P0102MA5AL3 [STMICROELECTRONICS]

0.8A, 600V, SCR, TO-92;
P0102MA5AL3
型号: P0102MA5AL3
厂家: ST    ST
描述:

0.8A, 600V, SCR, TO-92

栅 栅极
文件: 总5页 (文件大小:77K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
®
P01xxxA  
SENSITIVE SCR  
FEATURES  
IT(RMS) = 0.8A  
VDRM / VRRM= 200V to 600V  
DESCRIPTION  
High performance planar technology. These parts  
are intended for general purpose applications  
where low gate sensitivity is required.  
TO92  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
IT(RMS)  
IT(AV)  
Parameter  
Value  
0.8  
0.5  
8
Unit  
A
RMS on-state current (180° conduction angle)  
Mean on-state current (180° conduction angle)  
TI= 55°C  
TI= 55°C  
A
ITSM  
Non repetitive surge peak on-state current  
(Tj initial = 25°C )  
tp = 8.3 ms  
tp = 10 ms  
tp = 10 ms  
A
7
I2t  
I2t Value for fusing  
0.24  
30  
A2s  
dI/dt  
Critical rate of rise of on-state current  
A/µs  
IG = 10 mA  
diG /dt = 0.1 A/µs.  
Tstg  
Tj  
Storage temperature range  
Operating junction temperature range  
- 40, + 150  
- 40, + 125  
°C  
°C  
Tl  
Maximum lead temperature for soldering during 10s  
(at 2.0mm from case)  
260  
Voltage  
Symbol  
Parameter  
Unit  
B
D
M
VDRM  
VRRM  
Repetitive peak off-state voltage  
Tj = 125°C RGK = 1K  
200  
400  
600  
V
March 2000 - Ed: 1A  
1/3  
P01xxxA  
THERMAL RESISTANCES  
Symbol  
Parameter  
Value  
150  
80  
Unit  
°C/W  
°C/W  
Rth(j-a)  
Rth(j-l)  
Junction to ambient  
Junction to leads for DC  
GATE CHARACTERISTICS (maximum values)  
PG (AV)= 0.1 W PGM = 2 W (tp = 20 µs)  
IGM = 1 A (tp = 20 µs)  
ELECTRICAL CHARACTERISTICS  
SENSITIVITY  
Symbol  
Test Conditions  
Unit  
09  
02  
11  
4
18  
0.5  
5
15  
15  
50  
IGT  
VD=12V (DC) RL=140Ω  
Tj= 25°C MIN  
MAX  
µA  
1
200  
25  
0.8  
0.1  
VGT  
VGD  
VD=12V (DC) RL=140Ω  
Tj= 25°C MAX  
Tj= 125°C MIN  
V
V
VD=VDRM RL=3.3kΩ  
RGK = 1 KΩ  
VGRM  
tgd  
IRG =10µA  
Tj= 25°C MIN  
Tj= 25°C TYP  
8
V
VD=VDRM ITM= 3 x IT(AV  
)
0.5  
µs  
dIG/dt = 0.1A/µs IG = 10mA  
IT= 50mA RGK = 1 KΩ  
IG=1mA RGK = 1 KΩ  
IH  
IL  
Tj= 25°C MAX  
Tj= 25°C MAX  
Tj= 25°C MAX  
Tj= 25°C MAX  
Tj= 125°C MAX  
5
6
7
8
mA  
mA  
V
VTM  
ITM= 1.6A tp= 380µs  
1.95  
IDRM  
IRRM  
VD = VDRM RGK = 1 KΩ  
VR = VRRM  
B/D: 1 - M: 10  
100  
µA  
µA  
V/µs  
µs  
dV/dt  
tq  
VD = 67%VDRM RGK = 1 KTj= 125°C MIN  
50  
75  
80  
75  
100  
ITM= 3 x IT(AV) VR=35V  
dI/dt=10A/µs tp=100µs  
dV/dt=10V/µs  
Tj= 125°C MAX  
200  
VD= 67%VDRM RGK = 1 KΩ  
2/3  
P01xxxA  
Fig.2 : Correlation between maximum average  
power dissipation and maximum allowable tem-  
perature (Tamb and Ttab).  
Fig.1 : Maximum average power dissipation ver-  
sus average on-state current.  
P (W)  
P (W)  
Ttab (oC)  
-95  
1
1
0.8  
0.6  
0.4  
0.2  
0
O
360  
-100  
0.8  
Rth(j-a)  
DC  
-105  
-110  
-115  
-120  
-125  
=
180o  
0.6  
0.4  
0.2  
0
=
120o  
=
90 o  
=
60o  
=
30 o  
I
(A)  
Tamb (oC)  
40  
T(AV)  
0
0.1  
0.2  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0
20  
60  
80  
100  
120  
140  
Fig.4 : Relative variation of thermal impedance  
junction to ambient versus pulse duration.  
Fig.3 : Average on-state current versus tab tem-  
perature.  
Zth(j-a)/Rth(j-a)  
1.00  
I
(A)  
T(AV)  
1
0.8  
0.6  
0.4  
0.2  
0
DC  
0.10  
= 180o  
Standard foot print , e(Cu)=35  
m
Tamb (oC)  
10 20 30 40 50 60 70 80 90 100 110 120 130  
tp(s)  
0.01  
1E-3  
1E-2  
1E-1  
1E+0  
1E+1 1E+2 5E+2  
0
Fig.5 : Relative variation of gate trigger current  
and holding current versus junction temperature.  
Fig.6 : Non repetitive surge peak on-state current  
versus number of cycles.  
I
(A)  
TSM  
Igt[Tj]  
Ih[Tj]  
Igt[Tj=25 o C] Ih[Tj=25 o C]  
8
7
6
5
4
3
2
1
0
Tj initial = 25oC  
10.0  
9.0  
8.0  
7.0  
6.0  
Igt  
5.0  
4.0  
3.0  
2.0  
Ih  
1.0  
0.0  
Number of cycles  
10  
Tj(oC)  
1
100  
1,000  
-40 -20  
0
20  
40  
60  
80 100 120 140  
3/5  
P01xxxA  
Fig.8 : On-state characteristics (maximum val-  
ues).  
Fig.7 : Non repetitive surge peak on-state current  
for a sinusoidal pulse with width : tp 10ms, and  
corresponding value of I2t.  
2
2
I
(A). I t (A s)  
I
(A)  
TSM  
TM  
10  
100  
10  
1
Tj initial = 25oC  
Tj initial  
25oC  
I
TSM  
Tj max  
1
Tj max  
Vto =0.95V  
Rt =0.600  
2
I
t
V
(V)  
TM  
tp(ms)  
0.1  
0.1  
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
5
5.5  
1
10  
Fig.9 : Relative variation of holding current versus  
gate-cathode resistance (typical values).  
Ih(Rgk)  
Ih(Rgk=1k  
)
5.0  
1.0  
Tj=25 o C  
Rgk( )  
0.1  
1.0E+00 1.0E+01 1.0E+02 1.0E+03 1.0E+04 1.0E+05 1.0E+06  
ORDERING INFORMATION  
Bulk  
or  
P 01 02 A A  
1 A A 3  
5 x L x  
Tape & Reel  
SCR Planar  
Package  
Sensitivity  
A = TO92  
Current  
Voltage  
4/5  
P01xxxA  
PACKAGE MECHANICAL DATA  
TO92  
DIMENSIONS  
Millimeters Inches  
Min. Typ. Max. Min. Typ. Max.  
REF.  
A
A
B
C
D
E
F
a
1.35  
0.053  
a
4.70  
0.185  
B
C
2.54  
0.100  
4.40  
0.173  
0.500  
F
D
E
12.70  
3.70  
0.45  
0.146  
0.017  
MARKING  
Type  
Marking  
P0109BA  
P0109DA  
P0109MA  
P0102BA  
P0102DA  
P0102MA  
P0111BA  
P0111DA  
P0111MA  
P0115BA  
P0115DA  
P0115MA  
P0118BA  
P0118DA  
P0118MA  
Package  
Weight  
Delivery mode  
Base qty  
P0109BA  
P0109DA  
P0109MA  
P0102BA  
P0102DA  
P0102MA  
P0111BA  
P0111DA  
P0111MA  
P0115BA  
P0115DA  
P0115MA  
P0118BA  
P0118DA  
P0118MA  
Bulk  
Tape & Reel  
2500  
2000  
TO92  
0.2g  
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of  
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by  
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to  
change without notice. This publication supersedes and replaces all information previously supplied.  
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-  
proval of STMicroelectronics.  
The ST logo is a registered trademark of STMicroelectronics  
© 2000 STMicroelectronics - Printed in Italy - All rights reserved.  
STMicroelectronics GROUP OF COMPANIES  
Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia  
Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.  
http://www.st.com  
5/5  

相关型号:

P0102MN

0.8A SCRs
STMICROELECTR

P0102MN-5AA4

Sensitive standard SCRs up to 0.8 A
STMICROELECTR

P0102MN1AA3

0.8A SCRs
STMICROELECTR

P0102MN2AL3

0.8A SCRs
STMICROELECTR

P0102MN5AA4

0.8A SCRs
STMICROELECTR

P0102MN5XA4

SILICON CONTROLLED RECTIFIER,600V V(DRM),500MA I(T),SOT-223
STMICROELECTR

P0102YN5AA4

0.8A SCRs
STMICROELECTR

P010354

TERMINAL NUMBERS FOR REF. ONLY
E-SWITCH

P010358

TERMINAL NUMBERS FOR REF. ONLY
E-SWITCH

P0103HD05

DC-DC Regulated Power Supply Module, 1 Output, 0.5W, Hybrid, DIP-14/5
SENSITRON

P0103HD1

DC-DC Regulated Power Supply Module, 1 Output, 1W, Hybrid, DIP-14/5
SENSITRON