PD57045S [STMICROELECTRONICS]
RF POWER TRANSISTORS The LdmoST Plastic FAMILY; RF功率晶体管的LDMOST塑料系列
| 型号： | PD57045S |
| 厂家： | 
ST |
| 描述： | RF POWER TRANSISTORS The LdmoST Plastic FAMILY |
| 文件： | 总8页 (文件大小：93K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD57045
PD57045S
RF POWER TRANSISTORS
LdmoST
The
Plastic FAMILY
PRELIMINARY DATA
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
• EXCELLENT THERMAL STABILITY
• COMMON SOURCE CONFIGURATION
• POUT = 45 W with 13 dB gain @ 945 MHz / 28V
• NEW RF PLASTIC PACKAGE
PowerSO-10RF
(Formed Lead)
DESCRIPTION
ORDER CODE
PD57045
BRANDING
XPD57045
The PD57045 is a common source N-Channel, en-
hancement-mode, lateral Field-Effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It operates
at 28V in common source mode at frequencies of
up to 1GHz. PD57045 boasts the excellent gain,
linearity and reliability of ST’s latest LDMOS tech-
nology mounted in the first true SMD plastic RF
power package, PowerSO-10RF. PD57045’s su-
perior linearity performance makes it an ideal so-
lution for base station applications.
PowerSO-10RF
(Straight Lead)
The PowerSO-10 plastic package, designed to of-
fer high reliability, is the first ST JEDEC approved,
high power SMD package. It has been specially
optimized for RF needs and offers excellent RF
performances and ease of assembly.
ORDER CODE
PD57045S
BRANDING
XPD57045S
= 25 0C)
ABSOLUTE MAXIMUM RATINGS(T
CASE
Parameter
Drain-Source Voltage
Symbol
Value
Unit
V
65
±20
V
V
(BR)DSS
V
Gate-Source Voltage
Drain Current
GS
I
5
A
D
0
P
73
W
DISS
Power Dissipation (@ Tc = 70 C)
T
Max. Operating Junction Temperature
Storage Temperature
165
0
j
C
C
0
T
-65 to 165
STG
THERMAL DATA(T
= 70 0C)
CASE
Junction-Case Thermal Resistance
th(j-c)
0C/W
1/8
R
1.3
May 2000
PD57045 PD57045S
= 25 0C)
ELECTRICAL SPECIFICATION(T
CASE
STATIC
Symbol
Parameter
Min.
Typ.
Max.
Unit
V
V
V
V
V
V
V
V
V
V
V
= 0 V
= 0 V
= 20 V
= 28 V
= 10 V
= 10 V
= 0 V
= 0 V
= 0 V
I
DS
= 1 mA
= 28 V
= 0 V
65
(BR)DSS
GS
GS
GS
DS
GS
DS
GS
GS
GS
I
V
V
I
1
µA
µA
V
DSS
DS
DS
I
1
GSS
V
= 250 mA
= 3 A
2.0
2.0
5.0
0.9
GS(Q)
D
V
I
I
0.7
2.7
86
V
DS(ON)
D
D
g
FS
= 5 A
mho
pF
pF
pF
C
V
V
V
= 28 V
= 28 V
= 28 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
ISS
OSS
RSS
DS
DS
DS
C
C
47
3.6
DYNAMIC
Symbol
Parameter
= 250 mA
Min.
45
Typ.
Max.
Unit
W
P
V
V
V
V
= 28 V f = 945 MHz
I
DQ
OUT
DD
DD
DD
DD
G
= 28 V
= 28 V
= 28 V
f = 945 MHz
f = 945 MHz
f = 945 MHz
P
P
P
= 45 W
= 45 W
= 45 W
I
DQ
= 250 mA
= 250 mA
= 250 mA
13
14.5
dB
%
PS
OUT
OUT
OUT
η
I
DQ
50
D
LOAD
Mismatch
I
DQ
10:1
VSWR
ALL PHASE ANGLES
D
PIN CONNECTION
SOURCE
DRAIN
Z
DL
Typical Input
Impedance
Typical Drain
Load Impedance
GATE
G
Zin
S
SC13140
SC15200
IMPEDANCE DATA
PD57045S
Zin
Ω
Zdl
Ω
Frequency
MHz
945
.80 + j 1.24
1.66 - j.44
2/8
PD57045 PD57045S
TYPICAL PERFORMANCE
Capacitance vs. Drain Voltage
Drain Current vs. Gate Voltage
1000
4
3.5
3
f=1MHz
Vds=10V
Ciss
100
2.5
2
Coss
1.5
1
10
Crss
0.5
0
1
0
10
20
30
40
50
2.5
3
3.5
4
4.5
5
VDS, DRAIN-SOURCE VOLTAGE (V)
VGS, GATE-SOURCE VOLTAGE (V)
Gate-Source Voltage vs. Case Temperature
1.04
1.02
ID =3A
I =2A
D
1
0.98
0.96
I
D
=1.5A
I
D
=1A
VDS=10V
I =.25A
D
-25
0
25
50
75
Tc, CASE TEMPERATURE (°C)
3/8
PD57045 PD57045S
TYPICAL PERFORMANCE - PD57045S
Output Power and Power Gain vs. Input Power
Power Gain vs. Output Power
17
60
50
40
30
20
10
0
16
15
14
13
12
11
10
Pout
Idq=450mA
Gp
16
Idq= 250mA
15
Idq=150mA
14
13
12
11
10
Idq=75mA
DD
V
I
=28V
Vdd= 28V
f=945Mhz
DQ=250mA
f=945MHz
0
0.5
1
1.5
2
2.5
3
3.5
0.1
1
10
100
Pin, INPUT POWER (W)
Pout, OUTPUT POWER (W)
Drain Efficiency vs. Output Power
Return Loss vs. Output Power
60
50
40
30
20
10
0
0
-10
-20
f=945MHz
Vdd=28V
Idq= 250mA
-30
f=945MHz
Vdd = 28V
Idq= 250mA
-40
0
10
20
30
40
50
60
0
10
20
30
40
50
60
Pout, OUTPUT POWER (W)
Pout, OUTPUT POWER (W)
Output Power vs. Bias Current
Drain Efficiency vs. Bias Current
60
70
50
40
30
20
60
50
40
30
Pin= 1.5 W
Vdd = 28V
f=945MHz
Pin=1.5W
Vdd = 28V
f=945MHz
0
200
400
600
800
1000
0
200
400
600
800
1000
Idq, BIAS CURRENT (mA)
Idq, BIAS CURRENT (mA)
4/8
PD57045 PD57045S
TYPICAL PERFORMANCE PD57045S
Output Power vs. Drain Voltage
Output Power vs. Gate Bias Voltage
80
50
40
30
20
10
0
Pin=3 W
70
60
50
40
30
20
10
f=945MHz
Vdd = 28V
Idq=250mA
Pin= 2W
Pin= 1.5W
Pin= 1W
Pin= 1.5W
Vdd= 28 V
f=945MHz
16
18
20
22
24
26
28
30
32
34
0
0.5
1
1.5
2
2.5
3
3.5
4
VDS, DRAIN-SOURCE VOLTAGE (V)
VGS, GATE BIAS VOLTAGE (V)
TEST CIRCUIT PHOTOMASTER
6.4 inches
5/8
PD57045 PD57045S
TEST CIRCUIT SCHEMATIC
TEST CIRCUIT COMPONENT PART LIST
INDUCTOR, 5TURNS AIR WOUND #22AWG,
ID=0.059{1.49}, NYLON COATED MAGNET WIRE
7.5pF ATC 100B SURFACE MOUNT CERAMIC CHIP
CAPACITOR
L1
C7
INDUCTOR, 5TURNS AIR WOUND #22AWG,
ID=0.059{1.49}, NYLON COATED MAGNET WIRE
7.5pF ATC 100B SURFACE MOUNT CERAMIC CHIP
CAPACITOR
L2
C8
FB1
FB2
SHIELD BEAD SURFACE MOUNT EMI
SHIELD BEAD SURFACE MOUNT EMI
C9
0.8-8.0pF GIGA TRIM VARIABLE CAPACITOR
47pF ATC 100B SURFACE MOUNT CERAMIC CHIP
CAPACITOR
C10
47pF ATC 100B SURFACE MOUNT CERAMIC CHIP
CAPACITOR
R1
R2
R3
C1
C2
C3
C4
C5
18K OHM, 1W SURFACE MOUNT CHIP RESISTOR
4.7M OHM, 1W SURFACE MOUNT CHIP RESISTOR
120 OHM,2W SURFACE MOUNT CHIP RESISTOR
C11
C12
C13
C14
C15
C16
C17
C18
1000pF ATC700B SURFACE MOUNT CERAMIC CHIP
CAPACITOR
0.1µF/500V SURFACE MOUNT CERAMIC CHIP
CAPACITOR
3pF ATC 100B SURFACE MOUNT CERAMIC CHIP
CAPACITOR
10µF/50V ALUMINNUM ELECTROLYTIC RADIAL LEAD
CAPACITOR
3pF ATC 100B SURFACE MOUNT CERAMIC CHIP
CAPACITOR
47pF ATC 100B SURFACE MOUNT CERAMIC CHIP
CAPACITOR
47pF ATC 100B SURFACE MOUNT CERAMIC CHIP
CAPACITOR
100pF ATC 100B SURFACE MOUNT CERAMIC CHIP
CAPACITOR
0.1µF/500V SURFACE MOUNT CERAMIC CHIP
CAPACITOR
0.8-8.0pF GIGA TRIM VARIABLE CAPACITOR
7.5pF ATC 100B SURFACE MOUNT CERAMIC CHIP
CAPACITOR
220µF/63V ALUMINUM ELECTROLYTIC RADIAL LEAD
CAPACITOR
7.5pF ATC 100B SURFACE MOUNT CERAMIC CHIP
CAPACITOR
ROGER, ULTRA LAM 2000 THK 0.030” εr
Cu 2 SIDES
= 2.55 2oz ED
C6
Board
6/8
PD57045 PD57045S
PowerSO-10RF (Straight Lead) MECHANICAL DATA
PowerSO-10RF (Formed Lead) MECHANICAL DATA
7/8
PD57045 PD57045S
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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8/8
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