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M74HC670M1 [STMICROELECTRONICS]

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M74HC670M1
型号： M74HC670M1
厂家： ST    ST
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存储 内存集成电路 静态存储器 光电二极管
文件： 总12页 (文件大小：266K)
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M54HC670  
M74HC670  
4 WORD X 4 BIT REGISTER FILE (3 STATE)  
.
.
.
.
.
.
.
.
HIGH SPEED  
tPD = 23 ns (TYP.) AT VCC = 5 V  
LOW POWER DISSIPATION  
ICC = 4 µA (MAX.) AT TA = 25 °C  
HIGH NOISE IMMUNITY  
VNIH = VNIL = 28 % VCC (MIN.)  
OUTPUT DRIVE CAPABILITY  
10 LSTTL LOADS  
SYMMETRICAL OUTPUT IMPEDANCE  
|IOH| = IOL = 4 mA (MIN.)  
BALANCED PROPAGATION DELAYS  
tPLH = tPHL  
WIDE OPERATING VOLTAGE RANGE  
B1R  
(Plastic Package)  
F1R  
(Ceramic Package)  
M1R  
(Micro Package)  
C1R  
(Chip Carrier)  
VCC (OPR) = 2 V TO 6 V  
PIN AND FUNCTION COMPATIBLE  
WITH 54/74LS670  
ORDER CODES :  
M54HC670F1R  
M74HC670B1R  
M74HC670M1R  
M74HC670C1R  
PIN CONNECTIONS (top view)  
DESCRIPTION  
The M54/74HC670 is a high speed CMOS 4 WORD  
X 4 BIT REGISTER FILE (3-STATE) fabricated in  
silicon gate C2MOS technology. It has the same  
high speed performance of LSTTL combined with  
true CMOS low power consumption. The  
M54HC/74HC670 is a 4 x 4 Register File organized  
as four words by four bits. Separate read and write  
inputs, both address and enable, allow simulta-  
neous read and write operation. The 3-state outputs  
make it possible to connect up to 128 outputs to in-  
crease theword capacity up to 512 words. Anynum-  
ber of these devices can be operated in parallel to  
generate an n-bitlength. Allinputs areequipped with  
protection circuits against static discharge and tran-  
sient excess voltage.  
NC =  
No Internal  
Connection  
October 1992  
1/12  
M54/M74HC670  
WRITE FUNCTION TABLE  
WRITE INPUTS  
READ FUNCTION TABLE  
READ INPUTS  
WORDS  
OUTPUTS  
Q1 Q2  
WB  
L
WA  
L
WE  
L
0
Q = D  
Q0  
1
2
Q0  
3
Q0  
RB  
L
RA  
L
RE  
L
Q0  
Q3  
Q0  
Q = D  
Q0  
W0B1 W0B2 W0B3 W0B4  
W1B1 W1B2 W1B3 W1B4  
W2B1 W2B2 W2B3 W2B4  
W3B1 W3B2 W3B3 W3B4  
L
H
L
Q0  
Q0  
L
H
L
L
H
L
L
Q0  
Q = D  
Q0  
Q0  
H
H
X
L
H
H
L
Q0  
Q0  
Q = D  
Q0  
H
X
L
X
X
H
Q0  
Q0  
Q0  
H
Z
Z
Z
Z
Notes: 1 *: DON’T CARE Z: HIGH IMPEDANCE  
2 (Q = D)= THE FOUR SELECT INTERNAL FLIP FLOP OUTPUTS WILL ASSUMETHE STATES APPLIED TO THE FOUR  
EXTERNALDATA INPUTS.  
3 Q0 = THE LEVEL OF Q BEFORETHE INDICATED INPUT CONDITIONS WERE ESTABLISHED.  
4 W0B1 = THE FIRST BIT OF WORD 0, ETC.  
LOGIC DIAGRAM  
2/12  
M54/M74HC670  
INPUT AND OUTPUT EQUIVALENT CIRCUIT  
PIN DESCRIPTION  
IEC LOGIC SYMBOL  
PIN No  
5, 4  
SYMBOL  
RA, RB  
Q1 to Q4  
RE  
NAME AND FUNCTION  
Read Address Inputs  
Data Outputs  
10, 9, 7, 6  
11  
3 State Output Read  
Enable Input (Active LOW)  
12  
WE  
Write Enable Input (Active  
LOW)  
14, 13  
WA, WB  
D1 to D4  
GND  
Write Address Inputs  
Data Inputs  
15, 1, 2, 3  
7
Ground (0V)  
14  
VCC  
Positive Supply Voltage  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VCC  
VI  
Parameter  
Value  
-0.5 to +7  
Unit  
Supply Voltage  
V
DC Input Voltage  
-0.5 to VCC + 0.5  
-0.5 to VCC + 0.5  
± 20  
V
V
VO  
DC Output Voltage  
IIK  
DC Input Diode Current  
DC Output Diode Current  
DC Output Source Sink Current Per Output Pin  
mA  
mA  
mA  
mA  
mW  
oC  
IOK  
± 20  
IO  
± 25  
ICC or IGND DC VCC or Ground Current  
± 50  
PD  
Tstg  
TL  
Power Dissipation  
500 (*)  
Storage Temperature  
Lead Temperature (10 sec)  
-65 to +150  
300  
oC  
Absolute MaximumRatingsare those values beyond whichdamage tothe device may occur. Functional operation under these condition isnotimplied.  
(*) 500 mW: 65 oC derate to 300 mW by 10mW/oC: 65 oC to 85 oC  
3/12  
M54/M74HC670  
RECOMMENDED OPERATING CONDITIONS  
Symbol  
VCC  
VI  
Parameter  
Value  
2 to 6  
Unit  
V
Supply Voltage  
Input Voltage  
Output Voltage  
0 to VCC  
0 to VCC  
V
VO  
V
Top  
Operating Temperature: M54HC Series  
M74HC Series  
-55 to +125  
-40 to +85  
oC  
oC  
tr, tf  
Input Rise and Fall Time  
VCC = 2 V  
VCC = 4.5 V  
VCC = 6 V  
0 to 1000  
0 to 500  
0 to 400  
ns  
DC SPECIFICATIONS  
Test Conditions  
VCC  
Value  
-40 to 85 oC -55 to 125 oC  
74HC 54HC  
TA = 25 oC  
54HC and 74HC  
Symbol  
Parameter  
Unit  
(V)  
Min. Typ. Max. Min. Max. Min. Max.  
VIH  
High Level Input  
Voltage  
2.0  
4.5  
6.0  
2.0  
4.5  
6.0  
2.0  
4.5  
6.0  
4.5  
6.0  
1.5  
3.15  
4.2  
1.5  
3.15  
4.2  
1.5  
3.15  
4.2  
V
V
VIL  
Low Level Input  
Voltage  
0.5  
1.35  
1.8  
0.5  
1.35  
1.8  
0.5  
1.35  
1.8  
VOH  
High Level  
Output Voltage  
1.9  
4.4  
5.9  
2.0  
4.5  
6.0  
1.9  
4.4  
1.9  
4.4  
VI =  
VIH  
or  
IO=-20 µA  
V
V
5.9  
5.9  
VIL  
IO=-4.0 mA 4.18 4.31  
4.13  
5.63  
4.10  
5.60  
IO=-5.2 mA 5.68  
5.8  
0.0  
0.0  
0.0  
VOL  
Low Level Output 2.0  
Voltage  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
VI =  
VIH  
or  
IO= 20 µA  
4.5  
6.0  
4.5  
6.0  
0.1  
0.1  
VIL  
IO= 4.0 mA  
IO= 5.2 mA  
0.17 0.26  
0.18 0.26  
±0.1  
0.33  
0.33  
±1  
0.40  
0.40  
±1  
II  
Input Leakage  
6.0  
VI = VCC or GND  
µA  
µA  
µA  
Current  
IOZ  
ICC  
3 State Output  
6.0  
VI = VIH or VIL  
VO = VCC or GND  
±0.5  
±5  
±5  
Off State Current  
Quiescent Supply 6.0 VI = VCC or GND  
Current  
4
40  
80  
4/12  
M54/M74HC670  
AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6 ns)  
Test Conditions  
Value  
-40 to 85 oC -55 to 125 oC  
74HC 54HC  
TA = 25 oC  
54HC and 74HC  
Symbol  
Parameter  
Unit  
VCC  
(V)  
Min. Typ. Max. Min. Max. Min. Max.  
tTLH  
tTHL  
Output Transition  
Time  
2.0  
4.5  
6.0  
2.0  
4.5  
6.0  
2.0  
4.5  
6.0  
2.0  
4.5  
6.0  
2.0  
4.5  
6.0  
2.0  
4.5  
6.0  
2.0  
4.5  
6.0  
2.0  
4.5  
6.0  
2.0  
4.5  
6.0  
2.0  
4.5  
6.0  
2.0  
4.5  
6.0  
30  
8
75  
15  
13  
185  
37  
31  
220  
44  
37  
185  
37  
31  
110  
22  
19  
95  
19  
16  
75  
15  
13  
50  
10  
9
95  
19  
16  
230  
46  
39  
275  
55  
47  
230  
46  
39  
140  
28  
24  
120  
24  
20  
95  
19  
16  
65  
13  
11  
0
110  
22  
19  
280  
56  
48  
330  
66  
56  
280  
56  
48  
165  
33  
28  
145  
29  
25  
110  
22  
19  
75  
15  
13  
0
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
7
tPLH  
tPHL  
Propagation  
Delay Time  
(RA, RB - Qn)  
96  
24  
20  
108  
27  
23  
104  
26  
22  
42  
13  
11  
25  
13  
11  
16  
4
tPLH  
tPHL  
Propagation  
Delay Time  
(WE - Qn)  
tPLH  
tPHL  
Propagation  
Delay Time  
(Dn - Qn)  
tPZL  
tPZH  
Output Disable  
Time  
RL = 1 KΩ  
RL = 1 KΩ  
tPLZ  
tPHZ  
Output Disable  
Time  
tW(L)  
Minimum Pulse  
Width  
(WE)  
3
ts  
Minimum Set-up  
Time (Dn - WE)  
(WA, WB - WE)  
12  
3
3
th  
Minimum Hold  
Time  
(Dn - WE)  
0
0
0
0
0
0
0
th  
Minimum Hold  
Time  
(WA, WB - WE)  
5
5
5
5
5
5
5
5
5
tlatch  
Minimum Latch  
Time  
(WE - RA, RB)  
5
5
5
5
5
5
5
5
5
CIN  
Input Capacitance  
5
10  
10  
10  
pF  
pF  
CPD (*) Power Dissipation  
Capacitance  
96  
(*) CPD isdefined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without load.  
(Refer to Test Circuit). Average operting current can be obtained by the followingequation. ICC(opr) = CPD • VCC • fIN + ICC  
5/12  
M54/M74HC670  
SWITCHING CHARACTERISTICS TEST WAVEFORM  
6/12  
M54/M74HC670  
SWITCHING CHARACTERISTICS TEST WAVEFORM (continued)  
GND  
VCC  
SUCH A LOGIC LEVEL, SHALL BE APPLIED TO EACH INPUT THAT THE OUTPUT VOLTAGE STAYS IN THE AP-  
POSITE SIDE TO THE SWITCH CONNECTION LEVEL. WHEN THE OUTPUT IS ENABLED.  
TEST CIRCUIT ICC (Opr.)  
INPUTWAVEFORM IS THE SAME AS THAT IN CASE OF SWITCHING CHARACTERISTICS TEST.  
7/12  
M54/M74HC670  
Plastic DIP16 (0.25) MECHANICAL DATA  
mm  
inch  
TYP.  
DIM.  
MIN.  
0.51  
0.77  
TYP.  
MAX.  
MIN.  
0.020  
0.030  
MAX.  
a1  
B
b
1.65  
0.065  
0.5  
0.020  
0.010  
b1  
D
E
e
0.25  
20  
0.787  
8.5  
2.54  
17.78  
0.335  
0.100  
0.700  
e3  
F
7.1  
5.1  
0.280  
0.201  
I
L
3.3  
0.130  
Z
1.27  
0.050  
P001C  
8/12  
M54/M74HC670  
Ceramic DIP16/1 MECHANICAL DATA  
mm  
inch  
TYP.  
DIM.  
MIN.  
TYP.  
MAX.  
20  
MIN.  
MAX.  
0.787  
0.276  
A
B
7
D
E
3.3  
0.130  
0.700  
0.38  
0.015  
e3  
F
17.78  
2.29  
0.4  
2.79  
0.55  
1.52  
0.31  
1.27  
10.3  
8.05  
5.08  
0.090  
0.016  
0.046  
0.009  
0.020  
0.110  
0.022  
0.060  
0.012  
0.050  
0.406  
0.317  
0.200  
G
H
L
1.17  
0.22  
0.51  
M
N
P
7.8  
0.307  
Q
P053D  
9/12  
M54/M74HC670  
SO16 (Narrow) MECHANICAL DATA  
mm  
inch  
TYP.  
DIM.  
MIN.  
TYP.  
MAX.  
1.75  
0.2  
MIN.  
MAX.  
0.068  
0.007  
0.064  
0.018  
0.010  
A
a1  
a2  
b
0.1  
0.004  
1.65  
0.46  
0.25  
0.35  
0.19  
0.013  
0.007  
b1  
C
0.5  
0.019  
c1  
D
45° (typ.)  
9.8  
5.8  
10  
0.385  
0.228  
0.393  
0.244  
E
6.2  
e
1.27  
8.89  
0.050  
0.350  
e3  
F
3.8  
4.6  
0.5  
4.0  
5.3  
0.149  
0.181  
0.019  
0.157  
0.208  
0.050  
0.024  
G
L
1.27  
0.62  
M
S
8° (max.)  
P013H  
10/12  
M54/M74HC670  
PLCC20 MECHANICAL DATA  
mm  
inch  
TYP.  
DIM.  
MIN.  
9.78  
8.89  
4.2  
TYP.  
MAX.  
10.03  
9.04  
MIN.  
0.385  
0.350  
0.165  
MAX.  
0.395  
0.356  
0.180  
A
B
D
4.57  
d1  
d2  
E
2.54  
0.56  
0.100  
0.022  
7.37  
8.38  
0.290  
0.330  
0.004  
e
1.27  
5.08  
0.38  
0.050  
0.200  
0.015  
e3  
F
G
0.101  
M
M1  
1.27  
1.14  
0.050  
0.045  
P027A  
11/12  
M54/M74HC670  
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the  
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No  
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specificationsmentioned  
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.  
SGS-THOMSON Microelectronicsproductsare notauthorized foruse ascritical componentsin life support devices or systems without express  
written approval of SGS-THOMSON Microelectonics.  
1994 SGS-THOMSON Microelectronics - All Rights Reserved  
SGS-THOMSON Microelectronics GROUP OF COMPANIES  
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -  
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A  
12/12  

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