P80NF55-08 [STMICROELECTRONICS]

N-channel 55 V - 0.0065 Ω - 80 A - TO-220 - D2PAK - TO-247 STripFET™ Power MOSFET; N沟道55 V - 0.0065 Ω - 80 A - TO- 220 - D2PAK - TO- 247的STripFET ?功率MOSFET
P80NF55-08
型号: P80NF55-08
厂家: ST    ST
描述:

N-channel 55 V - 0.0065 Ω - 80 A - TO-220 - D2PAK - TO-247 STripFET™ Power MOSFET
N沟道55 V - 0.0065 Ω - 80 A - TO- 220 - D2PAK - TO- 247的STripFET ?功率MOSFET

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STB80NF55-08  
STP80NF55-08 - STW80NF55-08  
N-channel 55 V - 0.0065 - 80 A - TO-220 - D2PAK - TO-247  
STripFET™ Power MOSFET  
Features  
RDS(on)  
max  
Type  
VDSS  
ID  
STB80NF55-08  
STP80NF55-08  
STW80NF55-08  
55 V  
55 V  
55 V  
< 0.008 80 A  
< 0.008 80 A  
< 0.008 80 A  
3
2
1
TO-247  
TO-220  
Standard threshold drive  
3
1
Application  
PAK  
Switching applications  
Description  
Figure 1.  
Internal schematic diagram  
This Power MOSFET is the latest development of  
STMicroelectronics unique “single feature size”  
strip-based process. The resulting transistor  
shows extremely high packing density for low on-  
resistance, rugged avalance characteristics and  
less critical alignment steps therefore a  
remarkable manufacturing reproducibility.  
Table 1.  
Device summary  
Order codes  
Marking  
Package  
PAK  
Packaging  
STB80NF55-08  
STP80NF55-08  
STW80NF55-08  
B80NF55-08  
P80NF55-08  
W80NF55-08  
Tape & reel  
Tube  
TO-220  
TO-247  
Tube  
March 2008  
Rev 1  
1/15  
www.st.com  
15  
Contents  
STP80NF55-08 - STB80NF55-08 - STW80NF55-08  
Contents  
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4  
2.1  
Electrical characteristics (curves)  
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6  
3
4
5
6
Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8  
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9  
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13  
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14  
2/15  
STP80NF55-08 - STB80NF55-08 - STW80NF55-08  
Electrical ratings  
1
Electrical ratings  
Table 2.  
Symbol  
Absolute maximum ratings  
Parameter  
Value  
Unit  
VDS  
VGS  
Drain-source voltage (VGS = 0)  
Gate- source voltage  
55  
20  
V
V
(1)  
ID  
Drain current (continuos) at TC = 25 °C  
Drain current (continuos) at TC = 100 °C  
Drain current (pulsed)  
80  
A
(1)  
ID  
80  
A
(2)  
IDM  
320  
300  
2
A
PTOT  
Total dissipation at TC = 25 °C  
Derating factor  
W
W/°C  
Tj  
Operating junction temperature  
Storage temperature  
-55 to 175  
°C  
Tstg  
1. Current limited package  
2. Pulse width limited by safe operating area  
Table 3.  
Symbol  
Thermal resistance  
Parameter  
Value  
Unit  
D2PAK  
TO-220 TO-247  
Rthj-case Thermal resistance junction-case max  
Rthj-amb Thermal resistance junction-ambient max  
0.5  
°C/W  
°C/W  
35(1)  
300  
62.5  
50  
Maximum lead temperature for soldering  
Tl  
°C  
purpose  
1. When mounted on 1 inch2 FR-4 board, 2 oz Cu  
Table 4.  
Symbol  
Avalanche characteristics  
Parameter  
Max value  
Unit  
Avalanche current, repetitive or not-repetitive  
(pulse width limited by Tj max)  
IAR  
40  
A
Single pulse avalanche energy  
EAS  
1000  
mJ  
(starting Tj = 25 °C, ID = IAR, VDD = 30 V)  
3/15  
Electrical characteristics  
STP80NF55-08 - STB80NF55-08 - STW80NF55-08  
2
Electrical characteristics  
(T  
= 25 °C unless otherwise specified)  
CASE  
Table 5.  
Symbol  
On/off states  
Parameter  
Test conditions  
Min.  
Typ.  
Max. Unit  
Drain-source breakdown  
voltage  
V(BR)DSS  
ID = 250 µA, VGS = 0  
55  
V
V
DS = max rating  
1
µA  
µA  
Zero gate voltage drain  
current (VGS = 0)  
IDSS  
VDS = max rating@125 °C  
10  
Gate body leakage current  
(VDS = 0)  
IGSS  
V
GS = 20 V  
100  
4
nA  
VGS(th)  
RDS(on)  
Gate threshold voltage  
VDS = VGS, ID = 250 µA  
2
3
V
Static drain-source on  
resistance  
VGS = 10 V, ID = 40 A  
0.0065 0.008  
Table 6.  
Symbol  
Dynamic  
Parameter  
Test conditions  
Min. Typ.  
Max. Unit  
(1)  
Forward transconductance VDS =15 V , ID = 18 A  
Input capacitance  
40  
S
gfs  
Ciss  
Coss  
Crss  
3740  
830  
pF  
pF  
pF  
Output capacitance  
VDS = 25 V, f = 1 MHz,  
VGS= 0  
Reverse transfer  
capacitance  
265  
Qg  
Qgs  
Qgd  
VDD= 27 V, ID = 80 A  
VGS =10 V  
Total gate charge  
Gate-source charge  
Gate-drain charge  
112  
20  
155  
nC  
nC  
nC  
40  
(see Figure 14)  
1. Pulsed: pulse duration=300µs, duty cycle 1.5%  
4/15  
STP80NF55-08 - STB80NF55-08 - STW80NF55-08  
Electrical characteristics  
Min. Typ. Max. Unit  
Table 7.  
Symbol  
Switching times  
Parameter  
Test conditions  
td(on)  
tr  
td(off)  
tf  
Turn-on delay time  
Rise time  
20  
110  
75  
ns  
ns  
ns  
ns  
VDD = 27 V, ID = 40 A  
RG = 4.7 VGS = 10 V  
(see Figure 13)  
Turn-off-delay time  
Fall time  
35  
Table 8.  
Symbol  
Source drain diode  
Parameter  
Test conditions  
Min Typ. Max Unit  
ISD  
Source-drain current  
80  
320  
1.5  
A
A
V
(1)  
ISDM  
Source-drain current (pulsed)  
Forward on voltage  
VSD  
ISD = 80 A, VGS = 0  
ISD = 80 A,VDD = 25 V  
di/dt=100 A/µs,  
Tj =150 °C  
(2)  
trr  
Reverse recovery time  
Reverse recovery charge  
Reverse recovery current  
80  
230  
5.7  
ns  
nC  
A
Qrr  
IRRM  
(see Figure 18)  
1. Pulse width limited by safe operating area  
2. Pulsed: pulse duration = 300µs, duty cycle 1.5%  
5/15  
Electrical characteristics  
STP80NF55-08 - STB80NF55-08 - STW80NF55-08  
Figure 3. Thermal impedance  
2.1  
Electrical characteristics (curves)  
Figure 2. Safe operating area  
Figure 4. Output characteristics  
Figure 5. Transfer characteristics  
Figure 6. Normalized BVDSS vs temperature Figure 7. Static drain-source on resistance  
6/15  
STP80NF55-08 - STB80NF55-08 - STW80NF55-08  
Electrical characteristics  
Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations  
Figure 10. Normalized gate threshold voltage Figure 11. Normalized on resistance vs  
vs temperature  
temperature  
Figure 12. Source-drain diode forward  
characteristics  
7/15  
Test circuit  
STP80NF55-08 - STB80NF55-08 - STW80NF55-08  
Figure 14. Gate charge test circuit  
3
Test circuit  
Figure 13. Switching times test circuit for  
resistive load  
Figure 15. Test circuit for inductive load  
switching and diode recovery times  
Figure 16. Unclamped inductive load test  
circuit  
Figure 17. Unclamped inductive waveform  
Figure 18. Switching time waveform  
8/15  
STP80NF55-08 - STB80NF55-08 - STW80NF55-08  
Package mechanical data  
4
Package mechanical data  
In order to meet environmental requirements, ST offers these devices in ECOPACK®  
packages. These packages have a lead-free second level interconnect . The category of  
second level interconnect is marked on the package and on the inner box label, in  
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering  
conditions are also marked on the inner box label. ECOPACK is an ST trademark.  
ECOPACK specifications are available at:: www.st.com  
9/15  
Package mechanical data  
STP80NF55-08 - STB80NF55-08 - STW80NF55-08  
TO-220 mechanical data  
mm  
Typ  
inch  
Typ  
Dim  
Min  
Max  
Min  
Max  
A
b
4.40  
0.61  
1.14  
0.48  
15.25  
4.60  
0.88  
1.70  
0.70  
15.75  
0.173  
0.024  
0.044  
0.019  
0.6  
0.181  
0.034  
0.066  
0.027  
0.62  
b1  
c
D
D1  
E
1.27  
0.050  
10  
10.40  
2.70  
5.15  
1.32  
6.60  
2.72  
14  
0.393  
0.094  
0.194  
0.048  
0.244  
0.094  
0.511  
0.137  
0.409  
0.106  
0.202  
0.051  
0.256  
0.107  
0.551  
0.154  
e
2.40  
4.95  
1.23  
6.20  
2.40  
13  
e1  
F
H1  
J1  
L
L1  
L20  
L30  
P  
Q
3.50  
3.93  
16.40  
0.645  
28.90  
1.137  
3.75  
3.85  
2.95  
0.147  
0.104  
0.151  
0.116  
2.65  
10/15  
STP80NF55-08 - STB80NF55-08 - STW80NF55-08  
Package mechanical data  
TO-247 Mechanical data  
mm.  
Typ  
Dim.  
Min.  
Max.  
A
A1  
b
4.85  
5.15  
2.20  
1.0  
2.60  
1.40  
2.40  
3.40  
b1  
b2  
c
2.0  
3.0  
0.40  
19.85  
15.45  
0.80  
D
20.15  
15.75  
E
e
5.45  
18.50  
5.50  
L
14.20  
14.80  
4.30  
L1  
L2  
øP  
øR  
S
3.70  
3.55  
3.65  
4.50  
5.50  
11/15  
Package mechanical data  
STP80NF55-08 - STB80NF55-08 - STW80NF55-08  
PAK (TO-263) mechanical data  
mm  
Typ  
inch  
Typ  
Dim  
Min  
Max  
Min  
Max  
A
A1  
b
4.40  
0.03  
0.70  
1.14  
0.45  
1.23  
8.95  
7.50  
10  
4.60  
0.23  
0.93  
1.70  
0.60  
1.36  
9.35  
0.173  
0.001  
0.027  
0.045  
0.017  
0.048  
0.352  
0.295  
0.394  
0.334  
0.181  
0.009  
0.037  
0.067  
0.024  
0.053  
0.368  
b2  
c
c2  
D
D1  
E
10.40  
0.409  
E1  
e
8.50  
2.54  
0.1  
e1  
H
4.88  
15  
5.28  
15.85  
2.69  
2.79  
1.40  
1.75  
0.192  
0.590  
0.099  
0.090  
0.05  
0.208  
0.624  
0.106  
0.110  
0.055  
0.069  
J1  
L
2.49  
2.29  
1.27  
1.30  
L1  
L2  
R
0.051  
0.4  
0.016  
V2  
0°  
8°  
0°  
8°  
0079457_M  
12/15  
STP80NF55-08 - STB80NF55-08 - STW80NF55-08  
Packaging mechanical data  
5
Packaging mechanical data  
2
D PAK FOOTPRINT  
TAPE AND REEL SHIPMENT  
REEL MECHANICAL DATA  
mm  
MIN. MAX. MIN. MAX.  
330 12.992  
inch  
DIM.  
A
B
C
D
G
N
T
1.5  
12.8  
20.2  
24.4  
100  
0.059  
13.2 0.504 0.520  
0795  
26.4 0.960 1.039  
3.937  
30.4  
1.197  
BASE QTY  
BULK QTY  
1000  
TAPE MECHANICAL DATA  
1000  
mm  
inch  
DIM.  
MIN. MAX. MIN. MAX.  
10.5 10.7 0.413 0.421  
15.7 15.9 0.618 0.626  
A0  
B0  
D
1.5  
1.6 0.059 0.063  
D1  
E
1.59 1.61 0.062 0.063  
1.65 1.85 0.065 0.073  
F
11.4  
4.8  
3.9  
11.9  
1.9  
50  
11.6 0.449 0.456  
5.0 0.189 0.197  
4.1 0.153 0.161  
12.1 0.468 0.476  
2.1 0.075 0.082  
1.574  
K0  
P0  
P1  
P2  
R
T
0.25 0.35 0.0098 0.0137  
23.7 24.3 0.933 0.956  
W
* on sales type  
13/15  
Revision history  
STP80NF55-08 - STB80NF55-08 - STW80NF55-08  
6
Revision history  
Table 9.  
Date  
03-Mar-2008  
Document revision history  
Revision  
Changes  
1
First release  
14/15  
STP80NF55-08 - STB80NF55-08 - STW80NF55-08  
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15/15  

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