P0111DN5XA4 [STMICROELECTRONICS]
SILICON CONTROLLED RECTIFIER,400V V(DRM),500MA I(T),SOT-223;
| 型号： | P0111DN5XA4 |
| 厂家： | 
ST |
| 描述： | SILICON CONTROLLED RECTIFIER,400V V(DRM),500MA I(T),SOT-223 栅 栅极 |
| 文件： | 总6页 (文件大小：60K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
P01xxxN
SENSITIVE SCR
FEATURES
n
IT(RMS) = 0.8A
n
VDRM / VRRM= 200V to 600V
A
K
DESCRIPTION
A
G
High performance planar technology. These parts
are intended for general purpose applications
where low gate sensitivity is required.
SOT223
(Plastic)
ABSOLUTE MAXIMUM RATINGS
Symbol
IT(RMS)
IT(AV)
ITSM
Parameter
Value
0.8
0.5
8
Unit
A
*
RMS on-state current (180° conduction angle)
Mean on-state current (180° conduction angle)
Ta= 70°C
Ta= 70°C
tp = 8.3 ms
tp = 10 ms
tp = 10 ms
*
A
Non repetitive surge peak on-state current
A
(Tj initial = 25°C )
7
I2t
I2t Value for fusing
0.24
30
A2s
dI/dt
Critical rate of rise of on-state current
A/µs
IG = 10 mA
diG /dt = 0.1 A/µs.
Storage temperature range
Operating junction temperature range
Tstg
Tj
- 40, + 150
- 40, + 125
°C
°C
Tl
Maximum lead temperature for soldering during 10s
260
2
* : With 5cm copper (e=35µm) surface under tab.
Voltage
Symbol
Parameter
Unit
B
D
M
VDRM
VRRM
Repetitive peak off-state voltage
Tj = 125°C RGK = 1K
200
400
600
V
March 2000 - Ed: 1A
1/6
P01xxxN
THERMAL RESISTANCES
Symbol
Parameter
Value
60
Unit
°C/W
°C/W
Rth(j-a)
Rth(j-l)
Junction to ambient *
Junction to tab for DC
30
2
* : With 5cm copper (e=35µm) surface under tab.
GATE CHARACTERISTICS (maximum values)
PG (AV)= 0.1 W PGM = 2 W (tp = 20 µs)
IGM = 1 A (tp = 20 µs)
ELECTRICAL CHARACTERISTICS
Sensitivity
Symbol
Test Conditions
Unit
09
-
02
-
11
4
IGT
VD=12V (DC) RL=140Ω
VD=12V (DC) RL=140Ω
Tj= 25°C
Tj= 25°C
MIN
MAX
MAX
MIN
MIN
TYP
µA
1
200
0.8
0.1
8
25
VGT
VGD
VGRM
tgd
V
V
VD=VDRM RL=3.3kΩ RGK = 1 KΩ Tj= 125°C
IRG =10µA
Tj= 25°C
Tj= 25°C
V
VD=VDRM ITM= 3 x IT(AV
)
0.5
µs
dIG/dt = 0.1A/µs IG = 10mA
IT= 50mA RGK = 1 KΩ
IG=1mA RGK = 1 KΩ
IH
IL
Tj= 25°C
Tj= 25°C
Tj= 25°C
Tj= 25°C
Tj= 125°C
Tj= 125°C
Tj= 125°C
MAX
MAX
MAX
MAX
MAX
MIN
5
6
mA
mA
V
ITM= 1.6A tp= 380µs
VTM
1.95
VD = VDRM RGK = 1 KΩ
VR = VRRM
IDRM
IRRM
B/D: 1 - M: 10
100
µA
µA
V/µs
µs
dV/dt
tq
VD = 67%VDRM RGK = 1 KΩ
50
75
80
ITM= 3 x IT(AV) VR=35V
dI/dt=10A/µs tp=100µs
dV/dt=10V/µs VD= 67%VDRM
RGK = 1 KΩ
MAX
200
2/6
P01xxxN
Fig.1 : Maximum average power dissipation ver-
sus average on-state current.
Fig.2 : Correlation between maximum average
power dissipation and maximum allowable tem-
perature (Tamb and Ttab).
P (W)
P (W)
Ttab (oC)
-95
1
1
O
360
-100
0.8
0.8
0.6
0.4
0.2
0
Rth(j-a)
DC
-105
-110
-115
-120
-125
=
180o
0.6
0.4
0.2
0
= 120o
= 90o
=
60o
=
30o
I
(A)
Tamb (oC)
40
T(AV)
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0
20
60
80
100
120
140
Fig.3 : Average on-state current versus tab tem-
perature.
Fig.4 : Relative variation of thermal impedance
junction to ambient versus pulse duration.
Zth(j-a)/Rth(j-a)
1.00
I
(A)
T(AV)
1
0.8
0.6
0.4
0.2
0
DC
0.10
= 180o
Standard foot print , e(Cu)=35
m
Tamb (oC)
10 20 30 40 50 60 70 80 90 100 110 120 130
tp(s)
0.01
1E-3
0
1E-2
1E-1
1E+0
1E+1
1E+2 5E+2
Fig.5 : Relative variation of gate trigger current
and holding current versus junction temperature.
Fig.6 : Non repetitive surge peak on-state current
versus number of cycles.
Igt[Tj]
Ih[Tj]
I
(A)
TSM
Igt[Tj=25 o C] Ih[Tj=25 o C]
8
7
6
5
4
3
2
1
0
Tj initial = 25oC
10.0
9.0
8.0
7.0
6.0
5.0
4.0
Igt
3.0
2.0
Ih
1.0
0.0
Tj(oC)
Number of cycles
10
1
100
1,000
-40 -20
0
20
40
60
80 100 120 140
3/6
P01xxxN
Fig.7 : Non repetitive surge peak on-state current
for a sinusoidal pulse with width : tp 10ms, and
corresponding value of I2t.
Fig.8 : On-state characteristics (maximum val-
ues).
2
2
I
(A). I t (A s)
I
(A)
TSM
TM
100
10
1
10
Tj initial = 25oC
Tj initial
25oC
I
TSM
Tj max
1
Tj max
Vto =0.95V
Rt =0.600
2
I
t
V
(V)
TM
5
tp(ms)
0.1
0.1
1
10
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5.5
Fig.9 : Relative variation of holding current versus
gate-cathode resistance (typical values).
Ih(Rgk)
Ih(Rgk=1k
)
5.0
1.0
Tj=25 o
C
Rgk( )
0.1
1.0E+00 1.0E+01 1.0E+02 1.0E+03 1.0E+04 1.0E+05 1.0E+06
4/6
P01xxxN
PACKAGE MECHANICAL DATA
SOT223 (Plastic)
DIMENSIONS
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
REF.
A
c
V
A1
A
A1
B
1.80
0.071
B
0.02
0.70
3.00
0.26
6.50
2.3
0.001
e1
D
0.60
2.90
0.24
6.30
0.80 0.024 0.027 0.031
3.10 0.114 0.118 0.122
0.32 0.009 0.010 0.013
6.70 0.248 0.256 0.264
0.090
B1
c
B1
D
e
H
E
e1
E
4.6
0.181
3.30
6.70
3.50
7.00
3.70 0.130 0.138 0.146
7.30 0.264 0.276 0.287
10° max
H
e
V
FOOT PRINT
ORDERING INFORMATION
Tape & Reel
P 01 02 A N
5 x A 4
SCR Planar
Package
N = SOT223
Sensitivity
Current
Voltage
5/6
P01xxxN
MARKING
Type
Marking
P2B
Package
Weight
Delivery mode
Base qty
P0102BN
P0109BN
P0111BN
P0102DN
P0109DN
P0111DN
P0102MN
P0109MN
P0111MN
P9B
P1B
P2D
SOT223
0.11g
Tape & Reel
1000
P9D
P1D
P2M
P9M
P1M
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequencesof
use of suchinformation nor for any infringement of patents or other rights of third parties which may result from its use. No license isgranted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-
proval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
2000 STMicroelectronics - Printed in Italy - All rights reserved.
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6/6
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