MJE210_03 [STMICROELECTRONICS]
SILICON PNP TRANSISTOR; 硅PNP晶体管
| 型号： | MJE210_03 |
| 厂家： | 
ST |
| 描述： | SILICON PNP TRANSISTOR |
| 文件： | 总4页 (文件大小：47K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MJE210
®
SILICON PNP TRANSISTOR
■
■
STMicroelectronics PREFERRED
SALESTYPE
PNP TRANSISTOR
DESCRIPTION
The MJE210 is a silicon Epitaxial-Base PNP
transistor in Jedec SOT-32 plastic package,
designed for low voltage, low power, high gain
audio amplifier applications.
1
2
3
SOT-32
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
VCBO
VCEO
VEBO
IC
Collector-Base Voltage (IE = 0)
Collector-Emitter Voltage (IB = 0)
Base-Emitter Voltage (IC = 0)
Collector Current
-40
-25
-8
V
V
V
A
A
A
-5
ICM
Collector Peak Current (tp < 5 ms)
Base Current
-10
-1
IB
o
15
1.5
Total Power Dissipation at Tcase ≤ 25 C
Ptot
W
o
at Tamb ≤ 25 C
Tstg
Tj
Storage Temperature
-65 to 150
150
oC
oC
Max Operating Junction Temperature
1/4
September 2003
MJE210
THERMAL DATA
Rthj-amb Thermal Resistance Junction-ambient
Rthj-case Thermal Resistance Junction-case
Max
Max
83.4
8.34
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Collector Cut-off
Current (IE = 0)
VCB = -40 V
VCB = -40 V
-100
-100
nA
µA
ICBO
Tcase = 125oC
Emitter Cut-off Current VEB = -8 V
(IC = 0)
IEBO
-100
nA
Collector-Emitter
Sustaining Voltage
(IB = 0)
IC = -10 mA
VCEO(sus)
-25
V
Collector-Emitter
Sustaining Voltage
IC = -0.5 A
IC = -2 A
IC = -5 A
IB = -50 mA
IB = -0.2 A
IB = -1 A
-0.3
-0.75
-1.8
V
V
V
VCE(sat)
Base-Emitter on
Voltage
IC = -5 A
IB = -1 A
V
VBE(sat)
VBE
-2.5
-1.6
Base-Emitter on
Voltage
IC =- 2 A
VCE = -1 V
V
DC Current Gain
IC = -0.5 A
IC = -2 A
IC = -5 A
VCE = -1 V
VCE = -1 V
VCE = -2 V
70
45
10
hFE
180
120
Transistor Frequency
IC = 0.1 A
f = 10 MHz
VCE = 10 V
fT
65
MHz
pF
Collector-base
Capacitance
VCB = -10 V
IE = 0
f = 0.1 MHz
CCBO
Pulsed: Pulse duration = 300µs, duty cycle ≤ 1.5%
2/4
MJE210
SOT-32 (TO-126) MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
7.4
TYP.
MAX.
7.8
MIN.
0.291
0.413
0.028
0.015
0.094
0.039
0.606
MAX.
0.307
0.425
0.035
0.025
0.106
0.051
0.630
A
B
10.5
0.7
10.8
0.9
b
b1
C
c1
D
e
0.40
2.4
0.65
2.7
1.0
1.3
15.4
16.0
2.2
4.4
3.8
0.087
0.173
0.150
e3
F
G
H
H2
I
3
3.2
0.118
0.126
0.100
2.54
2.15
1.27
0.3
0.084
0.05
0.011
10o
O
V
10o
1: Base
2: Collector
3: Emitter
0016114/B
3/4
MJE210
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics.
All other names are the property of their respective owners.
© 2003 STMicroelectronics – All Rights reserved
STMicroelectronics GROUP OF COMPANIES
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http://www.st.com
4/4
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