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S1NK60Z [STMICROELECTRONICS]

N-CHANNEL 600V - 13W - 0.25A - SO-8 Zener-Protected SuperMESH⑩ Power MOSFET; N沟道600V - 13W - 0.25A - SO- 8齐纳保护SuperMESH⑩功率MOSFET
S1NK60Z
元器件型号： S1NK60Z
生产厂家： STMICROELECTRONICS    STMICROELECTRONICS
描述和应用：

N-CHANNEL 600V - 13W - 0.25A - SO-8 Zener-Protected SuperMESH⑩ Power MOSFET
N沟道600V - 13W - 0.25A - SO- 8齐纳保护SuperMESH⑩功率MOSFET
PDF文件： 总8页 (文件大小：304K)
下载文档：  下载PDF数据表文档文件
型号参数：S1NK60Z参数
 查看货源

S-1P1-G

 PCB Terminal

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S1P2655A01

 LINEAR INTEGRATED CIRCUIT

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59 SAMSUNG

S1P2655A01-D0B0

 Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 7-Element, NPN, Silicon, DIP-16

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1 SAMSUNG

S1P2655A02

 LINEAR INTEGRATED CIRCUIT

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25 SAMSUNG

S1P2655A03

 LINEAR INTEGRATED CIRCUIT

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37 SAMSUNG

S1P2655A03-S0B0

 Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 7-Element, NPN, Silicon, SOP-16

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1 SAMSUNG

S1P2655A04

 LINEAR INTEGRATED CIRCUIT

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39 SAMSUNG

S1P2655A04-D0B0

 Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 7-Element, NPN, Silicon, DIP-16

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0 SAMSUNG

S1P2655A04-S0B0

 Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 7-Element, NPN, Silicon, SOP-16

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0 SAMSUNG

S1P2655A05

 LINEAR INTEGRATED CIRCUIT

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20 SAMSUNG

S1P2655A05-D0B0

 Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 7-Element, NPN, Silicon, DIP-16

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0 SAMSUNG

S1PA

 High Current Density Surface Mount Glass-Passivated Rectifiers

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20 VISHAY

S1PA

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10 VISHAY

S1PA

 Rectifier Diode, 1 Element, 1A, 50V V(RRM),

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1 VISHAY

S1PA-E3

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0 VISHAY
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