SD1460 [STMICROELECTRONICS]
RF & MICROWAVE TRANSISTORS FM BROADCAST APPLICATIONS; 射频与微波晶体管FM广播应用![SD1460](http://pdffile.icpdf.com/pdf1/p00076/img/icpdf/SD1460_398016_icpdf.jpg)
型号: | SD1460 |
厂家: | ![]() |
描述: | RF & MICROWAVE TRANSISTORS FM BROADCAST APPLICATIONS |
文件: | 总5页 (文件大小:69K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
![](http://public.icpdf.com/style/img/ads.jpg)
SD1460
RF & MICROWAVE TRANSISTORS
FM BROADCAST APPLICATIONS
.
.
.
.
.
.
108 MHz
28 VOLTS
EFFICIENCY 75%
COMMON EMITTER
GOLD METALLIZATION
POUT 150 W MIN. WITH 9.2 dB GAIN
=
.500 4LFL (M174)
epoxy sealed
ORDER CODE
SD1460
BRANDING
SD1460
PIN CONNECTION
DESCRIPTION
The SD1143 is a 28 V gold metallized epitaxial
silicon NPN planar transistor designed for VHF
FM broadcast transmitters. This device utilizes dif-
fused emitter resistors to achieve infinite VSWR
at rated operating conditions.
1. Collector
2. Emitter
3. Base
4. Emitter
°
= 25 C)
ABSOLUTE MAXIMUM RATINGS (T
case
Symbol
VCBO
VCEO
VCES
VEBO
IC
Parameter
Value
60
Unit
V
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Device Current
25
V
60
V
4.0
16
V
A
PDISS
TJ
Power Dissipation
230
+200
W
°
°
Junction Temperature
Storage Temperature
C
C
TSTG
65 to +150
−
THERMAL DATA
RTH(j-c)
Junction-Case Thermal Resistance
0.75
°C/W
1/5
November 1992
SD1460
°
= 25 C)
ELECTRICAL SPECIFICATIONS (T
case
STATIC
Value
Symbol
Test Conditions
Unit
Min. Typ.
Max.
—
BVCBO
BVCER
BVCEO
BVEBO
hFE
IC = 100mA
IC = 100mA
IC = 100mA
IE = 20mA
VCE = 5V
IE = 0mA
RBE = 10Ω
IB = 0mA
IC = 0mA
IC = 1A
60
55
25
4.0
20
—
—
—
—
—
V
V
—
—
V
—
V
150
—
DYNAMIC
Value
Symbol
Test Conditions
Unit
Min.
150
9.2
70
Typ. Max.
POUT
GP
f = 108 MHz
f = 108 MHz
f = 108 MHz
f = 1 MHz
PIN = 18 W
PIN = 18 W
PIN = 18 W
VCB = 28 V
VCE = 28 V
VCE = 28 V
VCE = 28 V
—
—
—
—
—
—
W
dB
%
η
c
—
COB
—
150
pF
TYPICAL PERFORMANCE
POWER OUTPUT vs POWER INPUT
SAFE OPERATING AREA
2/5
SD1460
IMPEDANCE DATA
TYPICAL COLLECTOR LOAD
IMPEDANCE
TYPICAL INPUT IMPEDANCE
3/5
SD1460
TEST CIRCUIT
L1
L2
L5
L6
L7
:
:
:
:
:
3 Turns, #16 AWG, .225” I.D.
C1, C2,
C3, C9 : 24 - 200pF Variable, Arco 425
#14 AWG, Length .335”, Height .400”
5 1/2 Turns, #16 AWG Enameled .270” I.D.
#14 AWG, Length .300”, Height .335”
3 Turns, #16 AWG, Length .300”, Height .335”
C4
:
:
:
:
:
:
:
:
:
470pF ATC 125 mil. Sq. Chip
470pF Unelco, 400 mil. Sq.
1000pF Unelco, 400 mil Sq.
50 - 380pF Variable, Arco 465
25 - 280pF Variable, Arco 464
C5
C6
C7
C8
RFC 1
RFC 2
:
:
VK200 19/4B (1 winding) Ferroxcube Choke
6 Turns, #16 AWG Enamel on T50-2 Torroid
C10
C11
C12
C13
.1 F 50V, Erie Disc
µ
.01 F 50V, Erie Disc
µ
Board Material: 3-M-K-6098 1/16” Thick
1000pF Unelco, 400 mil Sq.
100 F 35V, Sprague Electrolytic
µ
4/5
SD1460
PACKAGE MECHANICAL DATA
Ref.: Dwg. No.12-0174
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specificationsmentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronicsproductsare notauthorized foruse ascritical componentsin life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
5/5
相关型号:
![](http://pdffile.icpdf.com/pdf2/p00262/img/page/SD1098-03_1582552_files/SD1098-03_1582552_1.jpg)
SD1468-14
RF Power Bipolar Transistor, Ultra High Frequency Band, Silicon, NPN, 0.500 INCH, PLASTIC, M111, FM-6
MICROSEMI
![](http://pdffile.icpdf.com/pdf2/p00262/img/page/SD1098-03_1582552_files/SD1098-03_1582552_1.jpg)
SD1468-14E3
RF Power Bipolar Transistor, Ultra High Frequency Band, Silicon, NPN, 0.500 INCH, PLASTIC, M111, FM-6
MICROSEMI
![](http://pdffile.icpdf.com/pdf2/p00262/img/page/SD1098-03_1582552_files/SD1098-03_1582552_1.jpg)
SD1468E3
RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN, 0.500 INCH, PLASTIC, M111, FM-6
MICROSEMI
©2020 ICPDF网 联系我们和版权申明