P0102MA5AL3 [STMICROELECTRONICS]
0.8A, 600V, SCR, TO-92;型号: | P0102MA5AL3 |
厂家: | ST |
描述: | 0.8A, 600V, SCR, TO-92 栅 栅极 |
文件: | 总5页 (文件大小:77K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
®
P01xxxA
SENSITIVE SCR
FEATURES
IT(RMS) = 0.8A
VDRM / VRRM= 200V to 600V
DESCRIPTION
High performance planar technology. These parts
are intended for general purpose applications
where low gate sensitivity is required.
TO92
ABSOLUTE MAXIMUM RATINGS
Symbol
IT(RMS)
IT(AV)
Parameter
Value
0.8
0.5
8
Unit
A
RMS on-state current (180° conduction angle)
Mean on-state current (180° conduction angle)
TI= 55°C
TI= 55°C
A
ITSM
Non repetitive surge peak on-state current
(Tj initial = 25°C )
tp = 8.3 ms
tp = 10 ms
tp = 10 ms
A
7
I2t
I2t Value for fusing
0.24
30
A2s
dI/dt
Critical rate of rise of on-state current
A/µs
IG = 10 mA
diG /dt = 0.1 A/µs.
Tstg
Tj
Storage temperature range
Operating junction temperature range
- 40, + 150
- 40, + 125
°C
°C
Tl
Maximum lead temperature for soldering during 10s
(at 2.0mm from case)
260
Voltage
Symbol
Parameter
Unit
B
D
M
VDRM
VRRM
Repetitive peak off-state voltage
Tj = 125°C RGK = 1K
200
400
600
V
March 2000 - Ed: 1A
1/3
P01xxxA
THERMAL RESISTANCES
Symbol
Parameter
Value
150
80
Unit
°C/W
°C/W
Rth(j-a)
Rth(j-l)
Junction to ambient
Junction to leads for DC
GATE CHARACTERISTICS (maximum values)
PG (AV)= 0.1 W PGM = 2 W (tp = 20 µs)
IGM = 1 A (tp = 20 µs)
ELECTRICAL CHARACTERISTICS
SENSITIVITY
Symbol
Test Conditions
Unit
09
02
11
4
18
0.5
5
15
15
50
IGT
VD=12V (DC) RL=140Ω
Tj= 25°C MIN
MAX
µA
1
200
25
0.8
0.1
VGT
VGD
VD=12V (DC) RL=140Ω
Tj= 25°C MAX
Tj= 125°C MIN
V
V
VD=VDRM RL=3.3kΩ
RGK = 1 KΩ
VGRM
tgd
IRG =10µA
Tj= 25°C MIN
Tj= 25°C TYP
8
V
VD=VDRM ITM= 3 x IT(AV
)
0.5
µs
dIG/dt = 0.1A/µs IG = 10mA
IT= 50mA RGK = 1 KΩ
IG=1mA RGK = 1 KΩ
IH
IL
Tj= 25°C MAX
Tj= 25°C MAX
Tj= 25°C MAX
Tj= 25°C MAX
Tj= 125°C MAX
5
6
7
8
mA
mA
V
VTM
ITM= 1.6A tp= 380µs
1.95
IDRM
IRRM
VD = VDRM RGK = 1 KΩ
VR = VRRM
B/D: 1 - M: 10
100
µA
µA
V/µs
µs
dV/dt
tq
VD = 67%VDRM RGK = 1 KΩ Tj= 125°C MIN
50
75
80
75
100
ITM= 3 x IT(AV) VR=35V
dI/dt=10A/µs tp=100µs
dV/dt=10V/µs
Tj= 125°C MAX
200
VD= 67%VDRM RGK = 1 KΩ
2/3
P01xxxA
Fig.2 : Correlation between maximum average
power dissipation and maximum allowable tem-
perature (Tamb and Ttab).
Fig.1 : Maximum average power dissipation ver-
sus average on-state current.
P (W)
P (W)
Ttab (oC)
-95
1
1
0.8
0.6
0.4
0.2
0
O
360
-100
0.8
Rth(j-a)
DC
-105
-110
-115
-120
-125
=
180o
0.6
0.4
0.2
0
=
120o
=
90 o
=
60o
=
30 o
I
(A)
Tamb (oC)
40
T(AV)
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0
20
60
80
100
120
140
Fig.4 : Relative variation of thermal impedance
junction to ambient versus pulse duration.
Fig.3 : Average on-state current versus tab tem-
perature.
Zth(j-a)/Rth(j-a)
1.00
I
(A)
T(AV)
1
0.8
0.6
0.4
0.2
0
DC
0.10
= 180o
Standard foot print , e(Cu)=35
m
Tamb (oC)
10 20 30 40 50 60 70 80 90 100 110 120 130
tp(s)
0.01
1E-3
1E-2
1E-1
1E+0
1E+1 1E+2 5E+2
0
Fig.5 : Relative variation of gate trigger current
and holding current versus junction temperature.
Fig.6 : Non repetitive surge peak on-state current
versus number of cycles.
I
(A)
TSM
Igt[Tj]
Ih[Tj]
Igt[Tj=25 o C] Ih[Tj=25 o C]
8
7
6
5
4
3
2
1
0
Tj initial = 25oC
10.0
9.0
8.0
7.0
6.0
Igt
5.0
4.0
3.0
2.0
Ih
1.0
0.0
Number of cycles
10
Tj(oC)
1
100
1,000
-40 -20
0
20
40
60
80 100 120 140
3/5
P01xxxA
Fig.8 : On-state characteristics (maximum val-
ues).
Fig.7 : Non repetitive surge peak on-state current
for a sinusoidal pulse with width : tp 10ms, and
corresponding value of I2t.
2
2
I
(A). I t (A s)
I
(A)
TSM
TM
10
100
10
1
Tj initial = 25oC
Tj initial
25oC
I
TSM
Tj max
1
Tj max
Vto =0.95V
Rt =0.600
2
I
t
V
(V)
TM
tp(ms)
0.1
0.1
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
1
10
Fig.9 : Relative variation of holding current versus
gate-cathode resistance (typical values).
Ih(Rgk)
Ih(Rgk=1k
)
5.0
1.0
Tj=25 o C
Rgk( )
0.1
1.0E+00 1.0E+01 1.0E+02 1.0E+03 1.0E+04 1.0E+05 1.0E+06
ORDERING INFORMATION
Bulk
or
P 01 02 A A
1 A A 3
5 x L x
Tape & Reel
SCR Planar
Package
Sensitivity
A = TO92
Current
Voltage
4/5
P01xxxA
PACKAGE MECHANICAL DATA
TO92
DIMENSIONS
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
REF.
A
A
B
C
D
E
F
a
1.35
0.053
a
4.70
0.185
B
C
2.54
0.100
4.40
0.173
0.500
F
D
E
12.70
3.70
0.45
0.146
0.017
MARKING
Type
Marking
P0109BA
P0109DA
P0109MA
P0102BA
P0102DA
P0102MA
P0111BA
P0111DA
P0111MA
P0115BA
P0115DA
P0115MA
P0118BA
P0118DA
P0118MA
Package
Weight
Delivery mode
Base qty
P0109BA
P0109DA
P0109MA
P0102BA
P0102DA
P0102MA
P0111BA
P0111DA
P0111MA
P0115BA
P0115DA
P0115MA
P0118BA
P0118DA
P0118MA
Bulk
Tape & Reel
2500
2000
TO92
0.2g
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-
proval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
© 2000 STMicroelectronics - Printed in Italy - All rights reserved.
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia
Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.
http://www.st.com
5/5
相关型号:
©2020 ICPDF网 联系我们和版权申明