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NAND02GW4B2CZB6 [STMICROELECTRONICS]

128MX16 FLASH 3V PROM, 35ns, PBGA63, 9.50 X 12 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, TFBGA-63;

NAND02GW4B2CZB6


元器件型号：	NAND02GW4B2CZB6
生产厂家：	STMICROELECTRONICS
描述和应用：	128MX16 FLASH 3V PROM, 35ns, PBGA63, 9.50 X 12 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, TFBGA-63 可编程只读存储器内存集成电路
PDF文件：	总57页 (文件大小：887K)
下载文档：	下载PDF数据表文档文件
型号参数：NAND02GW4B2CZB6参数

NAND02GW4B2D

2-Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, NAND flash memories

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NAND02GW4B2DN6E

2-Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, NAND flash memories

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NAND02GW4B2DN6F

2-Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, NAND flash memories

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NAND02GW4B2DZA6E

2-Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, NAND flash memories

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NAND02GW4B2DZA6F

2-Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, NAND flash memories

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14 NUMONYX

NAND02GW4B3AZB6F

Flash, 128MX16, 35ns, PBGA63, 9.50 X 12 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, ROHS COMPLIANT, TFBGA-63

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0 STMICROELECTR

NAND04GA3C2A

4Gbit, 2112 Byte Page, 3V, Multi-level NAND Flash Memory

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12 STMICROELECTR

NAND04GA3C2AN1E

4Gbit, 2112 Byte Page, 3V, Multi-level NAND Flash Memory

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2 STMICROELECTR

NAND04GA3C2AN1F

4Gbit, 2112 Byte Page, 3V, Multi-level NAND Flash Memory

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2 STMICROELECTR

NAND04GA3C2AN6E

4Gbit, 2112 Byte Page, 3V, Multi-level NAND Flash Memory

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2 STMICROELECTR

NAND04GA3C2AN6F

4Gbit, 2112 Byte Page, 3V, Multi-level NAND Flash Memory

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2 STMICROELECTR

NAND04G-B2D

4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories

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NAND04GR3B2AN6F

512MX8 FLASH 1.8V PROM, 35ns, PDSO48, 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48

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0 STMICROELECTR

NAND04GR3B2AN6F

512MX8 FLASH 1.8V PROM, 35ns, PDSO48, 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48

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0 STMICROELECTR

NAND04GR3B2CN1

Flash, 512MX8, 35ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48

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0 NUMONYX

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