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STB55NF03L

更新时间：2024-09-18 01:40:29
品牌：STMICROELECTRONICS
描述：N-CHANNEL 30V - 0.01 W - 55A TO-220/D2PAK/I2PAK STripFET II POWER MOSFET

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STB55NF03L 概述

N-CHANNEL 30V - 0.01 W - 55A TO-220/D2PAK/I2PAK STripFET II POWER MOSFET N沟道30V - 0.01 W¯¯ - 55A TO- 220 / D2PAK / I2PAK的STripFET II功率MOSFET 功率场效应晶体管

STB55NF03L 规格参数

是否Rohs认证： 符合生命周期：Obsolete
零件包装代码：D2PAK包装说明：D2PAK-3
针数：3Reach Compliance Code：not_compliant
ECCN代码：EAR99风险等级：5.36
Is Samacsys：N其他特性：LOGIC LEVEL COMPATIBLE
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：30 V最大漏极电流 (Abs) (ID)：55 A
最大漏极电流 (ID)：55 A最大漏源导通电阻：0.02 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：TO-263AB
JESD-30 代码：R-PSSO-G2JESD-609代码：e3
元件数量：1端子数量：2
工作模式：ENHANCEMENT MODE最高工作温度：175 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：80 W
最大脉冲漏极电流 (IDM)：220 A认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：YES
端子面层：Matte Tin (Sn)端子形式：GULL WING
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

STB55NF03L 数据手册

通过下载STB55NF03L数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。

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STP55NF03L  
STB55NF03L STB55NF03L-1  
2
2
N-CHANNEL 30V - 0.01 Ω - 55A TO-220/D PAK/I PAK  
STripFET™ II POWER MOSFET  
V
R
I
D
TYPE  
DSS  
DS(on)  
STP55NF03L  
STB55NF03L  
STB55NF03L-1  
30 V  
30 V  
30 V  
<0.013 Ω  
<0.013 Ω  
<0.013 Ω  
55 A  
55 A  
55 A  
■
■
TYPICAL R (on) = 0.01 Ω  
DS  
3
3
1
2
1
OPTIMIZED FOR HIGH SWITCHING  
OPERATIONS  
2
D PAK  
TO-263  
2
I PAK  
■
■
LOW GATE CHARGE  
TO-262  
LOGIC LEVEL GATE DRIVE  
3
DESCRIPTION  
2
1
This Power MOSFET is the latest development of  
STMicroelectronis unique "Single Feature Size™"  
strip-based process. The resulting transistor  
shows extremely high packing density for low on-  
resistance, rugged avalanche characteristics and  
less critical alignment steps therefore a remark-  
able manufacturing reproducibility.  
TO-220  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
■
■
■
LOW VOLTAGE DC-DC CONVERTERS  
HIGH CURRENT, HIGH SWITCHING SPEED  
HIGH EFFICIENCY SWITCHING CIRCUITS  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
30  
Unit  
V
V
Drain-source Voltage (V = 0)  
DS  
GS  
V
Drain-gate Voltage (R = 20 kΩ)  
30  
V
DGR  
GS  
V
Gate- source Voltage  
± 16  
55  
V
GS  
I
Drain Current (continuous) at T = 25°C  
A
D
C
I
D
Drain Current (continuous) at T = 100°C  
39  
A
C
I (•)  
DM  
Drain Current (pulsed)  
220  
A
P
Total Dissipation at T = 25°C  
80  
W
tot  
C
Derating Factor  
0.53  
-60 to 175  
175  
W/°C  
°C  
°C  
T
stg  
Storage Temperature  
T
Max. Operating Junction Temperature  
j
(•) Pulse width limited by safe operating area.  
March 2002  
1/11  
.
STP55NF03L STB55NF03L/-1  
THERMAL DATA  
Rthj-case  
Rthj-amb  
Thermal Resistance Junction-case  
Thermal Resistance Junction-ambient  
Maximum Lead Temperature For Soldering Purpose  
Max  
Max  
Typ  
1.875  
62.5  
300  
°C/W  
°C/W  
°C  
T
l
ELECTRICAL CHARACTERISTICS (T  
= 25 °C unless otherwise specified)  
case  
OFF  
Symbol  
Parameter  
Drain-source  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
I
= 250 µA, V = 0  
30  
V
D
GS  
V
(BR)DSS  
Breakdown Voltage  
V
= Max Rating  
DS  
Zero Gate Voltage  
1
10  
µA  
µA  
I
DSS  
Drain Current (V = 0)  
V
DS  
= Max Rating T = 125°C  
GS  
C
Gate-body Leakage  
V
GS  
= ± 16V  
±100  
nA  
I
GSS  
Current (V = 0)  
DS  
(*)  
ON  
Symbol  
Parameter  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
V
V
= V  
I
I
= 250 µA  
Gate Threshold Voltage  
1
V
GS(th)  
DS  
GS  
D
V
V
= 10 V  
= 4.5 V  
= 27.5 A  
I = 27.5 A  
D
Static Drain-source On  
Resistance  
0.01  
0.013  
0.013  
0.020  
Ω
Ω
GS  
D
R
DS(on)  
GS  
DYNAMIC  
Symbol  
Parameter  
Test Conditions  
> I x R  
DS(on)max,  
Min.  
Typ.  
Max.  
Unit  
V
DS  
D(on)  
(*)  
g
fs  
Forward Transconductance  
30  
S
I
D
= 27.5 A  
V
= 25V, f = 1 MHz, V = 0  
GS  
C
Input Capacitance  
Output Capacitance  
Reverse Transfer  
Capacitance  
1265  
435  
115  
pF  
pF  
pF  
DS  
iss  
C
oss  
C
rss  
2/11  
STP55NF03L STB55NF03L/-1  
ELECTRICAL CHARACTERISTICS (continued)  
SWITCHING ON  
Symbol  
Parameter  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
V
R
= 15 V  
= 4.7 Ω  
I = 27.5 A  
Turn-on Delay Time  
Rise Time  
28  
400  
ns  
ns  
t
DD  
D
d(on)  
V
= 4.5 V  
t
r
G
GS  
(Resistive Load, Figure 3)  
Q
V
= 24 V I = 55 A V = 4.5V  
D GS  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
20  
7
10  
27  
nC  
nC  
nC  
g
DD  
Q
gs  
Q
gd  
SWITCHING OFF  
Symbol  
Parameter  
Test Conditions  
Min.  
Min.  
Typ.  
Max.  
Unit  
V
R
= 15V  
I = 27.5 A  
D
Turn-off Delay Time  
Fall Time  
25  
50  
ns  
ns  
t
DD  
d(off)  
= 4.7Ω,  
V
= 4.5 V  
GS  
t
G
f
(Resistive Load, Figure 3)  
SOURCE DRAIN DIODE  
Symbol  
Parameter  
Test Conditions  
Typ.  
Max.  
Unit  
I
Source-drain Current  
Source-drain Current (pulsed)  
55  
220  
A
A
SD  
( )  
•
I
SDM  
(*)  
I
I
= 55 A  
V
= 0  
GS  
V
Forward On Voltage  
1.3  
V
SD  
SD  
SD  
t
= 55 A  
= 30 V  
di/dt = 100A/µs  
T = 150°C  
Reverse Recovery Time  
Reverse Recovery Charge  
Reverse Recovery Current  
70  
160  
4.5  
ns  
nC  
A
rr  
Q
V
rr  
DD  
j
I
(see test circuit, Figure 5)  
RRM  
(*)  
(
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.  
•)Pulse width limited by safe operating area.  
Safe Operating Area  
Thermal Impedance  
3/11  
STP55NF03L STB55NF03L/-1  
Output Characteristics  
Transfer Characteristics  
Transconductance  
Static Drain-source On Resistance  
Gate Charge vs Gate-source Voltage  
Capacitance Variations  
4/11  
STP55NF03L STB55NF03L/-1  
Normalized Gate Threshold Voltage vs Temperature  
Normalized on Resistance vs Temperature  
Source-drain Diode Forward Characteristics  
Normalized Breakdown Voltage vs Temperature.  
.
.
5/11  
STP55NF03L STB55NF03L/-1  
Fig. 1: Unclamped Inductive Load Test Circuit  
Fig. 2: Unclamped Inductive Waveform  
Fig. 3: Switching Times Test Circuits For Resistive  
Fig. 4: Gate Charge test Circuit  
Load  
Fig. 5: Test Circuit For Inductive Load Switching  
And Diode Recovery Times  
6/11  
STP55NF03L STB55NF03L/-1  
2
D PAK MECHANICAL DATA  
mm.  
inch.  
DIM.  
MIN.  
4.4  
TYP.  
MAX.  
4.6  
MIN.  
0.173  
0.098  
0.001  
0.028  
0.045  
0.018  
0.048  
0.352  
TYP.  
TYP.  
0.181  
0.106  
0.009  
0.037  
0.067  
0.024  
0.054  
0.368  
A
A1  
A2  
B
2.49  
0.03  
0.7  
2.69  
0.23  
0.93  
1.7  
B2  
C
1.14  
0.45  
1.21  
8.95  
0.6  
C2  
D
1.36  
9.35  
D1  
E
8
0.315  
0.334  
10  
8.5  
4.88  
15  
10.4  
0.394  
0.409  
E1  
G
5.28  
15.85  
1.4  
0.192  
0.591  
0.050  
0.055  
0.094  
0.208  
0.624  
0.055  
0.069  
0.126  
L
L2  
L3  
M
1.27  
1.4  
2.4  
1.75  
3.2  
R
0.4  
0.016  
V2  
0°  
4°  
0°  
4°  
7/11  
STP55NF03L STB55NF03L/-1  
TO-220 MECHANICAL DATA  
mm  
inch  
TYP.  
DIM.  
MIN.  
TYP.  
MAX.  
4.60  
1.32  
2.72  
MIN.  
0.173  
0.048  
0.094  
MAX.  
0.181  
0.051  
0.107  
A
C
4.40  
1.23  
2.40  
D
D1  
E
1.27  
0.050  
0.49  
0.61  
1.14  
1.14  
4.95  
2.4  
0.70  
0.88  
1.70  
1.70  
5.15  
2.7  
0.019  
0.024  
0.044  
0.044  
0.194  
0.094  
0.393  
0.027  
0.034  
0.067  
0.067  
0.203  
0.106  
0.409  
F
F1  
F2  
G
G1  
H2  
L2  
L4  
L5  
L6  
L7  
L9  
DIA.  
10.0  
10.40  
16.4  
0.645  
13.0  
2.65  
15.25  
6.2  
14.0  
2.95  
15.75  
6.6  
0.511  
0.104  
0.600  
0.244  
0.137  
0.147  
0.551  
0.116  
0.620  
0.260  
0.154  
0.151  
3.5  
3.93  
3.85  
3.75  
L2  
Dia.  
L5  
L9  
L7  
L6  
L4  
P011C  
8/11  
STP55NF03L STB55NF03L/-1  
TO-262 (I2PAK) MECHANICAL DATA  
mm  
inch  
TYP.  
DIM.  
MIN.  
4.4  
TYP.  
MAX.  
4.6  
MIN.  
0.173  
0.098  
0.027  
0.044  
0.017  
0.048  
0.352  
0.094  
0.393  
0.515  
0.137  
0.050  
MAX.  
0.181  
0.106  
0.036  
0.067  
0.023  
0.053  
0.368  
0.106  
0.409  
0.531  
0.149  
0.055  
A
A1  
B
2.49  
0.7  
2.69  
0.93  
1.7  
B2  
C
1.14  
0.45  
1.23  
8.95  
2.4  
0.6  
C2  
D
1.36  
9.35  
2.7  
e
E
10  
10.4  
13.6  
3.78  
1.4  
L
13.1  
3.48  
1.27  
L1  
L2  
L1  
L2  
D
L
P011P5/E  
9/11  
STP55NF03L STB55NF03L/-1  
D2PAK FOOTPRINT  
TUBE SHIPMENT (no suffix)*  
TAPE AND REEL SHIPMENT (suffix ”T4”)*  
REEL MECHANICAL DATA  
mm  
inch  
MAX.  
DIM.  
MIN.  
MAX.  
MIN.  
A
B
C
D
G
N
T
330  
12.992  
0.520  
1.039  
1.197  
1.5  
12.8  
20.2  
24.4  
100  
0.059  
0.504  
0.795  
0.960  
3.937  
13.2  
26.4  
30.4  
BASE QTY  
BULK QTY  
1000  
1000  
TAPE MECHANICAL DATA  
mm  
inch  
DIM.  
MIN.  
10.5  
15.7  
1.5  
MAX.  
10.7  
15.9  
1.6  
MIN.  
0.413  
0.618  
0.059  
0.062  
0.065  
0.449  
0.189  
0.153  
0.468  
0075  
MAX.  
0.421  
0.626  
0.063  
0.063  
0.073  
0.456  
0.197  
0.161  
0.476  
0.082  
A0  
B0  
D
D1  
E
1.59  
1.65  
11.4  
4.8  
1.61  
1.85  
11.6  
5.0  
F
K0  
P0  
P1  
P2  
R
3.9  
4.1  
11.9  
1.9  
12.1  
2.1  
50  
1.574  
T
0.25  
23.7  
0.35  
24.3  
.0.0098 0.0137  
0.933 0.956  
W
* on sales type  
10/11  
STP55NF03L STB55NF03L/-1  
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences  
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted  
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject  
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not  
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.  
The ST logo is registered trademark of STMicroelectronics  
2002 STMicroelectronics - All Rights Reserved  
All other names are the property of their respective owners.  
STMicroelectronics GROUP OF COMPANIES  
Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco -  
Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.  
http://www.st.com  
11/11  

STB55NF03L CAD模型

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    • STB55NF03L 相关器件

    型号 制造商 描述 价格 文档
    STB55NF03L-1 STMICROELECTRONICS N-CHANNEL 30V - 0.01 W - 55A TO-220/D2PAK/I2PAK STripFET II POWER MOSFET 获取价格
    STB55NF03LT4 ETC TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 55A I(D) | TO-263AB 获取价格
    STB55NF06 STMICROELECTRONICS N-CHANNEL 60V - 0.015 ohm - 50A TO-220/TO-220FP/I PAK/DPAK STripFET⑩ II POWER MOSFET 获取价格
    STB55NF06-1 STMICROELECTRONICS N-CHANNEL 60V - 0.015 ohm - 50A TO-220/TO-220FP/I PAK/DPAK STripFET⑩ II POWER MOSFET 获取价格
    STB55NF06FP ETC TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 26A I(D) | TO-220FP 获取价格
    STB55NF06L STMICROELECTRONICS N-CHANNEL 60V - 0.014ohm - 55A TO-220/FP/D2PAK/I2PAK STripFET⑩II POWER MOSFET 获取价格
    STB55NF06L-1 STMICROELECTRONICS N-CHANNEL 60V - 0.014ohm - 55A TO-220/FP/D2PAK/I2PAK STripFET⑩II POWER MOSFET 获取价格
    STB55NF06LT4 ETC TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 55A I(D) | TO-263AB 获取价格
    STB55NF06T4 STMICROELECTRONICS N-channel 60V - 0.015ヘ - 50A - D2PAK/I2PAK/TO-220/TO-220FP STripFET⑩ II Power MOSFET 获取价格
    STB55NF06_06 STMICROELECTRONICS N-channel 60V - 0.015ヘ - 50A - D2PAK/I2PAK/TO-220/TO-220FP STripFET⑩ II Power MOSFET 获取价格

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