STB13007DT4 [STMICROELECTRONICS]
High voltage fast-switching NPN power transistor; 高压快速开关NPN功率晶体管
| 型号： | STB13007DT4 |
| 厂家： | 
ST |
| 描述： | High voltage fast-switching NPN power transistor |
| 文件： | 总10页 (文件大小：233K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STB13007DT4
High voltage fast-switching NPN power transistor
General features
■ Improved specification: Lower leakage current,
Tighter gain range, DC current gain
preselection, Tighter storage time range
■ High voltage capability
■ Integrated free-wheeling diode
■ Low spread of dynamic parameters
■ Minimum lot-to-lot spread for reliable operation
■ Very high switching speed
■ Fully characterized at 125 °C
■ Large RBSOA
3
1
2
D PAK
(T0-263)
■ In compliance with the 2002/93/EC European
Directive
Internal schematic diagram
Description
The device is manufactured using high voltage
Multi-Epitaxial Planar technology for high
switching speeds and medium voltage capability.
It uses a Cellular Emitter structure to enhance
switching speeds.
Applications
■ Electronic transformers for halogen lamps
■ Switch mode power supplies
Order codes
Part Number
Marking
Package
Packing
2
STB13007DT4
B13007D
Tape & Reel
D PAK
June 2006
Rev 1
1/10
www.st.com
10
STB13007DT4
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
2.2
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
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STB13007DT4
Electrical ratings
1
Electrical ratings
Table 1.
Symbol
Absolute maximum rating
Parameter
Value
Unit
V
Collector-emitter voltage (V = -1.5V)
700
400
9
V
V
CEV
BE
V
Collector-emitter voltage (I = 0)
CEO
B
V
Emitter-base voltage (I = 0)
V
EBO
C
I
Collector current
8
A
C
I
Collector peak current (t < 5ms)
16
A
CM
P
I
Base current
4
A
B
I
Base peak current (t < 5ms)
8
80
A
BM
P
P
Total dissipation at T = 25°C
W
°C
°C
tot
c
T
Storage temperature
-65 to 150
150
stg
T
Max. operating junction temperature
J
Table 2.
Symbol
Thermal data
Parameter
Value
Unit
R
Thermal resistance junction-case
Thermal resistance junction-amb
__max
__max
1.56
62.5
°C/W
°C/W
thj-case
R
thj-amb
3/10
Electrical characteristics
STB13007DT4
2
Electrical characteristics
(T
= 25°C unless otherwise specified)
case
Table 3.
Symbol
Electrical characteristics
Parameter
Test Conditions
Min. Typ. Max. Unit
V
V
=700V
Collector cut-off current
CE
CE
10
µA
mA
I
CES
(V =0V)
=700V
T =100°C
0.5
BE
c
Collector cut-off current
I
V
V
=400V
100
100
µA
µA
CEO
EBO
CE
EB
(I =0)
B
Emitter cut-off current
I
=9V
(I =0)
C
Collector-emitter
sustaining voltage
(1)
I =10mA
400
V
V
C
CEO(sus)
(I = 0)
B
I = 2A _ _ _ I = 0.4A
0.8
1.5
2
V
V
V
V
C
B
I = 5 A __ _ I = 1A
C
B
(1)
Collector-emitter
saturation voltage
V
CE(sat)
I = 8 A __ _ I = 2A
C
B
I = 5 A __ _ I = 1A
3
C
B
T =100°C
c
I = 2A _ _ _ I = 0.4A
1.2
1.6
1.5
V
V
V
C
B
I = 5A
__ _ I = 1A
C
B
Base-emitter saturation
voltage
(1)
V
BE(sat)
I = 5A
__ _ I = 1A
C
B
T =100°C
c
18
8
40
25
I = 2A _ _V = 5V
C
CE
h
DC current gain
FE
I = 5A
_V = 5V
C
CE
V
Diode forward voltage
I = 3A
2.5
V
f
C
I = 5A ___ V
= 250V
= -5V
C
Clamp
V
BE(off)
Inductive load
Storage time
Fall time
I
= 1A
B1
t
1.7
90
2.3
µs
s
R
= 0Ω
L = 200µH
BB
t
150
ns
f
(see fig. 11)
I = 5A ___ V
= 250V
= -5V
C
Clamp
V
BE(off)
Inductive load
Storage time
Fall time
I
= 1A
B1
t
2.2
µs
s
R
= 0Ω
L = 200µH
BB
t
150
ns
f
T =125°C (see fig. 11)
c
Note (1) Pulsed duration = 300 µs, duty cycle ≤1.5%
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STB13007DT4
Electrical characteristics
2.1
Electrical characteristics (curves)
Figure 1.
Figure 3.
Figure 5.
Safe operating area
Figure 2.
Derating curve
DC current gain
Figure 4.
DC current gain
Collector-emitter saturation Figure 6.
voltage
Base-emitter saturation
voltage
5/10
Electrical characteristics
Figure 7.
STB13007DT4
Diode forward voltage
Figure 8.
Switching times inductive
load
Figure 9.
Switching times inductive
load
Figure 10. Reverse biased safe
operating area
2.2
Test circuits
Figure 11. Inductive load switching test circuit
1) Fast electronic switch
2) Non-inductive resistor
3) Fast recovery rectifier
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STB13007DT4
Package mechanical data
3
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
7/10
Package mechanical data
STB13007DT4
TO-252 (DPAK) MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
2.20
0.90
0.03
0.64
5.20
0.45
0.48
6.00
6.40
4.40
9.35
TYP.
MAX.
2.40
1.10
0.23
0.90
5.40
0.60
0.60
6.20
6.60
4.60
10.10
MIN.
0.087
0.035
0.001
0.025
0.204
0.018
0.019
0.236
0.252
0.173
0.368
MAX.
0.094
0.043
0.009
0.035
0.213
0.024
0.024
0.244
0.260
0.181
0.398
A
A1
A2
B
B2
C
C2
D
E
G
H
L2
L4
V2
0.8
0.031
0.60
0o
1.00
8o
0.024
0o
0.039
0o
P032P_B
8/10
STB13007DT4
Revision history
4
Revision history
Table 4.
Date
19-Jun-2006
Revision history
Revision
Changes
1
Initial release.
9/10
STB13007DT4
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