STB230NH03LTRL [STMICROELECTRONICS]
80A, 30V, 0.003ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, D2PAK, SC06140, 3 PIN;
| 型号： | STB230NH03LTRL |
| 厂家： | 
ST |
| 描述： | 80A, 30V, 0.003ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, D2PAK, SC06140, 3 PIN 晶体 晶体管 功率场效应晶体管 开关 脉冲 |
| 文件： | 总13页 (文件大小：415K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STB230NH03L
N-channel 30V - 80A - D2PAK
STripFET™ Power MOSFET
Features
Type
VDSS
RDS(on)
ID
STB230NH03L
30V
< 3mΩ
80A(1)
1. This value is limited by package
■ R
Qg industry’s benchmark
DS(on)
3
1
■ Conduction losses reduced
■ Switching losses reduced
■ Low threshold device
D²PAK
Description
This product utilizes the latest advanced design
rules of ST’s proprietary STripFET™ technology.
This is suitable for the most demanding DC-DC
converter application where high efficiency is to
be achieved.
Internal schematic diagram
Applications
■ Switching applications
– Specifically designed and optimized for
high efficiency DC/DC converters
– OR-ing
Order code
Part number
Marking
Package
Packaging
STB230NH03L
B230NH03L
D²PAK
Tape & reel
June 2007
Rev1
1/13
www.st.com
13
Contents
STB230NH03L
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
4
5
6
Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2/13
STB230NH03L
Electrical ratings
1
Electrical ratings
Table 1.
Symbol
Absolute maximum ratings
Parameter
Value
Unit
VDS
VGS
Drain-source voltage (VGS = 0)
Gate-source voltage
30
20
V
V
(1)
ID
Drain current (continuous) at TC = 25°C
Drain current (continuous) at TC=100°C
Drain current (continuous) at TC=25°C
Drain current (pulsed)
250
A
(1)
ID
178
A
(2)
ID
80
A
(3)
IDM
1000
300
A
(4)
PTOT
Total dissipation at TC = 25°C
Derating factor
W
W/°C
°C
2
TJ
Operating junction temperature
-55 to 175
1. This value is silicon limited
2. This value is limited by package
3. Pulse width limited by safe operating area
4. This value is rated according to Rthj-c
Table 2.
Symbol
Thermal data
Parameter
Value
Unit
RthJC
RthJA
Thermal resistance junction-case max
Thermal resistance junction-ambient max
0.5
°C/W
°C/W
62.5
Maximum lead temperature for soldering
purpose
Tl
300
°C
Table 3.
Symbol
Avalanche data
Parameter
Value
Unit
IAS
Avalanche current
60
A
(1)
EAS
Single pulse avalanche energy
1150
mJ
1. Starting Tj=25°C, ID=IAV, VDD=24V
3/13
Electrical characteristics
STB230NH03L
2
Electrical characteristics
(T
=25°C unless otherwise specified)
CASE
Table 4.
Symbol
On/off states
Parameter
Test conditions
ID = 1mA, VGS= 0
Min.
Typ.
Max.
Unit
Drain-source
breakdown voltage
V(BR)DSS
30
V
V
DS = 30V,
DS = 30V,Tc=125°C
1
µA
µA
Zero gate voltage
drain current (VGS = 0)
IDSS
V
10
Gate body leakage
current (VDS = 0)
IGSS
VGS = 20V
VDS= VGS, ID = 250µA
±100
2.5
3
nA
V
VGS(th)
RDS(on)
Gate threshold voltage
1
1.5
2.3
Static drain-source on
resistance
VGS= 10V, ID= 40A
mΩ
Table 5.
Symbol
Dynamic
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Input capacitance
Output capacitance
Ciss
Coss
Crss
4700
1600
85
pF
pF
pF
VDS =10V, f=1 MHz, VGS=0
Reverse transfer
capacitance
Qg
Qgs
Qgd
VDD=15V, ID = 60A
VGS =10V
Total gate charge
Gate-source charge
Gate-drain charge
72
15
11
nC
nC
nC
(see Figure 13)
f=1 MHz Gate DC Bias = 0
Test signal level = 20mV
open drain
RG
Gate input resistance
5.5
Ω
4/13
STB230NH03L
Electrical characteristics
Table 6.
Switching times
Parameter
Symbol
Test conditions
Min.
Typ.
Max.
Unit
VDD=15V, ID=60A,
RG=4.7Ω, VGS=10V
(see Figure 12)
td(on)
tr
Turn-on delay time
Rise time
11
ns
ns
322
V
DD=15V, ID=60A,
td(off)
tf
Turn-off delay time
Fall time
123
102
ns
ns
RG=4.7Ω, VGS=10V
(see Figure 12)
Table 7.
Symbol
Source drain diode
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Source-drain current
(1)
ISD
250
A
A
Source-drain current
(pulsed)
(2)
1000
ISDM
(3)
ISD=40A, VGS=0
ISD=120A,
Forward on voltage
1.3
V
VSD
trr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
42
34.7
1.6
ns
nC
A
di/dt = 100A/µs,
VDD=20V, Tj=25°C
Qrr
IRRM
(see Figure 17)
ISD=120A,
trr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
47
41.3
1.8
ns
nC
A
di/dt = 100A/µs,
VDD=20V, Tj=150°C
Qrr
IRRM
(see Figure 17)
1. This value is silicon limited
2. Pulse width limited by safe operating area
3. Pulsed: pulse duration=300µs, duty cycle 1.5%
5/13
Electrical characteristics
STB230NH03L
2.1
Electrical characteristics (curves)
Figure 1.
Safe operating area
Figure 2.
Figure 4.
Figure 6.
Thermal impedance
Figure 3.
Figure 5.
6/13
Output characteristics
Transfer characteristics
Static drain-source on resistance
Normalized BV
vs temperature
DSS
STB230NH03L
Electrical characteristics
Figure 7.
Gate charge vs gate-source voltage Figure 8.
Capacitance variations
Figure 9.
Normalized gate threshold voltage Figure 10. Normalized on resistance vs
vs temperature temperature
Figure 11. Source-drain diode forward
characteristics
7/13
Test circuit
STB230NH03L
3
Test circuit
Figure 12. Switching times test circuit for
resistive load
Figure 13. Gate charge test circuit
Figure 14. Test circuit for inductive load
switching and diode recovery times
Figure 15. Unclamped Inductive load test
circuit
Figure 16. Unclamped inductive waveform
Figure 17. Switching time waveform
8/13
STB230NH03L
Package mechanical data
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
9/13
Package mechanical data
STB230NH03L
D2PAK MECHANICAL DATA
mm.
inch
TYP.
DIM.
MIN.
4.4
TYP
MAX.
4.6
MIN.
0.173
0.098
0.001
0.027
0.044
0.017
0.048
0.352
MAX.
0.181
0.106
0.009
0.036
0.067
0.023
0.053
0.368
A
A1
A2
B
2.49
0.03
0.7
2.69
0.23
0.93
1.7
B2
C
1.14
0.45
1.23
8.95
0.6
C2
D
1.36
9.35
D1
E
8
0.315
0.334
10
10.4
0.393
E1
G
8.5
4.88
15
5.28
15.85
1.4
0.192
0.590
0.050
0.055
0.094
0.208
0.625
0.055
0.068
0.126
L
L2
L3
M
1.27
1.4
1.75
3.2
2.4
R
0.4
0.015
V2
0º
4º
1
10/13
STB230NH03L
Packaging mechanical data
5
Packaging mechanical data
2
D PAK FOOTPRINT
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
mm
MIN. MAX. MIN. MAX.
330 12.992
inch
DIM.
A
B
C
D
G
N
T
1.5
12.8
20.2
24.4
100
0.059
13.2 0.504 0.520
0795
26.4 0.960 1.039
3.937
30.4
1.197
BASE QTY
BULK QTY
1000
TAPE MECHANICAL DATA
1000
mm
inch
DIM.
MIN. MAX. MIN. MAX.
10.5 10.7 0.413 0.421
15.7 15.9 0.618 0.626
A0
B0
D
1.5
1.6 0.059 0.063
D1
E
1.59 1.61 0.062 0.063
1.65 1.85 0.065 0.073
F
11.4
4.8
3.9
11.9
1.9
50
11.6 0.449 0.456
5.0 0.189 0.197
4.1 0.153 0.161
12.1 0.468 0.476
2.1 0.075 0.082
1.574
K0
P0
P1
P2
R
T
0.25 0.35 0.0098 0.0137
23.7 24.3 0.933 0.956
W
* on sales type
11/13
Revision history
STB230NH03L
6
Revision history
Table 8.
Date
08-Jun-2007
Revision history
Revision
Changes
1
Initial release.
12/13
STB230NH03L
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