SM6T100CA [STMICROELECTRONICS]
TRANSILTM; TRANSILTM
| 型号： | SM6T100CA |
| 厂家： | 
ST |
| 描述： | TRANSILTM |
| 文件： | 总5页 (文件大小：188K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SM6T6V8A/220A
®
SM6T6V8CA/220CA
TRANSILTM
FEATURES
■
PEAK PULSE POWER : 600 W (10/1000µs)
■
BREAKDOWN VOLTAGE RANGE :
From 6.8V to 220 V.
■
■
■
■
UNI AND BIDIRECTIONAL TYPES
LOW CLAMPING FACTOR
FAST RESPONSE TIME
UL RECOGNIZED
DESCRIPTION
SMB
(JEDEC D0-214AA)
Transil diodes provide high overvoltage protection
by clamping action. Their instantaneous response
to transient overvoltages makes them particu-
larly suited to protect voltage sensitive devices
such as MOS Technology and low voltage sup-
plied IC’s.
ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C)
Symbol
PPP
Parameter
Peak pulse power dissipation (see note 1)
Power dissipation on infinite heatsink
Value
600
5
Unit
W
Tj initial = Tamb
amb = 50°C
P
T
W
IFSM
Non repetitive surge peak forward
current for unidirectional types
tp = 10ms
Tj initial = Tamb
100
A
Tstg
Tj
Storage temperature range
Maximum junction temperature
- 65 to + 175
150
°C
°C
TL
Maximum lead temperature for soldering during 10 s.
260
°C
Note 1 : For a surge greater than the maximum values, the diode will fail in short-circuit.
THERMAL RESISTANCES
Symbol
Rth (j-l)
Parameter
Value
20
Unit
°C/W
°C/W
Junction to leads
Rth (j-a)
Junction to ambient on printed circuit on recommended pad
layout
100
August 2001- Ed: 5A
1/5
SM6Txx
ELECTRICAL CHARACTERISTICS (Tamb = 25°C)
I
I
F
Symbol
VRM
VBR
VCL
IRM
Parameter
Stand-off voltage
V
V
CL
BR
Breakdown voltage
V
V
F
RM
Clamping voltage
V
I
I
RM
Leakage current @ VRM
Peak pulse current
IPP
αT
Voltage temperature coefficient
Forward voltage drop
VF
PP
IRM @ VRM
VBR
@
IR
VCL @ IPP
VCL @ IPP
max
8/20µs
αT
C
Types
max
min nom max
note2
max
10/1000µs
max
note3 note4
10-4/°C pF
typ
Uni
Mar-
Bi
Mar- µA
V
V
V
V
mA
V
A
V
A
directional king directional king
SM6T6V8A DE SM6T6V8CA LE 1000 5.8 6.45 6.8 7.14 10 10.5 57
500 6.4 7.13 7.5 7.88 10 11.3 53
13.4 298
14.5 276
18.6 215
21.7 184
27.2 147
32.5 123
39.3 102
5.7
6.1
7.3
7.8
8.4
8.8
9.2
9.4
9.6
9.7
9.8
9.9
10.0
10.4
10.5
10.6
10.8
10.8
10.8
4000
3700
2800
2300
1900
1600
1350
1250
1150
1075
1000
950
900
625
575
500
400
350
330
SM6T7V5A DG SM6T7V5CA LG
SM6T10A DP SM6T10CA LP
SM6T12A DT SM6T12CA LT
SM6T15A DX SM6T15CA LX
SM6T18A EE SM6T18CA ME
SM6T22A EK SM6T22CA MK
SM6T24A EM SM6T24CA MM
SM6T27A EP SM6T27CA MP
SM6T30A ER SM6T30CA MR
SM6T33A ET SM6T33CA MT
SM6T36A EV SM6T36CA MV
SM6T39A EX SM6T39CA MX
SM6T68A FQ SM6T68CA NQ
SM6T75A FS SM6T75CA NS
SM6T100A FY SM6T100CA NY
SM6T150A GL SM6T150CA OL
SM6T200A GU SM6T200CA OU
SM6T220A GW SM6T220CA OW
10 8.55 9.5 10 10.5
5 10.2 11.4 12 12.6
1 12.8 14.3 15 15.8
1 15.3 17.1 18 18.9
1 18.8 20.9 22 23.1
1 20.5 22.8 24 25.2
1 23.1 25.7 27 28.4
1 25.6 28.5 30 31.5
1 28.2 31.4 33 34.7
1 30.8 34.2 36 37.8
1 33.3 37.1 39 41.0
1 58.1 64.6 68 71.4
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
14.5 41
16.7 36
21.2 28
25.2 24
30.6 20
33.2 18
37.5 16
41.5 14.5 53.5
45.7 13.1 59.0
49.9 12
42.8
48.3
93
83
75
68
62
57
33
30
64.3
53.9 11.1 69.7
92
6.5
121
134
1 64.1 71.3
-
78.8
103 5.8
137 4.4
207 2.9
274 2.2
1 85.5 95.0 100 105
178 22.5
265 15
353 11.3
388 10.3
1
1
1
128 143 150 158
171 190 200 210
188 209 220 231
328
2
Fig. 1: Peak pulse power dissipation versus initial
junction temperature (printed circuit board).
% I
PP
10
s
100
50
0
PULSE WAVEFORM 10/1000
s
t
1000
s
Note 2 : Pulse test : t < 50 ms.
p
Note 3 : ∆V
= αT (T
- 25) V (25°C).
* BR
BR
V = 0 V, F = 1 MHz. For bidirectional types,
R
*
amb
Note 4 :
capacitance value is divided by 2.
2/5
SM6Txx
Fig. 2 : Peak pulse power versus exponential pulse duration.
Fig. 3 : Clamping voltage versus peak pulse current.
Exponential waveform tp = 20 µs ________
tp = 1 ms ——————-
tp = 10 ms ...............
Note : The curves of the figure 3 are specified for a junction temperature of 25°C before surge.
The given results may be extrapolated for other junction temperatures by using the following formula :
∆VBR = αT * [Tamb -25] * VBR(25°C)
For intermediate voltages, extrapolate the given results.
3/5
SM6Txx
Fig. 4a : Capacitance versus reverse applied
voltage for unidirectional types (typical values).
Fig. 4b : Capacitance versus reverse applied
voltage for bidirectional types (typical values).
Fig. 6 : Transient thermal impedance junc-
tion-ambient versus pulse duration.
Mounting on FR4 PC Board with Recommended
pad layout.
Fig. 5 : Peak forward voltage drop versus peak
forward current (typical values for unidirectional
types).
Fig. 7 : Relative variation of leakage current
versus junction temperature.
4/5
SM6Txx
ORDER CODE
SM 6 T 100
C
A
BIDIRECTIONAL
No suffix: Unidirectional
SURFACE MOUNT
600W
BREAKDOWN VOLTAGE
MARKING : Logo, Date Code, Type Code, Cathode Band (for unidirectional types only).
PACKAGE MECHANICAL DATA
SMB (Plastic)
DIMENSIONS
E1
REF.
Millimeters
Inches
Min.
Max.
2.45
0.20
2.20
0.41
5.60
4.60
3.95
1.60
Min.
0.075
0.002
0.077
0.006
0.201
0.159
0.130
0.030
Max.
0.096
0.008
0.087
0.016
0.220
0.181
0.156
0.063
A1
A2
b
1.90
0.05
1.95
0.15
5.10
4.05
3.30
0.75
D
c
E
E
E1
D
A1
A2
c
b
L
L
FOOTPRINT DIMENSIONS (Millimeter)
SMB Plastic.
Packaging : standard packaging is tape and reel.
SOD15 = Standard packaging is in Film.
2.3
Weight = 0.12 g
1.52
2.75
1.52
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-
proval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
© 2001 STMicroelectronics - Printed in Italy - All rights reserved.
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5/5
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