P60NS04ZB [STMICROELECTRONICS]
N-channel clamped - 10mohm - 60A - TO-220 Fully protected Mesh Overlay Power MOSFET; N沟道钳位 - 为10Mohm - 60A - TO- 220完全保护网覆盖功率MOSFET
| 型号： | P60NS04ZB |
| 厂家： | 
ST |
| 描述： | N-channel clamped - 10mohm - 60A - TO-220 Fully protected Mesh Overlay Power MOSFET |
| 文件： | 总13页 (文件大小：257K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STP60NS04ZB
N-channel clamped - 10mΩ - 60A - TO-220
Fully protected Mesh Overlay™ Power MOSFET
General features
Type
VDSS
RDS(on)
ID
STP60NS04ZB Clamped
< 0.015Ω
60A
■ 100% avalanche tested
■ Low capacitance and gate charge
3
2
1
■ 175 °C maximum junction temperature
TO-220
Description
This fully clamped Power MOSFET is produced
by using the latest advanced Company’s Mesh
Overlay process which is based on a novel strip
layout. The inherent benefits of the new
technology coupled with the extra clamping
capabilities make this product particularly suitable
for the harshest operation conditions such as
those encountered in the automotive
Internal schematic diagram
environment. Any other application requiring extra
ruggedness is also recommended.
Applications
■ Switching application
Order codes
Part number
Marking
Package
Packaging
STP60NS04ZB
P60NS04ZB
TO-220
Tube
October 2006
Rev 2
1/13
www.st.com
13
Contents
STP60NS04ZB
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
4
5
Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2/13
STP60NS04ZB
Electrical ratings
1
Electrical ratings
Table 1.
Symbol
Absolute maximum ratings
Parameter
Value
Unit
VDS
VGS
ID
Drain-source voltage (VGS = 0)
Gate- source voltage
Clamped
V
V
Clamped
60
Drain current (continuous) at TC = 25°C
Drain current (continuous) at TC = 100°C
Drain gate current (continuous)
Gate source current (continuous)
Drain current (pulsed)
A
ID
42
A
IDG
IGS
50
mA
mA
A
50
(1)
IDM
Ptot
240
150
1
Total dissipation at TC = 25°C
Derating factor
W
W/°C
Gate-source ESD
VESD(G-S)
VESD(G-D)
VESD(D-S)
6
4
4
KV
KV
KV
(HBM - C = 100pF, R=1.5 kΩ)
Gate-drain ESD
(HBM - C = 100pF, R=1.5 kΩ)
Drain-source ESD
(HBM - C = 100pF, R=1.5 kΩ)
Tstg
Tj
Storage temperature
-65 to 175
°C
Max. operating junction temperature
1. Pulse width limited by safe operating area.
Table 2.
Thermal data
Rthj-case Thermal resistance junction-case max
1
°C/W
°C/W
°C
Rthj-amb Thermal resistance junction-ambient max
62.5
300
TJ
Maximum lead temperature for soldering purpose
Symbol
Parameter
Max Value
Unit
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
IAR
60
A
Single pulse avalanche energy
EAS
400
mJ
(starting Tj = 25 °C, ID = IAR, VDD = 30 V)
3/13
Electrical characteristics
STP60NS04ZB
2
Electrical characteristics
(T
=25°C unless otherwise specified)
CASE
Table 3.
Symbol
On/off states
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Drain-source
ID = 1mA, VGS =0
-40 < Tj < 175°C
V(BR)DSS
33
V
breakdown voltage
Zero gate voltage
V
DS = 16V; TJ =150°C
VDS = 16V; TJ =175°C
GS = 10V;Tj =175°C
50
µA
µA
IDSS
drain current (VGS = 0)
100
Gate-body leakage
current (VDS = 0)
V
50
µA
µA
IGSS
VGS = 16V;Tj =175°C
150
Gate-source breakdown
voltage
VGSS
IGS = 100µA
18
V
V
VDS = VGS, ID = 1mA
-40 < TJ < 150°C
VGS(th)
Gate threshold voltage
1.7
3
4.2
VGS = 10V, ID = 30A
VGS = 16V, ID = 30A
11
10
15
14
mΩ
mΩ
Static drain-source on
resistance
RDS(on)
Table 4.
Symbol
Dynamic
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Forward
transconductance
(1)
gfs
VDS= 15V, ID=30A
20
40
S
Input capacitance
Output capacitance
Ciss
Coss
Crss
1700
800
2100
1000
240
pF
pF
pF
VDS = 25V, f = 1MHz,
VGS = 0
Reverse transfer
capacitance
190
tr(Voff)
Turn-on delay time
Fall time
Vclamp = 30V, ID = 60A
RG = 4.7Ω VGS = 10V
(see Figure 14)
60
45
75
60
ns
ns
ns
tf
tc
Cross-over time
100
130
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 18V, ID = 60A,
VGS = 10V, RG = 4.7Ω
(see Figure 15)
48
13
16
42
nC
nC
nC
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
4/13
STP60NS04ZB
Electrical characteristics
Table 5.
Source drain diode
Parameter
Symbol
Test conditions
Min.
Typ.
Max. Unit
Source-drain current
ISD
60
A
A
Source-drain current
(pulsed)
(1)
ISDM
240
(2)
VSD
Forward on voltage
ISD = 60A, VGS = 0
1.5
V
trr
Reverse recovery time
ISD = 60A, di/dt = 100A/µs,
50
62
ns
nC
A
Qrr
Reverse recovery charge VDD = 15V, Tj = 150°C
IRRM
Reverse recovery current (see Figure 16)
2.6
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
5/13
Electrical characteristics
STP60NS04ZB
2.1
Electrical characteristics (curves)
Figure 1. Safe operating area
Figure 2. Thermal impedance
Figure 3. Output characterisics
Figure 4. Transfer characteristics
Figure 5. Transconductance
Figure 6. Static drain-source on resistance
6/13
STP60NS04ZB
Electrical characteristics
Figure 7. Gate charge vs gate-source voltage Figure 8. Capacitance variations
Figure 9. Normalized gate threshold voltage Figure 10. Normalized on resistance vs
vs temperature
temperature
Figure 11. Source-drain diode forward
characteristics
Figure 12. Zero gate voltage drain current vs
temperature
7/13
Electrical characteristics
Figure 13. Normalized BV
STP60NS04ZB
vs temperature
DSS
8/13
STP60NS04ZB
Test circuit
3
Test circuit
Figure 14. Switching times test circuit for
resistive load
Figure 15. Gate charge test circuit
Figure 16. Test circuit for inductive load
switching and diode recovery times
Figure 17. Unclamped Inductive load test
circuit
Figure 18. Unclamped inductive waveform
Figure 19. Switching time waveform
9/13
Package mechanical data
STP60NS04ZB
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
10/13
STP60NS04ZB
Package mechanical data
TO-220 MECHANICAL DATA
mm.
inch
DIM.
MIN.
4.40
0.61
1.15
0.49
15.25
10
TYP
MAX.
4.60
0.88
1.70
0.70
15.75
10.40
2.70
5.15
1.32
6.60
2.72
14
MIN.
0.173
0.024
0.045
0.019
0.60
TYP.
MAX.
0.181
0.034
0.066
0.027
0.620
0.409
0.106
0.202
0.052
0.256
0.107
0.551
0.154
A
b
b1
c
D
E
0.393
0.094
0.194
0.048
0.244
0.094
0.511
0.137
e
2.40
4.95
1.23
6.20
2.40
13
e1
F
H1
J1
L
L1
L20
L30
øP
Q
3.50
3.93
16.40
28.90
0.645
1.137
3.75
2.65
3.85
2.95
0.147
0.104
0.151
0.116
11/13
Revision history
STP60NS04ZB
5
Revision history
Table 6.
Date
Revision history
Revision
Changes
21-Jun-2004
04-Oct-2006
1
2
Complete document
New template, no content change
12/13
STP60NS04ZB
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