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NAND01GW4B2BZA6E [STMICROELECTRONICS]

1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory; 1千兆， 2千兆， 2112字节/ 1056字页， 1.8V / 3V ， NAND闪存
NAND01GW4B2BZA6E
元器件型号： NAND01GW4B2BZA6E
生产厂家： STMICROELECTRONICS    STMICROELECTRONICS
描述和应用：

1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
1千兆， 2千兆， 2112字节/ 1056字页， 1.8V / 3V ， NAND闪存

闪存
PDF文件： 总62页 (文件大小：713K)
下载文档：  下载PDF数据表文档文件
型号参数：NAND01GW4B2BZA6E参数
 查看货源

NAND01GW4B2BZA6F

 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory

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3 STMICROELECTR

NAND01GW4B2BZA6F

 1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory

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1 NUMONYX

NAND01GW4B2BZA6F

 Flash, 64MX16, 25000ns, PBGA63, 9 X 11 MM, 1 MM HEIGHT, 0.80 PITCH, ROHS COMPLIANT, VFBGA-63

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0 NUMONYX

NAND01GW4B2BZA6T

 Flash, 64MX16, 35ns, PBGA63, 9.50 X 12 MM, 1 MM HEIGHT, 0.80 MM PITCH, VFBGA-63

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0 STMICROELECTR

NAND01GW4B2BZB1

 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory

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3 STMICROELECTR

NAND01GW4B2BZB6

 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory

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2 STMICROELECTR

NAND01GW4B2CN1

 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory

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2 STMICROELECTR

NAND01GW4B2CN1

 Flash, 64MX16, 35ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48

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0 STMICROELECTR

NAND01GW4B2CN1E

 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory

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3 STMICROELECTR

NAND01GW4B2CN1E

 1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory

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1 NUMONYX

NAND01GW4B2CN1E

 Flash, 64MX16, 25000ns, PDSO48, 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48

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0 NUMONYX

NAND01GW4B2CN1F

 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory

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3 STMICROELECTR

NAND01GW4B2CN1F

 1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory

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1 NUMONYX

NAND01GW4B2CN1T

 暂无描述

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0 NUMONYX

NAND01GW4B2CN6

 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory

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2 STMICROELECTR
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