ST24C04M3 [STMICROELECTRONICS]
I2C Serial EEPROM ; I2C串行EEPROM\n型号: | ST24C04M3 |
厂家: | ST |
描述: | I2C Serial EEPROM
|
文件: | 总16页 (文件大小:127K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
ST24C04, ST25C04
ST24W04, ST25W04
2
4 Kbit Serial I C Bus EEPROM
with User-Defined Block Write Protection
1 MILLION ERASE/WRITE CYCLES with
40 YEARS DATA RETENTION
SINGLE SUPPLY VOLTAGE:
– 3V to 5.5V for ST24x04 versions
– 2.5V to 5.5V for ST25x04 versions
8
HARDWARE WRITE CONTROL VERSIONS:
ST24W04 and ST25W04
8
PROGRAMMABLE WRITE PROTECTION
TWO WIRE SERIAL INTERFACE, FULLY I2C
BUS COMPATIBLE
1
1
PSDIP8 (B)
0.25mm Frame
SO8 (M)
150mil Width
BYTE and MULTIBYTE WRITE (up to 4
BYTES)
PAGE WRITE (up to 8 BYTES)
BYTE, RANDOM and SEQUENTIAL READ
MODES
Figure 1. Logic Diagram
SELF TIMED PROGRAMMING CYCLE
AUTOMATIC ADDRESS INCREMENTING
ENHANCED ESD/LATCH UP
PERFORMANCES
V
CC
DESCRIPTION
This specification covers a range of 4 Kbits I2C bus
EEPROM products, the ST24/25C04 and the
ST24/25W04. In the text, products are referred to
as ST24/25x04, where "x" is: "C" for Standard
version and "W" for hardware Write Control ver-
sion.
2
E1-E2
PRE
SDA
ST24x04
ST25x04
SCL
Table 1. Signal Names
MODE/WC*
PRE
E1-E2
SDA
SCL
Write Protect Enable
Chip Enable Inputs
Serial Data Address Input/Output
Serial Clock
V
SS
AI00851E
Multibyte/Page Write Mode
(C version)
MODE
WC
VCC
VSS
Write Control (W version)
Supply Voltage
Ground
Note: WC signal is only available for ST24/25W04 products.
February 1999
1/16
ST24/25C04, ST24/25W04
Figure 2A. DIP Pin Connections
Figure 2B. SO Pin Connections
ST24x04
ST25x04
ST24x04
ST25x04
PRE
E1
1
2
3
4
8
V
PRE
E1
1
2
3
4
8
V
CC
MODE/WC
CC
7
MODE/WC
7
E2
6
5
SCL
E2
6
5
SCL
V
SDA
V
SDA
SS
SS
AI00852E
AI01107E
Table 2. Absolute Maximum Ratings (1)
Symbol
TA
Parameter
Value
Unit
°C
Ambient Operating Temperature
Storage Temperature
–40 to 125
–65 to 150
TSTG
°C
TLEAD
Lead Temperature, Soldering
(SO8 package)
(PSDIP8 package)
40 sec
10 sec
215
260
°C
VIO
Input or Output Voltages
Supply Voltage
–0.6 to 6.5
–0.3 to 6.5
4000
V
V
V
V
VCC
Electrostatic Discharge Voltage (Human Body model) (2)
Electrostatic Discharge Voltage (Machine model) (3)
VESD
500
Notes: 1. Except for the rating "Operating Temperature Range", stresses above those listed in the Table "Absolute Maximum Ratings"
may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other
conditions above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum
Rating conditions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and other
relevant quality documents.
2. MIL-STD-883C, 3015.7 (100pF, 1500 Ω).
3. EIAJ IC-121 (Condition C) (200pF, 0 Ω).
DESCRIPTION (cont’d)
carry a built-in 4 bit, unique device identification
code (1010) corresponding to the I2C bus defini-
tion. This is used together with 2 chip enable inputs
(E2, E1) so that up to 4 x 4K devices may be
attached to the I2C bus and selected individually.
The memories behave as a slave device in the I2C
protocol with all memory operations synchronized
by the serial clock. Read and write operations are
initiated by a START condition generated by the
bus master. The START condition is followed by a
stream of 7 bits (identification code 1010), plus one
read/write bit and terminated by an acknowledge
bit.
The ST24/25x04 are 4 Kbit electrically erasable
programmable memories (EEPROM), organized
as 2 blocks of 256 x8 bits. They are manufactured
in STMicroelectronics’s Hi-Endurance Advanced
CMOS technology which guarantees an endur-
ance of one million erase/write cycles with a data
retention of 40 years.
Both Plastic Dual-in-Line and Plastic Small Outline
packages are available.
The memories are compatible with the I2C stand-
ard, two wire serial interface which uses a bi-direc-
tional data bus and serial clock. The memories
2/16
ST24/25C04, ST24/25W04
Table 3. Device Select Code
Block
Select
Device Code
Chip Enable
RW
Bit
b7
1
b6
0
b5
1
b4
0
b3
b2
b1
b0
Device Select
E2
E1
A8
RW
Note: The MSB b7 is sent first.
Table 4. Operating Modes (1)
Mode
RW bit
MODE
Bytes
Initial Sequence
START, Device Select, RW = ’1’
Current Address Read
’1’
’0’
’1’
’1’
’0’
’0’
’0’
X
1
START, Device Select, RW = ’0’, Address,
reSTART, Device Select, RW = ’1’
Similar to Current or Random Mode
START, Device Select, RW = ’0’
START, Device Select, RW = ’0’
START, Device Select, RW = ’0’
Random Address Read
X
1
Sequential Read
Byte Write
X
X
1 to 512
1
4
8
Multibyte Write (2)
VIH
VIL
Page Write
Notes: 1. X = VIH or VIL
2. Multibyte Write not available in ST24/25W04 versions.
When writing data to the memory it responds to the
8 bits received by asserting an acknowledge bit
during the 9th bit time. When data is read by the
bus master, it acknowledges the receipt of the data
bytes in the same way. Data transfers are termi-
nated with a STOP condition.
with other open drain or open collector signals on
the bus. Aresistor must be connected fromthe SDA
bus line to VCC to act as pull up (see Figure 3).
Chip Enable (E1 - E2). These chip enable inputs
are used to set the 2 least significant bits (b2, b3)
of the 7 bit device select code. These inputs may
be driven dynamically or tied to VCC or VSS to
establish the device select code.
Power On Reset: VCC lock out write protect. In
order to prevent data corruption and inadvertent
write operations during power up, a Power On
Reset (POR) circuit is implemented. Until the VCC
voltage has reached the POR threshold value, the
internal reset is active, all operations are disabled
and the device will not respond to any command.
In the same way, when VCC drops down from the
operating voltage to below the POR threshold
value, all operations are disabled and the device
will not respond to any command. A stable VCC
must be applied before applying any logic signal.
Protect Enable (PRE). The PRE input pin, in ad-
dition to the status of the Block Address Pointer bit
(b2, location 1FFh as in Figure 7), sets the PRE
write protection active.
Mode (MODE). The MODE input is available on pin
7 (see also WC feature) and may be driven dynami-
cally. It must be at VIL or VIH for the Byte Write
mode, VIH for Multibyte Write mode or VIL for Page
Write mode. When unconnected, the MODE input
is internally read as VIH (Multibyte Write mode).
Write Control (WC). An hardware Write Control
feature (WC) is offered only for ST24W04 and
ST25W04 versions on pin 7. This feature is usefull
to protect the contents of the memory from any
erroneous erase/write cycle. The Write Control sig-
nal is used to enable (WC = VIH) or disable (WC =
VIL) the internal write protection. When uncon-
nected, the WC input is internally read as VIL and
the memory area is not write protected.
SIGNAL DESCRIPTIONS
Serial Clock (SCL). The SCL input pin is used to
synchronize all data in and out of the memory. A
resistor can be connected from the SCL line to VCC
to act as a pull up (see Figure 3).
Serial Data (SDA). The SDA pin is bi-directional
and is used to transfer data in or out of the memory.
It is an open drain output that may be wire-OR’ed
3/16
ST24/25C04, ST24/25W04
SIGNAL DESCRIPTIONS (cont’d)
Stop Condition. STOPis identified by a low to high
transition of the SDA line while the clock SCL is
stable in the high state. A STOP condition termi-
nates communication between the ST24/25x04
and the bus master. A STOP condition at the end
of a Read command, after and only after a No
Acknowledge, forces the standby state. A STOP
condition at the end of a Write command triggers
the internal EEPROM write cycle.
The devices with this Write Control feature no
longer support the Multibyte Write mode of opera-
tion, however all other write modes are fully sup-
ported.
Refer to the AN404 Application Note for more de-
tailed information about Write Control feature.
Acknowledge Bit (ACK). An acknowledge signal
is used to indicate a successfull data transfer. The
bus transmitter, either master or slave, will release
the SDAbus after sending 8 bits of data. During the
9th clock pulse period the receiver pulls the SDA
bus low to acknowledge the receipt of the 8 bits of
data.
DEVICE OPERATION
I2C Bus Background
The ST24/25x04 support the I2C protocol. This
protocol defines any device that sends data onto
the bus as a transmitter and any device that reads
the data as a receiver. The device that controls the
data transfer is known as the master and the other
as the slave. The master will always initiate a data
transfer and will provide the serial clock for syn-
chronisation. The ST24/25x04 are always slave
devices in all communications.
Data Input. During data input the ST24/25x04
sample the SDA bus signal on the rising edge of
the clock SCL. Note that for correct device opera-
tion the SDA signal must be stable during the clock
low to high transition and the data must change
ONLY when the SCL line is low.
Start Condition. START is identified by a high to
low transition of the SDA line while the clock SCL
is stable in the high state. A START condition must
precede any command for data transfer. Except
during a programming cycle, the ST24/25x04 con-
tinuously monitor the SDA and SCL signals for a
START condition and will not respond unless one
is given.
Memory Addressing. To start communication be-
tween the bus master and the slave ST24/25x04,
the master must initiate a STARTcondition. Follow-
ing this, the master sends onto the SDA bus line 8
bits (MSB first) corresponding to the device select
code (7 bits) and a READ or WRITE bit.
Figure 3. Maximum RL Value versus Bus Capacitance (CBUS) for an I2C Bus
20
V
CC
16
R
R
L
L
12
SDA
C
BUS
MASTER
SCL
8
4
C
BUS
V
= 5V
CC
0
100
200
(pF)
300
400
C
AI01100
BUS
4/16
ST24/25C04, ST24/25W04
Table 5. Input Parameters (1) (TA = 25 °C, f = 100 kHz )
Symbol
CIN
Parameter
Input Capacitance (SDA)
Test Condition
Min
Max
8
Unit
pF
CIN
Input Capacitance (other pins)
6
pF
ZWCL
ZWCH
WC Input Impedance (ST24/25W04)
WC Input Impedance (ST24/25W04)
V
V
IN ≤ 0.3 VCC
IN ≥ 0.7 VCC
5
20
kΩ
kΩ
500
Low-pass filter input time constant
(SDA and SCL)
tLP
100
ns
Note: 1. Sampled only, not 100% tested.
Table 6. DC Characteristics
(TA = 0 to 70°C, –20 to 85°C or –40 to 85°C; VCC = 3V to 5.5V or 2.5V to 5.5V)
Symbol
Parameter
Test Condition
Min
Max
Unit
ILI
Input Leakage Current
0V ≤ VIN ≤ VCC
±2
µA
0V ≤ VOUT ≤ VCC
ILO
Output Leakage Current
±2
µA
SDA in Hi-Z
V
CC = 5V, fC = 100kHz
Supply Current (ST24 series)
Supply Current (ST25 series)
2
1
mA
mA
µA
(Rise/Fall time < 10ns)
ICC
VCC = 2.5V, fC = 100kHz
V
IN = VSS or VCC
VCC = 5V
,
,
100
Supply Current (Standby)
(ST24 series)
ICC1
V
IN = VSS or VCC
300
5
µA
µA
µA
VCC = 5V, fC = 100kHz
V
IN = VSS or VCC
CC = 2.5V
,
V
Supply Current (Standby)
(ST25 series)
ICC2
V
IN = VSS or VCC
,
50
VCC = 2.5V, fC = 100kHz
VIL
VIH
Input Low Voltage (SCL, SDA)
Input High Voltage (SCL, SDA)
–0.3
0.3 VCC
VCC + 1
V
V
0.7 VCC
Input Low Voltage
VIL
VIH
–0.3
0.5
V
V
(E1-E2, PRE, MODE, WC)
Input High Voltage
(E1-E2, PRE, MODE, WC)
V
CC – 0.5
VCC + 1
Output Low Voltage (ST24 series)
Output Low Voltage (ST25 series)
IOL = 3mA, VCC = 5V
0.4
0.4
V
V
VOL
IOL = 2.1mA, VCC = 2.5V
5/16
ST24/25C04, ST24/25W04
Table 7. AC Characteristics
(TA = 0 to 70°C, –20 to 85°C or –40 to 85°C; VCC = 3V to 5.5V or 2.5V to 5.5V)
Symbol
tCH1CH2
tCL1CL2
tDH1DH2
tDL1DL1
Alt
tR
Parameter
Min
Max
1
Unit
µs
ns
Clock Rise Time
Clock Fall Time
Input Rise Time
Input Fall Time
tF
300
1
tR
µs
ns
tF
300
(1)
tCHDX
tSU:STA
tHIGH
tHD:STA
tHD:DAT
tLOW
tSU:DAT
tSU:STO
tBUF
tAA
Clock High to Input Transition
Clock Pulse Width High
4.7
4
µs
µs
µs
µs
µs
ns
tCHCL
tDLCL
tCLDX
tCLCH
tDXCX
tCHDH
tDHDL
Input Low to Clock Low (START)
Clock Low to Input Transition
Clock Pulse Width Low
4
0
4.7
250
4.7
4.7
0.3
300
Input Transition to Clock Transition
Clock High to Input High (STOP)
Input High to Input Low (Bus Free)
Clock Low to Next Data Out Valid
Data Out Hold Time
µs
µs
µs
ns
(2)
tCLQV
3.5
tCLQX
fC
tDH
fSCL
tWR
Clock Frequency
100
10
kHz
ms
(3)
tW
Write Time
Notes: 1. For a reSTART condition, or following a write cycle.
2. The minimum value delays the falling/rising edge of SDA away from SCL = 1 in order to avoid unwanted START and/or STOP
conditions.
3. In the Multibyte Write mode only, if accessed bytes are on two consecutive 8 bytes rows (6 address MSB are not constant) the
maximum programming time is doubled to 20ms.
AC MEASUREMENT CONDITIONS
DEVICE OPERATION (cont’d)
The 4 most significant bits of the device select code
are the device type identifier, corresponding to the
I2C bus definition. For these memories the 4 bits
are fixed as 1010b. The following 2 bits identify the
specific memory on the bus. They are matched to
the chip enable signals E2, E1. Thus up to 4 x 4K
memories can be connected on the same bus
giving a memory capacity total of 16 Kbits. After a
START condition any memory on the bus will iden-
tify the device code and compare the following 2
bits to its chip enable inputs E2, E1.
The 7th bit sent is the block number (one block =
256 bytes). The 8th bit sent is the read or write bit
(RW), this bit is set to ’1’ for read and ’0’ for write
operations. If a match is found, the corresponding
memory will acknowledge the identification on the
SDA bus during the 9th bit time.
Input Rise and Fall Times
Input Pulse Voltages
≤ 50ns
0.2VCC to 0.8VCC
Input and Output Timing Ref. Voltages 0.3VCC to 0.7VCC
Figure 4. AC Testing Input Output Waveforms
0.8V
CC
0.7V
CC
0.3V
CC
0.2V
CC
AI00825
6/16
ST24/25C04, ST24/25W04
Figure 5. AC Waveforms
tCHCL
tDLCL
tCLCH
SCL
tDXCX
tCHDH
SDA IN
tCHDX
tCLDX
SDA
tDHDL
START
CONDITION
SDA
STOP &
BUS FREE
INPUT CHANGE
SCL
tCLQV
tCLQX
DATA VALID
SDA OUT
DATA OUTPUT
SCL
tW
SDA IN
tCHDH
tCHDX
STOP
WRITE CYCLE
START
CONDITION
CONDITION
AI00795B
Write Operations
For the ST24/25W04 versions, any write command
with WC = 1 will not modify the memory content.
The Multibyte Write mode (only available on the
ST24/25C04 versions) is selected when the MODE
pin is at VIH and the Page Write mode when MODE
pin is at VIL. The MODE pin may be driven dynami-
cally with CMOS input levels.
Byte Write. In the Byte Write mode the master
sends one data byte, which is acknowledged by the
memory. The master then terminates the transfer
by generating a STOP condition. The Write mode
is independant of the state of the MODE pin which
could be left floating if only this mode was to be
used. However it is not a recommended operating
mode, as this pin has to be connected to either VIH
or VIL, to minimize the stand-by current.
Following a START condition the master sends a
device select code with the RW bit reset to ’0’. The
memory acknowledges this and waits for a byte
address. The byte address of 8 bits provides ac-
cess to one block of 256 bytes of the memory. After
receipt of the byte address the device again re-
sponds with an acknowledge.
7/16
ST24/25C04, ST24/25W04
Figure 6. I2C Bus Protocol
SCL
SDA
START
SDA
SDA
STOP
CONDITION
INPUT CHANGE
CONDITION
1
2
3
7
8
9
SCL
SDA
ACK
MSB
START
CONDITION
1
2
3
7
8
9
SCL
SDA
MSB
ACK
STOP
CONDITION
AI00792
Multibyte Write. For the Multibyte Write mode, the
MODE pin must be at VIH. The Multibyte Write
mode can be started from any address in the
memory. The master sends from one up to 4 bytes
of data, which are each acknowledged by the mem-
ory. The transfer is terminated by the master gen-
erating a STOP condition. The duration of the write
cycle is tW = 10ms maximum except when bytes
are accessed on 2 rows (that is have different
values for the 6 most significant address bits A7-
A2), the programming time is then doubled to a
maximum of 20ms. Writing more than 4 bytes in the
Multibyte Write mode may modify data bytes in an
adjacent row (one row is 8 bytes long). However,
the Multibyte Write can properly write up to 8
consecutive bytes as soon as the first address of
these 8 bytes is the first address of the row, the 7
following bytesbeing written in the 7 following bytes
of this same row.
Page Write. For the Page Write mode, the MODE
pin must be at VIL. The Page Write mode allows up
to 8 bytes to be written in a single write cycle,
provided that they are all located in the same ’row’
in the memory: that is the 5 most significant mem-
8/16
ST24/25C04, ST24/25W04
ory address bits (A7-A3) are the same inside one
block. The master sends from one up to 8 bytes of
data, which are each acknowledged by the mem-
ory. After each byte is transfered, the internal byte
address counter (3 least significant bits only) is
incremented. The transfer is terminated by the
master generating a STOPcondition. Care must be
taken to avoid address counter ’roll-over’ which
could result in data being overwritten. Note that, for
any write mode, the generation by the master of the
STOP condition starts the internal memory pro-
gram cycle. All inputs are disabled until the comple-
tion of this cycle and the memory will not respond
to any request.
Minimizing System Delays by Polling On ACK.
During the internal write cycle, the memory discon-
nects itself from the bus in order to copy the data
from the internal latches to the memory cells. The
maximum value of the write time (tW) is given in the
AC Characteristics table, since the typical time is
shorter, the time seen by the system may be re-
duced by an ACK polling sequence issued by the
master.
Figure 7. Memory Protection
Protect Location
8 byte
boundary
address
Protect Flag
Enable = 0
Disable = 1
b7
b3 b2
1FFh
100h
X
X
Block 1
Block 0
AI00855B
Figure 8. Write Cycle Polling using ACK
WRITE Cycle
in Progress
START Condition
DEVICE SELECT
with RW = 0
ACK
Returned
NO
First byte of instruction
with RW = 0 already
decoded by ST24xxx
YES
Next
Operation is
Addressing the
Memory
NO
YES
Send
Byte Address
ReSTART
STOP
Proceed
WRITE Operation
Proceed
Random Address
READ Operation
AI01099B
9/16
ST24/25C04, ST24/25W04
Figure 9. Write Modes Sequence (ST24/25C04)
ACK
ACK
ACK
ACK
ACK
BYTE WRITE
DEV SEL
BYTE ADDR
DATA IN
R/W
ACK
BYTE ADDR
MULTIBYTE
AND
DEV SEL
DATA IN 1
DATA IN 2
PAGE WRITE
R/W
ACK
ACK
DATA IN N
AI00793
DEVICE OPERATION (cont’d)
’0’. This Address Pointer can therefore address a
boundary in steps of 8 bytes.
The sequence is as follows:
– Initial condition: a Write isin progress (see Figure
8).
– Step 1: the Master issues a START condition
followed by a Device Select byte (1st byte of the
new instruction).
The sequence to use the Write Protected feature
is:
– write the data to be protected into the top of the
memory, up to, but not including, location 1FFh;
– set the protection by writing the correct bottom
boundary address in the Address Pointer (5
MSBs of location 1FFh) with bit b2 (Protect flag)
set to ’0’. Note that for a correct fonctionality of
the memory, all the 3 LSBs of the Block Address
Pointer must also be programmed at ’0’.
– Step 2: if the memory is busy with the internal
write cycle, no ACK will be returned and the
master goes back to Step 1. If the memory has
terminated the internal write cycle, it will re-
spond with an ACK, indicating that the memory
is ready to receive the second part of the next
instruction (the first byte of this instruction was
already sent during Step 1).
Write Protection. Data in the upper block of 256
bytes of the memory may be write protected. The
memory is write protected between a boundary
address and the top of memory (address 1FFh)
when the PRE input pin is taken high and when the
Protect Flag (bit b2 in location 1FFh) is set to ’0’.
The boundary address is user defined by writing it
in the Block Address Pointer. The Block Address
Pointer is an 8 bit EEPROM register located at the
address 1FFh. It is composed by 5 MSBs Address
Pointer, which defines the bottom boundary ad-
dress, and 3 LSBs which must be programmed at
The area will now be protected when the PRE input
pin is taken High. While the PRE input pin is read
at ’0’by the memory, the location 1FFh can be used
as a normal EEPROM byte.
Caution: Special attention must be used when
using the protect mode together with the Multibyte
Write mode (MODE input pin High). If the Multibyte
Write starts at the location right below the first byte
of the Write Protected area, then the instruction will
write over the first 3 bytes of the Write Protected
area. The area protected is therefore smaller than
the content defined in the location 1FFh, by3 bytes.
This does not apply to the Page Write mode as the
address counter ’roll-over’ and thus cannot go
above the 8 bytes lower boundary of the protected
area.
10/16
ST24/25C04, ST24/25W04
Figure 10. Write Modes Sequence with Write Control = 1 (ST24/25W04)
WC
ACK
ACK
ACK
BYTE WRITE
DEV SEL
BYTE ADDR
DATA IN
R/W
WC
ACK
ACK
ACK
PAGE WRITE
DEV SEL
BYTE ADDR
DATA IN 1
DATA IN 2
R/W
WC (cont'd)
ACK
ACK
PAGE WRITE
(cont'd)
DATA IN N
AI01101B
Read Operations
Random Address Read. A dummy write is per-
formed to load the address into the address
counter, see Figure 11. This is followed by another
START condition from the master and the byte
address is repeated with the RW bit set to ’1’. The
memory acknowledges this and outputs the byte
addressed. The master have to NOT acknowledge
the byte output, but terminates the transfer with a
STOP condition.
Sequential Read. This mode can be initiated with
either a Current Address Read or a Random Ad-
dress Read. However, in this case the master
DOES acknowledge the data byte output and the
memory continues to output the next byte in se-
quence. To terminate the stream of bytes, the
master must NOT acknowledge the last byte out-
Read operations are independentof the state of the
MODE pin. On delivery, the memory content is set
at all "1’s" (or FFh).
Current Address Read. The memory has an inter-
nal byte address counter. Each time a byte is read,
this counter is incremented. For the Current Ad-
dress Read mode, following a START condition,
the master sends a memory address with the RW
bit set to ’1’. The memory acknowledges this and
outputs the byte addressed by the internal byte
address counter. This counter is then incremented.
The master does NOT acknowledge the byte out-
put, but terminates the transfer with a STOP con-
dition.
11/16
ST24/25C04, ST24/25W04
DEVICE OPERATION (cont’d)
counter will ’roll- over’and the memory will continue
to output data.
put, but MUST generate a STOP condition. The
output data is from consecutive byte addresses,
with the internal byte address counter automat-
ically incremented after each byte output. After a
count of the last memory address, the address
Acknowledge in Read Mode. In all read modes
the ST24/25x04 wait foran acknowledgeduring the
9th bit time. If the master does not pull the SDAline
low during this time, the ST24/25x04 terminate the
data transfer and switches to a standby state.
Figure 11. Read Modes Sequence
ACK
NO ACK
CURRENT
ADDRESS
READ
DEV SEL
DATA OUT
R/W
ACK
ACK
ACK
NO ACK
DATA OUT
RANDOM
ADDRESS
READ
DEV SEL *
BYTE ADDR
DEV SEL *
R/W
R/W
ACK
ACK
ACK
NO ACK
SEQUENTIAL
CURRENT
READ
DEV SEL
DATA OUT 1
DATA OUT N
R/W
ACK
ACK
ACK
ACK
SEQUENTIAL
RANDOM
READ
DEV SEL *
BYTE ADDR
DEV SEL * DATA OUT 1
R/W
R/W
ACK
NO ACK
DATA OUT N
AI00794C
Note:
* The 7 Most Significant bits of DEV SEL bytes of a Random Read (1st byte and 3rd byte) must be identical.
12/16
ST24/25C04, ST24/25W04
ORDERING INFORMATION SCHEME
Example:
ST24C04
M
1
TR
Operating Voltage
Range
ST24C04
ST24W04
ST25C04
ST25W04
3V to 5.5V
3V to 5.5V
Standard
Hardware Write Control
2.5V to 5.5V Standard
2.5V to 5.5V Hardware Write Control
Package
Temperature Range
Option
B
PSDIP8
0.25mm Frame
1
0 to 70 °C
TR Tape & Reel
Packing
5
6
–20 to 85 °C
–40 to 85 °C
M
SO8 150mil Width
3 * –40 to 125 °C
Notes: 3 * Temperature range on special request only.
Parts are shipped with the memory content set at all "1’s" (FFh).
For a list of available options (Operating Voltage, Range, Package, etc...) or for further information on any
aspect of this device, please contact the STMicroelectronics Sales Office nearest to you.
13/16
ST24/25C04, ST24/25W04
PSDIP8 - 8 pin Plastic Skinny DIP, 0.25mm lead frame
mm
Min
3.90
0.49
3.30
0.36
1.15
0.20
9.20
–
inches
Min
Symb
Typ
Max
5.90
–
Typ
Max
0.232
–
A
A1
A2
B
0.154
0.019
0.130
0.014
0.045
0.008
0.362
–
5.30
0.56
1.65
0.36
9.90
–
0.209
0.022
0.065
0.014
0.390
–
B1
C
D
E
E1
e1
eA
eB
L
7.62
2.54
0.300
0.100
6.00
–
6.70
–
0.236
–
0.264
–
7.80
–
–
0.307
–
–
10.00
3.80
0.394
0.150
3.00
8
0.118
8
N
A2
A
L
A1
e1
B
C
eA
eB
B1
D
N
1
E1
E
PSDIP-a
Drawing is not to scale
14/16
ST24/25C04, ST24/25W04
SO8 - 8 lead Plastic Small Outline, 150 mils body width
mm
Min
1.35
0.10
0.33
0.19
4.80
3.80
–
inches
Min
Symb
Typ
Max
1.75
0.25
0.51
0.25
5.00
4.00
–
Typ
Max
0.069
0.010
0.020
0.010
0.197
0.157
–
A
A1
B
0.053
0.004
0.013
0.007
0.189
0.150
–
C
D
E
e
1.27
0.050
H
h
5.80
0.25
0.40
0°
6.20
0.50
0.90
8°
0.228
0.010
0.016
0°
0.244
0.020
0.035
8°
L
α
N
CP
8
8
0.10
0.004
h x 45˚
C
A
B
CP
e
D
N
1
E
H
A1
α
L
SO-a
Drawing is not to scale
15/16
ST24/25C04, ST24/25W04
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
© 1999 STMicroelectronics - All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
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16/16
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