STB3NB60 [STMICROELECTRONICS]
N - CHANNEL 600V - 3.3ohm - 3.3A - D2PAK/I2PAK PowerMESH MOSFET; N - CHANNEL 600V - 3.3ohm - 3.3A - D2PAK / I2PAK的PowerMESH MOSFET
| 型号： | STB3NB60 |
| 厂家： | 
ST |
| 描述： | N - CHANNEL 600V - 3.3ohm - 3.3A - D2PAK/I2PAK PowerMESH MOSFET |
| 文件： | 总9页 (文件大小：94K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STB3NB60
2
2
N - CHANNEL 600V - 3.3Ω - 3.3A - D PAK/I PAK
PowerMESH MOSFET
TYPE
VDSS
RDS(on)
ID
STB3NB60
600 V
<3.6 Ω
3.3 A
■
■
■
■
■
TYPICAL RDS(on) = 3.3 Ω
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
VERY LOW INTRINSIC CAPACITANCES
GATECHARGE MINIMIZED
3
3
2
1
D2PAK
TO-263
1
I2PAK
TO-262
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, SGS-Thomson has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
(Suffix ”T4”)
(Suffix ”-1”)
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■
■
■
HIGH CURRENT, HIGH SPEED SWITCHING
SWITCH MODE POWER SUPPLIES (SMPS)
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
Symbol
VDS
Parameter
Value
600
Unit
V
Drain-source Voltage (VGS = 0)
VDGR
VGS
ID
600
V
Drain- gate Voltage (RGS = 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
± 30
3.3
V
A
o
ID
Drain Current (continuous) at Tc = 100 C
2.1
A
IDM(• )
Ptot
Drain Current (pulsed)
13.2
80
A
o
Total Dissipation at Tc = 25 C
W
Derating Factor
0.64
4.5
W/oC
V/ns
oC
oC
dv/dt(1) Peak Diode Recovery voltage slope
Tstg
Tj
Storage Temperature
-65 to 150
Max. Operating Junction Temperature
150
(•) Pulse width limited by safe operating area
(1) ISD ≤3.3A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
1/9
June 1998
STB3NB60
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max
1.56
oC/W
Rthj-amb Thermal Resistance Junction-ambient
Rthc-sink Thermal Resistance Case-sink
Max
Typ
62.5
0.5
300
oC/W
oC/W
oC
Tl
Maximum Lead Temperature For Soldering Purpose
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
3.3
A
EAS
Single Pulse Avalanche Energy
100
mJ
(starting Tj = 25 oC, ID = IAR, VDD = 50 V)
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbol
V(BR)DSS Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (VGS = 0) VDS = Max Rating
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
600
V
ID = 250 µA VGS = 0
IDSS
IGSS
VDS = Max Rating
1
50
µA
µA
Tc = 125 oC
Gate-body Leakage
Current (VDS = 0)
± 100
nA
VGS = ± 30 V
ON ( )
Symbol
Parameter
Test Conditions
VDS = VGS ID = 250 µA
Min.
Typ.
Max.
Unit
VGS(th)
Gate Threshold
Voltage
3
4
5
V
RDS(on)
ID(on)
Static Drain-source On VGS = 10V ID = 1.6 A
Resistance
3.3
3.6
Ω
On State Drain Current VDS > ID(on) x RDS(on)max
VGS = 10 V
3.3
A
DYNAMIC
Symbol
Parameter
Forward
Test Conditions
VDS > ID(on) x RDS(on)max ID = 1.6 A
Min.
Typ.
Max.
Unit
gfs ( )
1.2
2
S
Transconductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 25 V f = 1 MHz VGS = 0
400
57
7
520
77
9
pF
pF
pF
2/9
STB3NB60
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Turn-on Time
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
VDD = 300 V ID = 1.6 A
11
7
17
11
ns
ns
Rise Time
RG = 4.7 Ω
VGS = 10 V
(see test circuit, figure 3)
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 480 V ID = 3.3 A VGS = 10 V
15
6.2
5.6
22
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
VDD = 480 V ID = 3.3 A
RG = 4.7 Ω VGS = 10 V
(see test circuit, figure 5)
11
13
18
16
18
25
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
ISDM(• )
Source-drain Current
Source-drain Current
(pulsed)
3.3
13.2
A
A
VSD ( ) Forward On Voltage
ISD = 3.3 A VGS = 0
1.6
V
trr
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
500
2.1
8.5
ns
ISD = 3.3 A di/dt = 100 A/µs
VDD = 100 V
(see test circuit, figure 5)
Tj = 150 oC
Qrr
µC
IRRM
A
( ) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Safe Operating Area for D2PAK/I2PAK
Thermal Impedance for D2PAK/I2PAK
3/9
STB3NB60
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate source Voltage
Capacitance Variations
4/9
STB3NB60
Normalized Gate-source Threshold Voltage vs
Temperature
Normalized On Resistence vs Temperature
Source-Drain Diode Forward Characteristics
5/9
STB3NB60
Fig. 1: Unclamped InductiveLoad Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For
Fig. 4: Gate Charge test Circuit
Resistive Load
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
6/9
STB3NB60
2
TO-263 (D PAK) MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
4.3
TYP.
MAX.
4.6
MIN.
0.169
0.098
0.027
0.049
0.017
0.047
0.352
0.393
0.192
0.590
0.050
0.055
MAX.
0.181
0.106
0.036
0.055
0.023
0.053
0.368
0.404
0.208
0.624
0.055
0.068
A
A1
B
2.49
0.7
2.69
0.93
1.4
B2
C
1.25
0.45
1.21
8.95
10
0.6
C2
D
1.36
9.35
10.28
5.28
15.85
1.4
E
G
4.88
15
L
L2
L3
1.27
1.4
1.75
E
A
C2
L2
D
L
L3
A1
B2
B
C
G
P011P6/C
7/9
STB3NB60
TO-262 (I2PAK) MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
4.3
TYP.
MAX.
4.6
MIN.
0.169
0.098
0.027
0.047
0.049
0.017
0.047
0.352
0.096
0.393
0.519
0.137
0.050
MAX.
0.181
0.106
0.036
0.054
0.055
0.023
0.053
0.368
0.104
0.404
0.531
0.149
0.055
A
A1
B
2.49
0.7
2.69
0.93
1.38
1.4
B1
B2
C
1.2
1.25
0.45
1.21
8.95
2.44
10
0.6
C2
D
1.36
9.35
2.64
10.28
13.5
3.78
1.4
e
E
L
13.2
3.48
1.27
L1
L2
L1
L2
D
L
P011P5/C
8/9
STB3NB60
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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9/9
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