SD57030-01 [STMICROELECTRONICS]
RF POWER TRANSISTORS The LdmoSTFAMILY; RF功率晶体管的LdmoSTFAMILY
| 型号： | SD57030-01 |
| 厂家： | 
ST |
| 描述： | RF POWER TRANSISTORS The LdmoSTFAMILY |
| 文件： | 总7页 (文件大小：76K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SD57030-01
RF POWER TRANSISTORS
The LdmoST FAMILY
PRELIMINARY DATA
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
■
■
■
■
EXCELLENT THERMAL STABILITY
COMMON SOURCE CONFIGURATION
POUT = 30 W with 13 dB gain @ 945 MHz
BeO FREE PACKAGE
M250
epoxy sealed
DESCRIPTION
ORDER CODE
BRANDING
The SD57030-01 is a common source N-Channel
enhancement-modelateral Field-Effect RF power
transistor designed for broadband commercial
and industrial applications at frequencies up to
1.0 GHz. The SD57030-01 is designed for high
gain and broadband performance operating in
common source mode at 28V. It is ideal for base
stations applications requiring high linearity.
SD57030-01
XSD57030-01
PIN CONNECTION
1. Drain
2. Gate
3.Source
ABSOLUTE MAXIMUM RATINGS (Tcase = 25 oC)
Symbol
Parameter
Value
Unit
V(BR)DSS Drain Source Voltage
65
± 20
4
V
V
VGS
ID
Gate-Source Voltage
Drain Current
A
PDISS
Tj
Power Dissipation (@ Tc= 70oC)
Max. Operating Junction Temperature
Storage Temperature
74
W
oC
oC
200
TSTG
-65 to 150
THERMAL DATA
Rth(j-c)
Junction-Case Thermal Resistance
1.75
oC/W
1/7
January 2000
SD57030-01
ELECTRICAL SPECIFICATION (Tcase = 25 oC)
STATIC
Symbol
V(BR)DSS
IDSS
Parameter
IDS = 10 mA
VDS = 28 V
VDS = 0 V
ID = 50 mA
ID = 3 A
Min.
Typ.
Max.
Unit
V
65
VGS = 0V
VGS = 0V
VGS = 20V
VDS = 28V
1
1
µA
µA
V
IGSS
VGS(Q)
2.0
5.0
VDS(ON) VGS = 10V
1.3
1.8
58
V
gFS
CISS
COSS
CRSS
VDS = 10V
VGS = 0V
VGS = 0V
VGS = 0V
ID = 3 A
mho
pF
pF
pF
VDS = 28 V
VDS = 28 V
VDS = 28 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
34
2.4
DYNAMIC
Symbol
POUT
GPS
Parameter
Min.
30
Typ.
Max.
Unit
W
VDD = 28V
VDD = 28 V
VDD = 28 V
f = 945 MHz
IDQ = 50 mA
IDQ = 50 mA
IDQ = 50 mA
Pout = 30 W
Pout = 30 W
13
14
60
dB
ηD
50
%
Load
f = 945 MHz VDD = 28 V
Pout = 30 W
IDQ = 50 mA
10:1
VSWR
Mismatch ALL PHASE ANGLES
2/7
SD57030-01
TYPICAL PERFORMANCE (CW)
Output Power vs Input Power
Power Gain and Efficiency vs Output Power
Output Power vs Supply Voltage
Output Power vs Gate Source Voltage
3/7
SD57030-01
945 MHz Test Circuit Schematic
VG
G
+
+
VD
D
+
+
RF
IN
RF
OUT
945 MHz Test Circuit ComponentPart List
4/7
SD57030-01
945 MHz Test Circuit Photomaster
945 MHz Test Fixture
5/7
SD57030-01
M250 (.230 x .360 WIDE 2/L N/HERM PILL) MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
5.21
2.16
5.59
8.89
9.40
0.11
0.89
1.45
2.67
TYP.
MAX.
5.71
2.92
6.09
9.40
9.91
0.15
1.14
1.70
3.94
MIN.
0.205
0.085
0.220
0.350
0.370
0.004
0.035
0.057
0.105
MAX.
0.225
0.115
0.240
0.370
0.390
0.006
0.045
0.067
0.155
A
B
C
D
E
F
G
H
I
Controlling Dimension: Inches
1022729B
6/7
SD57030-01
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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