P180N55 [STMICROELECTRONICS]
N-CHANNEL 55V - 2.9m-ohm - 120A - D-2 PAK - TO-220 MDmesh-TM Low Voltage Power MOSFET; N沟道55V - 2.9米欧姆 - 120A - D- 2 PAK - TO- 220的MDmesh -TM低电压功率MOSFET
| 型号： | P180N55 |
| 厂家： | 
ST |
| 描述： | N-CHANNEL 55V - 2.9m-ohm - 120A - D-2 PAK - TO-220 MDmesh-TM Low Voltage Power MOSFET |
| 文件： | 总11页 (文件大小：176K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STB180N55
STP180N55
N-CHANNEL 55V - 2.9mΩ - 120A - D²PAK - TO-220
MDmesh™ Low Voltage Power MOSFET
TARGET SPECIFICATION
General features
V
R
I
D
Type
DSS
DS(on)
STB180N55
STP180N55
55V
55V
3.5mΩ
3.8mΩ
120A (Note 1)
120A (Note 1)
3
■ ULTRA LOW ON-RESISTANCE
■ 100% AVALANCHE TESTED
3
1
2
1
D²PAK
TO-220
Description
This N-Channel enhancement mode MOSFET is
the latest refinement of STMicroelectronic unique
“Single Feature Size™“ strip-based process with
less critical aligment steps and therefore a
remarkable manufacturing reproducibility. The
resulting transistor shows extremely high packing
density for low on-resistance, rugged avalanche
characteristics and low gate charge.
Internal schematic diagram
Applications
■ HIGH CURRENT SWITCHING APPLICATION
Order codes
Sales Type
Marking
Package
Packaging
STB180N55
STP180N55
B180N55
P180N55
D²PAK
TAPE & REEL
TUBE
TO-220
Rev 1
1/11
January 2006
This is a preliminary information on a new product foreseen to be developed. Details are subject to change without notice
www.st.com
11
1 Electrical ratings
STP180N55 - STB180N55
1
Electrical ratings
Table 1.
Symbol
Absolute maximum ratings
Parameter
Value
Unit
V
V
Drain-source Voltage (V =0)
55
DS
GS
V
Gate-Source Voltage
± 20
120
120
480
V
GS
I
I
Note 1
Note 1
Note 2
Drain Current (continuous) at T = 25°C
A
D
D
C
Drain Current (continuous) at T = 100°C
A
C
I
Drain Current (pulsed)
A
DM
P
Total Dissipation at T = 25°C
315
2.1
W
TOT
C
Derating Factor
W/°C
V/ns
mJ
dv/dt
Note 4
Peak Diode Recovery voltage slope
Single Pulse Avalanche Energy
TBD
TBD
E
AS
T
Operating Junction Temperature
Storage Temperature
j
-55 to 175
°C
T
stg
Table 2.
Thermal data
TO-220
D²PAK
Unit
Rthj-case Thermal Resistance Junction-case
0.48
°C/W
°C/W
Rthj-a
Thermal Resistance Junction-ambient Max
Thermal Resistance Junction-ambient Max
62.5
--
--
Rthj-pcb
Note 5
35
°C/W
°C
Maximum Lead Temperature For Soldering
Purpose
T
300
--
l
2/11
STP180N55 - STB180N55
2 Electrical characteristics
2
Electrical characteristics
(T
= 25 °C unless otherwise specified)
CASE
Table 3.
On/off states
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Drain-Source Breakdown
Voltage
V
I = 250µA, V = 0
55
V
(BR)DSS
D
GS
V
= Max Rating,
10
µA
µA
Zero Gate Voltage Drain
DS
DS
I
I
DSS
Current (V = 0)
V
= Max Rating,Tc = 125°C
100
GS
Gate Body Leakage Current
V
= ±20V
±200
4
nA
V
GSS
GS
(V = 0)
DS
V
V
V
= V , I = 250µA
Gate Threshold Voltage
2
GS(th)
DS(on)
DS
GS
D
= 10V, I = 60A
D²PAK
TO-220
3.5
3.8
mΩ
mΩ
Static Drain-Source On
Resistance
GS
D
R
Table 4.
Symbol
Dynamic
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
Note 3
V
=15V, I = 60A
Forward Transconductance
TBD
S
fs
DS
DS
D
C
C
iss
Input Capacitance
6200
1800
100
pF
pF
pF
V
=25V, f=1 MHz, V =0
Output Capacitance
oss
GS
Reverse Transfer Capacitance
C
rss
Q
V
V
=44V, I = 120A
g
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
110
TBD
TBD
TBD
nC
nC
nC
DD
GS
D
Q
Q
=10V
gs
gd
(see Figure 2)
3/11
2 Electrical characteristics
STP180N55 - STB180N55
Table 5.
Symbol
Switching times
Parameter
Test Conditions
=27V, I = 60A,
Min.
Typ.
Max.
Unit
V
DD
D
t
Turn-on Delay Time
Rise Time
TBD
TBD
ns
ns
d(on)
R =4.7Ω, V =10V
G
GS
t
r
(see Figure 3)
=27V, I = 60A,
V
DD
D
t
Off voltage Rise Time
FallTime
TBD
TBD
ns
ns
d(off)
R =4.7Ω, V =10V
G
GS
t
f
(see Figure 3)
Table 6.
Symbol
Source drain diode
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
Source-drain Current
120
480
A
A
SD
I
Note 2 Source-drain Current (pulsed)
SDM
V
Note 3
I
I
=120A, V =0
Forward on Voltage
1.5
V
SD
SD
GS
t
rr
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
TBD
TBD
TBD
ns
nC
A
=120A, di/dt = 100A/µs,
SD
Q
rr
V
=30V, Tj=150°C
DD
I
RRM
(1) Current limited by package
(2) Pulse width limited by safe operating area
(3) Pulsed: pulse duration = 300µs, duty cycle 1.5%
(4) Starting Tj=25°C, Id=60A, Vdd=40V
(5) When mounted o inch² FR4 2oz Cu
4/11
STP180N55 - STB180N55
3 Test circuits
3
Test circuits
Figure 1. Switching Times Test Circuit For
Resistive Load
Figure 2. Gate Charge Test Circuit
Figure 3. Test Circuit For Indictive Load
Switching and Diode Recovery
Times
Figure 5. Unclamped Inductive Load Test
Circuit
Figure 4. Unclamped Inductive Waveform
Figure 6. Switching Time Waveform
5/11
4 Package mechanical data
STP180N55 - STB180N55
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in compliance
with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also
marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are
available at: www.st.com
6/11
STP180N55 - STB180N55
4 Package mechanical data
TO-220 MECHANICAL DATA
mm.
inch
TYP.
DIM.
MIN.
TYP
MAX.
4.60
0.88
1.70
0.70
15.75
10.40
2.70
5.15
1.32
6.60
2.72
14
MIN.
0.173
0.024
0.045
0.019
0.60
MAX.
0.181
0.034
0.066
0.027
0.620
0.409
0.106
0.202
0.052
0.256
0.107
0.551
0.154
A
b
4.40
0.61
1.15
0.49
15.25
10
b1
c
D
E
0.393
0.094
0.194
0.048
0.244
0.094
0.511
0.137
e
2.40
4.95
1.23
6.20
2.40
13
e1
F
H1
J1
L
L1
L20
L30
øP
Q
3.50
3.93
16.40
28.90
0.645
1.137
3.75
2.65
3.85
2.95
0.147
0.104
0.151
0.116
7/11
4 Package mechanical data
STP180N55 - STB180N55
D2PAK MECHANICAL DATA
mm.
inch
DIM.
MIN.
4.4
TYP
MAX.
4.6
MIN.
0.173
0.098
0.001
0.027
0.044
0.017
0.048
0.352
TYP.
MAX.
0.181
0.106
0.009
0.036
0.067
0.023
0.053
0.368
A
A1
A2
B
2.49
0.03
0.7
2.69
0.23
0.93
1.7
B2
C
1.14
0.45
1.23
8.95
0.6
C2
D
1.36
9.35
D1
E
8
0.315
0.334
10
10.4
0.393
E1
G
8.5
4.88
15
5.28
15.85
1.4
0.192
0.590
0.050
0.055
0.094
0.208
0.625
0.055
0.068
0.126
L
L2
L3
M
1.27
1.4
1.75
3.2
2.4
R
0.4
0.015
V2
0º
4º
1
8/11
STP180N55 - STB180N55
5 Packing mechanical data
5
Packing mechanical data
2
D PAK FOOTPRINT
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
mm
MIN. MAX. MIN. MAX.
330 12.992
inch
DIM.
A
B
C
D
G
N
T
1.5
12.8
20.2
24.4
100
0.059
13.2 0.504 0.520
0795
26.4 0.960 1.039
3.937
30.4
1.197
BASE QTY
BULK QTY
1000
TAPE MECHANICAL DATA
1000
mm
inch
DIM.
MIN. MAX. MIN. MAX.
10.5 10.7 0.413 0.421
15.7 15.9 0.618 0.626
A0
B0
D
1.5
1.6 0.059 0.063
D1
E
1.59 1.61 0.062 0.063
1.65 1.85 0.065 0.073
F
11.4
4.8
3.9
11.9
1.9
50
11.6 0.449 0.456
5.0 0.189 0.197
4.1 0.153 0.161
12.1 0.468 0.476
2.1 0.075 0.082
1.574
K0
P0
P1
P2
R
T
0.25 0.35 0.0098 0.0137
23.7 24.3 0.933 0.956
W
* on sales type
9/11
6 Revision History
STP180N55 - STB180N55
6
Revision History
Date
Revision
Changes
03-Jan-2006
1
First release
10/11
STP180N55 - STB180N55
6 Revision History
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11/11
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