S1HNK60 [STMICROELECTRONICS]

N-CHANNEL 600V - 8W - 0.3A SO-8 SuperMESH-TMPower MOSFET; N沟道600V - 8W - 0.3A SO- 8超网， TMPower MOSFET


型号：	S1HNK60
厂家：	ST
描述：	N-CHANNEL 600V - 8W - 0.3A SO-8 SuperMESH-TMPower MOSFET N沟道600V - 8W - 0.3A SO- 8超网， TMPower MOSFET
文件：	总8页 (文件大小：303K)
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STS1HNK60

N-CHANNEL 600V - 8Ω - 0.3A SO-8

SuperMESH™Power MOSFET

TYPE

DSS

DS(on)

STS1HNK60

600 V

< 8.5 Ω

0.3 A

2 W

■

TYPICAL R (on) = 8 Ω

EXTREMELY HIGH dv/dt CAPABILITY

100% AVALANCHE TESTED

GATE CHARGE MINIMIZED

NEW HIGH VOLTAGE BENCHMARK

SO-8

DESCRIPTION

The SuperMESH™ series is obtained through an

extreme optimization of ST’s well established strip-

based PowerMESH™ layout. In addition to pushing

on-resistance significantly down, special care is tak-

en to ensure a very good dv/dt capability for the

most demanding applications. Such series comple-

ments ST full range of high voltage MOSFETs in-

cluding revolutionary MDmesh™ products.

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

■

SWITCH MODE LOW POWER SUPPLIES

(SMPS)

LOW POWER, LOW COST CFL (COMPACT

FLUORESCENT LAMPS)

LOW POWER BATTERY CHARGERS

ORDERING INFORMATION

SALES TYPE

MARKING

PACKAGE

SO-8

PACKAGING

STS1HNK60

S1HNK60

TAPE & REEL

August 2003

1/8

STS1HNK60

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

600

± 30

0.3

Unit

Drain-source Voltage (V = 0)

Drain-gate Voltage (R = 20 kΩ)

DGR

Gate- source Voltage

Drain Current (continuous) at T = 25°C

Drain Current (continuous) at T = 100°C

0.19

1.2

( )

Drain Current (pulsed)

TOT

Total Dissipation at T = 25°C

Derating Factor

0.016

W/°C

V/ns

dv/dt (1)

Peak Diode Recovery voltage slope

stg

Operating Junction Temperature

Storage Temperature

-65 to 150

°C

( ) Pulse width limited by safe operating area

(1) I ≤0.3A, di/dt ≤100A/µs, V ≤ V

, T ≤ T

j JMAX.

(BR)DSS

THERMAL DATA

Rthj-amb

Thermal Resistance Junction-ambient Max

62.5

°C/W

ELECTRICAL CHARACTERISTICS (T

=25°C UNLESS OTHERWISE SPECIFIED)

CASE

ON/OFF

Symbol

Parameter

Drain-source

Test Conditions

Min.

Typ.

Max.

Unit

= 1 mA, V = 0

600

(BR)DSS

Breakdown Voltage

Zero Gate Voltage

= Max Rating

= Max Rating, T = 125 °C

µA

DSS

Drain Current (V = 0)

Gate-body Leakage

= ± 30 V

±100

GSS

Current (V = 0)

= V , I = 250 µA

2.25

Gate Threshold Voltage

3.7

8.5

GS(th)

Static Drain-source On

Resistance

= 10 V, I = 0.5 A

Ω

DS(on)

2/8

STS1HNK60

ELECTRICAL CHARACTERISTICS (CONTINUED)

DYNAMIC

Symbol

Parameter

Test Conditions

x R

DS(on)max,

Min.

Typ.

Max.

Unit

(1)

Forward Transconductance

> I

D(on)

= 0.5 A

Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

= 25V, f = 1 MHz, V = 0

156

23.5

3.8

iss

oss

rss

SWITCHING ON

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Turn-on Delay Time

Rise Time

= 300 V, I = 0.5 A

= 4.7Ω V = 10 V

6.5

d(on)

(Resistive Load see, Figure 3)

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

= 480 V, I = 1 A,

1.1

3.4

= 10V, R = 4.7Ω

SWITCHING OFF

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Turn-off Delay Time

Fall Time

= 300 V, I = 0.5 A

d(off)

R = 4.7Ω V = 10 V

G GS

(Resistive Load see, Figure 3)

Off-voltage Rise Time

Fall Time

Cross-over Time

= 480V, I = 1.0 A,

r(Voff)

R = 4.7Ω, V = 10V

G GS

(Inductive Load see, Figure 5)

SOURCE DRAIN DIODE

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

0.3

1.2

Source-drain Current

Source-drain Current (pulsed)

(2)

SDM

(1)

= 0.3 A, V = 0

Forward On Voltage

1.6

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Current

= 0.3 A, di/dt = 100 A/µs

= 25 V, T = 150°C

DD j

229

377

3.3

µC

RRM

(see test circuit, Figure 5)

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

2. Pulse width limited by safe operating area.

3/8

STS1HNK60

Safe Operating Area

Thermal Impedance

Output Characteristics

Transfer Characteristics

Transconductance

Static Drain-source On Resistance

4/8

STS1HNK60

Gate Charge vs Gate-source Voltage

Capacitance Variations

Normalized Gate Threshold Voltage vs Temp.

Normalized On Resistance vs Temperature

Source-drain Diode Forward Characteristics

Normalized BVDSS vs Temperature

5/8

STS1HNK60

Fig. 1: Unclamped Inductive Load Test Circuit

Fig. 2: Unclamped Inductive Waveform

Fig. 3: Switching Times Test Circuit For

Fig. 4: Gate Charge test Circuit

Resistive Load

Fig. 5: Test Circuit For Inductive Load Switching

And Diode Recovery Times

6/8

STS1HNK60

SO-8 MECHANICAL DATA

inch

TYP.

DIM.

MIN.

TYP.

MAX.

1.75

0.25

1.65

0.85

0.48

0.25

0.5

MIN.

MAX.

0.068

0.009

0.064

0.033

0.018

0.010

0.019

0.1

0.003

0.65

0.35

0.19

0.25

0.025

0.013

0.007

0.010

45 (typ.)

4.8

5.8

5.0

6.2

0.188

0.228

0.196

0.244

1.27

3.81

0.050

0.150

3.8

0.4

4.0

1.27

0.6

0.14

0.157

0.050

0.023

0.015

8 (max.)

0016023

7/8

STS1HNK60

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the

consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from

its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications

mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information

previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or

systems without express written approval of STMicroelectronics.

STMicroelectronics GROUP OF COMPANIES

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8/8

S1HNK60 [STMICROELECTRONICS]

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