RBO40-40M-TR [STMICROELECTRONICS]
SILICON SURGE PROTECTOR, POWER, SOP-10;
| 型号： | RBO40-40M-TR |
| 厂家： | 
ST |
| 描述： | SILICON SURGE PROTECTOR, POWER, SOP-10 |
| 文件： | 总15页 (文件大小：167K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RBO40-40G/M/T
REVERSED BATTERYAND
OVERVOLTAGEPROTECTIONCIRCUIT (RBO)
Application Specific Discretes
TM
A.S.D.
FEATURES
PROTECTION AGAINST”LOADDUMP” PULSE
40A DIODE TO GUARD AGAINST BATTERY
REVERSAL
MONOLITHIC STRUCTURE FOR GREATER
RELIABILITY
BREAKDOWN VOLTAGE : 24 V min.
CLAMPINGVOLTAGE : ± 40 V max.
COMPLIANT WITH ISO / DTR 7637
D2PAK
RBO40-40G
DESCRIPTION
Designed to protect against batteryreversal and
load dump overvoltagesin automotiveapplica-
tions, this monolithic component offers multiple
functionsin the same package:
PowerSO-10TM
RBO40-40M
D1 : reversed battery protection
T1 : clamping against negative overvoltages
T2 : Transil functionagainst ”load dump” effect.
TO220AB
RBO40-40T
FUNCTIONAL DIAGRAM
3
1
2
January 1997 - Ed : 3
1/15
RBO40-40G / RBO40-40M / RBO40-40T
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
IFSM
Non repetitivesurge peak forward current
(Diode D1)
tp = 10 ms
120
A
IF
DC forward current (Diode D1)
Tc = 75°C
40
80
A
V
VPP
Peak load dump voltage (see note 1and 2)
5 pulses(1 minute between each pulse)
PPP
Peak pulse power between Input and Output
10/1000µs
1500
W
°C
°C
(Transil T1)
Tj initial= 25°C
Tstg
Tj
Storage temperature range
Maximum junction temperature
- 40 to + 150
150
TL
Maximum lead temperaturefor solderingduring 10 s
at 4.5mm from case for TO220AB
260
Note 1 : for a surge greater than the maximum value, the device will fail in short-circuit.
Note 2 : see Load Dump curves.
TM : PowerSO-10,TRANSIL and ASD are trademarks of SGS-THOMSON Microelectronics.
THERMAL RESISTANCE
Symbol
Parameter
Value
Unit
Junctionto case
Rth (j-c)
RBO40-40M
RBO40-40G
RBO40-40T
1.0
1.0
1.0
°C/W
Rth (j-a)
Junctionto ambient
RBO40-40T
60
°C/W
D1
I32
I13
1
3
I
32
pp
IF
T2
T1
IR32
R M32
2
I
V
31 V 31
V
R M
31
CL
BR
V32
V13
VRM 32 VBR 32 VC L32
VF13
31
I
RM
I
R
31
3
1
Ipp31
2
Ex : V 13 . between Pin 1 and Pin 3
V
BR
32 . between Pin 3 and Pin 2
F
2/15
RBO40-40G / RBO40-40M / RBO40-40T
Symbol
Parameter
VRM31/VRM32 Stand-offvoltage Transil T1 / Transil T2.
VBR31/VBR32 Breakdown voltage Transil T1 / TransilT2.
IR31/IR32
Leakage current Transil T1 / TransilT2.
VCL31/VCL32 Clamping voltage Transil T1 / Transil T2.
Forward voltage drop Diode D1.
Peak pulse current.
VF13
IPP
αT
Temperaturecoefficientof VBR.
C31/C32
C13
CapacitanceTransil T1 / Transil T2.
Capacitanceof Diode D1
ELECTRICAL CHARACTERISTICS: DIODE D1 (- 40°C< Tamb < + 85°C)
Value
Symbol
Test Conditions
Unit
Min. Typ. Max.
VF 13
VF 13
VF 13
VF 13
C13
IF = 40 A
1.9
1.45
V
V
IF = 20A
IF = 1 A
1
V
IF = 100mA
F = 1MHz VR= 0 V
0.95
V
3000
pF
ELECTRICAL CHARACTERISTICS : TRANSIL T1 (- 40°C < Tamb < + 85°C)
Value
Symbol
Test Conditions
Unit
Min. Typ. Max.
VBR 31
VBR 31
IRM 31
IRM 31
VCL 31
α T
IR = 1 mA
22
24
35
32
100
10
40
9
V
V
IR = 1 mA, Tamb = 25°C
VRM = 20 V
µA
VRM = 20 V, Tamb = 25°C
IPP =37.5A,Tj initial = 25°C
Temperaturecoefficient of VBR
µA
10/1000µs
V
10-4/°C
C 31
F = 1MHz
VR = 0 V
3000
pF
ELECTRICAL CHARACTERISTICS : TRANSIL T2 (- 40°C < Tamb < + 85°C)
Value
Symbol
Test Conditions
Unit
Min. Typ. Max.
VBR 32
VBR 32
IRM 32
IRM 32
VCL 32
α T
IR = 1 mA
22
24
35
32
100
10
40
9
V
V
IR = 1 mA, Tamb = 25°C
VRM = 20 V
µA
VRM = 20 V, Tamb = 25°C
IPP = 20 A (note1)
µA
V
Temperaturecoefficient of VBR
10-4/°C
C32
F = 1MHz
VR = 0 V
8000
pF
Note 1 : One pulse, see pulse definition in load dump testgenerator circuit.
3/15
RBO40-40G / RBO40-40M / RBO40-40T
PRODUCT DESCRIPTION
The RBO has 3 functionsintegratedon the same
chip.
3
1
D1 : “Diode function” in order to protect against
reversedbattery operation.
T2 : “Transil function” in order to protect against
positive surge generated by electric systems
(ignition, relay. ...).
T1 : Protectionfor motor drive application
(See below).
2
BASIC APPLICATION
* The monolithic multi-function protection
(RBO) has been developed to protect
sensitive semiconductors in car electronic
modules against both overvoltage and
battery reverse.
* In addition, the RBO circuit prevents
overvoltages generated by the module from
affecting the car supply network.
MOTOR DRIVER APPLICATION
BATTERY
D1
Filter
T2
MOTOR
T1
RBO
DEVICE
MOTOR CONTROL
In this application, one half of the motor drive circuit is suppliedthroughthe “RBO” and is thusprotected
as per its basic function application.
The secondpart is connecteddirectly to the “car supply network” and is protectedas follows :
- For positive surges : T2 (clamping phase) and D1 in forward-biased.
- For negative surges : T1 (clamping phase) and T2 in forward-biased.
4/15
RBO40-40G / RBO40-40M / RBO40-40T
PINOUT configuration in D2PAK :
- Input (1) : Pin 1
- Output (3) : Pin 3
D1
- Gnd
(2) : Connectedto base Tab
T2
T1
TAB
Marking
: Logo, date code, RBO40-40G
PINOUT configuration in PowerSO-10 :
- Input (1) : Pin 1 to 5
- Output (3) : Pin 6 to 10
- Gnd
(2) : Connectedto base Tab
Pin 1
D1
Input (1)
Output (3)
Marking
: Logo, date code, RBO40-40M
T2
T1
Gnd (2)
Pin 6
Tab
TOP VIEW
PINOUT configuration in TO220AB :
- Input (1) : Pin 1
- Output (3) : Pin 3
D1
T1
- GND
(2) : Connectedto base Tab
T2
Marking
: Logo, date code, RBO40-40T
(TAB)
5/15
RBO40-40G / RBO40-40M / RBO40-40T
LOAD DUMP TEST GENERATOR CIRCUIT (SCHAFFNER NSG 506 C). Issued from ISO / DTR 7637.
Open circuit (voltage curve)
Corresponding current wave with D.U.T.
(pulse test n°5)
I
t
U(V)
Ipp
Ipp/2
0
tr
offset
10% / 13.5V
90%
Vs
10%
Vbat
0
t
t
tp = 40ms
Impulse
N°5
Vs (V)
66.5
13.5
2
Vbat (V)
Ri (Ω)
t (ms)
200 (*)
<10
5
tr (ms)
Number
60s between each pulse
(*) Generator setting
CALIBRATION METHOD FOR SCHAFFNER NSG 506 C
1) With open circuit (generatoris in open circuit):
- calibrate Vs
2) With short circuit (generator is in short circuit):
- calibrate Ri (Ri = 2Ω)
3) With D.U.T.
- calibratetp (tp = 40ms @ Ipp/2)
Typical Voltage curve (open circuit)
Typical Voltage and Current curve with D.U.T.
typ. Vpp
typ. VCL
20ms/div.
5.0V/div.
Ipp
VBat
20ms/div.
10.0V/div.
20ms/div.
3A/div.
6/15
RBO40-40G / RBO40-40M / RBO40-40T
Fig. 1 : Peak pulse power versus exponential
pulse duration (Tj initial = 85°C).
Fig. 2-1 : Clamping voltage versus peak pulse
current (Tj initial = 85°C).
Exponential waveform tp = 40 ms and tp = 1 ms
(TRANSIL T2).
VCL(V)
Ppp(kW)
45.0
10.0
5.0
42.5
40.0
Transil T2
2.0
1.0
0.5
tp = 40ms
37.5
Transil T1
tp = 1ms
35.0
0.2
0.1
32.5
tp(ms)
10
Ipp(A)
30.0
1
2
5
20
50
100
0.2
0.5
1
2
5
10 20
50 100
0.1
Fig. 2-2 : Clamping voltage versus peak pulse
current (Tj initial = 85°C).
Fig. 3 : Relative variation of peak pulse power
versus junction temperature.
Exponential waveform tp = 1 ms and tp = 20 µs
(TRANSIL T1).
Ppp[Tj]/Ppp[Tj initial=85 °C]
VCL(V)
1.20
55
50
45
1.00
0.80
0.60
0.40
p = 1ms
t
40
35
30
25
tp = 20µs
0.20
Tj initial (°C)
A)
p
Ip (
0.00
1
2
5
10
20
50 100 200
500
25
50
75
100
125
150
175
0
7/15
RBO40-40G / RBO40-40M / RBO40-40T
Fig. 4 :
Fig. 5-1 :
Relative variation of thermal impedance
Peak forward voltage drop versus peak
junction to case versus pulse duration.
forward current (typical values) - (TRANSIL T2).
Zth(j-c)/Rth(j-c)
V
FM(V)
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
1.0
0.5
0.2
Tj = 25°C
Tj = 150°C°
IFM(A)
tp (s)
0.1
5
1E-3
1E-2
1E-1
1E+0
1E+1
0.1 0.2
0.5
1
2
10
20
50 100
Fig. 6 : Relative variation of leakage current
versus junction temperature.
Fig. 5-2 :
Peak forward voltage drop versus peak
forward current (typical values) - (DIODED1).
V
FM(V)
3.5
3.0
2.5
2.0
1.5
1.0
0.5
Tj = 25°C
Tj = 150°C°
IFM(A)
0.2
0.5
1
2
5
10 20
50 100
0.1
ORDERING INFORMATION
RBO
40
-
40
M
Package :
Reversed Battery &
Overvoltage protection
M = PowerSO-10
G = D2PAK
T = TO220AB
IF(AV) = 40 A
VCL = 40V
8/15
RBO40-40G / RBO40-40M / RBO40-40T
DIMENSIONS
PACKAGE MECHANICAL DATA
D2PAK Plastic
REF.
Millimeters
Inches
A
Min. Typ. Max. Min. Typ. Max.
E
C2
A
4.30
4.60 0.169
2.69 0.098
0.23 0.001
0.93 0.027
0.181
0.106
0.009
0.037
L2
A1 2.49
A2 0.03
D
B
B2
C
0.70
L
1.40
0.055
L3
0.45
0.60 0.017
1.36 0.047
9.35 0.352
10.28 0.393
5.28 0.192
15.85 0.590
1.40 0.050
1.75 0.055
0.024
0.054
0.368
0.405
0.208
0.624
0.055
0.069
A1
C2 1.21
D
E
G
L
8.95
10.00
4.88
B2
B
R
C
G
15.00
A2
L2 1.27
L3 1.40
R
2.0 MIN.
FLAT ZONE
0.40
0.016
V2
V2
0°
8°
0°
8°
FOOT-PRINT D2PAK
16.90
10.30
5.08
1.30
3.70
8.90
9/15
RBO40-40G / RBO40-40M / RBO40-40T
SOLDERING RECOMMENDATION
- thermal capacity of the base substrate
Voids pose a difficult reliability problem for large
surface mount devices. Such voids under the
package result in poor thermal contact and the
high thermal resistance leads to component
failures. The PowerSO-10 is designed from
scratch to be solely a surface mount package,
hence symmetry in the x- and y-axis gives the
package excellent weight balance. Moreover, the
PowerSO-10offers the uniquepossibility to control
easily the flatness and quality of the soldering
process. Both the top and the bottom soldered
edges of the package are accessible for visual
inspection (soldering meniscus).
The soldering process causes considerable
thermal stress to a semiconductor component.
This has to be minimized to assure a reliable and
extended lifetime of the device. The PowerSO-10
package can be exposed to
a maximum
temperature of 260°C for 10 seconds. However a
proper soldering of the package could be done at
215°C for 3 seconds. Any solder temperature
profile should be within these limits. As reflow
techniquesaremost common in surfacemounting,
typical heating profiles are given in Figure 1,either
for mounting on FR4 or on metal-backed boards.
For each particular board, the appropriate heat
profile has to be adjusted experimentally. The
present proposal is just a starting point. In any
case, the following precautions have to be
considered :
Coplanarity between the substrate and the
package can be easily verified. The quality of the
solder joints is very important for two reasons : (I)
poor quality solder joints result directly in poor
reliability
and (II) solder thickness affects the
- always preheat the device
thermal resistance significantly. Thus a tight
control of this parameter results in thermally
efficient and reliable solder joints.
- peak temperatureshould be at least30 °C
higherthan the melting point of the solder
alloy chosen
Fig. 1 : Typical reflow soldering heat profile
Temperature (o C)
250
245oC
215oC
200
Soldering
Epoxy FR4
150
100
50
board
Preheating
Cooling
Metal-backed
board
0
0
40
80
120 160 200 240 280 320 360
Time (s)
10/15
RBO40-40G / RBO40-40M / RBO40-40T
SUBSTRATES AND MOUNTINGINFORMATION
decrease thermal resistance accordingly. Using
a configurationwith 16 holesunder the spreaderof
the package with a pitch of 1.8 mm and a diameter
of 0.7 mm, the thermal resistance (junction -
heatsink) can be reduced to 12°C/W (see fig. 3).
Beside the thermal advantage, this solution allows
multi-layer boards to be used. However, a
drawback of this traditional material prevents its
use in very high power, high current circuits. For
instance, it is not advisable to surface mount
devices with currents greater than 10 A on FR4
boards. A Power Mosfet or Schottky diode in a
surface mount power packagecan handle up to
around 50 A if better substratesare used.
The use of epoxy FR4 boards is quite common for
surface mounting techniques, however, their poor
thermal conduction compromises the otherwise
outstanding thermal performance of the
PowerSO-10. Some methods to overcome this
limitation are discussedbelow.
One possibility to improve the thermal conduction
is the use of large heat spreader areas at the
copper layer of the PC board. This leads to a
reduction of thermal resistance to 35 °C for 6 cm2
of the board heatsink (see fig. 2).
Use of copper-filledthrough holes on conventional
FR4 techniqueswill increase the metallization and
Fig. 2 :
Mountingon epoxy FR4 head dissipation by extending the area of the copper layer
Copper foil
FR4 board
Fig. 3 :
Mounting on epoxy FR4 by using copper-filled through holes for heat transfer
Copper foil
FR4 board
heatsink
heat transfer
11/15
RBO40-40G / RBO40-40M / RBO40-40T
A new technology available today is IMS - an
Insulated Metallic Substrate. This offers greatly
enhanced thermal characteristics for surface
mount components. IMS is a substrate consisting
of threedifferent layers, (I) the basematerialwhich
is available as an aluminium or a copper plate, (II)
a thermal conductive dielectrical layer and (III) a
copper foil, which can be etched as a circuit layer.
Using this material a thermal resistance of 8°C/W
with 40 cm2 of board floating in air is achievable
(see fig. 4). If evenhigherpower is to be dissipated
an externalheatsink could be applied which leads
to an Rth(j-a) of 3.5°C/W (see Fig. 5), assuming
that Rth (heatsink-air) is equal to Rth
(junction-heatsink). This is commonly applied in
practice, leading to reasonable heatsink
dimensions. Often power devices are defined by
considering the maximum junction temperature of
the device. In practice , however, this is far from
being exploited. A summary of various power
managementcapabilities is made in table 1 based
on a reasonabledelta T of 70°C junction to air.
The PowerSO-10 concept also represents an
attractive alternative to C.O.B. techniques.
PowerSO-10 offers devices fully tested at low
and high temperature. Mounting is simple - only
conventional SMT is required - enabling the users
to getrid ofbond wire problemsand the problem to
control the high temperaturesoft soldering as well.
An optimized thermal management is guaranteed
through PowerSO-10 as the power chips must in
any case be mounted on heat spreaders before
being mounted onto the substrate.
Fig. 4 : Mountingon metal backed board
Fig. 5 :
externalheatsink applied
Mounting on metal backed board with an
Copperfoil
FR4 board
Copper foil
Insulation
Aluminium
Aluminium
heatsink
TABLE 1
PowerSo-10package mounted on
1.FR4 using the recommendedpad-layout
2.FR4 with heatsink on board (6cm2)
Rth (j-a)
50 °C/W
35 °C/W
12 °C/W
8 °C/W
P Diss
1.5 W
2.0 W
5.8 W
8.8 W
20 W
3.FR4 with copper-filled through holes and external heatsink applied
4. IMS floating in air (40 cm2)
5. IMS with external heatsink applied
3.5 °C/W
12/15
RBO40-40G / RBO40-40M / RBO40-40T
PACKAGE MECHANICAL DATA
B
0.10A B
10
6
E3 E1
E2
H
E
1
5
SEATING
PLANE
A
e
B
DETAIL ”A”
C
0.25 M
Q
D
h
F
D1
A
SEATING
PLANE
A1
A1
L
DETAIL ”A”
a
E4
DIMENSIONS
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
DIMENSIONS
REF.
Millimeters
Inches
REF.
Min. Typ. Max. Min. Typ. Max.
A
3.35
3.65 0.131
0.10 0.00
0.60 0.0157
0.55 0.0137
9.60 0.370
7.60 0.291
9.50 0.366
7.40 0.283
7.60 0.283
0.143
E3 6.10
E4 5.90
e
6.35 0.240
6.10 0.232
0.250
0.240
A1 0.00
0.0039
0.0236
0.0217
0.378
0.299
0.374
0.291
0.299
B
C
D
0.40
0.35
9.40
1.27
0.05
F
H
h
1.25
1.35 0.0492
14.40 0.543
0.0531
0.567
13.80
D1 7.40
9.30
0.50
1.70
0.019
0.067
E
L
1.20
1.80 0.0472
0.0708
E1 7.20
E2 7.20
Q
a
0°
8°
0°
8°
13/15
RBO40-40G / RBO40-40M / RBO40-40T
FOOT PRINT
HEADER SHAPE
MOUNTING PAD LAYOUT
RECOMMENDED
Dimensions in millimeters
Dimensions in millimeters
SHIPPING TUBE
DIMENSIONS (mm)
TYP
C
B
A
18
12
0,8
532
B
C
Length tube
Quantity per tube
50
A
Surface mount film taping : contact sales office
14/15
RBO40-40G / RBO40-40M / RBO40-40T
DIMENSIONS
PACKAGE MECHANICAL DATA
TO220AB Plastic
REF.
Millimeters
Inches
Min.
Min.
Max.
15.87
4.50
14.70
10.45
0.96
1.39
4.82
0.65
2.70
2.79
6.85
4.00
3.00
1.75
1.20
Max.
0.625
0.177
0.579
0.411
0.038
0.055
0.190
0.026
0.106
0.110
0.270
0.157
0.118
0.069
0.047
A
a1
a2
B
14.23
0.560
12.70
10.20
0.64
1.15
4.48
0.35
2.10
2.29
5.85
3.55
2.54
1.45
0.80
0.500
0.402
0.025
0.045
0.176
0.020
0.083
0.090
0.230
0.140
0.100
0.057
0.031
b1
b2
C
c1
c2
e
F
I
L
l2
l3
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No
license is grantedby implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics.Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSONMicroelectronics products are not authorized for use as criticalcomponents in life support devices or systems withoutexpress
written approval of SGS-THOMSON Microelectronics.
1997 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved.
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15/15
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