ST13007NFP [STMICROELECTRONICS]
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS; 高压快速开关NPN功率晶体管
| 型号： | ST13007NFP |
| 厂家： | 
ST |
| 描述： | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS |
| 文件： | 总7页 (文件大小：78K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ST13007N
ST13007NFP
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTORS
■
■
■
■
HIGH VOLTAGE CAPABILITY
NPN TRANSISTOR
LOW SPREAD OF DYNAMIC PARAMETERS
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLEOPERATION
■
VERY HIGH SWITCHING SPEED
APPLICATIONS
■
ELECTRONIC BALLASTSFOR
FLUORESCENT LIGHTING
SWITCH MODE POWER SUPPLIES
3
3
2
2
1
1
■
TO-220
TO-220FP
DESCRIPTION
The device is manufactured using high voltage
Multi Epitaxial Planar technology for high
switching speeds and high voltage capability.
They use a Cellular Emitter structure to enhance
switching speeds.
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
ST13007N
ST13007NFP
VCEV
VCEO
VEBO
IC
Collector-Emitter Voltage (VBE = -1.5V)
Collector-Emitter Voltage (IB = 0)
Emitter-Base Voltage (IC = 0)
Collector Current
700
400
9
V
V
V
8
A
ICM
IB
Collector Peak Current
Base Current
16
4
A
A
IBM
Ptot
Tstg
Tj
Base Peak Current
Total Dissipation at Tc ≤ 25 oC
8
A
80
33
W
oC
oC
Storage Temperature
-65 to 150
150
Max. Operating Junction Temperature
1/7
March 1999
ST13007N / ST13007NFP
THERMAL DATA
TO-220
TO-220FP
Rthj-case Thermal Resistance Junction-case
Rthj-amb Thermal Resistance Junction-Ambient
Max
Max
1.56
62.5
3.8
62.5
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
VCE = rated VCEV
VCE = rated VCEV Tc = 100 C
Min.
Typ.
Max.
Unit
ICEV
Collector Cut-off
Current (VBE = -1.5V)
1
5
mA
mA
o
IEBO
Emitter Cut-off Current VEB = 9 V
(IC = 0)
1
mA
VCEO(sus) Collector-Emitter
Sustaining Voltage
IC = 10 mA
400
V
VCE(sat)
Collector-Emitter
Saturation Voltage
IC = 2 A
IC = 5 A
IC = 8 A
IC = 5 A
IB = 0.4 A
IB = 1 A
IB = 2 A
IB = 1 A
1
2
3
3
V
V
V
V
Tc = 100 oC
Tc = 100 oC
VBE(sat)
Base-Emitter
Saturation Voltage
IC = 2 A
IC = 5 A
IC = 5 A
IB = 0.4 A
IB = 1 A
IB = 1 A
1.2
1.6
1.5
V
V
V
hFE
DC Current Gain
IC = 2 A
Group A
Group B
IC = 5 A
VCE = 5 V
15
26
5
28
40
30
VCE = 5 V
INDUCTIVE LOAD
Storage Time
Fall Time
IC = 5 A
IB1 = 1 A
RBB = 0 Ω
VCL = 200 V
VBEoff = -5 V
ts
tf
0.6
60
1.5
110
µs
ns
* Pulsed: Pulse duration = 300 µs, duty cycle 2 %
Note : Product is pre-selected inDC current gain (GROUP A and GROUP B). STMicroelectronics reserves the right to ship either groups
according to production availability. Please contact your nearest STMicroelectronics sales office for delivery details.
2/7
ST13007N / ST13007NFP
Safe Operating Areas
Derating Curve
DC Current Gain
DC Current Gain
Collector Emitter SaturationVoltage
Base Emitter Saturation Voltage
3/7
ST13007N / ST13007NFP
InductiveFall Time
InductiveStorage Time
Reverse Biased SOA
RBSOA and Inductive Load Switching Test
Circuits
1) Fast electronic switch
2) Non-inductive Resistor
3) Fast recovery rectifier
4/7
ST13007N / ST13007NFP
TO-220 MECHANICAL DATA
mm
inch
DIM.
MIN.
4.40
1.23
2.40
TYP.
MAX.
4.60
1.32
2.72
MIN.
0.173
0.048
0.094
TYP.
MAX.
0.181
0.051
0.107
A
C
D
D1
E
1.27
0.050
0.49
0.61
1.14
1.14
4.95
2.4
0.70
0.88
1.70
1.70
5.15
2.7
0.019
0.024
0.044
0.044
0.194
0.094
0.393
0.027
0.034
0.067
0.067
0.203
0.106
0.409
F
F1
F2
G
G1
H2
L2
L4
L5
L6
L7
L9
DIA.
10.0
10.40
16.4
0.645
13.0
2.65
15.25
6.2
14.0
2.95
15.75
6.6
0.511
0.104
0.600
0.244
0.137
0.147
0.551
0.116
0.620
0.260
0.154
0.151
3.5
3.93
3.85
3.75
P011C
5/7
ST13007N / ST13007NFP
TO-220FP MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
TYP.
MAX.
4.6
2.7
2.75
0.7
1
MIN.
0.173
0.098
0.098
0.017
0.030
0.045
0.045
0.195
0.094
0.393
MAX.
0.181
0.106
0.108
0.027
0.039
0.067
0.067
0.204
0.106
0.409
A
B
4.4
2.5
D
2.5
E
0.45
0.75
1.15
1.15
4.95
2.4
F
F1
F2
G
1.7
1.7
5.2
2.7
10.4
G1
H
10
L2
L3
L4
L6
L7
Ø
16
0.630
28.6
9.8
15.9
9
30.6
10.6
16.4
9.3
1.126
0.385
0.626
0.354
0.118
1.204
0.417
0.645
0.366
0.126
3
3.2
L3
L6
L7
¯
1 2 3
L4
L2
6/7
ST13007N / ST13007NFP
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
1999 STMicroelectronics – Printed in Italy – All Rights Reserved
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.
7/7
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