SD1680 [STMICROELECTRONICS]
RF & MICROWAVE TRANSISTORS 800/900 MHz APPLICATIONS; 射频与微波晶体管800/900 MHz的应用
| 型号： | SD1680 |
| 厂家： | 
ST |
| 描述： | RF & MICROWAVE TRANSISTORS 800/900 MHz APPLICATIONS |
| 文件： | 总7页 (文件大小：100K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SD1680
RF & MICROWAVE TRANSISTORS
800/900 MHz APPLICATIONS
.
.
.
.
.
915 - 960 MHz
24 VOLTS
CLASS AB PUSH PULL
INTERNAL INPUT MATCHING
DESIGNED FOR HIGH POWER LINEAR
OPERATION
HIGH SATURATED POWER CAPABILITY
.
.
2 x .437 x .450 2LFL (M175)
GOLD METALLIZATION FOR HIGH
RELIABILITY
epoxy sealed
ORDER CODE
BRANDING
SD1680
.
DIFFUSED EMITTER BALLAST
RESISTORS
COMMON EMITTER CONFIGURATION
SD1680
.
.
POUT 100 W MIN. WITH 7.0 dB GAIN
=
PIN CONNECTION
DESCRIPTION
The SD1680 is a gold metallized epitaxial silicon
NPN planar transistor using diffused emitter ballast
resistors for high linearity Class AB operation in
cellular base station applications.
1. Collector
2. Base
3. Emitter
°
= 25 C)
ABSOLUTE MAXIMUM RATINGS (T
case
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Value
60
Unit
Collector-Base Voltage
V
V
Collector-Emitter Voltage
Emitter-Base Voltage
Device Current
30
3.0
V
25
A
PDISS
TJ
Power Dissipation
310
+200
W
°
Junction Temperature
Storage Temperature
C
C
°
TSTG
55 to +150
0.55
−
THERMAL DATA
RTH(j-c)
Junction-Case Thermal Resistance
°C/W
1/7
November 1992
SD1680
°
= 25 C)
ELECTRICAL SPECIFICATIONS (T
case
STATIC
Value
Symbol
Test Conditions
Unit
Min. Typ.
Max.
—
BVCBO
BVCEO
BVEBO
ICES
IC = 100mA
IC = 100mA
IE = 50mA
VCE = 28V
VCE = 5V
IE = 0mA
IB = 0mA
IC = 0mA
IE = 0mA
IC = 3A
60
30
3.0
—
—
—
—
—
—
V
V
—
—
V
10
70
mA
—
hFE
15
Tested Per Side
DYNAMIC
Value
Symbol
Test Conditions
Unit
Min.
Typ. Max.
POUT
GP*
*
f = 900 MHz
f = 900 MHz
f = 900 MHz
f = 900 MHz
f = 1 MHz
VCE = 24 V
VCE = 24 V
VCE = 24 V
VCE = 24 V
VCB = 28 V
ICQ = 2 x 300 mA 120
—
—
—
—
W
dB
dBc
%
ICQ = 2 x 300 mA
ICQ = 2 x 300 mA
ICQ = 2 x 300 mA
7.0
—
IMD**
−32
—
—
η
c
45
—
—
COB
—
100
pF
Note:
* @ 1 dB Compression
** P 100W PEP,
F
400KHz (2 tones)
=
∆
=
OU T
TYPICAL PERFORMANCE
POWER OUTPUT vs POWER INPUT
THERMAL RESISTANCE vs CASE
TEMPERATURE
2/7
SD1680
TYPICAL PERFORMANCE (cont’d)
BROADBAND POWER GAIN vs
FREQUENCY
COLLECTOR EFFICIENCY vs FREQUENCY
INTERMODULATION DISTORTION vs
POWER OUTPUT
3/7
SD1680
IMPEDANCE DATA
FREQ.
ZIN (Ω)*
4.8 + j 0.95
4.5 + j 0.0
4.3 − j 1.0
4.1 − j 1.9
ZCL (Ω)**
5.0 + j 0.9
4.6 + j 1.7
4.2 + j 2.6
3.8 + j 3.4
910 MHz
930 MHz
950 MHz
970 MHz
* Base to Base
** Collector to Collector
POUT = 100W
VCC = 24V
Normalized to 50 Ohms
4/7
SD1680
TEST CIRCUIT
L1, L18
L2, L17
L3, L16
L4, L15
L5
L6
L7
L8
L9, L10
L11
L12
L13
L14
L19
L20
L21, L22
:
:
:
:
:
:
:
:
:
:
:
:
:
:
:
:
Printed Line 50
Printed Line 26.7 10mm
Ω
B1, B2 : Coaxial Cable 25, 43mm
C1, C2 : 330pF, ATC 100B
Ω
Printed Line 60 10.5mm
Ω
Printed Line 50 43mm
Ω
C3
C4
C5
:
:
:
.8 - 8.0pF Johanson Gigatrim
2 x 3.6pF + 1.6pF ATC 100B
3.3pF ATC 100B + .8 - 8.0pF
Johanson Gigatrim
Printed Line 25 13.5mm
Ω
Printed Line 21 15mm
Ω
Printed Line 10.5Ω 12.5mm
Printed Line 8Ω 7.5mm
C6, C7 : 330pF, ATC 100B
Printed Line 50 10mm
Ω
C8
C9
C10
C11
C12
C13
:
:
:
:
:
:
120pF ATC 100B
1.5nF, ATC 100B
Printed Line 9.5 10.5mm
Ω
Printed Line 11 14.5mm
Ω
10nF + 47 F, 63V
µ
Printed Line 15.5 8.5mm
Ω
1.5nF, ATC 100B + 10nF
Printed Line 19 3.5mm
Ω
470pF + 1.5nF, ATC 100B + 100mF, 63V
.4 - 4pF Johanson Gigatrim
2 Turns, #16 AWG
2 Turns, #16 AWG
12 Turns, #22 AWG
Substrate: Teflon Glass, Er = 2.55, 30Mils Thick
5/7
SD1680
BIAS VOLTAGE SOURCE
C15
C16
C17
C18
:
:
:
:
10nF + 100nF + 10 F
10nF
µ
1
F
µ
1.2nF + 27nF + 10
F
µ
D1
D2
D3
:
:
:
AAY 49, Ge Diode Thermally Connected with Q3 Heatsink
1N 4005, SI Diode Thermally Connected with Q3 Heatsink
1N 4005, SI Diode Thermally Connected with RF Transistors Flange
L8, L9
Q3
:
:
Ferrite Choke
BDX 63B
R7
R8
:
:
470 , 1/2W
Ω
100 , Trimpot
Ω
6/7
SD1680
PACKAGE MECHANICAL DATA
Ref.: Dwg. No.12-0175
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specificationsmentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronicsproductsare notauthorized foruse ascritical componentsin life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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7/7
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