
TRUTH TABLE
IEC LOGIC SYMBOL
A
L
B
L
Y
H
H
H
L
L
H
L
H
H
H
PIN DESCRIPTION
PIN No
1, 4, 9, 12
2, 5, 10, 13
3, 6, 8, 11
7
SYMBOL
1A to 4A
1B to 4B
1Y to 4Y
GND
NAME AND FUNCTION
Data Inputs
Data Inputs
Data Outputs
Ground (0V)
14
VCC
Positive Supply Voltage
BLOCK DIAGRAM
LOGIC DIAGRAM/WAVEFORM
ABSOLUTE MAXIMUM RATINGS
Symbol
VCC
VI
Parameter
Value
-0.5 to +7
-0.5 to VCC + 0.5
-0.5 to VCC + 0.5
± 20
Unit
V
Supply Voltage
DC Input Voltage
V
VO
DC Output Voltage
V
IIK
DC Input Diode Current
DC Output Diode Current
DC Output Source Sink Current Per Output Pin
mA
mA
mA
mA
mW
oC
IOK
± 20
IO
± 25
ICC or IGND DC VCC or Ground Current
± 50
PD
Tstg
TL
Power Dissipation
500 (*)
Storage Temperature
Lead Temperature (10 sec)
-65 to +150
300
oC
Absolute MaximumRatingsare those values beyond whichdamage tothe device may occur. Functional operation under these condition isnotimplied.
(*) 500 mW: 65 oC derate to 300 mW by 10mW/oC: 65 oC to 85 oC
2/9
M54/M74HC132
RECOMMENDED OPERATING CONDITIONS
Symbol
VCC
VI
Parameter
Value
2 to 6
Unit
V
Supply Voltage
Input Voltage
Output Voltage
0 to VCC
0 to VCC
V
VO
V
Top
Operating Temperature: M54HC Series
M74HC Series
-55 to +125
-40 to +85
oC
oC
tr, tf
Input Rise and Fall Time
No Limits
DC SPECIFICATIONS
Test Conditions
VCC
Value
-40 to 85 oC -55 to 125 oC
74HC 54HC
TA = 25 oC
54HC and 74HC
Symbol
Parameter
Unit
(V)
Min. Typ. Max. Min. Max. Min. Max.
VP
High Level
Threshold
Voltage
2.0
4.5
6.0
2.0
4.5
6.0
2.0
4.5
6.0
2.0
4.5
6.0
4.5
6.0
1.0
2.3
3.0
0.3
1.13
1.5
0.3
0.6
0.8
1.9
4.4
5.9
1.25
2.7
3.5
0.65
1.6
2.3
0.6
1.1
1.2
2.0
4.5
6.0
1.5
3.15
4.2
0.9
2.0
2.6
1.0
1.4
1.4
1.0
2.3
1.5
3.15
4.2
0.9
2.0
2.6
1.0
1.4
1.7
1.0
2.3
1.5
3.15
4.2
0.9
2.0
2.6
1.0
1.4
1.7
V
V
V
3.0
3.0
VN
VH
Low Level
Threshold
Voltage
0.3
0.3
1.13
1.5
1.13
1.5
Hysteresis
Voltage
0.3
0.3
0.6
0.6
0.8
0.8
VOH
High Level
Output Voltage
1.9
1.9
VI =
VIH
or
IO=-20 µA
4.4
4.4
V
V
5.9
5.9
VIL
IO=-4.0 mA 4.18 4.31
4.13
5.63
4.10
5.60
IO=-5.2 mA 5.68
5.8
0.0
0.0
0.0
VOL
Low Level Output 2.0
Voltage
0.1
0.1
0.1
0.1
0.1
0.1
0.1
VI =
VIH
or
IO= 20 µA
4.5
6.0
4.5
6.0
0.1
0.1
VIL
IO= 4.0 mA
IO= 5.2 mA
0.17 0.26
0.18 0.26
±0.1
0.33
0.33
±1
0.40
0.40
±1
II
Input Leakage
6.0
VI = VCC or GND
µA
µA
Current
ICC
Quiescent Supply 6.0 VI = VCC or GND
Current
1
10
20
3/9
M54/M74HC132
AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6 ns)
Test Conditions
Value
TA = 25 oC
54HC and 74HC
-40 to 85 oC -55 to 125 oC
Symbol
Parameter
Unit
VCC
(V)
74HC
54HC
Min. Typ. Max. Min. Max. Min. Max.
tTLH
tTHL
Output Transition
Time
2.0
4.5
6.0
2.0
4.5
6.0
30
8
75
15
95
19
110
22
ns
ns
7
13
16
19
tPLH
tPHL
Propagation
Delay Time
52
13
11
5
105
21
130
26
160
32
18
22
27
CIN
Input Capacitance
10
10
10
pF
pF
CPD (*) Power Dissipation
Capacitance
29
(*) CPD isdefined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without load.
(Refer to Test Circuit). Average operting current can be obtained by the followingequation. ICC(opr) = CPD • VCC • fIN + ICC/4 (per Gate)
SWITCHING CHARACTERISTICS TEST CIRCUIT
TEST CIRCUIT ICC (Opr.)
4/9
M54/M74HC132
Plastic DIP14 MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
0.51
1.39
TYP.
MAX.
MIN.
0.020
0.055
MAX.
a1
B
b
1.65
0.065
0.5
0.020
0.010
b1
D
E
e
0.25
20
0.787
8.5
2.54
15.24
0.335
0.100
0.600
e3
F
7.1
5.1
0.280
0.201
I
L
3.3
0.130
Z
1.27
2.54
0.050
0.100
P001A
5/9
M54/M74HC132
Ceramic DIP14/1 MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
TYP.
MAX.
20
MIN.
MAX.
0.787
0.276
A
B
7.0
D
E
3.3
0.130
0.600
0.38
0.015
e3
F
15.24
2.29
0.4
2.79
0.55
1.52
0.31
2.54
10.3
8.05
5.08
0.090
0.016
0.046
0.009
0.060
0.110
0.022
0.060
0.012
0.100
0.406
0.317
0.200
G
H
L
1.17
0.22
1.52
M
N
P
7.8
0.307
Q
P053C
6/9
M54/M74HC132
SO14 MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
TYP.
MAX.
1.75
0.2
MIN.
MAX.
0.068
0.007
0.064
0.018
0.010
A
a1
a2
b
0.1
0.003
1.65
0.46
0.25
0.35
0.19
0.013
0.007
b1
C
0.5
0.019
c1
D
45° (typ.)
8.55
5.8
8.75
6.2
0.336
0.228
0.344
0.244
E
e
1.27
7.62
0.050
0.300
e3
F
3.8
4.6
0.5
4.0
5.3
0.149
0.181
0.019
0.157
0.208
0.050
0.026
G
L
1.27
0.68
M
S
8° (max.)
P013G
7/9
M54/M74HC132
PLCC20 MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
9.78
8.89
4.2
TYP.
MAX.
10.03
9.04
MIN.
0.385
0.350
0.165
MAX.
0.395
0.356
0.180
A
B
D
4.57
d1
d2
E
2.54
0.56
0.100
0.022
7.37
8.38
0.290
0.330
0.004
e
1.27
5.08
0.38
0.050
0.200
0.015
e3
F
G
0.101
M
M1
1.27
1.14
0.050
0.045
P027A
8/9
M54/M74HC132
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specificationsmentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronicsproductsare notauthorized foruse ascritical componentsin life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics - All Rights Reserved
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9/9
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