START540 [STMICROELECTRONICS]

NPN Silicon RF Transistor; NPN硅晶体管RF


型号：	START540
厂家：	ST
描述：	NPN Silicon RF Transistor NPN硅晶体管RF 晶体晶体管
文件：	总7页 (文件大小：73K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

START540

NPN Silicon RF Transistor

• LOW NOISE FIGURE: NFmin = 0.9dB

@ 1.8GHz, 5mA, 2V

• HIGH OUTPUT IP3 = 24dBm

@ 1.8GHz, 20mA, 2V

• GOOD RUGGEDNESS BVceo = 4.5V

• TRANSITION FREQUENCY 45GHz

• ULTRA MINIATURE SOT343 PACKAGE

SOT343 (SC70)

ORDER CODE

BRANDING

START540TR

540

DESCRIPTION

APPLICATIONS

The START540 is a member of the START family

that provide the market with the state of the art of RF

silicon process. Manufacturated in the third

generation of ST proprietary bipolar process, it

offers the highest linearity with excellent Noise

Figure for 4.5V breakdown voltage(BVceo).

It reaches performance level only achieved with

GaAs products before.

• LNA FOR GSM/DCS, DECT, PDC, PCS,

PCN, CDMA, W-CDMA

• GENERAL PURPOSE 500MHz-5GHz

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

Collector emitter voltage

Collector base voltage

Emitter base voltage

Collector current

4.5

ceo

cbo

ebo

1.5

Base current

Total dissipation, T = 101

180

tot

stg

Storage temperature

-65 to 150

Max. operating junction temperature

150

ABSOLUTE MAXIMUM RATINGS

thjs

Thermal Resistance Junction soldering point

270

C/W

July, 3 2002

1/7

START540

ELECTRICAL CHARACTERISTICS (T =25 C,unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Collector cutoff current

Vcb = 5V, Ie = 0A

150

cbo

Emitter-base cutoff

current

Veb = 1.5V, Ic = 0A

µA

ebo

Hfe

NFmin

DC current gain

Ic = 20mA, Vce = 3V

100

160

0.9

Ic = 5mA, Vce = 2V, f = 1.8GHz,

Minimim noise figure

Z = Z opt

NFmin associated gain

Insertion power gain

Maximum stable gain

1dB compression point

Ic = 5mA, Vce = 2V, f = 1.8GHz

Ic = 20mA, Vce = 2V, f = 1.8GHz

Ic = 20mA,Vce = 2V, f = 1.8GHz

19.5

22.7

|S21|

(1)

Gms

-1dB

dBm

Ouput third order

intercept point

OIP3

Ic = 20mA,Vce = 2V, f = 1.8GHz

dBm

Note(1): Gms = | S / S

PINOUT

PIN CONNECTION

Pin No.

Description

BASE

Top view

COLLECTOR

EMITTER

SOT343

2,4

2/7

START540

COMMON EMITTER S-PARAMETERS ( V = 2V, I = 20mA )

GHz

0.1

0.5

0.9

MAG

0.699

0.545

0.480

0.476

0.483

0.494

0.503

0.513

0.533

0.551

0.559

ANG

-21.6

MAG

42.32

27.82

18.42

16.86

11.63

9.63

ANG

164.0

119.9

98.1

94.0

76.9

68.2

63.1

53.6

45.9

36.6

28.3

MAG

0.009

0.027

0.036

0.038

0.048

0.052

0.055

0.061

0.069

0.077

0.085

ANG

88.9

58.1

48.1

47.2

41.6

38.8

36.7

31.7

26.7

21.2

13.7

MAG

0.942

0.642

0.431

0.397

0.272

0.220

0.193

0.148

0.142

0.153

0.154

ANG

-12.2

-89.7

-50.6

-130.0

-137.4

-166.9

179.6

172.2

157.6

147.8

139.6

133.8

-70.6

-74.7

1.5

1.8

-96.2

-110.7

-123.3

-154.4

-171.4

177.9

162.7

8.49

2.5

6.46

5.34

3.5

4.54

3.87

COMMON EMITTER S-PARAMETERS ( V = 2V, I = 5mA )

GHz

0.5

0.9

MAG

0.816

0.715

0.695

0.620

0.589

0.581

0.570

0.572

0.585

0.592

ANG

-50.5

MAG

14.56

11.92

11.32

8.64

7.39

6.66

5.87

4.37

3.74

3.20

ANG

140.8

118.2

113.2

91.5

80.9

74.5

8.0

MAG

0.038

0.058

0.061

0.075

0.080

0.082

0.085

0.090

0.094

ANG

65.8

48.4

45.0

30.9

23.8

19.3

14.8

5.7

MAG

0.879

0.720

0.685

0.515

0.425

0.374

0.316

0.225

0.208

0.184

ANG

-30.3

-49.0

-53.1

-71.9

-81.8

-88.4

-96.8

-166.8

-128.4

-141.2

-84.6

-92.5

1.5

1.8

-128.0

-145.6

-156.1

-167.6

167.6

155.3

146.1

2.5

51.7

40.4

30.6

3.5

1.1

-5.0

COMMON EMITTER NOISE-PARAMETERS ( V = 2V, I = 5mA )

min

Γ_opt

GHz

1.8

MAG

0.39

0.48

0.46

0.39

0.32

ANG

100.8

115.2

136.8

163

Ω

0.91

0.96

1.01

1.14

1.3

6.4

6.38

5.94

5.6

5.2

0.128

0.127

0.118

0.112

0.104

0.1

17.38

16.47

14.35

12.82

11.46

10.12

1.12

1.22

1.34

1.38

1.42

1.66

2.5

3.5

-160

1.4

-122.4

3/7

START540

SPICE PARAMETERS (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax)

TRANSISTOR CHIP DATA

Symbol

TMEAS

Value

27.0

Symbol

Value

0.66

1.12

Symbol

XJBC

XTI

Value

0.53

3.76

320

1.00E-16

1.58E-11

ISE

3.27

9.52

VAF

ISC

1.55E-15

VAR

2.3

{0.217*((T( C)+273.15)/

IKF

1.495

3.0E-12

300.15)^(-1.63)}

XTF

7E-10

PTF

ITF

32.0

0.498

2.94

0.42

1.03

0.6

VTF

MJE

MJC

MJS

IKR

27.9

0.497

0.292

0.245

8.32E-3

-0.54

9.84

10.8

RBM

3.77

CJE

CJC

CJS

421E-15

160E-15

112E-15

VJE

VJC

VJS

XTB

0.4

PACKAGE EQUIVALENT CIRCUIT

C=66 fF

L3 B’

C’ L5

L=0.3 nH

Transistor

Chip

L=0.6 nH

L=0.35 nH

L=0.6 nH

E’

L=0.1 nH

C=436 fF

C=334 fF

L2 L=0.05 nH

In order to avoid high complexity of the package equivalent circuit, the two emitter leads of SOT-343

package are combined in one electrical connection.

FOR MORE ACCURACY SIMULATION IN SATURATION REGION :

Adding the 5 Spice parameters showed in Table A and using ST Spice Library (available on request) you

can achieve a more accuracy simulation in the saturation region. ST Spice library is compatible with

following simulators: ELDO MENTOR (any version), SPECTRE CADENCE (any version), ADS (version

2001 only).

Table A Table A (Spice Parameters extracted in saturation region)

Vjj

ENP

VRP

1.173

0.8

2.085

{4.12*((TEMPER+273.15)/300.15)^(0.303)}

1.00E-6

4/7

START540

TAPE & REEL DIMENSIONS

MIN.

178.5

12.8

20.2

54.5

TYP.

179

MAX

179.5

13.5

13.0

55.5

14.4

2.25

2.7

1.2

3.8 (cumulative 10 Po)

4.0

4.2 (cumulative 10 Po)

DEVICE ORIENTATION

TOP VIEW

END VIEW

540

5/7

START540

PACKAGE DIMENSIONS SOT343 (SC-70 4 leads)

1.30

1.15-1.35

2.00-2.20

1.15

0.55-0.65

1.90-2.10

1.15-1.35

0.80-1.00

0.45

0.25-0.35

0.00-0.10

0.10-0.20

6/7

START540

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences

of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted

by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject

to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not

authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

The ST logo is registered trademark of STMicroelectronics

All other names are the property of their respective owners.

STMicroelectronics GROUP OF COMPANIES

Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -

Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.

http://www.st.com

7/7

相关型号：