PD85035C [STMICROELECTRONICS]
RF power transistor - LdmoST family; RF功率晶体管 - LDMOST家庭
| 型号： | PD85035C |
| 厂家： | 
ST |
| 描述： | RF power transistor - LdmoST family |
| 文件： | 总10页 (文件大小：243K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD85035C
RF power transistor - LdmoST family
Preliminary Data
Features
■ Excellent thermal stability
■ Common source configuration
■ P
= 35 W with 14.5 dB gain @ 945 MHz /
OUT
13.6 V
■ BeO-free ceramic package
■ ESD protection
M243
Epoxy sealed
■ In compliance with the 2002/95/EC european
directive
Description
Figure 1.
Pin connection
The PD85035C is a common source
N-channel, enhancement-mode lateral Field-
Effect RF power transistor. It is designed for high
gain, broadband commercial and industrial
applications. It operates at 13.6 V in common
source mode at frequencies of up to 1 GHz.
PD85035C boasts the excellent gain, linearity and
reliability of ST’s latest LDMOS technology.
1
3
PD85035C’s superior linearity performance
makes it an ideal solution for car mobile radio.
2
1. Drain
2. Gate
3. Source
Table 1.
Device summary
Order code
Package
Packing
PD85035C
M243
Box
November 2007
Rev 1
1/10
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
www.st.com
10
Contents
PD85035C
Contents
1
Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.1
1.2
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
2.2
2.3
Static . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Dynamic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
ESD protection characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3
4
5
6
Impedance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Typical performance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
2/10
PD85035C
Electrical data
1
Electrical data
1.1
Maximum ratings
Table 2.
Symbol
V(BR)DSS
VGS
Absolute maximum ratings (T
= 25°C)
CASE
Parameter
Drain-source voltage
Value
Unit
40
-0.5 to +15
8
V
V
Gate-source voltage
Drain current
ID
A
PDISS
TJ
Power dissipation (@ TC = 70 °C)
Max. operating junction temperature
Storage temperature
108
W
°C
°C
200
TSTG
-65 to +150
1.2
Thermal data
Table 3.
Symbol
RthJC
Thermal data
Parameter
Value
Unit
Junction - case thermal resistance
1.2
°C/W
3/10
Electrical characteristics
PD85035C
2
Electrical characteristics
o
T
= +25 C
CASE
2.1
Static
Table 4.
Symbol
Static
Test conditions
Min
Typ
Max
Unit
IDSS
IGSS
VGS = 0 V
VGS = 20 V
VDS = 10 V
VDS = 25 V
VDS = 0 V
1
1
µA
µA
V
VGS(Q)
ID = TBD
TBD
0.64
76
VDS(ON) VGS = 10 V
ID = 3 A
0.7
V
CISS
COSS
CRSS
VGS = 0 V
VGS = 0 V
VGS = 0 V
VDS = 12.5 V
VDS = 12.5 V
VDS = 12.5 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
pF
pF
pF
45
1.4
2.2
Dynamic
Table 5.
Symbol
Dynamic
Test conditions
Min
Typ
Max
Unit
P3dB
GP
V
DD = 13.6 V, IDQ = 350 mA
f = 945 MHz
35
15
60
W
dB
%
VDD = 13.6 V, IDQ = 350 mA, POUT = 15W, f = 945 MHz
VDD = 13.6 V, IDQ = 350 mA, POUT = P3dB, f = 945 MHz
17.5
77
hD
Load
VDD = 17 V, IDQ = 350 mA, POUT = 50W, f = 945 MHz
20:1
VSWR
mismatch All phase angles
2.3
ESD protection characteristics
Table 6.
ESD protection characteristics
Test conditions
Class
Human body model
Machine model
2
M3
4/10
PD85035C
Impedance
3
Impedance
Figure 2.
Current conventions
Table 7.
Impedance data
Freq. (MHz)
945 MHz
ZIN (Ω)
ZDL(Ω)
2.14 + j 2.17
1.08 +j 2.05
5/10
Typical performance
PD85035C
4
Typical performance
Figure 3.
Capacitances vs drain voltage
Figure 4.
ID vs VGS
160
Crss
Ciss
Coss
140
120
100
80
Freq = 1 MHz
60
40
20
0
0
10
20
30
40
50
Vdd (V)
Figure 5.
Threshold voltage
Figure 6.
DC output characteristic
6/10
PD85035C
Figure 7.
Typical performance
Gain vs output power and
bias current
Figure 8.
Pout and efficiency vs input power
24
22
20
18
16
14
12
50
45
40
35
30
25
20
15
10
5
100
150mA
Pout
Nd
250mA
350mA
500mA
90
80
70
60
50
40
30
20
10
0
Freq = 945 MHz
Vdd = 13.6V
Idq = 350mA
Freq = 945 MHz
Vdd = 13.6V
0
10
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
5
10 15 20 25 30 35 40 45 50
Pout (W)
Pin (W)
Figure 9.
Pout and drain current vs
supply voltage
Figure 10. Pout and drain current vs
gate voltage
60
50
40
30
20
10
6
5
4
3
2
1
0
50
5
4
3
2
1
0
Freq = 945 MHz
Pin = 0.4W
Vdd = 13.6V
Idq = 350mA
45
Pout
Id
40
35
30
25
20
15
10
5
Freq = 945 MHz
Pin = 1.2W
Idq = 350mA
Pout
Id
0
7
0
10
13
16
19
0
1
2
3
4
5
6
Vdd (V)
Vgs (V)
7/10
Package mechanical data
PD85035C
5
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
Table 8.
Dim.
M243 (.230 x .360 2L N/HERM W/FLG) mechanical data
mm
Inch
Min
Typ
Max
Min
Typ
Max
A
B
C
D
E
F
G
H
I
5.21
5.46
5.59
5.72
6.48
6.10
0.205
0.215
0.220
0.225
0.255
0.240
14.27
0.562
20.07
8.89
0.10
3.18
1.83
1.27
20.57
9.40
0.15
4.45
2.24
1.78
0.790
0.350
0.004
0.125
0.072
0.050
0.810
0.370
0.006
0.175
0.088
0.070
J
Figure 11. Package dimensions
Controlling dimension: Inches
1022142E
8/10
PD85035C
Revision history
6
Revision history
Table 9.
Date
16-Nov-2007
Document revision history
Revision
Changes
1
Initial release.
9/10
PD85035C
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10/10
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