STB10NK60ZT4 [STMICROELECTRONICS]
N-channel 600V - 0.65OHM - 10A - I2/D2PAK - TO-220/FP - TO-247 Zener-protected SuperMESH TM Power MOSFET; N沟道600V - 0.65OHM - 10A - I2 / D2PAK - TO- 220 / FP - TO- 247齐纳保护超网TM功率MOSFET
| 型号： | STB10NK60ZT4 |
| 厂家： | 
ST |
| 描述： | N-channel 600V - 0.65OHM - 10A - I2/D2PAK - TO-220/FP - TO-247 Zener-protected SuperMESH TM Power MOSFET |
| 文件： | 总19页 (文件大小：409K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STB10NK60Z/-1 - STP10NK60Z/FP
STW10NK60Z
N-CHANNEL 600V-0.65Ω-10A - TO220/FP-D²/I²PAK-TO-247
Zener-Protected SuperMESH™ MOSFET
General features
Package
V
R
I
D
Type
Pw
DSS
DS(on)
STB10NK60Z
600 V <0.75 Ω
10 A
10 A
10 A
10 A
10 A
115
115
35
3
3
STB10NK60Z-1 600 V <0.75 Ω
STP10NK60ZFP 600 V <0.75 Ω
2
2
3
1
1
2
1
TO-220
TO-220FP
STP10NK60Z
600 V <0.75 Ω
115
156
TO-247
STW10NK60Z 600 V <0.75 Ω
3
1
■ TYPICAL R
= 0.65 Ω
DS(on)
3
2
1
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ GATE CHARGE MINIMIZED
D²PAK
I²PAK
Internal schematic diagram
■ VERY LOW INTRINSIC CAPACITANCES
■ VERY GOOD MANUFACTURING
REPEABILITY
Description
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.
Such series complements ST full range of high
voltage
MOSFETs
including
revolutionary
MDmesh™ products.
Applications
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ IDEAL FOR OFF-LINE POWER SUPPLIES,
ADAPTOR AND PFC
■ LIGHTING
Rev 1
1/19
July 2005
www.st.com
19
1 Absolute maximum ratings
STB10NK60Z/-1 - STP10NK60Z/FP - STW10NK60Z
1
Absolute maximum ratings
Table 1.
Symbol
Absolute maximum ratings
Parameter
Value
Unit
TO-220/D²/I²PAK TO-220FP
TO-247
V
Drain-Source Voltage (V = 0)
600
600
± 30
V
V
V
DS
GS
V
Drain-gate Voltage (R = 20kΩ)
DGR
GS
V
Gate-Source Voltage
GS
10
(Note 3)
I
Drain Current (continuous) at T = 25°C
10
10
A
A
D
C
5.7
I
Drain Current (continuous) at T = 100°C
5.7
5.7
D
C
(Note 3)
I
36
(Note 3)
DM
Drain Current (pulsed)
36
36
A
Note 2
P
Total Dissipation at T = 25°C
115
35
156
W
W/°C
V
TOT
C
Derating Factor
0.92
0.28
1.25
Vesd(G-S) G-S ESD (HBM C=100pF, R=1.5kΩ)
4000
4.5
2500
-55 to 150
dv/dt
Peak Diode Recovery voltage slope
V/ns
V
Note 1
V
Insulation Withstand Volatge (DC)
--
--
ISO
T
Operating Junction Temperature
Storage Temperature
j
°C
T
stg
Table 2.
Thermal data
TO-220
I²PAK
D²PAK TO-220FP TO-247
Unit
Rthj-case Thermal Resistance Junction-case Max
1.09
3.6
0.8
°C/W
°C/W
°C/W
°C
Thermal Resistance Junction-pcb Max
Rthj-pcb
60
(when mounted on minimum Footprint)
Rthj-amb
Thermal Resistance Junction-amb Max
62.5
50
Maximum Lead Temperature For Soldering
Purpose
T
300
l
2/19
STB10NK60Z/-1 - STP10NK60Z/FP - STW10NK60Z
1 Absolute maximum ratings
Table 3.
Symbol
Avalanche characteristics
Parameter
Max Value
Unit
Avalanche Current, repetitive or
Not-Repetitive (pulse width limited by Tj max)
I
9
A
AR
Single Pulse Avalanche Energy
E
300
3.5
mJ
mJ
AS
AR
(starting Tj=25°C, I =I , V = 50V)
D
AR
DD
Repetitive Avalanche Energy
(pulse width limited by Tj max)
E
Table 4.
Symbol
Gate-source zener diode
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Igs=±1mA
Gate-Source
Breakdown Voltage
BV
30
V
GSO
(Open Drain)
1.1
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER
DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the
device’s ESD capability, but also to make them safely absorb possible voltage transients that
may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
3/19
2 Electrical characteristics
STB10NK60Z/-1 - STP10NK60Z/FP - STW10NK60Z
2
Electrical characteristics
(T
= 25 °C unless otherwise specified)
CASE
Table 5.
On/Off
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Drain-Source Breakdown
Voltage
V
I = 250µA, V = 0
600
V
(BR)DSS
D
GS
Zero Gate Voltage Drain
1
I
V
= Max Rating,
µA
µA
DSS
DS
GS
Current (V = 0)
50
GS
Gate Body Leakage Current
I
V
= ±15V, V = 0
±10
GSS
DS
(V = 0)
DS
V
V
V
= V , I = 250 µA
Gate Threshold Voltage
3
3.75
0.65
4.5
V
GS(th)
DS
GS
D
Static Drain-Source On
Resistance
R
= 10 V, I = 20 A
0.75
Ω
DS(on)
GS
D
Table 6.
Symbol
Dynamic
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
Note 4
V
=15V, I = 4.5A
Forward Transconductance
7.8
S
fs
DS
DS
D
C
C
iss
Input Capacitance
1370
156
37
pF
pF
pF
V
=25V, f=1 MHz, V =0
Output Capacitance
oss
GS
Reverse Transfer Capacitance
C
rss
C
oss eq.
V
=0, V =0V to 480V
Equivalent Ouput Capacitance
90
pF
GS
DS
Note 5
Q
V
V
=480V, I = 8A
g
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
50
10
25
70
nC
nC
nC
DD
GS
D
Q
=10V
gs
Q
(see Figure 19)
gd
Table 7.
Symbol
Switching on/off
Parameter
Test Conditions
=300 V, I =4A,
Min.
Typ.
Max.
Unit
V
DD
D
t
Turn-on Delay Time
Rise Time
20
20
ns
ns
d(on)
R =4.7Ω, V =10V
G
GS
t
r
(see Figure 20)
=300 V, I =4A,
V
DD
D
t
Turn-off Delay Time
Fall Time
55
30
ns
ns
d(off)
R =4.7Ω, V =10V
G
GS
t
f
(see Figure 20)
=480 V, I =8A,
t
V
r(Voff)
Off-voltage Rise Time
Fall Time
18
18
36
ns
ns
ns
DD
D
t
R =4.7Ω, V =10V
f
G
GS
Cross-over Time
t
(see Figure 20)
c
4/19
STB10NK60Z/-1 - STP10NK60Z/FP - STW10NK60Z
2 Electrical characteristics
Table 8.
Symbol
Source drain diode
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
Source-drain Current
10
36
A
A
SD
I
Note 2 Source-drain Current (pulsed)
SDM
V
Note 4
I
I
=10A, V =0
Forward on Voltage
1.6
V
SD
SD
GS
t
rr
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
570
4.3
15
ns
µC
A
=8A, di/dt = 100A/µs,
SD
Q
rr
V
=40 V, Tj=150°C
DD
I
RRM
(1) ISD ≤10A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
(2) Pulse width limited by safe operating area
(3) Limited only by maximum temperature allowed
(4) Pulsed: pulse duration = 300µs, duty cycle 1.5%
(5) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0
to 80%
5/19
2 Electrical characteristics
STB10NK60Z/-1 - STP10NK60Z/FP - STW10NK60Z
2.1
Typical characteristics
Figure 1. Safe Operating Area for
TO-220/D²/I²PAK
Figure 2. Thermal Impedanc for
TO-220/D²/I²PAK
Figure 3. Safe Operating Area for TO-220FP
Figure 4. Thermal Impedance for TO-220FP
Figure 5. Safe Operating Area for TO-247
Figure 6. Thermal Impedance for TO-247
6/19
STB10NK60Z/-1 - STP10NK60Z/FP - STW10NK60Z
2 Electrical characteristics
Figure 7. Output Characteristics
Figure 8. Transfer Characteristics
Figure 9. Transconductance
Figure 10. Static Drain-Source on Resistance
Figure 11. Gate Charge vs Gate -Source
Voltage
Figure 12. Capacitance Variations
7/19
2 Electrical characteristics
STB10NK60Z/-1 - STP10NK60Z/FP - STW10NK60Z
Figure 13. Normalized Gate Threshold Voltage Figure 14. Normalized on Resistance vs
vs Temperatute
Temperature
Figure 15. Source-drain Diode Forward
Characteristics
Figure 16. Normalized BVDSS vs Temperature
Figure 17. Maximum Avalanche Energy vs
Temperature
8/19
STB10NK60Z/-1 - STP10NK60Z/FP - STW10NK60Z
3 Test circuits
3
Test circuits
Figure 18. Switching Times Test Circuit For
Resistive Load
Figure 19. Gate Charge Test Circuit
Figure 20. Test Circuit For Indictive Load
Switching and Diode Recovery
Times
9/19
4 Package mechanical data
STB10NK60Z/-1 - STP10NK60Z/FP - STW10NK60Z
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in compliance
with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also
marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are
available at: www.st.com
10/19
STB10NK60Z/-1 - STP10NK60Z/FP - STW10NK60Z
4 Package mechanical data
TO-220FP MECHANICAL DATA
mm.
TYP
inch
TYP.
DIM.
MIN.
4.4
MAX.
4.6
2.7
2.75
0.7
1
MIN.
0.173
0.098
0.098
0.017
0.030
0.045
0.045
0.195
0.094
0.393
MAX.
0.181
0.106
0.108
0.027
0.039
0.067
0.067
0.204
0.106
0.409
A
B
2.5
D
2.5
E
0.45
0.75
1.15
1.15
4.95
2.4
F
F1
F2
G
1.7
1.7
5.2
2.7
10.4
G1
H
10
L2
L3
L4
L5
L6
L7
Ø
16
0.630
28.6
9.8
2.9
15.9
9
30.6
10.6
3.6
1.126
.0385
0.114
0.626
0.354
0.118
1.204
0.417
0.141
0.645
0.366
0.126
16.4
9.3
3
3.2
L3
L6
L7
1
2 3
L5
L2
L4
11/19
4 Package mechanical data
STB10NK60Z/-1 - STP10NK60Z/FP - STW10NK60Z
TO-220 MECHANICAL DATA
mm.
TYP
inch
TYP.
DIM.
MIN.
4.40
0.61
1.15
0.49
15.25
10
MAX.
4.60
0.88
1.70
0.70
15.75
10.40
2.70
5.15
1.32
6.60
2.72
14
MIN.
0.173
0.024
0.045
0.019
0.60
MAX.
0.181
0.034
0.066
0.027
0.620
0.409
0.106
0.202
0.052
0.256
0.107
0.551
0.154
A
b
b1
c
D
E
0.393
0.094
0.194
0.048
0.244
0.094
0.511
0.137
e
2.40
4.95
1.23
6.20
2.40
13
e1
F
H1
J1
L
L1
L20
L30
øP
Q
3.50
3.93
16.40
28.90
0.645
1.137
3.75
2.65
3.85
2.95
0.147
0.104
0.151
0.116
12/19
STB10NK60Z/-1 - STP10NK60Z/FP - STW10NK60Z
4 Package mechanical data
D2PAK MECHANICAL DATA
mm.
inch
TYP.
DIM.
MIN.
4.4
TYP
MAX.
4.6
MIN.
0.173
0.098
0.001
0.027
0.044
0.017
0.048
0.352
MAX.
0.181
0.106
0.009
0.036
0.067
0.023
0.053
0.368
A
A1
A2
B
2.49
0.03
0.7
2.69
0.23
0.93
1.7
B2
C
1.14
0.45
1.23
8.95
0.6
C2
D
1.36
9.35
D1
E
8
0.315
0.334
10
10.4
0.393
E1
G
8.5
4.88
15
5.28
15.85
1.4
0.192
0.590
0.050
0.055
0.094
0.208
0.625
0.055
0.068
0.126
L
L2
L3
M
1.27
1.4
1.75
3.2
2.4
R
0.4
0.015
V2
0º
4º
1
13/19
4 Package mechanical data
STB10NK60Z/-1 - STP10NK60Z/FP - STW10NK60Z
2
TO-262 (I PAK) MECHANICAL DATA
mm.
TYP
inch
TYP.
DIM.
MIN.
4.40
2.40
0.61
1.14
0.49
1.23
8.95
2.40
4.95
10
MAX.
4.60
2.72
0.88
1.70
0.70
1.32
9.35
2.70
5.15
10.40
14
MIN.
0.173
0.094
0.024
0.044
0.019
0.048
0.352
0.094
0.194
0.393
0.511
0.137
0.050
MAX.
0.181
0.107
0.034
0.066
0.027
0.052
0.368
0.106
0.202
0.410
0.551
0.154
0.055
A
A1
b
b1
c
c2
D
e
e1
E
L
13
L1
L2
3.50
1.27
3.93
1.40
14/19
STB10NK60Z/-1 - STP10NK60Z/FP - STW10NK60Z
4 Package mechanical data
TO-247 MECHANICAL DATA
mm.
TYP
inch
TYP.
DIM.
MIN.
4.85
2.20
1.0
MAX.
5.15
MIN.
0.19
MAX.
0.20
A
A1
b
2.60
0.086
0.039
0.079
0.118
0.015
0.781
0.608
0.102
0.055
0.094
0.134
0.03
1.40
b1
b2
c
2.0
2.40
3.0
3.40
0.40
19.85
15.45
0.80
D
20.15
15.75
0.793
0.620
E
e
5.45
18.50
5.50
0.214
0.728
0.216
L
14.20
3.70
14.80
4.30
0.560
0.14
0.582
0.17
L1
L2
øP
øR
S
3.55
4.50
3.65
5.50
0.140
0.177
0.143
0.216
15/19
5 Packing mechanical data
STB10NK60Z/-1 - STP10NK60Z/FP - STW10NK60Z
5
Packing mechanical data
2
D PAK FOOTPRINT
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
mm
MIN. MAX. MIN. MAX.
330 12.992
inch
DIM.
A
B
C
D
G
N
T
1.5
12.8
20.2
24.4
100
0.059
13.2 0.504 0.520
0795
26.4 0.960 1.039
3.937
30.4
1.197
BASE QTY
BULK QTY
1000
TAPE MECHANICAL DATA
1000
mm
inch
DIM.
MIN. MAX. MIN. MAX.
10.5 10.7 0.413 0.421
15.7 15.9 0.618 0.626
A0
B0
D
1.5
1.6 0.059 0.063
D1
E
1.59 1.61 0.062 0.063
1.65 1.85 0.065 0.073
F
11.4
4.8
3.9
11.9
1.9
50
11.6 0.449 0.456
5.0 0.189 0.197
4.1 0.153 0.161
12.1 0.468 0.476
2.1 0.075 0.082
1.574
K0
P0
P1
P2
R
T
0.25 0.35 0.0098 0.0137
23.7 24.3 0.933 0.956
W
* on sales type
16/19
STB10NK60Z/-1 - STP10NK60Z/FP - STW10NK60Z
6 Order codes
6
Order codes
Sales Type
Marking
Package
Packaging
STB10NK60Z-1
STB10NK60ZT4
STP10NK60ZFP
STP10NK60Z
B10NK60Z-1
B10NK60Z
I²PAK
D²PAK
TUBE
TAPE & REEL
TUBE
P10NK60ZFP
P10NK60Z
TO-220FP
TO-220
TO-247
TUBE
STW10NK60Z
W10NK60Z
TUBE
17/19
7 Revision History
STB10NK60Z/-1 - STP10NK60Z/FP - STW10NK60Z
7
Revision History
Date
Revision
Changes
26-Jul-2005
2
Inserted Ecopack indication
18/19
STB10NK60Z/-1 - STP10NK60Z/FP - STW10NK60Z
7 Revision History
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics.
All other names are the property of their respective owners
© 2005 STMicroelectronics - All rights reserved
STMicroelectronics group of companies
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -
Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America
www.st.com
19/19
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