M74HCT640C1R [STMICROELECTRONICS]
OCTAL BUS TRANSCEIVER3-STATE: HCT245 NON INVERTING HCT640 INVERTING, HCT643 INVERTING/NON INVERTING; 八路总线TRANSCEIVER3态： HCT245同相HCT640反转， HCT643反相/非反相
| 型号： | M74HCT640C1R |
| 厂家： | 
ST |
| 描述： | OCTAL BUS TRANSCEIVER3-STATE: HCT245 NON INVERTING HCT640 INVERTING, HCT643 INVERTING/NON INVERTING |
| 文件： | 总11页 (文件大小：267K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
M54/74HCT245/640/643
M54/74HCT245/640/643
OCTAL BUS TRANSCEIVER (3-STATE): HCT245 NON INVERTING
HCT640 INVERTING, HCT643 INVERTING/NON INVERTING
.
HIGH SPEED
PD = 10 ns (TYP.) at VCC = 5V
t
.
.
.
.
.
.
LOW POWER DISSIPATION
ICC = 4 µA (MAX.) at TA = 25 oC
COMPATIBLE WITH TTL OUTPUTS
B1R
(Plastic Package)
F1R
V
IH = 2V (MIN.) VIL = 0.8V (MAX.)
(Ceramic Package)
OUTPUT DRIVE CAPABILITY
15 LSTTL LOADS
SYMMETRICAL OUTPUT IMPEDANCE
|IOH| = IOL = 6 mA (MIN)
BALANCED PROPAGATION DELAYS
tPLH = tPHL
PIN AND FUNCTION COMPATIBLE
WITH 54/74LS245/640/643
M1R
C1R
(Micro Package)
(Chip Carrier)
ORDER CODES :
M54HCTXXXF1R
M74HCTXXXM1R
M74HCTXXXB1R
M74HCTXXXC1R
DESCRIPTION
The M54/74HCT245, HCT640 and HCT643 utilise
silicon gate C2MOS technology to achive operating
speeds eqivalent to LSTTL devices.
characteristics that are fully compatible with 54/74
LSTTL logic families. M54/74HCT devices are
designed to directly interface HSC2MOS systems
with TTL and NMOS components. They are also
plug in replacements for LSTTL devices giving a
reduction of power consumption.
IT IS PROHIBITED TO APPLY A SIGNAL TO A
BUS TERMINAL WHEN IT IS IN OUTPUT MODE
AND WHEN A BUS THERMINAL IS FLOATING
(HIGH IMPEDANCE STATE), IT IS REQUESTED
TO FIX THE INPUT LEVEL BY MEANS OF
EXTERNAL PULL DOWN OR PULL UP
RESISTOR.
Along with the low power dissipation and high noise
immunity of standad CMOS integrated circuit, it
possesses the capability to drive 15 LSTTL loads.
These IC’s are intended for two-way asynchronous
communication between data buses, and the
direction of data trasmission is determined by DIR
input. The enable input (G) can be used to disable
the device so that the buses are effectively isolated.
All input are equipped with protection circuits
against static discharge and transient discharge.
These integrated circuits have input and output
PIN CONNECTION (top view)
HCT245
HCT640
HCT643
October 1993
1/11
M54/M74HCT245/640/643
INPUT AND OUTPUT EQUIVALENT CIRCUIT
PIN DESCRIPTION
PIN No
SYMBOL
DIR
NAME AND FUNCTION
Directional Control
1
2, 3, 4, 5,
6, 7, 8, 9
A1 to A8
Data Inputs/Outputs
18, 17, 16,
15, 14, 13,
12, 11
B1 to B8
G
Data Inputs/Outputs
19
Output Enabel Input
(Active LOW)
10
20
GND
VCC
Ground (0V)
Positive Supply Voltage
IEC LOGIC SYMBOLS
HCT245
HCT640
HCT643
TRUTH TABLE
INPUT
FUNCTION
A BUS
OUTPUT
HCT640
G
L
DIR
L
B BUS
INPUT
OUTPUT
Z
HCT245
HCT643
A = B
B = A
Z
OUTPUT
INPUT
Z
A = B
B = A
Z
A = B
B = A
Z
L
H
H
X
X: ”H” or ”L”
Z: High impedance
2/11
M54/M74HCT245/640/643
LOGIC DIAGRAM (HCT640)
NOTE: IN CASE OF HCT245 OR HCT643, INPUT INVERTERS MARKED* AT A BUS AND B BUS ARE ELIMINATED RESPECTIVELY
ABSOLUTE MAXIMUM RATINGS
Symbol
VCC
VI
Parameter
Value
-0.5 to +7
-0.5 to VCC + 0.5
-0.5 to VCC + 0.5
± 20
Unit
V
Supply Voltage
DC Input Voltage
DC Output Voltage
V
VO
V
IIK
DC Input Diode Current
mA
mA
mA
mA
mW
oC
IOK
DC Output Diode Current
± 20
IO
DC Output Source Sink Current Per Output Pin
± 35
ICC or IGND DC VCC or Ground Current
± 70
PD
Tstg
TL
Power Dissipation
500 (*)
Storage Temperature
Lead Temperature (10 sec)
-65 to +150
300
oC
Absolute MaximumRatingsare those values beyond whichdamage tothe device may occur. Functional operation under these condition isnotimplied.
(*) 500 mW: 65 oC derate to 300 mW by 10mW/oC: 65 oC to 85 oC
3/11
M54/M74HCT245/640/643
RECOMMENDED OPERATING CONDITIONS
Symbol
VCC
VI
Parameter
Value
4.5 to 5.5
0 to VCC
0 to VCC
Unit
V
Supply Voltage
Input Voltage
Output Voltage
V
VO
V
Top
Operating Temperature: M54HC Series
M74HC Series
-55 to +125
-40 to +85
oC
oC
tr, tf
Input Rise and Fall Time (VCC = 4.5 to 5.5V)
0 to 500
ns
DC SPECIFICATIONS
Test Conditions
VCC
Value
-40 to 85 oC -55 to 125 oC
74HC 54HC
TA = 25 oC
54HC and 74HC
Symbol
VIH
Parameter
Unit
V
(V)
Min. Typ. Max. Min. Max. Min. Max.
High Level Input
Voltage
4.5
to
2.0
2.0
2.0
5.5
VIL
Low Level Input
Voltage
4.5
to
0.8
0.8
0.8
V
5.5
VOH
High Level
VI = IO=-20 µA
4.4
4.5
4.4
4.4
Output Voltage
VIH
or
VIL
4.5
V
V
IO=-6.0 mA 4.18 4.31
4.13
4.10
VOL
Low Level Output
Voltage
VI = IO= 20 µA
VIH
or
VIL
0.0
0.1
0.1
0.33
±1
0.1
0.4
±1
4.5
5.5
IO= 6.0 mA
0.17 0.26
II
Input Leakage
Current
VI = VCC or GND
±0.1
±0.5
4
µA
µA
µA
mA
IOZ
3 State Output
Off State Current
5.5 VI = VCC or GND
±5.0
40
±10
80
ICC
∆ICC
Quiescent Supply 5.5 VI = VCC or GND
Current
Additional worst
case supply
current
5.5
Per Input pin
VI = 0.5V or
VI = 2.4V
2.0
2.9
3.0
Other Inputs at
VCC or GND
IO= 0
4/11
M54/M74HCT245/640/643
AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6 ns)
Test Conditions
Value
-40 to 85 oC -55 to 125 oC
74HC 54HC
TA = 25 oC
54HC and 74HC
Symbol
Parameter
Unit
VCC CL
(V) (pF)
Min. Typ. Max. Min. Max. Min. Max.
tTLH
tTHL
tPLH
tPHL
Output Transition
Time
4.5
50
7
12
15
18
ns
Propagation
Delay Time
4.5
50
13
18
19
24
17
22
30
30
38
30
28
38
38
48
38
33
45
45
57
45
ns
ns
ns
ns
4.5 150
tPZL
tPZH
Output Enable
Time
4.5
50 RL = 1KΩ
4.5 150 RL = 1KΩ
tPLZ
tPHZ
Output Disable
Time
4.5
50 RL = 1KΩ
ns
pF
pF
CIN
Input Capacitance
DIR, G
An, Bn
5
10
10
10
CI/OUT
Output
Capacitance
13
CPD (*) Power Dissipation
Capacitance
HCT245
HCT640/643
41
39
pF
(*) CPD isdefined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without load.
(Refer to Test Circuit). Average operting current can be obtained by the followingequation. ICC(opr) = CPD • VCC • fIN + ICC/8 (per circuit)
SWITCHING CHARACTERISTICS TEST WAVEFORM
5/11
M54/M74HCT245/640/643
TEST CIRCUIT ICC (Opr.)
CPD CALCULATION
CPD is to be calculated with the following
formula by using the measured value of ICC
(Opr.) in the test circuit opposite.
I
CC (Opr.)
CPD
=
f IN x VCC
In determining the value of CPD, a relatively
high frequency of 1 MHz was applied to fIN, in
orther to eliminate any error caused by the
quiescent supply current.
6/11
M54/M74HCT245/640/643
Plastic DIP20 (0.25) MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
0.254
1.39
TYP.
MAX.
MIN.
0.010
0.055
MAX.
a1
B
b
1.65
0.065
0.45
0.25
0.018
0.010
b1
D
E
e
25.4
1.000
8.5
2.54
22.86
0.335
0.100
0.900
e3
F
7.1
0.280
0.155
I
3.93
L
3.3
0.130
Z
1.34
0.053
P001J
7/11
M54/M74HCT245/640/643
Ceramic DIP20 MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
TYP.
MAX.
25
MIN.
MAX.
0.984
0.307
A
B
7.8
D
E
3.3
0.130
0.900
0.5
1.78
0.020
0.070
e3
F
22.86
2.29
0.4
2.79
0.55
1.52
0.31
1.27
0.090
0.016
0.050
0.009
0.020
0.110
0.022
0.060
0.012
0.050
G
I
1.27
0.22
0.51
L
M
N1
P
4° (min.), 15° (max.)
7.9
8.13
5.71
0.311
0.320
0.225
Q
P057H
8/11
M54/M74HCT245/640/643
SO20 MECHANICAL DATA
mm
inch
DIM.
MIN.
TYP.
MAX.
2.65
0.20
2.45
0.49
0.32
MIN.
TYP.
MAX.
0.104
0.007
0.096
0.019
0.012
A
a1
a2
b
0.10
0.004
0.35
0.23
0.013
0.009
b1
C
0.50
0.020
c1
D
45° (typ.)
12.60
10.00
13.00
10.65
0.496
0.393
0.512
0.419
E
e
1.27
0.050
0.450
e3
F
11.43
7.40
0.50
7.60
1.27
0.75
0.291
0.19
0.299
0.050
0.029
L
M
S
8° (max.)
P013L
9/11
M54/M74HCT245/640/643
PLCC20 MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
TYP.
MAX.
10.03
9.04
MIN.
0.385
0.350
0.165
MAX.
0.395
0.356
0.180
A
B
9.78
8.89
4.2
D
4.57
d1
d2
E
2.54
0.56
0.100
0.022
7.37
8.38
0.290
0.330
0.004
e
1.27
5.08
0.38
0.050
0.200
0.015
e3
F
G
0.101
M
M1
1.27
1.14
0.050
0.045
P027A
10/11
M54/M74HCT245/640/643
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specificationsmentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronicsproductsare notauthorized foruse ascritical componentsin life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
11/11
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