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NAND04GW3B2BN1T [STMICROELECTRONICS]

512MX8 FLASH 3V PROM, 35ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48;
NAND04GW3B2BN1T
元器件型号： NAND04GW3B2BN1T
生产厂家： STMICROELECTRONICS    STMICROELECTRONICS
描述和应用：

512MX8 FLASH 3V PROM, 35ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48

可编程只读存储器 光电二极管
PDF文件： 总57页 (文件大小：887K)
下载文档：  下载PDF数据表文档文件
型号参数：NAND04GW3B2BN1T参数
 查看货源

NAND04GW3B2BN6

 512MX8 FLASH 3V PROM, 35ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48

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0 STMICROELECTR

NAND04GW3B2BN6

 Flash, 512MX8, 35ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48

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0 STMICROELECTR

NAND04GW3B2BN6E

 4 Gbit, 8 Gbit, 2112 Byte/1056 Word Page 3V, NAND Flash Memories

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55 STMICROELECTR

NAND04GW3B2BN6E

 4 Gbit, 8 Gbit, 2112 Byte/1056 Word Page 3V, NAND Flash Memories

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NAND04GW3B2BN6F

 4 Gbit, 8 Gbit, 2112 Byte/1056 Word Page 3V, NAND Flash Memories

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26 STMICROELECTR

NAND04GW3B2BN6F

 4 Gbit, 8 Gbit, 2112 Byte/1056 Word Page 3V, NAND Flash Memories

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23 NUMONYX

NAND04GW3B2BN6T

 Flash, 512MX8, 35ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48

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0 NUMONYX

NAND04GW3B2BN6T

 Flash, 512MX8, 35ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48

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-
0 STMICROELECTR

NAND04GW3B2BN6T

 512MX8 FLASH 3V PROM, 35ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48

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0 STMICROELECTR

NAND04GW3B2CN1E

 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories

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15 NUMONYX

NAND04GW3B2CN1F

 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories

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10 NUMONYX

NAND04GW3B2CN6E

 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories

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19 NUMONYX

NAND04GW3B2CN6F

 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories

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16 NUMONYX

NAND04GW3B2CZL1E

 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories

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21 NUMONYX

NAND04GW3B2CZL1F

 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories

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11 NUMONYX
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