STB16PF06LT4 [STMICROELECTRONICS]
P-CHANNEL 60V - 0.11ohm - 16A D2PAK STripFET MOSFET; P沟道60V - 0.11ohm - 16A D2PAK的STripFET MOSFET
| 型号： | STB16PF06LT4 |
| 厂家： | 
ST |
| 描述： | P-CHANNEL 60V - 0.11ohm - 16A D2PAK STripFET MOSFET |
| 文件： | 总10页 (文件大小：302K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STB16PF06L
P-CHANNEL 60V - 0.11Ω - 16A D2PAK
STripFET™ MOSFET
Table 1: General Features
Figure 1: Package
Pw
TYPE
V
R
I
D
DSS
DS(on)
STB16PF06L
60 V
< 0.125 Ω
16 A
70 W
■ TYPICAL R (on) = 0.11 Ω
DS
■ LOW THRESHOLD DEVICE
■ LOW GATE CHARGE
DESCRIPTION
3
1
This MOSFET is the latest development of STMi-
croelectronics unique “Single Feature Size™”
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalance characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
2
D PAK
TO-263
Figure 2: Internal Schematic Diagram
APPLICATIONS
■ MOTOR CONTROL
■ DC-DC CONVERTERS
Table 2: Order Codes
PART NUMBER
MARKING
PACKAGE
PACKAGING
2
STB16PF06LT4
B16PF06L
TAPE & REEL
D PAK
Rev. 1
September 2004
1/10
STB16PF06L
Table 3: Absolute Maximum ratings
Symbol
Parameter
Value
60
Unit
V
V
DS
Drain-source Voltage (V = 0)
GS
V
DGR
Drain-gate Voltage (R = 20 kΩ)
60
V
GS
V
Gate-source Voltage
± 16
16
V
GS
I
Drain Current (continuous) at T = 25°C
A
D
C
I
Drain Current (continuous) at T = 100°C
11.4
64
A
D
C
I
( )
Drain Current (pulsed)
A
DM
P
TOT
Total Dissipation at T = 25°C
70
W
C
Derating Factor
0.4
20
W/°C
V/ns
mJ
dv/dt (1)
Peak Diode Recovery voltage slope
Single Pulse Avalanche Energy
E
(2)
250
AS
T
T
stg
Operating Junction Temperature
Storage Temperature
j
- 55 to 175
°C
( ) Pulse width limited by safe operating area
(1) I ≤16A, di/dt ≤100A/µs, V ≤ V , T ≤ T
JMAX.
SD
DD
(BR)DSS
j
(2) Starting T = 25°C , I = 8 A , V = 30 V
j
D
DD
Note:For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reverse
Table 4: Thermal Data
Rthj-case
Thermal Resistance Junction-case Max
2.14
34
°C/W
°C/W
°C
Rthj-PCB(#) Thermal Resistance Junction-PCB Max
T
Maximum Lead Temperature For Soldering
300
l
Purpose (1.6 mm frrom case, for 10sec)
2
(#) When Mounted on 1 inch FR-4 board, 2 oz of Cu
ELECTRICAL CHARACTERISTICS (T
=25°C UNLESS OTHERWISE SPECIFIED)
CASE
Table 5: On/Off
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
Drain-source
I
D
= 250µA, V = 0
60
V
(BR)DSS
GS
Breakdown Voltage
Zero Gate Voltage
I
V
= Max Rating
DS
1
10
µA
µA
DSS
Drain Current (V = 0)
V
DS
= Max Rating, T = 125 °C
GS
C
I
Gate-body Leakage
V
V
= ± 16V
±100
nA
GSS
GS
Current (V = 0)
DS
V
GS(th)
= V , I = 100µA
Gate Threshold Voltage
1.5
V
DS
GS
D
R
Static Drain-source On
Resistance
V
V
= 10V, I = 8 A
0.11
0.130
0.125
0.165
Ω
Ω
DS(on)
GS
D
= 5V, I = 8 A
GS
D
2/10
STB16PF06L
ELECTRICAL CHARACTERISTICS (CONTINUED)
Table 6: Dynamic
Symbol
Parameter
Test Conditions
= 10 V I = 3 A
Min.
Typ.
Max.
Unit
g
Forward Transconductance
V
7.2
S
fs
DS
, D
C
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
= 25V, f = 1 MHz, V = 0
630
121
49
pF
pF
pF
iss
DS
GS
C
oss
C
rss
t
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
V
V
= 30 V, I = 8 A, R = 4.7Ω
= 4.5 V
129
90
25.5
19.5
ns
ns
ns
ns
d(on)
DD
D
G
t
r
GS
t
(Resistive Load , Figure 1)
d(off)
t
f
Q
V
V
= 48 V, I = 16 A,
= 4.5V
15.5
nC
nC
nC
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
11.4
5.2
4.7
g
DD
D
Q
gs
gd
GS
Q
(See test circuit, Figure 2)
Table 7: Source Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
16
64
A
A
Source-drain Current
Source-drain Current (pulsed)
SD
(2)
I
SDM
V
(1)
I
I
= 8 A, V = 0
Forward On Voltage
1.3
V
SD
SD
GS
t
= 16 A, di/dt = 100A/µs
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
48.5
87.3
3.6
ns
nC
A
rr
SD
Q
V
= 20V, T = 150°C
rr
DD
j
I
(see test circuit, Figure 3)
RRM
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3/10
STB16PF06L
Figure 3: Safe Operating Area
Figure 6: Thermal Impedance
Figure 4: Output Characteristics
Figure 7: Transfer Characteristics
Figure 5: Transconductance
Figure 8: Static Drain-source On Resistance
4/10
STB16PF06L
Figure 9: Gate Charge vs Gate-source Voltage
Figure 12: Capacitance Variations
Figure 10: Normalized Gate Thereshold Volt-
age vs Temperature
Figure 13: Normalized On Resistance vs Tem-
perature
Figure 11: Dource-Drain Diode Forward Char-
acteristics
Figure 14: Normalized Breakdown Voltage vs
Temperature
5/10
STB16PF06L
Figure 15: Unclamped Inductive Load Test Cir-
cuit
Figure 18: Unclamped Inductive Wafeform
Figure 16: Switching Times Test Circuit For
Resistive Load
Figure 19: Gate Charge Test Circuit
Figure 17: Test Circuit For Inductive Load
Switching and Diode Recovery Times
6/10
STB16PF06L
D2PAK MECHANICAL DATA
mm.
inch
TYP.
DIM.
MIN.
4.4
TYP
MAX.
4.6
MIN.
0.173
0.098
0.001
0.027
0.044
0.017
0.048
0.352
MAX.
0.181
0.106
0.009
0.036
0.067
0.023
0.053
0.368
A
A1
A2
B
2.49
0.03
0.7
2.69
0.23
0.93
1.7
B2
C
1.14
0.45
1.23
8.95
0.6
C2
D
1.36
9.35
D1
E
8
0.315
0.334
10
10.4
0.393
E1
G
8.5
4.88
15
5.28
15.85
1.4
0.192
0.590
0.050
0.055
0.094
0.208
0.625
0.055
0.068
0.126
L
L2
L3
M
1.27
1.4
1.75
3.2
2.4
R
0.4
0.015
V2
0º
4º
1
7/10
STB16PF06L
2
D PAK FOOTPRINT
TUBE SHIPMENT (no suffix)*
TAPE AND REEL SHIPMENT (suffix ”T4”)*
REEL MECHANICAL DATA
mm
MIN. MAX. MIN. MAX.
330 12.992
inch
DIM.
A
B
C
D
G
N
T
1.5
12.8
20.2
24.4
100
0.059
13.2 0.504 0.520
0795
26.4 0.960 1.039
3.937
30.4
1.197
BASE QTY
BULK QTY
1000
TAPE MECHANICAL DATA
1000
mm
inch
DIM.
MIN. MAX. MIN. MAX.
10.5 10.7 0.413 0.421
15.7 15.9 0.618 0.626
A0
B0
D
1.5
1.6 0.059 0.063
D1
E
1.59 1.61 0.062 0.063
1.65 1.85 0.065 0.073
F
11.4
4.8
3.9
11.9
1.9
50
11.6 0.449 0.456
5.0 0.189 0.197
4.1 0.153 0.161
12.1 0.468 0.476
2.1 0.075 0.082
1.574
K0
P0
P1
P2
R
T
0.25 0.35 0.0098 0.0137
23.7 24.3 0.933 0.956
W
* on sales type
8/10
STB16PF06L
Table 8: Revision History
Date
Revision
Description of Changes
13/Sep/2004
1
First Release.
9/10
STB16PF06L
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
All other names are the property of their respective owners
© 2004 STMicroelectronics - All Rights Reserved
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10/10
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