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SMTPB232

更新时间：2024-10-29 06:17:44
品牌：STMICROELECTRONICS
描述：TRISILTM

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中文翻译

PCB计价

SMTPB232 概述

TRISILTM TRISILTM

SMTPB232 数据手册

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SMTPB SERIES  
TM  
TRISIL  
MAIN APPLICATIONS  
Any sensitive equipment requiring protection  
against lightning strikes:  
ANALOGAND DIGITAL LINE CARDS  
MAIN DISTRIBUTION FRAMES  
TERMINALSANDTRANSMISSIONEQUIPMENT  
GMS-TUBE REPLACEMENT  
DESCRIPTION  
SMC  
The SMTPBxxseries hasbeen designedto protect  
telecommunication equipment against lightning  
and transient induced by AC power lines.  
SCHEMATIC DIAGRAM  
FEATURES  
BIDIRECTIONAL CROWBAR PROTECTION.  
BREAKDOWNVOLTAGE RANGE:  
From 62 V To 270 V.  
HOLDING CURRENT: IH = 150 mA min  
REPETITIVEPEAK PULSE CURRENT :  
IPP = 100A, 10/1000 µs.  
BENEFITS  
NO AGEINGAND NO NOISE  
IF DESTROYED, THE SMTPB FALLS INTO  
SHORT CIRCUIT, STILL ENSURING  
PROTECTION  
Peak Surge  
Voltage  
(V)  
Voltage  
Current  
Admissible Necessary  
COMPLIES WITH THE  
FOLLOWING STANDARDS:  
Waveform  
Waveform  
Ipp  
(A)  
Resistor  
( s)  
µ
( s)  
µ
( )  
Ω
CCITT K20  
VDE0433  
4000  
4000  
4000  
10/700  
10/700  
1.2/50  
5/310  
5/310  
1/20  
100  
100  
100  
-
-
-
VDE0878  
IEC-1000-4-5  
level 4  
level 4  
10/700  
1.2/50  
5/310  
8/20  
100  
100  
-
-
FCC Part 68, lightning surge  
type A  
1500  
800  
10/160  
10/560  
10/160  
10/560  
200  
100  
-
-
FCC Part 68, lightning surge  
type B  
100  
5/320  
5/320  
25  
-
BELLCORETR-NWT-001089  
First level  
2500  
1000  
2/10  
10/1000  
2/10  
10/1000  
500  
100  
-
-
BELLCORETR-NWT-001089  
Second level  
500  
2/10  
2/10  
500  
-
CNET l31-24  
4000  
0.5/700  
0.8/310  
100  
-
1/5  
August 1999 - Ed: 2C  
SMTPBxxx  
ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C)  
Symbol  
Parameter  
Value  
Unit  
W
P
Power dissipation  
Peakpulse current  
T
lead = 50 °C  
5
IPP  
10/1000 µs  
8/20 µs  
100  
250  
500  
A
2/10 µs  
ITSM  
Non repetitivesurge peak on-state  
current  
tp = 20 ms  
VRM  
50  
A
dV/dt  
Critical rate of rise of off-state voltage  
5
KV/µs  
Tstg  
Tj  
Storagetemperature range  
Maximum junction temperature  
- 55 to + 150  
+ 150  
°C  
°C  
TL  
Maximum lead temperature for soldering during 10 s.  
+ 260  
°C  
THERMAL RESISTANCES  
Symbol  
Parameter  
Value  
20  
Unit  
°C/W  
°C/W  
Rth (j-l)  
Junctionto leads  
Rth (j-a)  
Junctionto ambient.  
On printed circuit with standard footprint dimensions.  
75  
ELECTRICAL CHARACTERISTICS  
(Tamb =25°C)  
Symbol  
VRM  
IRM  
VR  
Parameter  
Stand-offvoltage  
Leakage current at stand-offvoltage  
ContinuousReverse voltage  
Breakdownvoltage  
Breakovervoltage  
VBR  
VBO  
IH  
Holding current  
IBO  
Breakovercurrent  
IPP  
Peakpulse current  
C
Capacitance  
Type  
Marking  
IRM @ VRM  
max.  
IR @ VR  
VBO @ IBO  
IH  
C
max.  
note1  
max.  
max.  
min.  
note3  
typ.  
note4  
note2  
Laser  
µA  
V
µA  
V
V
mA  
mA  
pF  
SMTPB62  
SMTPB68  
SMTPB120  
SMTPB200  
SMTPB270  
W07  
W11  
W21  
W31  
W43  
2
2
2
2
2
56  
61  
108  
180  
243  
50  
50  
50  
50  
50  
62  
68  
120  
200  
270  
82  
90  
160  
267  
360  
800  
800  
800  
800  
800  
150  
150  
150  
150  
150  
160  
160  
140  
130  
120  
All parameters tested at 25°C, except where indicated.  
Note 1: measured at V guarantees V ≥ V  
R
I
Note 3: See test circuit 2.  
Note 4: = 1V, F = 1MHz. Refer to fig 3 for C versus V .  
R
R
R
BRmin  
Note 2: Measured at 50 Hz (1 cycle) - Seetest circuit 1.  
V
R
2/5  
SMTPBxxx  
TEST CIRCUIT 1 FOR IBO and VBO parameters:  
tp  
= 20ms  
Auto  
Transformer  
220V/2A  
R1  
static  
relay.  
140  
R2  
240  
K
V
V
BO  
measure  
out  
D.U.T  
I
BO  
measure  
Transformer  
220V/800V  
5A  
TEST PROCEDURE :  
Pulse Test duration (tp = 20ms):  
- For Bidirectional devices= Switch K is closed  
- For Unidirectionaldevices = Switch K is open.  
V
OUT Selection  
- Device with VBO < 200 Volt  
- VOUT = 250 VRMS, R1 = 140 Ω.  
- Device with VBO ≥ 200 Volt  
- VOUT = 480 VRMS, R2 = 240 Ω.  
TEST CIRCUIT 2 for IH parameter.  
R
- V  
P
D.U.T.  
V
= - 48 V  
BAT  
Surge generator  
This is a GO-NOGO Test which allows to confirm the holdingcurrent (IH) level in a functional  
test circuit.  
TEST PROCEDURE :  
1) Adjustthe current level at the IH value by short circuiting the AK of the D.U.T.  
2) Fire the D.U.T with a surge Current : Ipp = 10A , 10/1000µs.  
3) The D.U.T will come back off-state within 50 ms max.  
3/5  
SMTPBxxx  
Fig. 1:  
Non repetitive surge peak on-state current  
Fig. 2:  
junction temperature.  
Relativevariation of holding current versus  
versus overload duration (Tj initial=25°C).  
Fig. 3: Relative variation of junction capacitance  
versus reverse applied voltage(typical values).  
Note: For VRM upper than 56V, the curve is  
extrapolated(dotted line).  
Fig. 4: On-state voltage versus on-state current  
(typical values).  
IT(A)  
50  
Tj=25°C  
10  
VT(V)  
1
2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6 3.8 4.0  
Fig. 5: Transient thermal impedance junction to  
ambient versus pulse duration (for FR4 PC Board  
withrecommended pad layout).  
4/5  
SMTPBxxx  
ORDER CODE  
SM TPB 100  
SURFACE MOUNT  
VOLTAGE  
TRISIL PROTECTION 100 A  
Marking:  
Logo, date code, type code.  
PACKAGE MECHANICAL DATA.  
SMC  
DIMENSIONS  
Millimeters Inches  
Min.  
REF.  
E1  
Min.  
1.90  
0.05  
2.90  
0.15  
7.75  
6.60  
4.40  
5.55  
0.75  
Max.  
2.45  
0.20  
3.2  
Max.  
0.096  
0.008  
0.126  
0.016  
0.321  
0.281  
0.185  
0.246  
0.063  
A1  
A2  
b
0.075  
0.002  
0.114  
0.006  
0.305  
0.260  
0.173  
0.218  
0.030  
D
c
0.41  
8.15  
7.15  
4.70  
6.25  
1.60  
E
E
E1  
E2  
A1  
A2  
C
D
L
E2  
b
L
FOOTPRINT DIMENSIONS  
SMC  
(in millimeters)  
Packaging: Standardpackagingis in tapeand reel  
Weight : 0.25g.  
3.3  
2.0  
4.2  
2.0  
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of  
use of such information nor forany infringement of patents or other rights of third parties which may result from its use. No license is granted by  
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to  
change without notice. This publication supersedes and replaces all information previously supplied.  
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-  
proval of STMicroelectronics.  
The ST logo is a registered trademark of STMicroelectronics  
1999 STMicroelectronics - Printed in Italy - All rights reserved.  
STMicroelectronics GROUP OF COMPANIES  
Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia  
Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.  
http://www.st.com  
5/5  

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