STB42N65DM5 [STMICROELECTRONICS]
33A, 650V, 0.085ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3;
| 型号： | STB42N65DM5 |
| 厂家： | 
ST |
| 描述： | 33A, 650V, 0.085ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 |
| 文件： | 总17页 (文件大小：680K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STB42N65DM5
STP42N65DM5, STW42N65DM5
N-channel 650 V, 0.075 Ω, 33 A FDmesh™ V Power MOSFET
(with fast diode) in TO-220, D2PAK and TO-247
Preliminary data
Features
VDSS
TJmax
@
RDS(on)
max
Order codes
ID
3
3
2
STB42N65DM5
STP42N65DM5
STW42N65DM5
1
1
710 V
< 0.085 Ω
33 A
TO-220
D²PAK
■ Higher V
rating
DSS
■ Extremely high dv/dt capability
■ Excellent switching performance
■ Easy to drive
3
2
1
TO-247
■ 100% avalanche tested
Application
Figure 1.
Internal schematic diagram
■ Switching applications
$ꢅꢆꢇ
Description
These device are 650 V, N-cnnel FDmeshV
Power MOSFET that belos to MDmesh™ V
technology based oan innovative proprietary
vertical structure. The resulting product
'ꢅꢁꢇ
associates all advantages of extremely low on-
resistance, unmatched among silicon-based
Power OSFETs and fast switching with an
intrinsic fast-recovery body diode.
3ꢅꢈꢇ
!-ꢀꢁꢂꢃꢄVꢁ
Table 1.
Device summary
Order codes
Marking
Packages
D²PAK
Packaging
STB42N65DM5
STP42N65DM5
STW42N65DM5
42N65DM5
42N65DM5
42N65DM5
Tape and reel
Tube
TO-220
TO-247
Tube
June 2011
Doc ID 018998 Rev 1
1/17
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
www.st.com
17
Contents
STB42N65DM5, STP42N65DM5, STW42N65DM5
Contents
1
2
3
4
5
6
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Test circuits
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
2/17
Doc ID 018998 Rev 1
STB42N65DM5, STP42N65DM5, STW42N65DM5
Electrical ratings
1
Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Parameter
Gate- source voltage
Value
Unit
VGS
ID
25
33
V
A
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
Drain current (pulsed)
ID
20.8
132
210
A
(1)
IDM
A
PTOT
IAR
Total dissipation at TC = 25 °C
W
Max current during repetitive or single pulse
avalanche (pulse width limited by TJMAX
TBD
A
)
Single pulse avalanche energy
EAS
TB
15
mJ
(starting Tj = 25°C, ID = IAR, VDD = 50V)
dv/dt (2) Peak diode recovery voltage slope
V/ns
Tstg
Tj
Storage temperature
- 55 to 150
150
°C
°C
Max. operating junction temperature
1. Pulse width limited by safe operating area
2. ISD ≤ 33 A, di/dt ≤ 400 A/µs, VPeak < V()DS
Table 3.
Symbol
Thermal data
Value
Parameter
Unit
D²PAK TO-220 TO-247
Rthj-case Thermresistance junction-case max
0.60
°C/W
°C/W
°C/W
°C
Rthj-aThermal resistance junction-ambient max
Rhj-pcb Thermal resistance junction-pcb max
62.5
50
30
Tl
Maximum lead temperature for soldering purpose
300
Doc ID 018998 Rev 1
3/17
Electrical characteristics
STB42N65DM5, STP42N65DM5, STW42N65DM5
2
Electrical characteristics
(T = 25 °C unless otherwise specified)
C
Table 4.
Symbol
On /off states
Parameter
Test conditions
ID = 1 mA, VGS = 0
DS = Max rating
Min.
Typ.
Max. Unit
Drain-source
breakdown voltage
V(BR)DSS
650
V
Zero gate voltage
V
1
µA
µA
IDSS
drain current (VGS = 0) VDS = Max rating, TC=125 °C
100
Gate-body leakage
IGSS
VGS
=
25 V
100
5
nA
V
current (VDS = 0)
VGS(th)
RDS(on
Gate threshold voltage VDS = VGS, ID = 250 µA
Static drain-source on
3
4
VGS = 10 V, ID = 16.5 A
0.075 0.085
Ω
resistance
Table 5.
Symbol
Dynamic
Parameter
Teconditions
Min.
Typ.
Max. Unit
Input capacitance
Ciss
Coss
Crss
TBD
TBD
TBD
pF
VDS = 100 V, f = 1 MHz,
VGS = 0
Output capacitance
-
-
-
pF
pF
Reverse transfer
capacitance
Equivalent output
capaance energy
red
VGS = 0, VDS = 0 to 80%
V(BR)DSS
(1)
Co(er)
-
TBD
pF
Equivalent output
capacitance time
related
VGS = 0, VDS = 0 to 80%
V(BR)DSS
(2)
o(tr)
-
-
TBD
TBD
-
-
pF
Intrinsic gate
resistance
RG
f = 1 MHz open drain
Ω
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 520 V, ID = 16.5 A,
VGS = 10 V
TBD
TBD
TBD
nC
nC
nC
-
-
(see Figure 3)
1. Co(er) is a constant capacitance value that gives the same stored energy as Coss while VDS is rising from 0
to 80% VDSS
2. Co(tr) is a constant capacitance value that gives the same charging time as Coss while VDS is rising from 0
to 80% VDSS
4/17
Doc ID 018998 Rev 1
STB42N65DM5, STP42N65DM5, STW42N65DM5
Electrical characteristics
Min. Typ. Max. Unit
Table 6.
Symbol
Switching times
Parameter
Test conditions
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
TBD
TBD
TBD
TBD
ns
ns
ns
ns
VDD = 400 V, ID = 20 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 4)
-
-
Turn-off-delay time
Fall time
Table 7.
Symbol
Source drain diode
Parameter
Test conditions
Min. Typ. Max. Unit
ISD
Source-drain current
33
A
A
-
-
(1)
ISDM
Source-drain current (pulsed)
132
(2)
VSD
Forward on voltage
ISD = 33 A, VGS = 0
1.5
V
trr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
TBD
TBD
TBD
ns
µC
A
ISD = 33 A, di/dt = 100 A
Qrr
-
-
VDD = 100 V (see Figure 4)
IRRM
trr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 33 A, di/dt = 100 A/µs
VDD = 10Tj = 150 °C
(see Figure 4)
TBD
TBD
TBD
ns
µC
A
Qrr
IRRM
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Doc ID 018998 Rev 1
5/17
Test circuits
STB42N65DM5, STP42N65DM5, STW42N65DM5
3
Test circuits
Figure 2. Switching times test circuit for
resistive load
Figure 3. Gate charge test circuit
VDD
12V
47kΩ
1kΩ
100nF
2200
3.3
μF
RL
μF
IG=CONST
VDD
100Ω
Vi=20V=VGMAX
D.U.T.
VD
RG
VGS
2200
μF
D.U.T.
VG
2.7kΩ
47kΩ
PW
1kΩ
PW
AM01468v1
AM01469v1
Figure 4. Test circuit for inductive load
switching and diode recovery times
Figure 5. Unclamped inductive load test
circuit
L
A
A
A
B
D
FAST
DIODE
L=100μH
VD
G
2200
μF
D.U.T.
B
3.3
μF
VDD
S
3.3
μF
1000
μF
B
VDD
25
Ω
ID
D
G
RG
S
Vi
D.U.T.
Pw
AM01470v1
AM01471v1
Figure 6. Unclamped inductive waveform
Figure 7. Switching time waveform
ton
toff
tdoff
V(BR)DSS
tr
tf
tdon
VD
90%
10%
90%
IDM
10%
VDS
ID
0
0
VDD
VDD
90%
VGS
10%
AM01472v1
AM01473v1
6/17
Doc ID 018998 Rev 1
STB42N65DM5, STP42N65DM5, STW42N65DM5
Package mechanical data
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
®
®
ECOPACK packages, depending on their level of environmental compliance. ECOPACK
specifications, grade definitions and product status are available at: www.st.com. ECOPACK
is an ST trademark.
Doc ID 018998 Rev 1
7/17
Package mechanical data
STB42N65DM5, STP42N65DM5, STW42N65DM5
Table 8.
Dim.
D²PAK (TO-263) mechanical data
mm
Min.
Typ.
Max.
A
A1
b
4.40
0.03
0.70
1.14
0.45
1.23
8.95
7.50
10
4.60
0.23
0.93
1.70
0.60
1.36
9.35
b2
c
c2
D
D1
E
10.40
E1
e
8.50
2.54
e1
H
4.88
15
5.28
15.85
2.69
2.79
1.40
1.75
J1
L
2.49
2.29
1.27
1.30
L1
L2
R
0.4
V2
0°
8°
8/17
Doc ID 018998 Rev 1
STB42N65DM5, STP42N65DM5, STW42N65DM5
Package mechanical data
Figure 8.
D²PAK (TO-263) drawing
0079457_S
(a)
Figure 9.
D²PAK footprint
16.90
12.20
5.08
1.60
3.50
9.75
Footprint
a. All dimension are in millimeters
Doc ID 018998 Rev 1
9/17
Package mechanical data
STB42N65DM5, STP42N65DM5, STW42N65DM5
Table 9.
Dim.
TO-220 type A mechanical data
mm
Min.
Typ.
Max.
A
b
4.40
0.61
1.14
0.48
15.25
4.60
0.88
1.70
0.70
15.75
b1
c
D
D1
E
1.27
10
10.40
2.70
5.15
1.32
6.60
2.72
14
e
2.40
4.95
1.23
6.20
2.40
13
e1
F
H1
J1
L
L1
L20
L30
∅P
Q
3.50
3.93
16.40
28.90
3.75
2.65
3.85
2.95
10/17
Doc ID 018998 Rev 1
STB42N65DM5, STP42N65DM5, STW42N65DM5
Figure 10. TO-220 type A drawing
Package mechanical data
0015988_typeA_Rev_S
Doc ID 018998 Rev 1
11/17
Package mechanical data
STB42N65DM5, STP42N65DM5, STW42N65DM5
Table 10. TO-247 mechanical data
mm
Dim.
Min.
Typ.
Max.
A
A1
b
4.85
2.20
1.0
5.15
2.60
1.40
2.40
3.40
0.80
20.15
15.75
b1
b2
c
2.0
3.0
0.40
19.85
15.45
D
E
e
5.45
1850
5.50
L
14.20
3.70
14.80
4.30
L1
L2
∅P
∅R
S
3.55
4.50
3.65
5.50
12/17
Doc ID 018998 Rev 1
STB42N65DM5, STP42N65DM5, STW42N65DM5
Figure 11. TO-247 drawing
Package mechanical data
0075325_F
Doc ID 018998 Rev 1
13/17
Packaging mechanical data
STB42N65DM5, STP42N65DM5, STW42N65DM5
5
Packaging mechanical data
Table 11. D²PAK (TO-263) tape and reel mechanical data
Tape
Reel
mm
mm
Dim.
Dim.
Min.
Max.
Min.
Max.
A0
B0
D
10.5
15.7
1.5
10.7
15.9
1.6
A
B
C
D
G
N
T
330
1.5
12.8
20.2
24.4
100
13.2
26.4
30.4
D1
E
1.59
1.65
11.4
4.8
1.61
1.85
11.6
5.0
F
K0
P0
P1
P2
R
3.9
4.1
11.9
1.9
12.1
2.1
Base qty
Bulk qty
1000
1000
50
T
0.25
23.7
0.35
24.3
W
14/17
Doc ID 018998 Rev 1
STB42N65DM5, STP42N65DM5, STW42N65DM5
Figure 12. Tape
Packaging mechanical data
10 pitches cumulative
tolerance on tape +/- 0.2 mm
P0
D
P2
Top cover
tape
T
E
F
W
K0
B0
A0
D1
P1
User direction of feed
R
Bending radius
User direction of feed
AM08852v2
Figure 13. Reel
T
L DIMENSIONS
40mm min.
Access hole
At sl ot location
B
D
C
N
A
G measured at hub
Full radius
Tape slot
in core for
tape start 25 mm min.
width
AM08851v2
Doc ID 018998 Rev 1
15/17
Revision history
STB42N65DM5, STP42N65DM5, STW42N65DM5
6
Revision history
Table 12. Document revision history
Date
Revision
Changes
30-Jun-2011
1
First release
16/17
Doc ID 018998 Rev 1
STB42N65DM5, STP42N65DM5, STW42N65DM5
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Doc ID 018998 Rev 1
17/17
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