MSC81350M [STMICROELECTRONICS]
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS; 射频与微波晶体管航空电子应用
| 型号： | MSC81350M |
| 厂家： | 
ST |
| 描述： | RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS |
| 文件： | 总5页 (文件大小：78K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MSC81350M
RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
.
.
.
.
.
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REFRACTORY/GOLD METALLIZATION
RUGGEDIZED VSWR 20:1
INTERNAL INPUT/OUTPUT MATCHING
LOW THERMAL RESISTANCE
METAL/CERAMIC HERMETIC PACKAGE
POUT = 350 W MIN. WITH 7.0 dB GAIN
.400 x .400 2NLFL (S042)
hermetically sealed
ORDER CODE
BRANDING
81350M
MSC81350M
PIN CONNECTION
DESCRIPTION
The MSC81350M device is a high power pulsed
transistor specifically designed for IFF avionics
applications.
This device is capable of withstanding a minimum
20:1 load VSWR at any phase angle under full
rated conditions. Low RF thermal resistance and
semi automatic wire bonding techniques ensure
high reliability and product consistency.
The MSC81350M is housed in the unique
1. Collector
2. Base
3. Emitter
4. Base
AMPAC
package with internal input/output
matching structures.
°
= 25 C)
ABSOLUTE MAXIMUM RATINGS (T
case
Symbol
PDISS
IC
Parameter
Value
720
19.8
55
Unit
Power Dissipation*
Device Current*
(TC ≤ 55°C)
W
A
VCC
TJ
Collector-Supply Voltage*
V
°
Junction Temperature (Pulsed RF Operation)
Storage Temperature
250
C
C
°
TSTG
− 65 to +200
THERMAL DATA
°
C/W
RTH(j-c)
Junction-Case Thermal Resistance*
0.20
*Applies only to rated RF amplifier operation
1/5
October 1992
MSC81350M
°
= 25 C)
ELECTRICAL SPECIFICATIONS (T
case
STATIC
Value
Symbol
Test Conditions
Unit
Min. Typ.
Max.
—
BVCBO
BVEBO
BVCER
ICES
IC = 10mA
IE = 1mA
IE = 0mA
IC = 0mA
RBE = 10Ω
65
3.5
65
—
—
—
—
—
—
V
V
—
IC = 25mA
VCE = 50V
VCE = 5V
—
V
25
mA
—
hFE
IC = 1A
15
120
DYNAMIC
Symbol
POUT
Value
Test Conditions
Unit
Min.
Typ. Max.
f = 1090 MHz
f = 1090 MHz
f = 1090 MHz
PIN = 70 W
VCC = 50 V
VCC 50 V
350
360
44
—
—
—
W
%
η
c
PIN 70 W
40
=
=
GP
PIN 70 W
VCC 50 V
7.0
7.1
dB
=
=
Note:
Pulse Width
10 Sec
=
=
µ
Duty Cycle
1%
2/5
MSC81350M
IMPEDANCE DATA
TYPICAL INPUT
IMPEDANCE
ZIN
PIN 70 W
=
VCC 50 V
=
Normalized to 50 ohms
FREQ.
ZIN (Ω)
ZCL (Ω)
L
1025 MHz
1090 MHz
1150 MHz
5.0 + j 5.0
7.0 + j 2.5
3.6 + j 2.5
7.0 − j 2.5
7.5 − j 2.8
6.8 − j 2.7
=
M
H
=
=
TYPICAL COLLECTOR
LOAD IMPEDANCE
ZCL
PIN = 70 W
VCC 50 V
=
Normalized to 50 ohms
3/5
MSC81350M
TEST CIRCUIT
Ref.: Dwg. No. C127471
All dimensions are in inches.
PACKAGE MECHANICAL DATA
4/5
MSC81350M
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specificationsmentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronicsproductsare notauthorized foruse ascritical componentsin life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
5/5
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