START450 [STMICROELECTRONICS]

NPN Silicon RF Transistor; NPN硅晶体管RF
START450
型号: START450
厂家: ST    ST
描述:

NPN Silicon RF Transistor
NPN硅晶体管RF

晶体 晶体管
文件: 总7页 (文件大小:73K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
START450  
NPN Silicon RF Transistor  
COMPRESSION POINT P1dB=19dBm @ 1.8GHz  
TRANSITION FREQUENCY 42GHz  
HIGH LINEARITY  
ULTRA MINIATURE SOT343(SC70) PACKAGE  
SOT343 (SC70)  
ORDER CODE  
BRANDING  
START450TR  
450  
DESCRIPTION  
The START450 is a member of the START family that  
provide the state of the art of RF silicon process to the  
market. Manufacturated in the third generation of ST  
proprietary bipolar process, it offers the best mix of  
gain and NF for given breakdown voltage(BVceo).  
It offers performance level only archived with GaAs  
products before.  
APPLICATIONS  
LNA FOR GSM/DCS, DECT, PCS, PCN,  
CDMA, W-CDMA  
PREDRIVER FOR DECT  
GENERAL PURPOSE 500MHz-5GHz  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
4.5  
Unit  
V
V
Collector emitter voltage  
Collector base voltage  
Emitter base voltage  
Collector current  
ceo  
V
15  
V
cbo  
V
ebo  
1.5  
V
I
100  
mA  
mA  
mW  
c
I
Base current  
10  
b
P
Total dissipation, T = TBD  
450  
tot  
s
o
T
stg  
Storage temperature  
-65 to 150  
C
o
T
Max. operating junction temperature  
150  
j
C
ABSOLUTE MAXIMUM RATINGS  
o
R
thjs  
Thermal Resistance Junction soldering point  
MAX  
120  
C/W  
November, 20 2002  
1/7  
START450  
o
ELECTRICAL CHARACTERISTICS (T =25 C,unless otherwise specified)  
j
Symbol  
Parameter  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
I
Collector cutoff current  
Vcb = 5V, Ie = 0A  
150  
nA  
cbo  
Emitter-base cutoff  
current  
I
Veb = 1.5V, Ic = 0A  
15  
µA  
ebo  
Hfe  
NFmin  
Ga  
DC current gain  
Ic = 50mA, Vce = 4V  
160  
1.2  
Ic = 10mA, Vce = 2V, f = 1.8GHz,  
Minimim noise figure  
dB  
Z = Z opt  
s
s
NFmin associated gain  
Insertion power gain  
Maximum stable gain  
1dB compression point  
Ic = 10mA, Vce = 2V, f = 1.8GHz  
Ic = 50mA, Vce = 2V, f = 1.8GHz  
Ic = 50mA, Vce = 2V, f = 1.8GHz  
Ic = 50mA,Vce = 3V, f = 1.8GHz  
13  
13.7  
19.1  
19  
dB  
dB  
2
|S21|  
(1)  
dB  
Gms  
P
-1dB  
dBm  
Ouput third order  
intercept point  
OIP3  
Ic = 50mA,Vce = 3V, f = 1.8GHz  
29  
dBm  
Note(1): Gms = | S / S  
21  
|
12  
PIN CONNECTION  
PINOUT  
4
Pin No.  
Description  
BASE  
3
2
1
3
Top view  
COLLECTOR  
EMITTER  
1
2,4  
SOT343  
2/7  
START450  
SPICE PARAMETERS (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax)  
TRANSISTOR CHIP DATA  
Symbol  
TMEAS  
IS  
Value  
27.0  
Symbol  
FC  
Value  
0.8  
Symbol  
XJBC  
XTI  
Value  
0.3  
1.9E-16  
1.9E-12  
1
EG  
1.12  
1
4.51  
295  
40  
ISE  
NF  
BF  
NR  
NE  
2.658  
13.7  
VAF  
ISC  
3.19E-15  
BR  
VAR  
2.5  
o
{1.448*((T( C)+273.15)/  
IKF  
NC  
1.5  
TF  
3.1E-12  
300.15)^(-1.6)}  
TR  
XTF  
RB  
7E-10  
PTF  
ITF  
35  
4.8  
VTF  
MJE  
MJC  
MJS  
IKR  
27  
0.44  
20  
2.7  
RBM  
RE  
0.64  
0.15  
1.1  
0.31  
RC  
1.38  
0.281  
43.5E-3  
-0.32  
CJE  
CJC  
CJS  
1462E-15  
660E-15  
425E-15  
VJE  
VJC  
VJS  
0.84  
0.453  
XTB  
PACKAGE EQUIVALENT CIRCUIT  
C2  
C=21 fF  
L4  
B’  
C’  
L3  
L5  
L6  
.
B
.
.
.
C
L=0.3 nH  
L=0.8 nH  
L=0.1 nH  
L=0.3 nH  
E’  
L=0.15 nH  
L1  
C1  
C3  
.
C=740 fF  
C=785 fF  
L2 L=0.05 nH  
.
E
In order to avoid high complexity of the package equivalent circuit, the two emitter leads of SOT-343  
package are combined in one electrical connection.  
FOR MORE ACCURACY SIMULATION IN SATURATION REGION :  
Adding the 5 Spice parameters showed in Table A and using ST Spice Library (available on request) you  
can achieve a more accuracy simulation in the saturation region. ST Spice library is compatible with  
following simulators: ELDO MENTOR (any version), SPECTRE CADENCE (any version), ADS (version  
2001 only).  
Table A (Spice Parameters extracted in saturation region)  
RW  
Vjj  
ENP  
VRP  
RP  
2.594  
0.769  
2.45  
{4.64*((TEMPER+273.15)/300.15)^(1.5)}  
1.00E-6  
3/7  
START450  
COMMON EMITTER S-PARAMETERS ( V = 2V, I = 50mA )  
CE  
C
IS11I  
IS21I  
IS12I  
S12  
50  
Φ
IS22I  
S22  
Φ
S11  
Φ
FREQ  
(MHz)  
0.1  
0.5  
0.9  
1
S21 Φ  
0.572  
0.740  
0.747  
0.744  
0.726  
0.715  
0.699  
0.646  
0.582  
0.523  
0.441  
-112  
-167  
-178  
179  
172  
167  
165  
158  
153  
150  
153  
61.291  
17.769  
9.937  
8.736  
5.913  
4.893  
4.484  
3.661  
2.879  
2.195  
1.733  
137  
111  
113  
114  
125  
128  
131  
139  
146  
154  
175  
0.017  
0.022  
0.026  
0.025  
0.059  
0.060  
0.086  
0.128  
0.145  
0.189  
0.211  
0.723  
0.545  
0.539  
0.534  
0.526  
0.520  
0.510  
0.481  
0.452  
0.449  
0.381  
-75  
60  
93  
-149  
-163  
-166  
-171  
-173  
-175  
-174  
-173  
-173  
-178  
103  
146  
157  
163  
172  
177  
170  
151  
1.5  
1.8  
2
2.5  
3
3.5  
4
4/7  
START450  
TAPE & REEL DIMENSIONS  
mm  
MIN.  
178.5  
12.8  
20.2  
54.5  
TYP.  
179  
MAX  
A
C
179.5  
13.5  
13.0  
D
N
55  
55.5  
14.4  
T
Ao  
Bo  
Ko  
Po  
P
2.25  
2.7  
1.2  
3.8 (cumulative 10 Po)  
4.0  
4.0  
4.2 (cumulative 10 Po)  
DEVICE ORIENTATION  
TOP VIEW  
END VIEW  
450  
450  
450  
450  
5/7  
START450  
PACKAGE DIMENSIONS SOT343 (SC-70 4 leads)  
1.30  
1.15-1.35  
2.00-2.20  
1.15  
0.55-0.65  
1.90-2.10  
1.15-1.35  
0.80-1.00  
0.45  
0.25-0.35  
0.00-0.10  
0.10-0.20  
6/7  
START450  
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences  
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted  
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject  
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not  
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.  
The ST logo is registered trademark of STMicroelectronics  
2002 STMicroelectronics - All Rights Reserved  
All other names are the property of their respective owners.  
STMicroelectronics GROUP OF COMPANIES  
Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -  
Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.  
http://www.st.com  
7/7  

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