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STB190NF04/-1 [STMICROELECTRONICS]

N-CHANNEL 40V - 3.9 mW - 120A D2PAK/I2PAK/TO-220 STripFET II POWER MOSFET; N沟道40V - 3.9毫瓦 - 120A D2PAK / I2PAK / TO- 220的STripFET II功率MOSFET
STB190NF04/-1
型号： STB190NF04/-1
厂家： ST    ST
描述：

N-CHANNEL 40V - 3.9 mW - 120A D2PAK/I2PAK/TO-220 STripFET II POWER MOSFET
N沟道40V - 3.9毫瓦 - 120A D2PAK / I2PAK / TO- 220的STripFET II功率MOSFET
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STP190NF04  
STB190NF04 STB190NF04-1  
2
2
N-CHANNEL 40V - 3.9 mΩ - 120A D PAK/I PAK/TO-220  
STripFET™ II POWER MOSFET  
PRELIMINARY DATA  
V
DSS  
R
I
D
TYPE  
DS(on)  
STB190NF04/-1  
STP190NF04  
40 V  
40 V  
<0.0043 Ω  
<0.0043 Ω  
120 A  
120 A  
■
■
■
TYPICAL R (on) =3.9 mΩ  
DS  
3
STANDARD THRESHOLD DRIVE  
100% AVALANCHE TESTED  
3
1
2
1
2
I PAK  
2
D PAK  
TO-263  
TO-262  
DESCRIPTION  
This Power MOSFET is the latest development of  
STMicroelectronis unique "Single Feature Size™"  
strip-based process. The resulting transistor  
shows extremely high packing density for low on-  
resistance, rugged avalanche characteristics and  
3
2
1
TO-220  
less critical alignment steps therefore  
remarkable manufacturing reproducibility.  
a
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
■
HIGH CURENT, HIGH SWITCHING SPEED  
■
AUTOMOTIVE  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
40  
Unit  
V
V
Drain-source Voltage (V = 0)  
DS  
GS  
V
Drain-gate Voltage (R = 20 kΩ)  
40  
V
DGR  
GS  
V
Gate- source Voltage  
± 20  
120  
120  
480  
310  
2.07  
7
V
GS  
I (•)  
D
Drain Current (continuous) at T = 25°C  
A
C
I
Drain Current (continuous) at T = 100°C  
A
D
C
I
(••)  
Drain Current (pulsed)  
A
DM  
P
Total Dissipation at T = 25°C  
W
tot  
C
Derating Factor  
W/°C  
V/ns  
mJ  
(1)  
Peak Diode Recovery voltage slope  
Single Pulse Avalanche Energy  
Storage Temperature  
dv/dt  
(1)  
E
860  
AS  
T
stg  
-55 to 175  
°C  
T
Max. Operating Junction Temperature  
j
(••) Pulse width limited by safe operating area.  
(•) Current limited by package  
1) I ≤190A, di/dt ≤600A/µs, V ≤ V  
, T ≤ T  
j JMAX  
SD  
DD  
(BR)DSS  
February 2004  
1/9  
STB190NF04/-1 STP190NF04  
THERMAL DATA  
Rthj-case  
Rthj-amb  
Thermal Resistance Junction-case  
Thermal Resistance Junction-ambient  
Maximum Lead Temperature For Soldering Purpose  
Max  
Max  
Typ  
0.48  
50  
300  
°C/W  
°C/W  
°C  
T
l
ELECTRICAL CHARACTERISTICS (T  
= 25 °C unless otherwise specified)  
case  
OFF  
Symbol  
Parameter  
Drain-source  
Test Conditions  
= 250 µA = 0  
Min.  
Typ.  
Max.  
Unit  
I
V
GS  
40  
V
V
D
(BR)DSS  
Breakdown Voltage  
V
V
= Max Rating  
= Max Rating T = 125°C  
Zero Gate Voltage  
1
10  
µA  
µA  
I
DS  
DSS  
Drain Current (V = 0)  
GS  
DS  
C
Gate-body Leakage  
V
GS  
= ± 20V  
±100  
nA  
I
GSS  
Current (V = 0)  
DS  
(*)  
ON  
Symbol  
Parameter  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
V
V
GS(th)  
V
V
= V  
I
= 250 µA  
D
Gate Threshold Voltage  
2
4
DS  
GS  
= 10 V  
I
= 95A  
Static Drain-source On  
Resistance  
0.0039 0.0043  
Ω
R
GS  
D
DS(on)  
DYNAMIC  
Symbol  
Parameter  
Test Conditions  
15 V = 95 A  
Min.  
Typ.  
Max.  
Unit  
(*)  
V
V
I
D
g
fs  
Forward Transconductance  
200  
S
DS =  
C
iss  
= 25V, f = 1 MHz, V = 0  
GS  
Input Capacitance  
Output Capacitance  
Reverse Transfer  
Capacitance  
5800  
1500  
200  
pF  
pF  
pF  
DS  
C
oss  
C
rss  
2/9  
STB190NF04/-1 STP190NF04  
ELECTRICAL CHARACTERISTICS (continued)  
SWITCHING ON  
Symbol  
Parameter  
Test Conditions  
= 20 V = 95 A  
Min.  
Typ.  
Max.  
Unit  
V
R
I
D
Turn-on Delay Time  
Rise Time  
45  
380  
ns  
ns  
t
DD  
d(on)  
= 4.7 Ω  
V
= 10 V  
GS  
t
r
G
(Resistive Load, Figure 3)  
Q
V
DD  
=20V I =190 A V =10V  
D GS  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
130  
40  
45  
nC  
nC  
nC  
g
Q
gs  
Q
gd  
SWITCHING OFF  
Symbol  
Parameter  
Test Conditions  
= 20 V = 95 A  
Min.  
Min.  
Typ.  
Max.  
Max.  
Unit  
V
R
I
D
Turn-off Delay Time  
Fall Time  
100  
75  
ns  
ns  
t
DD  
d(off)  
= 4.7Ω,  
V
= 10 V  
GS  
t
G
f
(Resistive Load, Figure 3)  
SOURCE DRAIN DIODE  
Symbol  
Parameter  
Test Conditions  
Typ.  
Unit  
I
Source-drain Current  
Source-drain Current (pulsed)  
120  
480  
A
A
SD  
(•)  
I
SDM  
(*)  
I
I
= 120 A  
V
= 0  
GS  
V
Forward On Voltage  
1.3  
V
SD  
SD  
SD  
t
rr  
= 190 A  
= 34 V  
di/dt = 100A/µs  
T = 150°C  
Reverse Recovery Time  
Reverse Recovery Charge  
Reverse Recovery Current  
90  
295  
6.5  
ns  
nC  
A
Q
V
rr  
DD  
j
I
(see test circuit, Figure 5)  
RRM  
(*)  
(
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.  
•)Pulse width limited by safe operating area.  
3/9  
STB190NF04/-1 STP190NF04  
Fig. 1: Unclamped Inductive Load Test Circuit  
Fig. 2: Unclamped Inductive Waveform  
Fig. 3: Switching Times Test Circuits For Resistive  
Fig. 4: Gate Charge test Circuit  
Load  
Fig. 5: Test Circuit For Inductive Load Switching  
And Diode Recovery Times  
4/9  
STB190NF04/-1 STP190NF04  
2
D PAK MECHANICAL DATA  
mm.  
inch.  
DIM.  
MIN.  
4.4  
TYP.  
MAX.  
4.6  
MIN.  
0.173  
0.098  
0.001  
0.028  
0.045  
0.018  
0.048  
0.352  
TYP.  
TYP.  
0.181  
0.106  
0.009  
0.037  
0.067  
0.024  
0.054  
0.368  
A
A1  
A2  
B
2.49  
0.03  
0.7  
2.69  
0.23  
0.93  
1.7  
B2  
C
1.14  
0.45  
1.21  
8.95  
0.6  
C2  
D
1.36  
9.35  
D1  
E
8
0.315  
0.334  
10  
8.5  
4.88  
15  
10.4  
0.394  
0.409  
E1  
G
5.28  
15.85  
1.4  
0.192  
0.591  
0.050  
0.055  
0.094  
0.208  
0.624  
0.055  
0.069  
0.126  
L
L2  
L3  
M
1.27  
1.4  
2.4  
1.75  
3.2  
R
0.4  
0.016  
V2  
0°  
8°  
0°  
8°  
5/9  
STB190NF04/-1 STP190NF04  
TO-262 (I2PAK) MECHANICAL DATA  
mm  
inch  
TYP.  
DIM.  
MIN.  
4.4  
TYP.  
MAX.  
4.6  
MIN.  
0.173  
0.098  
0.027  
0.044  
0.017  
0.048  
0.352  
0.094  
0.393  
0.515  
0.137  
0.050  
MAX.  
0.181  
0.106  
0.036  
0.067  
0.023  
0.053  
0.368  
0.106  
0.409  
0.531  
0.149  
0.055  
A
A1  
B
2.49  
0.7  
2.69  
0.93  
1.7  
B2  
C
1.14  
0.45  
1.23  
8.95  
2.4  
0.6  
C2  
D
1.36  
9.35  
2.7  
e
E
10  
10.4  
13.6  
3.78  
1.4  
L
13.1  
3.48  
1.27  
L1  
L2  
L1  
L2  
D
L
P011P5/E  
6/9  
STB190NF04/-1 STP190NF04  
TO-220 MECHANICAL DATA  
mm  
inch  
DIM.  
MIN.  
4.40  
1.23  
2.40  
TYP.  
MAX.  
4.60  
1.32  
2.72  
MIN.  
0.173  
0.048  
0.094  
TYP.  
MAX.  
0.181  
0.051  
0.107  
A
C
D
D1  
E
1.27  
0.050  
0.49  
0.61  
1.14  
1.14  
4.95  
2.4  
0.70  
0.88  
1.70  
1.70  
5.15  
2.7  
0.019  
0.024  
0.044  
0.044  
0.194  
0.094  
0.393  
0.027  
0.034  
0.067  
0.067  
0.203  
0.106  
0.409  
F
F1  
F2  
G
G1  
H2  
L2  
L4  
L5  
L6  
L7  
L9  
DIA.  
10.0  
10.40  
16.4  
0.645  
13.0  
2.65  
15.25  
6.2  
14.0  
2.95  
15.75  
6.6  
0.511  
0.104  
0.600  
0.244  
0.137  
0.147  
0.551  
0.116  
0.620  
0.260  
0.154  
0.151  
3.5  
3.93  
3.85  
3.75  
L2  
Dia.  
L5  
L9  
L7  
L6  
L4  
P011C  
7/9  
STB190NF04/-1 STP190NF04  
D2PAK FOOTPRINT  
TUBE SHIPMENT (no suffix)*  
TAPE AND REEL SHIPMENT (suffix ”T4”)*  
REEL MECHANICAL DATA  
mm  
inch  
MAX.  
DIM.  
MIN.  
MAX.  
MIN.  
A
B
C
D
G
N
T
330  
12.992  
0.520  
1.039  
1.197  
1.5  
12.8  
20.2  
24.4  
100  
0.059  
0.504  
0.795  
0.960  
3.937  
13.2  
26.4  
30.4  
BASE QTY  
BULK QTY  
1000  
1000  
TAPE MECHANICAL DATA  
mm  
inch  
DIM.  
MIN.  
10.5  
15.7  
1.5  
MAX.  
10.7  
15.9  
1.6  
MIN.  
0.413  
0.618  
0.059  
0.062  
0.065  
0.449  
0.189  
0.153  
0.468  
0075  
MAX.  
0.421  
0.626  
0.063  
0.063  
0.073  
0.456  
0.197  
0.161  
0.476  
0.082  
A0  
B0  
D
D1  
E
1.59  
1.65  
11.4  
4.8  
1.61  
1.85  
11.6  
5.0  
F
K0  
P0  
P1  
P2  
R
3.9  
4.1  
11.9  
1.9  
12.1  
2.1  
50  
1.574  
T
0.25  
23.7  
0.35  
24.3  
.0.0098 0.0137  
0.933 0.956  
W
* on sales type  
8/9  
STB190NF04/-1 STP190NF04  
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences  
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted  
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject  
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not  
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.  
The ST logo is registered trademark of STMicroelectronics  
2002 STMicroelectronics - All Rights Reserved  
All other names are the property of their respective owners.  
STMicroelectronics GROUP OF COMPANIES  
Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco -  
Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.  
http://www.st.com  
9/9  

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