MJD117 [STMICROELECTRONICS]
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS; 互补硅功率达林顿晶体管
| 型号： | MJD117 |
| 厂家： | 
ST |
| 描述： | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS |
| 文件： | 总6页 (文件大小：87K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MJD112
MJD117
COMPLEMENTARY SILICON POWER
DARLINGTON TRANSISTORS
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SGS-THOMSON PREFERRED SALESTYPES
LOW BASE-DRIVE REQUIREMENTS
INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
SURFACE-MOUNTING TO-252 (DPAK)
POWER PACKAGE IN TAPE & REEL
(SUFFIX ”T4”)
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3
ELECTRICAL SIMILAR TO TIP112 AND
TIP117
1
APPLICATIONS
■
GENERAL PURPOSE SWITCHING AND
AMPLIFIER
DPAK
TO-252
(Suffix ”T4”)
DESCRIPTION
The MJD112 and MJD117 form complementary
PNP - NPN pairs.
They are manufactured using Epitaxial Base
technology for cost-effective performance.
INTERNAL SCHEMATIC DIAGRAM
R1(typ) = 7KΩ
R2(typ) = 200Ω
ABSOLUTE MAXIMUM RATINGS
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Collector-Emitter Voltage (IE = 0)
Collector-Emitter Voltage (IB = 0)
Emitter-Base Voltage (IC = 0)
Collector Current
Value
Unit
100
V
V
100
5
V
2
4
A
ICM
Collector Peak Current (tp < 5 ms)
Base Current
A
IB
0.05
20
A
o
Ptot
Tstg
Tj
Total Dissipation at Tc = 25 C
W
oC
oC
Storage Temperature
-65 to 150
150
Max. Operating Junction Temperature
For PNP type voltage and currentvalues are negative.
1/6
September1997
MJD112/MJD117
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Rthj-amb Thermal Resistance Junction-ambient
Max
Max
6.25
100
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
VCB = 100 V
Min.
Typ.
Max.
Unit
ICBO
Collector Cut-off
Current (IE = 0)
0.02
0.01
mA
mA
VCB = 80 V
ICEO
ICEX
IEBO
Collector Cut-off
Current (IB = 0)
VCE = 50 V
0.02
mA
Collector Cut-off
Current
VCB = 80 V VBE = -1.5V
VCB = 80 V VBE = -1.5V Tc = 125 C
0.01
0.5
mA
mA
o
Emitter Cut-off Current VEB = 5 V
(IC = 0)
2
mA
VCEO(sus) Collector-Emitter
Sustaining Voltage
IC = 30 mA
100
V
VCE(sat)
Collector-Emitter
Saturation Voltage
IC = 2 A
IC = 4 A
IB = 8 mA
IB = 40 mA
2
3
V
V
VBE(sat)
Collector-Base
IC = 4 A
IB = 40 mA
4
V
Saturation Voltage
VBE(on)
hFE
Base-Emitter Voltage
DC Current Gain
IC = 2 A
VCE = 3 V
2.8
V
IC = 0.5 A
IC = 2 A
IC = 4 A
VCE = 3 V
VCE = 3 V
VCE = 3 V
500
1000
200
12000
Pulsed:Pulse duration = 300 µs, duty cycle ≤ 2 %
Safe Operating Areas
Derating Curve
2/6
MJD112/MJD117
DC Current Gain (NPN type)
DC Current Gain (NPN type)
Collector-Emitter Saturation Voltage (NPN type)
Collector-Emitter Saturation Voltage (PNP type)
Base-Emitter Saturation Voltage (NPN type)
Base-Emitter Saturation Voltage (PNP type)
3/6
MJD112/MJD117
Base-Emitter On Voltage (NPN type)
Base-Emitter On Voltage (PNP type)
Freewheel Diode Forward Voltage (NPN types)
Freewheel Diode Forward Voltage (PNP types)
4/6
MJD112/MJD117
TO-252 (DPAK) MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
2.2
TYP.
MAX.
2.4
MIN.
0.086
0.035
0.001
0.025
0.204
0.017
0.019
0.236
0.252
0.173
0.368
MAX.
0.094
0.043
0.009
0.035
0.212
0.023
0.023
0.244
0.260
0.181
0.397
A
A1
A2
B
0.9
1.1
0.03
0.64
5.2
0.23
0.9
B2
C
5.4
0.45
0.48
6
0.6
C2
D
0.6
6.2
E
6.4
6.6
G
4.4
4.6
H
9.35
10.1
L2
L4
0.8
0.031
0.6
1
0.023
0.039
H
DETAIL ”A”
D
L2
DETAIL ”A”
L4
0068772-B
5/6
MJD112/MJD117
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequencesof use of such informationnor for any infringementof patents or other rightsof third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in thispublication are subject to change without notice. This publication supersedes and replacesall informationpreviously supplied.
SGS-THOMSON Microelectronicsproducts arenot authorized for useas critical componentsin life support devices or systems withoutexpress
written approval of SGS-THOMSON Microelectonics.
1997 SGS-THOMSONMicroelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON MicroelectronicsGROUP OF COMPANIES
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. . .
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