SMP80MC-320 [STMICROELECTRONICS]

TRISIL for telecom equipment protection; TRISIL电信设备保护
SMP80MC-320
型号: SMP80MC-320
厂家: ST    ST
描述:

TRISIL for telecom equipment protection
TRISIL电信设备保护

电信集成电路 电信电路 电信保护电路 光电二极管
文件: 总10页 (文件大小:118K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SMP80MC  
TRISIL™ for telecom equipment protection  
Features  
Bidirectional crowbar protection  
Voltage: range from 120 V to 320 V  
Low V / V ratio  
BO  
R
Micro capacitance equal to 12 pF @ 50 V  
Low leakage current : I = 2 µA max  
SMB  
R
(JEDEC DO-214AA)  
Holding current: I = 150 mA min  
H
Repetitive peak pulse current :  
I = 80 A (10/1000 µs)  
PP  
Order codes  
Main applications  
Part Number  
Marking  
Any sensitive equipment requiring protection  
against lightning strikes and power crossing:  
SMP80MC-120  
SMP80MC-140  
SMP80MC-160  
SMP80MC-200  
SMP80MC-230  
SMP80MC-270  
SMP80MC-320  
TP12  
TP14  
TP16  
TP20  
TP23  
TP27  
TP32  
Terminals (phone, fax, modem...) and central  
office equipment  
Description  
The SMP80MC is a series of micro capacitance  
transient surge arrestors designed for the  
protection of high debit rate communication  
equipment on CPE side. Its micro capacitance  
avoids any distortion of the signal and is  
compatible with digital transmission like ADSL2  
and ADSL2+.  
Schematic diagram  
Benefits  
Trisils are not subject to ageing and provide a fail  
safe mode in short circuit for a better protection.  
They are used to help equipment to meet main  
standards such as UL1950, IEC950 / CSA C22.2  
and UL1459. They have UL94 V0 approved resin.  
SMB package is JEDEC registered (DO-214AA).  
Trisils comply with the following standards GR-  
1089 Core, ITU-T-K20/K21, VDE0433, VDE0878,  
IEC61000-4-5 and FCC part 68.  
TM: TRISIL is a trademark of STMicroelectronics.  
January 2007  
Rev 4  
1/10  
www.st.com  
10  
Characteristics  
SMP80MC  
1
Characteristics  
Table 1.  
Complies with the following standards  
Peak Surge  
Voltage  
(V)  
Required  
peakcurrent  
(A)  
Minimum serial  
resistor to meet  
standard (Ω)  
Waveform  
Voltage  
Current  
waveform  
STANDARD  
GR-1089 Core  
First level  
2500  
1000  
2/10 µs  
10/1000 µs  
500  
100  
2/10 µs  
10/1000 µs  
5
2.5  
GR-1089 Core  
Second level  
5000  
1500  
2/10 µs  
500  
100  
2/10 µs  
10  
0
GR-1089 Core  
Intra-building  
2/10 µs  
10/700 µs  
1/60 ns  
2/10 µs  
6000  
1500  
150  
37.5  
10  
0
ITU-T-K20/K21  
5/310 µs  
ITU-T-K20  
(IEC61000-4-2)  
8000  
15000  
ESD contact discharge  
ESD air discharge  
0
0
4000  
2000  
100  
0
0
VDE0433  
VDE0878  
10/700 µs  
1.2/50 µs  
5/310 µs  
50  
4000  
2000  
100  
0
0
1/20 µs  
50  
4000  
4000  
10/700 µs  
1.2/50 µs  
100  
100  
5/310 µs  
8/20 µs  
0
0
IEC61000-4-5  
FCC Part 68, lightning  
surge type A  
1500  
800  
10/160 µs  
10/560 µs  
200  
100  
10/160 µs  
10/560 µs  
2.5  
0
FCC Part 68, lightning  
surge type B  
1000  
9/720 µs  
= 25° C)  
25  
5/320 µs  
0
Table 2.  
Symbol  
Absolute ratings (T  
amb  
Conditions  
Parameter  
Value  
Unit  
10/1000 µs  
8/20 µs  
10/560 µs  
5/310 µs  
10/160 µs  
1/20 µs  
80  
200  
100  
120  
150  
200  
250  
I
Repetitive peak pulse current (see Figure 1)  
A
PP  
2/10 µs  
I
Fail-safe mode : maximum current (1)  
8/20 µs  
5
kA  
A
FS  
t = 0.2 s  
t = 1 s  
t = 2 s  
14  
8
6.5  
2
Non repetitive surge peak on-state current  
(sinusoidal)  
I
TSM  
t = 15 mn  
t = 16.6 ms  
t = 20 ms  
7.5  
7.8  
I2t  
I2t value for fusing  
A2s  
Storage temperature range  
T
T
-55 to 150  
150  
stg  
j
° C  
Maximum junction temperature  
T
Maximum lead temperature for soldering during 10 s.  
260  
° C  
L
1. in fail safe mode, the device acts as a short circuit  
2/10  
SMP80MC  
Characteristics  
Table 3.  
Symbol  
Thermal resistances  
Parameter  
Value  
Unit  
Rth(j-a) Junction to ambient (with recommended footprint)  
Rth(j-l) Junction to leads  
100  
20  
° C/W  
° C/W  
Table 4.  
Symbol  
Electrical characteristics (T  
= 25° C)  
amb  
Parameter  
V
Stand-off voltage  
Breakdown voltage  
Breakover voltage  
Leakage current  
RM  
V
V
BR  
BO  
RM  
I
I
Peak pulse current  
Breakover current  
Holding current  
PP  
BO  
I
I
H
V
Continuous reverse voltage  
R
I
Leakage current at V  
R
R
C
Capacitance  
Dynamic  
VBO  
Static  
VBO @ IBO  
(1)  
(4)  
IRM @ VRM  
max.  
IR @ VR  
IH  
C(5)  
C(6)  
(2)  
(3)  
Types  
max.  
µA  
max.  
V
max. max. min.  
typ.  
pF  
typ.  
pF  
µA  
V
V
V
mA  
mA  
SMP80MC-120  
SMP80MC-140  
SMP80MC-160  
SMP80MC-200  
SMP80MC-230  
SMP80MC-270  
SMP80MC-320  
108  
126  
144  
180  
207  
243  
290  
120  
140  
160  
200  
230  
270  
320  
155  
180  
205  
255  
295  
345  
400  
155  
180  
205  
255  
295  
345  
400  
2
5
800  
150  
12  
25  
1. IR measured at VR guarantee VBR min VR  
2. See Figure 9 functional test circuit 1  
3. See Figure 10 test circuit 2  
4. See Figure 11 functional holding current test circuit 3  
5. VR = 50 V bias, VRMS = 1 V, F= 1 MHz  
6. VR = 2 V bias, VRMS = 1 V, F = 1 MHz  
3/10  
Characteristics  
SMP80MC  
Figure 1.  
Pulse waveform  
Figure 2.  
Non repetitive surge peak on-state  
current versus overload duration  
I
(A)  
TSM  
Repetitive peak pulse current  
tr = rise time (µs)  
40  
35  
30  
25  
20  
15  
10  
5
% I  
PP  
F=50Hz  
Tj initial = 25°C  
tp = pulse duration time (µs)  
100  
50  
0
t
t(s)  
t
t
p
r
0
1.E-02  
1.E-01  
1.E+00  
1.E+01  
1.E+02  
1.E+03  
Figure 3.  
On-state voltage versus on-state  
current (typical values)  
Figure 4.  
Relative variation of holding  
current versus junction  
temperature  
I (A)  
T
IH[Tj] / IH[Tj=25°C]  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
100  
Tj=25°C  
Tj(°C)  
V (V)  
T
10  
0
-40 -30 -20 -10  
0
10 20 30 40 50 60 70 80 90 100 110 120 130  
1
2
3
4
5
6
7
8
Figure 5.  
Relative variation of breakover  
voltage versus junction  
temperature  
Figure 6.  
Relative variation of leakage  
current versus junction  
temperature (typical values)  
V
[Tj] / V [Tj=25°C]  
BO BO  
I [Tj] / I [Tj=25°C]  
R
R
1.08  
1.07  
1.06  
1.05  
1.04  
1.03  
1.02  
1.01  
1.00  
0.99  
0.98  
0.97  
0.96  
0.95  
0.94  
1.E+03  
1.E+02  
1.E+01  
1.E+00  
VR=243V  
Tj(°C)  
Tj(°C)  
-40 -30 -20 -10  
0
10 20 30 40 50 60 70 80 90 100 110 120 130  
25  
50  
75  
100  
125  
4/10  
SMP80MC  
Figure 7.  
Characteristics  
Variation of thermal impedance  
junction to ambient versus pulse  
duration (Printed circuit board FR4,  
SCu=35µm, recommended pad  
layout)  
Figure 8.  
Relative variation of junction  
capacitance versus reverse voltage  
applied (typical values)  
Z
/R  
C [V ] / C [V =2V]  
th(j-a) th(j-a)  
R
R
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
F =1MHz  
VOSC = 1VRMS  
Tj = 25°C  
tp(s)  
V (V)  
R
1.E-02  
1.E-01  
1.E+00  
1.E+01  
1.E+02  
1.E+03  
1
10  
100  
1000  
Figure 9.  
Test circuit 1 for dynamic IBO and VBO parameters  
100 V / µs, di/dt < 10 A / µs, Ipp = 80A  
2 Ω  
45 Ω  
83 Ω  
46 µH  
0.36 nF  
10 µF  
U
66 Ω  
470 Ω  
KeyTek 'System 2' generator with PN246I module  
1 kV / µs, di/dt < 10 A / µs, Ipp = 10 A  
46 µH  
26 µH  
60 µF  
250 Ω  
47 Ω  
U
12 Ω  
KeyTek 'System 2' generator with PN246I module  
5/10  
Characteristics  
SMP80MC  
Figure 10. Test circuit 2 for IBO and VBO parameters  
K
ton = 20ms  
R1 = 140Ω  
R2 = 240Ω  
220V 50Hz  
VBO  
measurement  
DUT  
Vout  
1/4  
IBO  
measurement  
TEST PROCEDURE  
Pulse test duration (tp = 20ms):  
for Bidirectional devices = Switch K is closed  
for Unidirectional devices = Switch K is open  
V
selection:  
OUT  
Device with V < 200V V  
= 250 V  
= 480 V  
, R1 = 140Ω  
, R2 = 240Ω  
BO  
OUT  
RMS  
Device with V 200V V  
BO  
OUT  
RMS  
Figure 11. Test circuit 3 for dynamic IH parameter  
R
Surge  
generator  
V
= - 48 V  
BAT  
D.U.T  
This is a GO-NOGO test which allows to confirm the holding current (I ) level in a  
H
functional test circuit.  
TEST PROCEDURE  
1/ Adjust the current level at the I value by short circuiting the AK of the D.U.T.  
H
2/ Fire the D.U.T. with a surge current  
I
=
PP 10A, 10/1000µs.  
3/ The D.U.T. will come back off-state within 50ms maximum.  
6/10  
SMP80MC  
Ordering Information Scheme  
2
Ordering Information Scheme  
SMP 80 MC - xxx  
Trisil surface mount  
Repetitive peak pulse current  
80 = 80A  
Capacitance  
MC = Micro Capacitance  
Voltage  
120 = 120 V  
140 = 140 V  
160 = 160 V  
200 = 200 V  
230 = 230 V  
270 = 270 V  
320 = 320 V  
7/10  
Package information  
SMP80MC  
3
Package information  
Epoxy meets UL94, V0  
Table 5.  
SMB dimensions  
Dimensions  
Millimeters  
Min. Max.  
Ref.  
Inches  
E1  
Min.  
Max.  
A1  
A2  
b
1.90  
0.05  
1.95  
0.15  
5.10  
4.05  
3.30  
0.75  
2.45  
0.20  
2.20  
0.40  
5.60  
4.60  
3.95  
1.50  
0.075  
0.002  
0.077  
0.006  
0.201  
0.159  
0.130  
0.030  
0.096  
0.008  
0.087  
0.016  
0.220  
0.181  
0.156  
0.059  
D
E
c
A1  
E
A2  
E1  
D
C
L
b
L
Figure 12. Footprint (dimensions in mm)  
1.62  
2.60  
1.62  
2.18  
5.84  
In order to meet environmental requirements, ST offers these devices in ECOPACK®  
packages. These packages have a lead-free second level interconnect. The category of  
second level interconnect is marked on the package and on the inner box label, in  
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering  
conditions are also marked on the inner box label. ECOPACK is an ST trademark.  
ECOPACK specifications are available at: www.st.com.  
8/10  
SMP80MC  
Ordering information  
4
Ordering information  
Part Number  
Marking  
Package  
Weight  
Base qty  
Delivery mode  
SMP80MC-120  
SMP80MC-140  
SMP80MC-160  
SMP80MC-200  
SMP80MC-230  
SMP80MC-270  
SMP80MC-320  
TP12  
TP14  
TP16  
TP20  
TP23  
TP27  
TP32  
SMB  
0.11 g  
2500  
Tape and reel  
5
Revision history  
Date  
Revision  
Description of Changes  
September-2001  
11-May-2005  
20-Jun-2005  
1
2
3
First issue.  
New types introduction.  
Qualification of new types  
Reformatted to current standards. Added product  
SMP80MC-320  
18-Jan-2007  
4
9/10  
SMP80MC  
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10/10  

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