SMP100-140 [STMICROELECTRONICS]

COMMUNICATION EQUIPMENT PROTECTION: TRISIL TM; 通信设备保护： TRISIL TM


型号：	SMP100-140
厂家：	ST
描述：	COMMUNICATION EQUIPMENT PROTECTION: TRISIL TM 通信设备保护： TRISIL TM 触发装置硅浪涌保护器光电二极管通信设备数据判读及分析中心
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SMP100-xxx

COMMUNICATION EQUIPMENT PROTECTION: TRISIL

FEATURES

BIDIRECTIONALCROWBAR PROTECTION

VOLTAGE RANGE : FROM 8V to 270V

REPETITIVEPEAK PULSE CURRENT:

I_PP= 100 A (10/1000 s)

HOLDING CURRENT: I_H= 150mAor 225mA

LOW LEAKAGECURRENT: I_R= 2 µA max

DESCRIPTION

The SMP100 series are transient surge ar-

restors used for the protection of sensitive tele-

com equipment.

SMB

(JEDEC DO-214AA)

MAIN APPLICATIONS

Any sensitive equipment requiring protection

against lightning strikes :

SCHEMATIC DIAGRAM

ANALOGAND DIGITAL LINE CARDS

MAIN DISTRIBUTION FRAMES

TERMINALS AND TRANSMISSION

EQUIPMENT

GAS-TUBEREPLACEMENT

BENEFITS

NO AGEINGAND NO NOISE

IF DESTROYED, THE SMP100 FALLS INTO

SHORT CIRCUIT, STILL ENSURING PROTECTION

BOARD SPACE SAVING

Peak Surge

Voltage

(V)

Voltage

Current

Waveform

(µs)

Admissible Necessary

COMPLIES WITH THE

FOLLOWING STANDARDS:

Waveform

Ipp

(A)

Resistor

(µs)

(Ω)

ITU K20

4000

10/700

1.2/50

5/310

1/20

100

VDE0433

VDE0878

IEC-1000-4-5

level 4

10/700

1.2/50

5/310

8/20

100

FCC Part 68, lightning surge

type A

1500

800

10/160

10/560

10/160

10/560

200

100

FCC Part 68, lightning surge

type B

100

9/720

5/320

BELLCORE TR-NWT-001089

First level

2500

1000

2/10

10/1000

2/10

10/1000

500

100

BELLCORE TR-NWT-001089

Secondlevel

5000

2/10

500

CNET l31-24

4000

0.5/700

0.8/310

100

August 1999 - Ed : 8A

1/9

SMP100-xxx

THERMAL RESISTANCES

Symbol

Parameter

Value

Unit

°C/W

R_th(j-I)

R_th(j-a)

Junction to leads

Junction to ambient on printed circuit

(with standard footprint dimensions)

100

ABSOLUTE MAXIMUM RATINGS

Symbol

(T_amb25°C)

Parameter

Value

Unit

Peakpulse current:

10/1000 s (open circuit voltage waveform 1 kV 10/1000 s)

I_pp

100

150

250

500

5/310 s

(open circuit voltage waveform4 kV, 10/700 s)

8/20 µs

2/10 µs

(open circuit voltage waveform 4 kV 1.2/50 µs)

(open circuit voltage waveform 2.5kV 2/10 µs)

I_FS

Fail-safe mode

8/20 µs

I_TSM

Non repetitive surge peak on-state current

One cycle

50Hz

60Hz

Non repetitive surge peak on-state current

F = 50Hz

0.2s

T_L

Maximum lead temperaturefor soldering during 10s

260

°C

T_stg

Storagetemperaturerange

Maximum junction temperature

- 55 to + 150

150

°C

Note 1:

Pulse waveform

% I

100

10 / 1000 µs tr = 10 µs tp = 1000 µs

8 / 20 µs tr = 8 µs tp = 20 µs

tp = 310 s

5 / 310 s

tr = 5 s

1 / 20 s

tr = 1 s

tp = 20 s

2 / 10 µs

tr = 2 µs

tp = 10 µs

2/9

SMP100-xxx

ELECTRICALCHARACTERISTICS (T_amb= 25°C)

Symbol

V_RM

I_RM

V_R

Parameter

Stand-offvoltage

Leakage current at stand-off voltage

Continuous reverse voltage

Continuous reverse current

Breakdown voltage

I_R

V_BR

V_BO

I_H

Breakovervoltage

Holding current

I_BO

Breakovercurrent

I_PP

Peak pulse current

Capacitance

STATIC PARAMETERS

Type

I_RM@ V_RM

max.

I_R@ V_R

max.

V_BO@ I_BO

max.

I_H

min.

typ.

note 1

note 2

note 3

note 4

50(typ)

150

225

SMP100-8

800

100

SMP100LC-35

SMP100-65

160

140

130

120

140

130

120

SMP100-120

110

120

170

200

230

120

170

200

230

120

140

200

230

270

140

200

230

270

160

200

265

300

350

200

265

300

350

SMP100-140

SMP100-200

SMP100-230

SMP100-270

SMP100-140H225

SMP100-200H225

SMP100-230H225

SMP100-270H225

Note 1 : I measured at V guarantees V >V

BR R

Note 2 : Measuredat 50Hz, see testcircuit 1. In any case V

Note 3 : See functional holding current test circuit 2.

≥ V

BOmin

Note 4 : V =1V bias, V

=1V, F=1MHz.

RMS

3/9

SMP100-xxx

DYNAMIC PARAMETERS

Symbol

Test conditions (see note 5)

Type

Max.

Unit

SMP100-8

SMP100LC-35

SMP100-65

SMP100-120

200

220

285

320

370

220

285

320

370

SMP100-140

Test conditions 1

dV/dt = 100 V/µs, di/dt < 10 A/µs, I_PP= 100 A

SMP100-200

V_BO

SMP100-230

Test conditions 2

dV/dt = 1 kV/µs, di/dt < 10 A/µs, I_PP= 10 A

SMP100-270

SMP100-140H225

SMP100-200H225

SMP100-230H225

SMP100-270H225

Note 5 : V parameters are given by a KeyTek ’System 2’ generator with PN246I module.

See test circuits 3 forV

dynamic parameters.

TEST CIRCUIT 1 FOR I_BOand V_BOparameters:

= 20ms

Auto

Transformer

220V/2A

static

relay.

140

240

measure

out

D.U.T

measure

Transformer

220V/800V

TEST PROCEDURE :

Pulse Test duration (tp = 20ms):

- For Bidirectional devices = Switch K is closed

- For Unidirectionaldevices = Switch K is open.

_OUTSelection

- Device with V_BO200 Volt

- V_OUT= 250 V_RMS, R₁= 140

- Device with V_BO≥ 200 Volt

- V_OUT= 480V_RMS, R₂= 240 Ω.

Ω

4/9

SMP100-xxx

TEST CIRCUIT 2 for I_Hparameter.

- V

D.U.T.

= - 48 V

BAT

Surge generator

This is a GO-NO GO test which allows to confirm the holding current (I_H) level in a functionaltest circuit.

TEST PROCEDURE :

- Adjust the current level at the I_Hvalue by short circuiting the D.U.T.

- Firethe D.U.T. with a surge current : I_pp= 10A, 10/1000 µs.

- The D.U.T. will come back to the off-statewithin 50 ms max.

TEST CIRCUITS 3 FOR V_BODYNAMIC PARAMETERS

100 V / µs, di/dt < 10 A / µs, Ipp = 100 A

2 Ω

45 Ω

83 Ω

46 µH

0.36 nF

10 µF

66 Ω

470 Ω

KeyTek’System 2’ generator with PN246I module

1 kV / µs, di/dt < 10 A / µs, Ipp = 10 A

46 µH

26 µH

60 µF

250 Ω

47 Ω

12 Ω

KeyTek ’System 2’ generator with PN246I module

5/9

SMP100-xxx

TYPICAL APPLICATIONS

1 - Primary protection module

3 * SMP100

Line

Card

MDF

2 - Line card protection

bat

- V

PTC

LINE A

RING

RELAY

Integrated

SLIC

220

LINE B

PTC

3 * SMP100

LCP1511D

3 - ISDN: U interfaceprotection

3 * SMP100

1/2 DA108S1

PTC

Internal

circuitry

+ 5 V

PTC

Feeder

6/9

SMP100-xxx

Fig 1 :

Fig 2 :

On-state voltage versus on-state current

(typical values).

Non repetitive surge peak on-state current

versus overload duration(T_jinitial = 25 °C).

I^T(A)

ITSM(A)

F=50Hz

Tj=25°C

t(s)

1E+0

VT(V)

2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6 3.8 4.0

1E-2

1E-1

1E+1

1E+2

1E+3

Fig 4 :

Variation of thermal impedance junction to

Fig 3 :

Relative variation of holding current versus

ambient versus pulse duration.

junction temperature.

Zth(j-a)(°CW)

IH[Tj] / IH[Tj=25°C]

100

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

tp(s)

1E+0

Tj(°C)

1E-3

1E-2

1E-1

1E+1

1E+2 5E+2

-40

-20

100 120

Fig 5 :

Relative variation of junction capacitance

versus reverse voltage applied (typical values).

Note

: For other types than SMP100-8, the curve can be

extrapolated(dotted line)

C[VR]/C[VR=1V]

1.0

F=1MHz

0.5

0.2

VR (V)

0.1

100

500

7/9

SMP100-xxx

MARKING

Type

Marking

PL8

L35

Package

SMB

Weight

0.107g

Base qty

2500

Delivery mode

Tape& Reel

SMP100-8

SMP100LC-35

SMP100-65

P06

P12

P14

P20

P23

P27

P16

P22

P24

P29

SMP100-120

SMP100-140

SMP100-200

SMP100-230

SMP100-270

SMP100-140H125

SMP100-200H225

SMP100-230H225

SMP100-270H225

Epoxy meets UL94, V0

ORDER CODE

SMP 100

270 H225

SURFACE

MOUNT

PROTECTION

I_PP= 100A

VOLTAGE

H225 : I_H= 225 mA

: I_H= 150mA

8/9

SMP100-xxx

PACKAGE MECHANICAL DATA

SMB (Plastic)

DIMENSIONS

Millimeters Inches

Min.

REF.

Min.

Max.

2.45

0.20

2.20

0.41

5.60

4.60

3.95

1.60

Max.

0.096

0.008

0.087

0.016

0.220

0.181

0.156

0.063

1.90

0.05

1.95

0.15

5.10

4.05

3.30

0.75

0.075

0.002

0.077

0.006

0.201

0.159

0.130

0.030

FOOT PRINT (in millimeters)

2.3

1.52

2.75

1.52

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implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to

change without notice. This publication supersedes and replaces all information previously supplied.

STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written

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9/9

SMP100-140 [STMICROELECTRONICS]

相关型号：

SMP100-140H125

SMP100-140H225

SMP100-200

SMP100-200H225

SMP100-230

SMP100-230H225

SMP100-270

SMP100-270H225

SMP100-65

SMP100-8

SMP100-XXX

SMP1000G-JQ