M74HC623F1R [STMICROELECTRONICS]
OCTAL BUS TRANSCEIVER HC620 3 STATE INVERTING HC623 3 STATE NON INVERTING; 八路总线收发器HC620 3状态INVERTING HC623 3态非反相
| 型号： | M74HC623F1R |
| 厂家： | 
ST |
| 描述： | OCTAL BUS TRANSCEIVER HC620 3 STATE INVERTING HC623 3 STATE NON INVERTING |
| 文件： | 总11页 (文件大小：261K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
M54/74HC620
M54/74HC623
OCTAL BUS TRANSCEIVER
HC620 3 STATE INVERTING HC623 3 STATE NON INVERTING
.
HIGH SPEED
tPD = 10 ns (TYP.) AT VCC = 5 V
LOW POWER DISSIPATION
ICC = 4 µA (MAX.) AT TA = 25 °C
HIGH NOISE IMMUNITY
VNIH = VNIL = 28 % VCC (MIN.)
OUTPUT DRIVE CAPABILITY
15 LSTTL LOADS
SYMMETRICAL OUTPUT IMPEDANCE
|IOH| = IOL = 6 mA (MIN.)
BALANCED PROPAGATION DELAYS
tPLH = tPHL
WIDE OPERATING VOLTAGE RANGE
.
.
.
.
.
.
.
B1R
F1R
(Plastic Package)
(Ceramic Package)
M1R
C1R
(Micro Package)
(Chip Carrier)
VCC (OPR) = 2 V to 6 V
PIN AND FUNCTION COMPATIBLE
WITH LS620/623
ORDER CODES :
M54HCXXXF1R
M74HCXXXM1R
M74HCXXXB1R
M74HCXXXC1R
DESCRIPTION
PIN CONNECTIONS (top view)
The M54/74HC620/623 are high speed CMOS
OCTAL BUS TRANSCEIVERS fabricated in silicon
gate C2MOS technology. They have the same high
speed performance of LSTTL combined with true
CMOS low power consumption.
These octal bus transceivers are designed for asyn-
chronous two-way communication between data
buses. The control function implementation allows
maximum flexibility in timing.
These devices allow data transmission from the A
bus to B bus or from the B to the A bus depending
upon the logic levels at the enable inputs (GBA and
GAB). The enable inputs can be used to disable the
device so that the buses are effectively isolated.
The dual-enable configuration gives these devices
the capability tostoredata by simultaneous enabling
of GBA and GAB.
Each output reinforces its input in this transceiver
configuration. Thus, when both control inputs are
enabled and all other data sources to the two sets
of bus lines are at high impedance, both sets of bus
lines (16 in all) will remain at their last states. The 8-
bit codes appearing on the two sets of buses will be
identical for the ’HC623 or complementary for the
’HC620. All inputs are equipped with protection cir-
cuits against static discharge and transient excess
voltage.
NC =
No Internal
Connection
October 1992
1/11
M54/M74HC620/623
INPUT AND OUTPUT EQUIVALENT CIRCUIT
TRUTH TABLE
INPUTS
FUNCTION
OUTPUS
GAB
GBA
A Bus
Output
Input
B Bus
Input
HC620
A = B
B = A
Z
HC623
A = B
B = A
Z
L
H
L
L
H
H
L
Output
High Impedance
High Impedance
H
Z
Z
LOGIC DIAGRAM
2/11
M54/M74HC620/623
PIN DESCRIPTION
PIN No
SYMBOL
GBA , GAB
A1 to A8
B1 to B8
GND
NAME AND FUNCTION
Direction Controls
1, 19
2, 3, 4, 5, 6, 7, 8, 9
Data Inputs/Outputs
Data Inputs/Outputs
Ground (0V)
11, 12, 13, 14, 15, 16, 17, 18
10
20
VCC
Positive Supply Voltage
IEC LOGIC SYMBOLS
HC620
HC623
ABSOLUTE MAXIMUM RATINGS
Symbol
VCC
VI
Parameter
Value
Unit
V
Supply Voltage
-0.5 to +7
-0.5 to VCC + 0.5
-0.5 to VCC + 0.5
± 20
DC Input Voltage
V
VO
DC Output Voltage
V
IIK
DC Input Diode Current
DC Output Diode Current
DC Output Source Sink Current Per Output Pin
mA
mA
mA
mA
mW
oC
IOK
± 20
IO
± 35
ICC or IGND DC VCC or Ground Current
± 70
PD
Tstg
TL
Power Dissipation
500 (*)
Storage Temperature
Lead Temperature (10 sec)
-65 to +150
300
oC
Absolute MaximumRatingsare those values beyond whichdamage tothe device may occur. Functional operation under these condition isnotimplied.
(*) 500 mW: 65 oC derate to 300 mW by 10mW/oC: 65 oC to 85 oC
3/11
M54/M74HC620/623
RECOMMENDED OPERATING CONDITIONS
Symbol
VCC
VI
Parameter
Value
2 to 6
Unit
V
Supply Voltage
Input Voltage
Output Voltage
0 to VCC
0 to VCC
V
VO
V
Top
Operating Temperature: M54HC Series
M74HC Series
-55 to +125
-40 to +85
oC
oC
tr, tf
Input Rise and Fall Time
VCC = 2 V
VCC = 4.5 V
VCC = 6 V
0 to 1000
0 to 500
0 to 400
ns
DC SPECIFICATIONS
Test Conditions
VCC
Value
-40 to 85 oC -55 to 125 oC
74HC 54HC
TA = 25 oC
54HC and 74HC
Symbol
Parameter
Unit
(V)
Min. Typ. Max. Min. Max. Min. Max.
VIH
High Level Input
Voltage
2.0
4.5
6.0
2.0
4.5
6.0
2.0
4.5
6.0
4.5
6.0
1.5
3.15
4.2
1.5
3.15
4.2
1.5
3.15
4.2
V
V
VIL
Low Level Input
Voltage
0.5
1.35
1.8
0.5
1.35
1.8
0.5
1.35
1.8
VOH
High Level
Output Voltage
1.9
4.4
5.9
2.0
4.5
6.0
1.9
4.4
1.9
4.4
VI =
VIH
or
IO=-20 µA
V
V
5.9
5.9
VIL
IO=-6.0 mA 4.18 4.31
4.13
5.63
4.10
5.60
IO=-7.8 mA 5.68
5.8
0.0
0.0
0.0
VOL
Low Level Output 2.0
Voltage
0.1
0.1
0.1
0.1
0.1
0.1
0.1
VI =
VIH
or
IO= 20 µA
4.5
6.0
4.5
6.0
0.1
0.1
VIL
IO= 6.0 mA
IO= 7.8 mA
0.17 0.26
0.18 0.26
±0.1
0.33
0.33
±1
0.40
0.40
±1
II
Input Leakage
6.0
VI = VCC or GND
µA
µA
µA
Current
IOZ
ICC
3 State Output
6.0
VI = VIH or VIL
VO = VCC or GND
±0.5
±5
±10
Off State Current
Quiescent Supply 6.0 VI = VCC or GND
Current
4
40
80
4/11
M54/M74HC620/623
AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6 ns)
Test Conditions
Value
-40 to 85 oC -55 to 125 oC
74HC 54HC
TA = 25 oC
54HC and 74HC
Symbol
Parameter
Unit
VCC CL
(V) (pF)
2.0
Min. Typ. Max. Min. Max. Min. Max.
tTLH
tTHL
Output Transition
Time
25
7
60
12
75
15
90
18
50
ns
ns
ns
ns
ns
ns
ns
ns
4.5
6.0
2.0
4.5
6.0
2.0
4.5
6.0
2.0
4.5
6.0
2.0
4.5
6.0
2.0
4.5
6.0
2.0
4.5
0
6
10
13
15
tPLH
tPHL
Propagation
Delay Time
(for HC620)
41
12
10
55
16
14
38
12
10
51
16
14
57
19
16
69
23
20
43
18
15
5
100
20
125
25
150
30
50
17
21
26
130
26
165
33
195
39
150
22
28
33
tPLH
tPHL
Propagation
Delay Time
(for HC623)
85
105
21
130
26
50
17
14
18
22
130
26
165
33
195
39
150
22
28
33
tPZL
tPZH
Output Enable
Time
150
30
190
38
225
45
50 RL = 1 KΩ
150 RL = 1 KΩ
50 RL = 1 KΩ
26
32
38
180
36
225
45
270
54
31
38
46
tPLZ
tPHZ
Output Disable
Time
2.0
4.5
6.0
125
25
155
31
190
38
21
26
32
CIN
Input Capacitance
10
10
10
pF
pF
CPD (*) Power Dissipation
Capacitance
for HC620
for HC623
32
34
CPD isdefined as the value of the IC’s internal equivalent capacitance which iscalculated from the operating current consumption without load. (Refer
to Test Circuit). Average operting current can be obtained by the followingequation. ICC(opr) = CPD • VCC • fIN + ICC
5/11
M54/M74HC620/623
SWITCHING CHARACTERISTICS TEST WAVEFORM
V
CC
GND
TEST CIRCUIT ICC (Opr.)
CPD CALCULATION
CPD isto be calculated with the following formula
by using the measured value of ICC (Opr.) in the
test circuit opposite.
I
CC (Opr.)
CPD
=
fIN x VCC
In determining the typical value of CPD, a rela-
tively high frequency of 1 MHz was applied to fIN,
in order to eliminate any error caused by the
quiescent supply current.
INPUT WAVEFORM IS THE SAME AS THAT IN CASE OF
SWITCHINGCHARACTERISTICSTEST.
6/11
M54/M74HC620/623
Plastic DIP20 (0.25) MECHANICAL DATA
mm
inch
DIM.
MIN.
0.254
1.39
TYP.
MAX.
MIN.
0.010
0.055
TYP.
MAX.
a1
B
b
1.65
0.065
0.45
0.25
0.018
0.010
b1
D
E
e
25.4
1.000
8.5
2.54
22.86
0.335
0.100
0.900
e3
F
7.1
0.280
0.155
I
3.93
L
3.3
0.130
Z
1.34
0.053
P001J
7/11
M54/M74HC620/623
Ceramic DIP20 MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
TYP.
MAX.
25
MIN.
MAX.
0.984
0.307
A
B
D
7.8
3.3
0.130
0.900
E
e3
F
0.5
1.78
0.020
0.070
22.86
2.29
0.4
2.79
0.55
1.52
0.31
1.27
0.090
0.016
0.050
0.009
0.020
0.110
0.022
0.060
0.012
0.050
G
I
1.27
0.22
0.51
L
M
N1
P
4° (min.), 15° (max.)
7.9
8.13
5.71
0.311
0.320
0.225
Q
P057H
8/11
M54/M74HC620/623
SO20 MECHANICAL DATA
mm
inch
DIM.
MIN.
TYP.
MAX.
2.65
0.20
2.45
0.49
0.32
MIN.
TYP.
MAX.
0.104
0.007
0.096
0.019
0.012
A
a1
a2
b
0.10
0.004
0.35
0.23
0.013
0.009
b1
C
0.50
0.020
c1
D
45° (typ.)
12.60
10.00
13.00
10.65
0.496
0.393
0.512
0.419
E
e
1.27
0.050
0.450
e3
F
11.43
7.40
0.50
7.60
1.27
0.75
0.291
0.19
0.299
0.050
0.029
L
M
S
8° (max.)
P013L
9/11
M54/M74HC620/623
PLCC20 MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
TYP.
MAX.
10.03
9.04
MIN.
0.385
0.350
0.165
MAX.
0.395
0.356
0.180
A
B
9.78
8.89
4.2
D
4.57
d1
d2
E
2.54
0.56
0.100
0.022
7.37
8.38
0.290
0.330
0.004
e
1.27
5.08
0.38
0.050
0.200
0.015
e3
F
G
0.101
M
M1
1.27
1.14
0.050
0.045
P027A
10/11
M54/M74HC620/623
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specificationsmentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronicsproductsare notauthorized foruse ascritical componentsin life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
11/11
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