PN2222A [STMICROELECTRONICS]
SMALL SIGNAL NPN TRANSISTOR; 小信号NPN晶体管
| 型号： | PN2222A |
| 厂家： | 
ST |
| 描述： | SMALL SIGNAL NPN TRANSISTOR |
| 文件： | 总6页 (文件大小：68K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PN2222A
®
SMALL SIGNAL NPN TRANSISTOR
PRELIMINARY DATA
Ordering Code Marking
Package / Shipment
PN2222A
PN2222A TO-92 / Bulk
PN2222A TO-92 / Ammopack
PN2222A-AP
■
■
■
SILICON EPITAXIAL PLANAR NPN
TRANSISTOR
TO-92 PACKAGE SUITABLE FOR
THROUGH-HOLE PCB ASSEMBLY
THE PNP COMPLEMENTARY TYPE IS
PN2907A
TO-92
Bulk
TO-92
Ammopack
APPLICATIONS
■
WELL SUITABLE FOR TV AND HOME
APPLIANCE EQUIPMENT
■
SMALL LOAD SWITCH TRANSISTOR WITH
HIGH GAIN AND LOW SATURATION
VOLTAGE
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Value
Unit
Collector-Emitter Voltage (IE = 0)
Collector-Emitter Voltage (IB = 0)
Emitter-Base Voltage (IC = 0)
Collector Current
75
40
V
V
6
V
0.6
A
ICM
Collector Peak Current (tp < 5 ms)
0.8
A
o
Ptot
Total Dissipation at Tamb = 25 C
500
mW
oC
oC
Tstg
Storage Temperature
-65 to 150
150
Tj
Max. Operating Junction Temperature
1/6
February 2003
PN2222A
THERMAL DATA
Rthj-amb
Rthj-case
•
•
Thermal Resistance Junction-Ambient
Thermal Resistance Junction-Case
Max
Max
250
83.3
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
VCE = 60 V
Min.
Typ.
Max.
Unit
ICEX
Collector Cut-off
10
nA
Current (VBE = -3 V)
IBEX
ICBO
Base Cut-off Current
(VBE = -3 V)
VCE = 60 V
VCB = 75 V
20
nA
Collector Cut-off
Current (IE = 0)
10
10
nA
µA
o
V
CB = 75 V
Tj = 150 C
IEBO
Emitter Cut-off Current VEB = 3 V
(IC = 0)
15
nA
V(BR)CEO Collector-Emitter
Breakdown Voltage
(IB = 0)
IC = 10 mA
IC = 10 µA
IE = 10 µA
40
75
6
V
V(BR)CBO Collector-Base
Breakdown Voltage
(IE = 0)
V
V
V(BR)EBO Emitter-Base
Breakdown Voltage
(IC = 0)
VCE(sat)
VBE(sat)
hFE
Collector-Emitter
Saturation Voltage
IC = 150 mA IB = 15 mA
IC = 500 mA IB = 50 mA
0.3
1
V
V
Collector-Base
Saturation Voltage
IC = 150 mA IB = 15 mA
IC = 500 mA IB = 50 mA
0.6
1.2
2
V
V
DC Current Gain
IC = 0.1 mA VCE = 10 V
35
50
75
IC = 1 mA
IC = 10 mA
VCE = 10 V
VCE = 10 V
IC = 150 mA VCE = 10 V
IC = 150 mA VCE = 1 V
IC = 500 mA VCE = 10 V
100
50
40
300
fT
Transition Frequency
IC = 20 mA VCE = 20V f = 100MHz
270
4
MHz
pF
CCBO
Collector-Base
Capacitance
IE = 0
VCB = 10 V f = 1 MHz
8
CEBO
NF
Emitter-Base
Capacitance
IC = 0 VEB = 0.5 V f = 1MHz
20
4
25
pF
dB
Noise Figure
IC = 0.1 mA VCE = 10 V f = 1 KHz
∆f = 200 Hz RG = 1 KΩ
hie
Input Impedance
VCE = 10 V IC = 1 mA
VCE = 10 V IC = 10 mA f = 1 KHz
f = 1 KHz
2
0.25
8
1.25
KΩ
KΩ
hre
Reverse Voltage Ratio VCE = 10 V IC = 1 mA f = 1 KHz
VCE = 10 V IC = 10 mA f = 1 KHz
8
4
10-4
10-4
hfe
Small Signal Current
Gain
VCE = 10 V IC = 1 mA
VCE = 10 V IC = 10 mA f = 1 KHz
f = 1 KHz
50
75
300
375
hoe
Output Admittance
VCE = 10 V IC = 1 mA f = 1 KHz
VCE = 10 V IC = 10 mA f = 1 KHz
5
25
35
200
µS
µS
Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 %
2/6
PN2222A
ELECTRICAL CHARACTERISTICS (Continued)
Symbol
Parameter
Delay Time
Test Conditions
IC = 150 mA IB = 15 mA
VCC = 30 V
Min.
Typ.
5
Max.
Unit
ns
td
tr
ts
tf
10
25
Rise Time
Storage Time
Fall Time
12
ns
IC = 150 mA IB1 = - IB2 = 15 mA
VCC = 30 V
185
24
225
60
ns
ns
Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 %
3/6
PN2222A
TO-92 MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
4.32
TYP.
MAX.
4.95
MIN.
0.170
0.014
0.175
0.130
0.095
0.045
0.500
0.085
0.045
0.016
4 degree
MAX.
0.195
0.020
0.194
0.155
0.105
0.055
0.609
0.094
0.059
0.022
6 degree
A
b
0.36
0.51
D
E
4.45
4.95
3.30
3.94
e
2.41
2.67
e1
L
1.14
1.40
12.70
2.16
15.49
2.41
R
S1
W
V
1.14
1.52
0.41
0.56
4 degree
6 degree
4/6
PN2222A
TO-92 AMMOPACK SHIPMENT (Suffix"-AP") MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
TYP.
MAX.
4.80
MIN.
MAX.
0.189
0.150
0.063
0.091
0.019
0.508
0.278
0.116
0.079
0.748
0.248
0.364
0.020
0.807
0.650
0.984
0.165
0.035
0.433
A1
T
3.80
T1
1.60
2.30
0.48
T2
d
P0
12.50
5.65
12.70
6.35
2.54
12.90
7.05
0.492
0.222
0.096
-0.079
0.689
0.224
0.335
0.500
0.250
0.100
P2
F1,F2
delta H
W
2.44
2.94
2.00
-2.00
17.50
5.70
18.00
6.00
9.00
19.00
6.30
0.709
0.236
0.354
W0
W1
W2
H
8.50
9.25
0.50
18.50
15.50
20.50
16.50
25.00
4.20
0.728
0.610
H0
H1
D0
t
16.00
4.00
0.630
0.157
3.80
0.150
0.90
L
11.00
I1
3.00
0.118
delta P
-1.00
1.00
-0.039
0.039
5/6
PN2222A
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
© 2003 STMicroelectronics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
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http://www.st.com
6/6
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