M74HCT368 [STMICROELECTRONICS]
HEX BUS BUFFER 3-STATE HCT367 NONINVERTING, HCT368 INVERTING; HEX BUS BUFFER 3 -STATE HCT367同相，反相HCT368
| 型号： | M74HCT368 |
| 厂家： | 
ST |
| 描述： | HEX BUS BUFFER 3-STATE HCT367 NONINVERTING, HCT368 INVERTING |
| 文件： | 总11页 (文件大小：250K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
M54/M74HCT367
M54/M74HCT368
HEX BUS BUFFER (3-STATE)
HCT367 NON INVERTING, HCT368 INVERTING
.
.
.
.
.
.
.
HIGH SPEED
tPD = 11 ns (TYP.) AT VCC = 5 V
LOW POWER DISSIPATION
ICC = 4 µA (MAX.) AT TA = 25 °C
COMPATIBLE WITH TTL OUTPUTS
VIH = 2V (MIN.) VIL = 0.8V (MAX)
OUTPUT DRIVE CAPABILITY
15 LSTTL LOADS
SYMMETRICAL OUTPUT IMPEDANCE
|IOH| = IOL = 6 mA (MIN.)
BALANCED PROPAGATION DELAYS
tPLH = tPHL
PIN AND FUNCTION COMPATIBLE WITH
B1R
(Plastic Package)
F1R
(Ceramic Package)
M1R
(Micro Package)
C1R
(Chip Carrier)
54/74LS367/368
ORDER CODES :
M54HCTXXXF1R
M74HCTXXXM1R
M74HCTXXXB1R
M74HCTXXXC1R
DESCRIPTION
The M54/74HCT367 and the M54/74HCT368 are
high speed CMOS HEX BUS BUFFER (3-STATE)
fabricated in silicon gate C2MOS technology. They
have the same high speed performance of LSTTL
combined with true CMOS low power consumption.
These devices contain six buffers, four buffers are
controlled by an enable input (G1) and the other two
buffers are controlled by the other enable input
(G2) ; the outputs of each buffer group are enabled
when G1 and/or G2 inputs are held low, and
when held high these outputs are disabled to be
high-impedance.
PIN CONNECTIONS (top view)
HCT368
Theseoutputs are capable of driving upto15LSTTL
loads. The designer has a choice of non-inverting
outputs (HCT367) and inverting outputs (HCT368).
All inputs are equipped with protection circuits
against static discharge and transient excess volt-
age.
HCT367
This integrated circuit has input and output charac-
teristics that are fully compatible with 54/74 LSTTL
logic families. M54/74HCT devices are designed to
directly interface HSC2MOS systems with TTL and
NMOS components. They are also plug in replace-
ments for LSTTL devices giving a reduction of
power consumption.
All inputs are equipped with protection circuits
against static discharge and transient excess volt-
age.
February 1993
1/11
M54/M74HCT367/368
INPUT AND OUTPUT EQUIVALENT CIRCUIT
CHIP CARRIER
HCT367
HCT368
NC = No Internal Connection
TRUTH TABLE
INPUTS
OUTPUTS
G
L
An
L
Y n (367)
Yn (368)
L
H
Z
H
L
L
H
H
X
Z
X = DON’T CARE Z = HIGH IMPEDANCE
PIN DESCRIPTION (HCT367)
PIN DESCRIPTION (HCT368)
PIN No
SYMBOL
G1, G2
NAME AND FUNCTION
Output Enable Inputs
Data Inputs
PIN No
SYMBOL
G1, G2
NAME AND FUNCTION
Output Enable Inputs
Data Inputs
1, 15
1, 15
2, 4, 6, 10,
12, 14
1A to 6A
2, 4, 6, 10,
12, 14
1A to 6A
3, 5, 7, 9,
11, 13
1Y to 6Y
Data Outputs
3, 5, 7, 9,
11, 13
1Y to 6Y
Data Outputs
8
GND
VCC
Ground (0V)
8
GND
VCC
Ground (0V)
16
Positive Supply Voltage
16
Positive Supply Voltage
2/11
M54/M74HCT367/368
IEC LOGIC SYMBOL
HCT367
HCT368
ABSOLUTE MAXIMUM RATINGS
Symbol
VCC
VI
Parameter
Value
Unit
V
Supply Voltage
-0.5 to +7
-0.5 to VCC + 0.5
-0.5 to VCC + 0.5
± 20
DC Input Voltage
V
VO
DC Output Voltage
V
IIK
DC Input Diode Current
DC Output Diode Current
DC Output Source Sink Current Per Output Pin
mA
mA
mA
mA
mW
oC
IOK
± 20
IO
± 35
ICC or IGND DC VCC or Ground Current
± 70
PD
Tstg
TL
Power Dissipation
500 (*)
Storage Temperature
Lead Temperature (10 sec)
-65 to +150
300
oC
Absolute MaximumRatingsare those values beyond whichdamage tothe device may occur. Functional operation under these condition isnotimplied.
(*) 500 mW: 65 oC derate to 300 mW by 10mW/oC: 65 oC to 85 oC
RECOMMENDED OPERATING CONDITIONS
Symbol
VCC
VI
Parameter
Value
4.5 to 5.5
0 to VCC
0 to VCC
Unit
V
Supply Voltage
Input Voltage
Output Voltage
V
VO
V
Top
Operating Temperature: M54HC Series
M74HC Series
-55 to +125
-40 to +85
oC
oC
tr, tf
Input Rise and Fall Time (VCC = 4.5 to 5.5V)
0 to 500
ns
RECOMMENDED OPERATING CONDITIONS
3/11
M54/M74HCT367/368
DC SPECIFICATIONS
Test Conditions
VCC
Value
TA = 25 oC
54HC and 74HC
-40 to 85 oC -55 to 125 oC
Symbol
VIH
Parameter
Unit
V
74HC
54HC
(V)
Min. Typ. Max. Min. Max. Min. Max.
High Level Input
Voltage
4.5
to
2.0
2.0
2.0
5.5
VIL
Low Level Input
Voltage
4.5
to
0.8
0.8
0.8
V
5.5
VOH
High Level
VI = IO=-20 µA
4.4
4.5
4.4
4.4
Output Voltage
VIH
or
VIL
4.5
V
V
IO=-6.0 mA 4.18 4.31
4.13
4.10
VOL
Low Level Output
Voltage
VI = IO= 20 µA
VIH
or
VIL
0.0
0.1
0.1
0.33
±1
0.1
0.4
±1
4.5
5.5
IO= 6.0 mA
0.17 0.26
II
Input Leakage
Current
VI = VCC or GND
±0.1
4
µA
µA
ICC
Quiescent Supply 5.5 VI = VCC or GND
Current
40
80
∆ICC
Additional worst
case supply
current
5.5
Per Input pin
VI = 0.5V or
VI = 2.4V
2.0
2.9
3.0
mA
Other Inputs at
VCC or GND
IO= 0
4/11
M54/M74HCT367/368
AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6 ns)
Test Conditions
Value
-40 to 85 oC -55 to 125 oC
74HC 54HC
TA = 25 oC
54HC and 74HC
Symbol
Parameter
Unit
ns
VCC CL
(V) (pF)
Min. Typ. Max. Min. Max. Min. Max.
tTLH
tTHL
tPLH
tPHL
Output Transition
Time
2.0
2.0
50
50
7
12
15
18
Propagation
Delay Time
(for HCT367 only)
14
18
15
19
22
28
24
30
28
35
30
38
33
42
36
45
ns
2.0 150
2.0 50
2.0 150
2.0 50
2.0 150
2.0 50
tPLH
tPHL
Propagation
Delay Time
(for HCT368 only)
ns
tPZL
tPZH
Output Enable
Time
16
20
18
25
31
25
31
39
31
38
47
38
ns
ns
tPLZ
tPHZ
Output Disable
Time
CIN
Input Capacitance
5
10
10
10
pF
pF
CPD (*) Power Dissipation
Capacitance
fot HCT367
for HCT368
47
55
(*) CPD isdefined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without load.
(Refer to Test Circuit). Average operting current can be obtained by the followingequation. ICC(opr) = CPD • VCC • fIN + ICC/6 (per Channel)
TEST CIRCUIT ICC (Opr.)
CPD CALCULATION
CPD is to be calculated with the following
formula by using the measured value of
ICC (opr.) in the test circuit opposite.
I
CC (opr)
CPD
=
fIN × VCC
In determining the typical value of CPD, a
relatively highfrequency of 1 MHz wasap-
plied to fIN, in order to eliminate any error
caused by the quiescent supply current.
* INPUT WAVEFORM IS THE SAME AS THAT IN CASE OF
SWITCHINGCHARACTERISTICSTEST.
5/11
M54/M74HCT367/368
SWITCHING CHARACTERISTICS TEST WAVEFORM
GND
VCC
Note : Such a logic level shall be applied to each input that the output voltage stays in the apposite side to the switch connection level, when
the output is enabled.
6/11
M54/M74HCT367/368
Plastic DIP16 (0.25) MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
0.51
0.77
TYP.
MAX.
MIN.
0.020
0.030
MAX.
a1
B
b
1.65
0.065
0.5
0.020
0.010
b1
D
E
e
0.25
20
0.787
8.5
2.54
17.78
0.335
0.100
0.700
e3
F
7.1
5.1
0.280
0.201
I
L
3.3
0.130
Z
1.27
0.050
P001C
7/11
M54/M74HCT367/368
Ceramic DIP16/1 MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
TYP.
MAX.
20
MIN.
MAX.
0.787
0.276
A
B
D
7
3.3
0.130
0.700
E
e3
F
0.38
0.015
17.78
2.29
0.4
2.79
0.55
1.52
0.31
1.27
10.3
8.05
5.08
0.090
0.016
0.046
0.009
0.020
0.110
0.022
0.060
0.012
0.050
0.406
0.317
0.200
G
H
L
1.17
0.22
0.51
M
N
P
7.8
0.307
Q
P053D
8/11
M54/M74HCT367/368
SO16 (Narrow) MECHANICAL DATA
mm
inch
DIM.
MIN.
TYP.
MAX.
1.75
0.2
MIN.
TYP.
MAX.
0.068
0.007
0.064
0.018
0.010
A
a1
a2
b
0.1
0.004
1.65
0.46
0.25
0.35
0.19
0.013
0.007
b1
C
0.5
0.019
c1
D
45° (typ.)
9.8
5.8
10
0.385
0.228
0.393
0.244
E
6.2
e
1.27
8.89
0.050
0.350
e3
F
3.8
4.6
0.5
4.0
5.3
0.149
0.181
0.019
0.157
0.208
0.050
0.024
G
L
1.27
0.62
M
S
8° (max.)
P013H
9/11
M54/M74HCT367/368
PLCC20 MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
TYP.
MAX.
10.03
9.04
MIN.
0.385
0.350
0.165
MAX.
0.395
0.356
0.180
A
B
9.78
8.89
4.2
D
4.57
d1
d2
E
2.54
0.56
0.100
0.022
7.37
8.38
0.290
0.330
0.004
e
1.27
5.08
0.38
0.050
0.200
0.015
e3
F
G
0.101
M
M1
1.27
1.14
0.050
0.045
P027A
10/11
M54/M74HCT367/368
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specificationsmentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronicsproductsare notauthorized foruse ascritical componentsin life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
11/11
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