P6NC80 [STMICROELECTRONICS]
N-CHANNEL 800V - 1.5ohm - 5.4A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH?III MOSFET; N沟道800V - 1.5ohm - 5.4A TO- 220 / FP / D2PAK / I2PAK齐纳保护的PowerMESH III MOSFET ？
| 型号： | P6NC80 |
| 厂家： | 
ST |
| 描述： | N-CHANNEL 800V - 1.5ohm - 5.4A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH?III MOSFET |
| 文件： | 总13页 (文件大小：512K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STP6NC80Z - STP6NC80ZFP
STB6NC80Z - STB6NC80Z-1
N-CHANNEL 800V - 1.5Ω - 5.4A TO-220/FP/D²PAK/I²PAK
Zener-Protected PowerMESH™III MOSFET
TYPE
V
DSS
R
I
D
DS(on)
STP6NC80Z/FP
STB6NC80Z/-1
800V
800V
< 1.8 Ω
< 1.8 Ω
5.4 A
5.4 A
3
1
■
■
TYPICAL R (on) = 1.5 Ω
DS
3
2
D²PAK
1
EXTREMELY HIGH dv/dt AND CAPABILITY
GATE-TO- SOURCE ZENER DIODES
100% AVALANCHE TESTED
VERY LOW GATE INPUT RESISTANCE
GATE CHARGE MINIMIZED
TO-220
TO-220FP
■
■
■
3
2
1
I²PAK
(Tabless TO-220)
DESCRIPTION
The third generation of MESH OVERLAY™ Power
MOSFETs for very high voltage exhibits unsurpassed
on-resistance per unit area while integrating back-to-
back Zener diodes between gate and source. Such ar-
rangement gives extra ESD capability with higher rug-
gedness performance as requested by a large variety
of single-switch applications.
APPLICATIONS
■
SINGLE-ENDED SMPS IN MONITORS,
COMPUTER AND INDUSTRIAL APPLICATION
WELDING EQUIPMENT
■
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
STP(B)6NC80Z(-1) STP6NC80ZFP
V
Drain-source Voltage (V = 0)
800
800
± 25
V
V
DS
GS
V
Drain-gate Voltage (R = 20 kΩ)
DGR
GS
V
Gate- source Voltage
V
GS
I
Drain Current (continuous) at T = 25°C
5.4
3.4
21
5.4(*)
3.4(*)
21(*)
40
A
D
C
I
Drain Current (continuous) at T = 100°C
A
D
C
I
(1)
Drain Current (pulsed)
A
DM
P
Total Dissipation at T = 25°C
125
1
W
TOT
C
Derating Factor
0.32
W/°C
mA
KV
V/ns
V
I
Gate-source Current (●)
±50
3
GS
V
Gate source ESD(HBM-C=100pF, R=15KΩ)
Peak Diode Recovery voltage slope
Insulation Winthstand Voltage (DC)
Storage Temperature
ESD(G-S)
dv/dt
3
V
ISO
--
2000
T
stg
–65 to 150
150
°C
°C
T
Max. Operating Junction Temperature
j
(•)Pulse width limited by safe operating area
December 2002
(1)I ≤5.4A, di/dt ≤100A/µs, V ≤ V
, T ≤ T
j JMAX
SD
DD
(BR)DSS
(*)Pulse width Limited by maximum temperature allowed
1/13
.
STP6NC80Z/FP/STP6NC80Z-1
THERMAL DATA
TO-220 / D²PAK /
I²PAK
TO-220FP
Rthj-case
Rthj-amb
Thermal Resistance Junction-case Max
1
3.13
°C/W
°C/W
°C
Thermal Resistance Junction-ambient Max
30
300
T
Maximum Lead Temperature For Soldering Purpose
l
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
Avalanche Current, Repetitive or Not-Repetitive
I
AR
5.4
A
(pulse width limited by T max)
j
Single Pulse Avalanche Energy
E
237
mJ
AS
(starting T = 25 °C, I = I , V = 50 V)
j
D
AR
DD
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Drain-source
Breakdown Voltage
Test Conditions
Min.
Typ.
Max.
Unit
V
I
I
= 250 µA, V = 0
800
V
(BR)DSS
D
D
GS
Breakdown Voltage Temp.
Coefficient
∆BV
/∆T
= 1 mA, V = 0
0.9
V/°C
DSS
J
GS
V
V
= Max Rating
1
µA
µA
DS
Zero Gate Voltage
I
DSS
GSS
Drain Current (V = 0)
GS
= Max Rating, T = 125 °C
50
DS
GS
C
Gate-body Leakage
I
V
= ±20V
±10
µA
Current (V = 0)
DS
ON (1)
Symbol
Parameter
Test Conditions
Min.
Typ.
4
Max.
5
Unit
V
V
GS(th)
V
V
= V , I = 250µA
Gate Threshold Voltage
3
DS
GS
GS
D
R
Static Drain-source On
Resistance
= 10V, I = 3 A
1.5
1.8
Ω
DS(on)
D
DYNAMIC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
(1)
Forward Transconductance
V
> I
x R
DS(on)max,
7
S
fs
DS
D(on)
I
= 3A
D
C
C
V
= 25V, f = 1 MHz, V = 0
DS GS
Input Capacitance
Output Capacitance
1600
125
12
pF
pF
pF
iss
oss
C
rss
Reverse Transfer
Capacitance
2/13
STP6NC80Z/FP/STP6NC80Z-1
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
V
R
= 400 V, I = 3 A
Turn-on Delay Time
26
ns
d(on)
DD
D
= 4.7Ω V = 10V
G
GS
t
Rise Time
10
ns
r
(see test circuit, Figure 3)
Q
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
45
12
18
nC
nC
nC
g
V
V
= 640V, I = 6A,
= 10V
DD
GS
D
Q
gs
Q
gd
SWITCHING OFF
Symbol
Parameter
Off-voltage Rise Time
Fall Time
Test Conditions
Min.
Typ.
11
Max.
Unit
ns
t
r(Voff)
V
R
= 640V, I = 6 A,
DD
D
t
= 4.7Ω, V = 10V
13
ns
f
G
GS
(see test circuit, Figure 5)
t
Cross-over Time
19
ns
c
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
5.4
21
Unit
A
I
SD
Source-drain Current
I
(2)
(1)
Source-drain Current (pulsed)
Forward On Voltage
A
SDM
V
I
I
= 5.4 A, V = 0
1.6
V
SD
SD
SD
GS
t
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
850
8.1
19
ns
µC
A
rr
= 6 A, di/dt = 100A/µs,
= 50V, T = 150°C
Q
V
rr
DD
j
(see test circuit, Figure 5)
I
RRM
GATE-SOURCE ZENER DIODE
Symbol
Parameter
Test Conditions
Igs=± 1mA (Open Drain)
T=25°C Note(3)
Min.
Typ.
Max.
Unit
Gate-Source Breakdown
Voltage
BV
25
V
GSO
-4
αT
Voltage Thermal Coefficient
Dynamic Resistance
1.3
90
10 /°C
I
= 50 mA, V = 0
GS
Rz
Ω
D
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. ∆V = αT (25°-T) BV
(25°)
BV
GSO
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally
be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient
and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid
the usage of external components.
3/13
STP6NC80Z/FP/STP6NC80Z-1
Safe Operating Area For TO-220 /D²PAK/I²PAK
Safe Operating Area For TO-220FP
Thermal Impedance For TO-220 /D²PAK/I²PAK
Thermal Impedance For TO-220FP
Output Characteristics
Transfer Characteristics
4/13
STP6NC80Z/FP/STP6NC80Z-1
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
Normalized Gate Threshold Voltage vs Temp.
Normalized On Resistance vs Temperature
5/13
STP6NC80Z/FP/STP6NC80Z-1
Source-drain Diode Forward Characteristics
6/13
STP6NC80Z/FP/STP6NC80Z-1
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For
Fig. 4: Gate Charge test Circuit
Resistive Load
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
7/13
STP6NC80Z/FP/STP6NC80Z-1
TO-220 MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
TYP.
MAX.
4.60
1.32
2.72
MIN.
0.173
0.048
0.094
MAX.
0.181
0.051
0.107
A
C
4.40
1.23
2.40
D
D1
E
1.27
0.050
0.49
0.61
1.14
1.14
4.95
2.4
0.70
0.88
1.70
1.70
5.15
2.7
0.019
0.024
0.044
0.044
0.194
0.094
0.393
0.027
0.034
0.067
0.067
0.203
0.106
0.409
F
F1
F2
G
G1
H2
L2
L4
L5
L6
L7
L9
DIA.
10.0
10.40
16.4
0.645
13.0
2.65
15.25
6.2
14.0
2.95
15.75
6.6
0.511
0.104
0.600
0.244
0.137
0.147
0.551
0.116
0.620
0.260
0.154
0.151
3.5
3.93
3.85
3.75
L2
Dia.
L5
L9
L7
L6
L4
P011C
8/13
STP6NC80Z/FP/STP6NC80Z-1
TO-220FP MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
4.4
TYP.
MAX.
4.6
2.7
2.75
0.7
1
MIN.
0.173
0.098
0.098
0.017
0.030
0.045
0.045
0.195
0.094
0.393
MAX.
0.181
0.106
0.108
0.027
0.039
0.067
0.067
0.204
0.106
0.409
A
B
2.5
D
2.5
E
0.45
0.75
1.15
1.15
4.95
2.4
F
F1
F2
G
1.7
1.7
5.2
2.7
10.4
G1
H
10
L2
L3
L4
L6
L7
Ø
16
0.630
28.6
9.8
15.9
9
30.6
10.6
16.4
9.3
1.126
0.385
0.626
0.354
0.118
1.204
0.417
0.645
0.366
0.126
3
3.2
L3
L6
L7
¯
1 2 3
L4
L2
9/13
STP6NC80Z/FP/STP6NC80Z-1
TO-262 (I2PAK) MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
4.4
TYP.
MAX.
4.6
MIN.
0.173
0.098
0.027
0.044
0.017
0.048
0.352
0.094
0.393
0.515
0.137
0.050
MAX.
0.181
0.106
0.036
0.067
0.023
0.053
0.368
0.106
0.409
0.531
0.149
0.055
A
A1
B
2.49
0.7
2.69
0.93
1.7
B2
C
1.14
0.45
1.23
8.95
2.4
0.6
C2
D
1.36
9.35
2.7
e
E
10
10.4
13.6
3.78
1.4
L
13.1
3.48
1.27
L1
L2
L1
L2
D
L
P011P5/E
10/13
STP6NC80Z/FP/STP6NC80Z-1
TO-263 (D2PAK) MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
4.4
TYP.
MAX.
4.6
MIN.
0.173
0.098
0.027
0.044
0.017
0.047
0.352
0.393
0.192
0.590
0.050
0.055
MAX.
0.181
0.106
0.036
0.067
0.023
0.053
0.368
0.409
0.208
0.624
0.055
0.068
A
A1
B
2.49
0.7
2.69
0.93
1.7
B2
C
1.14
0.45
1.21
8.95
10
0.6
C2
D
1.36
9.35
10.4
5.28
15.85
1.4
E
G
4.88
15
L
L2
L3
1.27
1.4
1.75
D
A
C
C2
DETAIL "A"
DETAIL "A"
A1
B
B2
E
G
L3
L2
L
P011P6/E
11/13
STP6NC80Z/FP/STP6NC80Z-1
D2PAK FOOTPRINT
TUBE SHIPMENT (no suffix)*
TAPE AND REEL SHIPMENT (suffix ”T4”)*
REEL MECHANICAL DATA
mm
MIN. MAX. MIN. MAX.
330 12.992
inch
DIM.
A
B
C
D
G
N
T
1.5
0.059
12.8
20.2
24.4
100
13.2 0.504 0.520
0795
26.4 0.960 1.039
3.937
30.4
1.197
BASE QTY
BULK QTY
1000
TAPE MECHANICAL DATA
1000
mm
inch
DIM.
MIN. MAX. MIN. MAX.
10.5 10.7 0.413 0.421
15.7 15.9 0.618 0.626
A0
B0
D
1.5
1.6 0.059 0.063
D1
E
1.59 1.61 0.062 0.063
1.65 1.85 0.065 0.073
F
11.4
4.8
3.9
11.9
1.9
50
11.6 0.449 0.456
5.0 0.189 0.197
4.1 0.153 0.161
12.1 0.468 0.476
2.1 0.075 0.082
1.574
K0
P0
P1
P2
R
T
0.25 0.35 0.0098 0.0137
23.7 24.3 0.933 0.956
W
* on sales type
12/13
STP6NC80Z/FP/STP6NC80Z-1
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
© The ST logo is a registered trademark of STMicroelectronics
© 2002 STMicroelectronics - Printed in Italy - All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco
Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.
© http://www.st.com
13/13
相关型号：
©2020 ICPDF网 联系我们和版权申明