STB20NM60A-1 [STMICROELECTRONICS]
N-CHANNEL 650V@Tjmax - 0.25 Ohm - 20A I2PAK/TO-220/TO-220FP; N沟道650V @ TJMAX - 0.25欧姆 - 20A I2PAK / TO- 220 / TO- 220FP
| 型号： | STB20NM60A-1 |
| 厂家： | 
ST |
| 描述： | N-CHANNEL 650V@Tjmax - 0.25 Ohm - 20A I2PAK/TO-220/TO-220FP |
| 文件： | 总12页 (文件大小：304K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STB20NM60A-1
STP20NM60A - STF20NM60A
max
N-CHANNEL 650V@Tj
- 0.25Ω - 20A I²PAK/TO-220/TO-220FP
MDmesh™ MOSFET
TYPE
V
@Tj
R
I
D
DSS
max
DS(on)
STB20NM60A-1
STP20NM60A
STF20NM60A
650 V
650 V
650 V
< 0.29 Ω
< 0.29 Ω
< 0.29 Ω
20 A
20 A
20 A
3
2
■
■
■
■
TYPICAL R (on) = 0.25Ω
HIGH dv/dt
LOW INPUT CAPACITANCE AND GATE CHARGE
LOW GATE INPUT RESISTANCE
3
1
DS
2
1
TO-220
I²PAK
3
2
1
DESCRIPTION
TO-220FP
The MDmesh™ is a new revolutionary MOSFET tech-
nology that associates the Multiple Drain process with
the Company’s PowerMESH™ horizontal layout. The
resulting product has an outstanding low on-resis-
tance, impressively high dv/dt and excellent avalanche
characteristics. The adoption of the Company’s propri-
etary strip technique yields overall dynamic perfor-
mance that is significantly better than that of similar
competition’s products.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■
SPECIFICALLY DESIGNED FOR ADAPTORS IN
QUASI-RESONANT CONFIGURATION
ORDER CODES
PART NUMBER
MARKING
B20NM60A
P20NM60A
F20NM60A
PACKAGE
PACKAGING
TUBE
2
STB20NM60A-1
STP20NM60A
STF20NM60A
I PAK
TO-220
TUBE
TO-220FP
TUBE
March 2004
1/12
STB20NM60A-1/STP20NM60A/STF20NM60A
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
STB20NM60A-1
STP20NM60A
Unit
STF20NM60A
V
Gate-source Voltage
±30
V
A
GS
I
Drain Current (continuous) at T = 25°C
20
12.6
80
20(*)
12.6(*)
80(*)
45
D
C
I
Drain Current (continuous) at T = 100°C
A
D
C
I
( )
Drain Current (pulsed)
A
DM
P
TOT
Total Dissipation at T = 25°C
192
1.2
W
C
Derating Factor
0.36
W/°C
V/ns
V
dv/dt (1)
Peak Diode Recovery voltage slope
Insulation Winthstand Voltage (DC)
Storage Temperature
15
V
ISO
--
2500
T
stg
–55 to 150
°C
T
Max. Operating Junction Temperature
j
( ) Pulse width limited by safe operating area
(1) I ≤ 20A, di/dt ≤ 400 A/µs, V ≤ V
, T ≤ T
j JMAX.
SD
DD
(BR)DSS
(*) Limited only by maximum temperature allowed
THERMAL DATA
2
TO-220FP
I PAK/TO-220
Rthj-case
Rthj-amb
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max
Max
0.65
2.8
°C/W
°C/W
°C
62.5
300
T
Maximum Lead Temperature For Soldering Purpose
l
ELECTRICAL CHARACTERISTICS (T
= 25 °C UNLESS OTHERWISE SPECIFIED)
CASE
ON/OFF
Symbol
Parameter
Drain-source
Test Conditions
= 250 µA, V = 0
Min.
Typ.
Max.
Unit
V
I
600
V
(BR)DSS
D
GS
Breakdown Voltage
I
Zero Gate Voltage
V
V
V
= Max Rating
1
µA
µA
nA
DSS
DS
DS
GS
Drain Current (V = 0)
GS
= Max Rating, T = 125 °C
10
C
I
Gate-body Leakage
= ± 30V
±100
GSS
Current (V = 0)
DS
V
V
V
= V , I = 250 µA
4
V
Gate Threshold Voltage
2
3
GS(th)
DS
GS
GS
D
R
DS(on)
Static Drain-source On
Resistance
= 10V, I = 10A
0.25
0.29
Ω
D
2/12
STB20NM60A-1/STP20NM60A/STF20NM60A
ELECTRICAL CHARACTERISTICS (CONTINUED)
DYNAMIC
Symbol
(1)
Parameter
Test Conditions
x R
DS(on)max,
Min.
Typ.
Max.
Unit
g
Forward Transconductance
V
> I
11
S
fs
DS
D(on)
I
= 10A
D
C
C
V = 25V, f = 1 MHz, V = 0
DS GS
Input Capacitance
Output Capacitance
1630
350
33
pF
pF
pF
iss
oss
C
Reverse Transfer
Capacitance
rss
C
(2) Equivalent Output
Capacitance
V
= 0V, V = 0V to 400V
150
pF
oss eq.
GS
DS
(1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(2) C is defined as a constant equivalent capacitance giving the same charging time as C
when V increases from 0 to 80% V .
DSS
oss eq.
oss
DS
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
V
R
= 300V, I = 10 A
Turn-on Delay Time
20
ns
ns
d(on)
DD
D
= 4.7Ω V = 10V
G
GS
t
r
Rise Time
16
(see test circuit, Figure 3)
Q
V
V
= 400V, I = 20A,
= 10V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
45
8.2
19
60
nC
nC
nC
g
DD
GS
D
Q
gs
Q
gd
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Min.
Typ.
Max.
Unit
t
V
R
= 300V, I = 20 A,
Turn-off Delay Time
46
ns
d(off)
DD
D
= 4.7Ω, V = 10V
GS
(see test circuit, Figure 5)
G
t
f
Fall Time
20
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Typ.
Max.
20
Unit
A
I
SD
Source-drain Current
I
(2)
(1)
Source-drain Current (pulsed)
Forward On Voltage
80
A
SDM
V
I
I
= 20 A, V = 0
1.5
V
SD
SD
SD
GS
t
rr
= 20 A, di/dt = 100A/µs,
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
432
5.1
23.6
ns
µC
A
Q
I
V
= 50 V, T = 25°C
rr
DD
j
(see test circuit, Figure 5)
rrm
t
Q
I
V
= 20 A, di/dt = 100A/µs,
SD
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
595
7.3
24.8
ns
µC
A
rr
= 50 V, T = 150°C
rr
DD
j
I
(see test circuit, Figure 5)
rrm
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3/12
STB20NM60A-1/STP20NM60A/STF20NM60A
Safe Operating Area for TO-220/I2PAK
Safe Operating Area for TO-220FP
Thermal Impedance for TO-220/I2PAK
Thermal Impedance for TO-220FP
Output Characteristics
Transfer Characteristics
4/12
STB20NM60A-1/STP20NM60A/STF20NM60A
Static Drain-Source On Resistance
Transconductance
Gate Charge vs Gate-source Voltage
Capacitance Variations
Normalized Gate Thereshold Voltage vs Temp.
Normalized On Resistance vs Temperature
5/12
STB20NM60A-1/STP20NM60A/STF20NM60A
Source-drain Diode Forward Characteristics
Normalized BVDSS vs Temperature
Typical Switching Time vs Rg
Typical Drain Current Slope vs Rg
Typical Drain Source Voltage Slope vs Rg
Typical Switching Losses vs Rg
6/12
STB20NM60A-1/STP20NM60A/STF20NM60A
Typical Coss Stored Energy vs Rg
7/12
STB20NM60A-1/STP20NM60A/STF20NM60A
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuit For
Fig. 4: Gate Charge test Circuit
Resistive Load
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
8/12
STB20NM60A-1/STP20NM60A/STF20NM60A
2
TO-262 (I PAK) MECHANICAL DATA
mm.
TYP
inch
TYP.
DIM.
MIN.
4.40
2.40
0.61
1.14
0.49
1.23
8.95
2.40
4.95
10
MAX.
4.60
2.72
0.88
1.70
0.70
1.32
9.35
2.70
5.15
10.40
14
MIN.
0.173
0.094
0.024
0.044
0.019
0.048
0.352
0.094
0.194
0.393
0.511
0.137
0.050
MAX.
0.181
0.107
0.034
0.066
0.027
0.052
0.368
0.106
0.202
0.410
0.551
0.154
0.055
A
A1
b
b1
c
c2
D
e
e1
E
L
13
L1
L2
3.50
1.27
3.93
1.40
9/12
STB20NM60A-1/STP20NM60A/STF20NM60A
TO-220 MECHANICAL DATA
mm.
TYP
inch
TYP.
DIM.
MIN.
4.40
0.61
1.15
0.49
15.25
10
MAX.
4.60
0.88
1.70
0.70
15.75
10.40
2.70
5.15
1.32
6.60
2.72
14
MIN.
0.173
0.024
0.045
0.019
0.60
MAX.
0.181
0.034
0.066
0.027
0.620
0.409
0.106
0.202
0.052
0.256
0.107
0.551
0.154
A
b
b1
c
D
E
0.393
0.094
0.194
0.048
0.244
0.094
0.511
0.137
e
2.40
4.95
1.23
6.20
2.40
13
e1
F
H1
J1
L
L1
L20
L30
øP
Q
3.50
3.93
16.40
28.90
0.645
1.137
3.75
2.65
3.85
2.95
0.147
0.104
0.151
0.116
10/12
STB20NM60A-1/STP20NM60A/STF20NM60A
TO-220FP MECHANICAL DATA
mm.
TYP
inch
TYP.
DIM.
MIN.
4.4
MAX.
4.6
2.7
2.75
0.7
1
MIN.
0.173
0.098
0.098
0.017
0.030
0.045
0.045
0.195
0.094
0.393
MAX.
0.181
0.106
0.108
0.027
0.039
0.067
0.067
0.204
0.106
0.409
A
B
2.5
D
2.5
E
0.45
0.75
1.15
1.15
4.95
2.4
F
F1
F2
G
1.7
1.7
5.2
2.7
10.4
G1
H
10
L2
L3
L4
L5
L6
L7
Ø
16
0.630
28.6
9.8
2.9
15.9
9
30.6
10.6
3.6
1.126
.0385
0.114
0.626
0.354
0.118
1.204
0.417
0.141
0.645
0.366
0.126
16.4
9.3
3
3.2
L3
L6
L7
1 2
L4
3
L5
L2
11/12
STB20NM60A-1/STP20NM60A/STF20NM60A
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
All other names are the property of their respective owners
© 2004 STMicroelectronics - All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -
Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.
http://www.st.com
12/12
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