PD54008L [STMICROELECTRONICS]
RF POWER TRANSISTORS The LdmoST PLASTIC FAMILY; RF功率晶体管的LDMOST塑料系列
| 型号： | PD54008L |
| 厂家： | 
ST |
| 描述： | RF POWER TRANSISTORS The LdmoST PLASTIC FAMILY |
| 文件： | 总8页 (文件大小：95K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD54008L
RF POWER TRANSISTORS
The LdmoST PLASTIC FAMILY
ADVANCED DATA
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
• EXCELLENT THERMAL STABILITY
• COMMON SOURCE CONFIGURATION
• BROADBAND PERFORMANCES
P
OUT
= 8 W WITH 15 dB GAIN @ 500 MHz
• NEW LEADLESS PLASTIC PACKAGE
• ESD PROTECTION
PowerFLAT™(5x5)
ORDER CODE
PD54008L
BRANDING
• SUPPLIED IN TAPE & REEL OF 3K UNITS
54008
PIN CONNECTION
DESCRIPTION
The PD54008L is a common source N-Channel,
enhancement-mode lateral Field-Effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It operates
at 7 V in common source mode at frequencies of up
to 1 GHz. PD54008L boasts the excellent gain,
linearity and reliability of STH1LV latest LDMOS
technology mounted in the innovative leadless
SMD plastic package, PowerFLAT™.
PD54008L’s superior linearity performance makes
it an ideal solution for portable radio.
TOP VIEW
ABSOLUTE MAXIMUM RATINGS (T
= 25 °C)
CASE
Symbol
Parameter
Value
25
Unit
V
V
Drain-Source Voltage
Gate-Source Voltage
Drain Current
(BR)DSS
V
-0.5 to +15
5
V
GS
I
D
A
P
Power Dissipation (@ Tc = 70°C)
Max. Operating Junction Temperature
Storage Temperature
26.7
W
°C
°C
DISS
Tj
150
T
-65 to +150
STG
THERMAL DATA
R
th(j-c)
Junction -Case Thermal Resistance
3
°C/W
May, 28 2003
1/8
PD54008L
ELECTRICAL SPECIFICATION (T
= 25 °C)
CASE
STATIC (Per Section)
Symbol
Test Conditions
Min.
Typ.
Max.
1
Unit
µA
µA
V
I
I
V
GS
V
GS
V
DS
V
GS
V
GS
V
GS
V
GS
= 0 V
= 5 V
= 10 V
= 10 V
= 0 V
= 0 V
= 0 V
V = 25 V
DS
DSS
V
= 0 V
1
GSS
DS
V
I
D
= 50 mA
= 0.5 A
= 7.5 V
2.0
5.0
GS(Q)
V
I
D
0.09
80
V
DS(ON)
C
V
V
V
f = 1 MHz
f = 1 MHz
f = 1 MHz
pF
pF
pF
ISS
DS
C
= 7.5 V
= 7.5 V
60
OSS
RSS
DS
DS
C
6.6
DYNAMIC
Symbol
Test Conditions
Min.
8
Typ.
Max.
Unit
W
P
1dB
V
= 7.5 V
= 7.5 V
= 7.5 V
= 9.5 V
I
I
I
I
= 200 mA
= 200 mA
= 200 mA
= 200 mA
f = 500 MHz
f = 500 MHz
f = 500 MHz
f = 500 MHz
DD
DD
DD
DD
DQ
DQ
DQ
DQ
G
V
V
V
P
P
P
= 8 W
= 8 W
= 8 W
15
50
dB
%
PS
OUT
OUT
OUT
η
D
Load
mismatch
20:1
VSWR
ALL PHASE ANGLES
(1)
IMPEDANCE DATA
Z
IN
(Ω)
Z
DL
(Ω)
FREQ. (MHz)
D
480
500
520
1.12 - j 2.02
1.3 - j 2.01
1.66 - j 2.55
2.01 + j 0.13
1.84 + j 0.7
1.66 + j 1.51
Z
DL
Typical Input
Impedance
Typical Drain
Load Impedance
(1) In Broadband amplifier
G
Zin
S
ESD PROTECTION CHARACTERISTICS
Test Conditions
Class
Human Body Model
Machine Model
2
M3
MOISTURE SENSITIVITY LEVEL
Test Methodology
Rating
J-STD-020B
MSL 3
2/8
PD54008L
TYPICAL PERFORMANCE
Power Gain Vs Output Power
Efficiency Vs Output Power
20
80
Idq = 200 mA
19
70
60
50
40
30
20
10
0
18
17
Idq = 150 mA
16
Idq = 100 mA
15
14
13
12
11
10
Idq = 200 mA
f = 500 MHz
Vds = 7.5 V
f = 500 MHz
Vds = 7.5 V
0
1
2
3
4
5
6
7
8
9
10
0
1
2
3
4
5
6
7
8
9
10
Pout (W)
Pout (W)
Return Loss Vs Output Power
Capacitance Vs Supply Voltage
1000
0
f = 1 MHz
-5
-10
-15
-20
-25
-30
Ciss
100
Coss
10
Crss
Idq = 200 mA
f = 500 MHz
Vds = 7.5 V
1
0
1
2
3
4
5
6
7
8
9
10
0
1
2
3
4
5
6
7
8
9
Vds (V)
Pout (W)
3/8
PD54008L
TYPICAL PERFORMANCE
Power Gain Vs Frequency (BROADBAND)
Efficiency Vs Frequency (BROADBAND)
14
70
12
10
8
60
50
40
30
20
10
6
4
2
Idq = 150 mA
Pin = 26 dBm
Idq = 150 mA
Pin = 26 dBm
0
0
470
480
490
500
510
520 530
470
480
490
500
510
520
530
f (MHz)
f (MHz)
Return Loss Vs Frequency (BROADBAND)
0
-4
-8
-12
-16
Idq = 150 mA
Pin = 26 dBm
-20
470
480
490
500
510
520
530
f (MHz)
4/8
PD54008L
TEST CIRCUIT SCHEMATIC
TEST CIRCUIT COMPONENT PART LIST
COMPONENT
DESCRIPTION
B1, B2
Ferrite bead
C1, C16
300 pF, 100 mil ATC
C2, C3, C4, C13,C14
1 -:- 20 pF Trimmer cap - JOHANSON
0.8 -:- 10 pF Trimmer cap - JOHANSON
36 pF, 100 mil ATC
C15
C5
C6
51 pF, 100 mil ATC
C7
62 pF, 100 mil ATC
C8, C17
C9
150 pF, 100 mil CHIP CAP
1 nF, 100 mil CHIP CAP
C10, C18
C11, C19
C12, C20
C21
L
1000 pF, 100 mil CHIP CAP
0.1 nF, 100 mil CHIP CAP
µ
10 F 50 V Electrolytic Capacitor
15 pF, 100 mil ATC
43nH, Coilcraft
Ω
33 K , 1W CHIP Resistor
R1
Ω
1 K , 1W CHIP Resistor
R3
Ω
R4
15 , 1W CHIP Resistor
Z1
0.49" X 0.080" MICROSTRIP
1.024" X 0.080" MICROSTRIP
0.079" X 0.080" MICROSTRIP
0.24" X 0.223" MICROSTRIP
0.079" X 0.223" MICROSTRIP
0.138" X 0.223" MICROSTRIP
0.259" X 0.223" MICROSTRIP
0.079" X 0.080" MICROSTRIP
0.413" X 0.080" MICROSTRIP
0.756" X 0.080" MICROSTRIP
0.61" X 0.080" MICROSTRIP
Type N Flange Mount
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
Z10
Z11
N1, N2
Board
ε
ROGER, ULTRA LAM 2000 THK 0.030", r = 2.55 2oz. ED cu SIDES
5/8
PD54008L
TAPE & REEL DIMENSIONS
mm
MIN.
5.15
5.15
1.0
TYP.
5.25
5.25
1.1
MAX
5.35
5.35
1.2
Ao
Bo
Ko
6/8
PD54008L
PowerFLAT™ MECHANICAL DATA
mm
Inch
TYP.
DIM.
MIN.
TYP.
0.90
0.02
0.24
0.25
0.51
0.71
5.00
0.30
5.00
2.57
1.27
3.37
0.74
0.21
MAX
1.00
0.05
MIN.
MAX
0.039
0.002
A
A1
A3
AA
b
0.035
0.001
0.009
0.01
0.15
0.43
0.64
0.35
0.58
0.79
0.006
0.017
0.025
0.014
0.023
0.031
0.020
0.028
0.197
0.011
0.197
0.101
0.050
0.132
0.03
c
D
d
E
E2
e
2.49
2.64
0.098
0.104
f
g
h
0.008
7/8
PD54008L
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is registered trademark of STMicroelectronics
2003 STMicroelectronics - All Rights Reserved
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8/8
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