STB70NFS03L_06 [STMICROELECTRONICS]
N-channel - 30V - 0.0075ohm - 70A D2PAK STripFET TM Power MOSFET plus schottky rectifier; N沟道 - 30V - 0.0075ohm - 70A D2PAK的STripFET TM功率MOSFET加上肖特基整流器
| 型号： | STB70NFS03L_06 |
| 厂家： | 
ST |
| 描述： | N-channel - 30V - 0.0075ohm - 70A D2PAK STripFET TM Power MOSFET plus schottky rectifier |
| 文件： | 总13页 (文件大小：291K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STB70NFS03L
N-channel - 30V - 0.0075Ω - 70A D2PAK
STripFET™ Power MOSFET plus schottky rectifier
General features
Type
VDSS
30V
RDS(on)
<0.0095Ω
VRRM
ID
STB70NFS03L
Schottky
70A
IF(AV)
VF(MAX)
3A
30V
0.51V
3
1
D²PAK
Description
This product associates a Power MOSFET of the
third genaration of STMicroelectronics unique
“Single Feature Size” strip-based process and a
low drop schottky diode. The transistor shows the
best trade-off between on-resistance and gate
charge. Used as low side in buck regulators, the
product is the solution in terms of conduction
losses and space saving.
Internal schematic diagram
Applications
■ Switching application
Order codes
Part number
Marking
Package
Packaging
STB70NFS03L
B70NFS03L
D²PAK
Tape & reel
July 2006
Rev 9
1/13
www.st.com
13
Contents
STB70NFS03L
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
4
5
6
Test circuits
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2/13
STB70NFS03L
Electrical ratings
1
Electrical ratings
Table 1.
Symbol
Mosfet absolute maximum ratings
Parameter
Value
Unit
VDS
VGS
ID
Drain-source voltage (VGS = 0)
Gate- source voltage
30
18
V
V
Drain current (continuous) at TC = 25°C
Drain current (continuous) at TC = 100°C
Drain current (pulsed)
70
A
ID
50
A
(1)
IDM
280
100
0.67
5.5
500
A
PTOT Total dissipation at TC = 25°C
W
Derating factor
W/°C
V/ns
mJ
dv/dt (2) Peak diode recovery voltage slope
(3)
EAS
Single pulse avalanche energy
Storage temperature
Tstg
TJ
-55 to 175
°C
Operating junction temperature
1. Pulse width limited by safe operating area
2. ISD < 70A, di/dt < 350A/µs, VDD = 80% V(BR)DSS
3. Starting Tj = 25°C, VDD = 25V
Table 2.
Symbol
Schottky absolute maximum ratings
Parameter
Value
Unit
VRRM Repetitive peak reverse voltage
IF(RMS) RMS forward current
30
20
V
A
TL=125°C
IF(AV) Average forward current
3
A
δ=0.5
tp=10ms
IFSM
Surge non repetitive forward current
Critical rate of rise of reverse voltage
75
A
Sinusoidal
dv/dt
10000
v/µs
Table 3.
Symbol
Thermal data
Parameter
Value
Unit
Rthj-amb Thermal resistance junction-amb max
Rthj-case Thermal resistance junction-case max
1.5
62.5
300
°C/W
°C/W
°C
Tl
Maximum lead temperature for soldering purpose
3/13
Electrical characteristics
STB70NFS03L
2
Electrical characteristics
(Tcase =25°C unless otherwise specified)
Table 4.
Symbol
On /off states
Parameter
Test conditions
Min.
Typ.
Max. Unit
Drain-source
breakdown voltage
V(BR)DSS
ID = 250µA, VGS = 0
30
V
Zero gate voltage
V
DS = Max rating
200
20
µA
IDSS
drain current (VGS = 0) VDS = Max rating, TC=125°C
mA
Gate-body leakage
IGSS
VGS
=
18V
100 nA
V
current (VDS = 0)
Gate threshold voltage VDS = VGS, ID = 250µA
VGS(th)
RDS(on)
1
VGS = 10V, ID = 35A
VGS = 5V, ID = 18A
0.0075 0.0095
0.0135 0.018
Ω
Ω
Static drain-source on
resistance
Table 5.
Symbol
Shottcky static
Parameter
Test conditions
Min.
Typ.
Max. Unit
Tj = 25°C VR = 30V
Tj = 100°C VR = 30V
0.2
mA
mA
Reverse leakage
current
IR
0.03
100
Zero gate voltage
Tj = 25°C IF = 3A
0.51
0.46
V
V
VF
drain current (VGS = 0) Tj = 125°C IF = 3A
0.425
Table 6.
Symbol
Dynamic
Parameter
Test conditions
DS = 25V, ID = 35A
Min.
Typ.
Max. Unit
Forward
transconductance
gfs
V
25
S
Input capacitance
Ciss
Coss
Crss
1440
560
pF
pF
pF
Output capacitance
VDS = 25 V, f = 1 MHz, VGS = 0
Reverse transfer
capacitance
135
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 15V, ID = 70A,
VGS = 5V
22.5
9
30
nC
nC
nC
(see Figure 11)
12
4/13
STB70NFS03L
Electrical characteristics
Min. Typ. Max Unit
Table 7.
Switching times
Parameter
Symbol
Test Conditions
VDD = 15V, ID = 35A,
RG = 4.7Ω, VGS = 5V
(see Figure 10)
td(on)
tr
Turn-on delay time
Rise time
22
ns
ns
165
VDD = 15V, ID = 35A,
RG = 4.7Ω, VGS = 5V
(see Figure 10)
td(off)
tf
Turn-off delay time
Fall time
21
25
ns
ns
Table 8.
Symbol
Source drain diode
Parameter
Test Conditions
Min. Typ. Max. Unit
ISD
Source-drain current
70
A
A
(1)
ISDM
Source-drain current (pulsed)
280
(2)
VSD
Forward on voltage
ISD = 70A, VGS = 0
1.3
V
trr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 70A, di/dt = 100A/µs
VDD = 20V, Tj = 150°C
(see Figure 15)
42
52
ns
nC
A
Qrr
IRRM
2.5
1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
5/13
Electrical characteristics
STB70NFS03L
2.1
Electrical characteristics (curves)
Figure 1.
Output characterisics
Figure 2.
Transfer characteristics
Figure 3. Source-drain diode forward
characteristics
Figure 4. Static drain-source on resistance
Figure 5. Gate charge vs gate-source voltage Figure 6. Capacitance variations
6/13
STB70NFS03L
Electrical characteristics
Figure 7. Normalized gate threshold voltage Figure 8. Normalized on resistance vs
vs temperature temperature
Figure 9. Normalized BV
temperature
voltage vs
DSS
7/13
Test circuits
STB70NFS03L
3
Test circuits
Figure 10. Switching times test circuit for
resistive load
Figure 11. Gate charge test circuit
Figure 12. Test circuit for inductive load
switching and diode recovery times
Figure 13. Unclamped inductive load test
circuit
Figure 14. Unclamped inductive waveform
Figure 15. Switching time waveform
8/13
STB70NFS03L
Package mechanical data
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
9/13
Package mechanical data
STB70NFS03L
D2PAK MECHANICAL DATA
mm.
inch
TYP.
DIM.
MIN.
4.4
TYP
MAX.
4.6
MIN.
0.173
0.098
0.001
0.027
0.044
0.017
0.048
0.352
MAX.
0.181
0.106
0.009
0.036
0.067
0.023
0.053
0.368
A
A1
A2
B
2.49
0.03
0.7
2.69
0.23
0.93
1.7
B2
C
1.14
0.45
1.23
8.95
0.6
C2
D
1.36
9.35
D1
E
8
0.315
0.334
10
10.4
0.393
E1
G
8.5
4.88
15
5.28
15.85
1.4
0.192
0.590
0.050
0.055
0.094
0.208
0.625
0.055
0.068
0.126
L
L2
L3
M
1.27
1.4
1.75
3.2
2.4
R
0.4
0.015
V2
0º
4º
1
10/13
STB70NFS03L
Packaging mechanical data
5
Packaging mechanical data
2
D PAK FOOTPRINT
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
mm
MIN. MAX. MIN. MAX.
330 12.992
inch
DIM.
A
B
C
D
G
N
T
1.5
12.8
20.2
24.4
100
0.059
13.2 0.504 0.520
0795
26.4 0.960 1.039
3.937
30.4
1.197
BASE QTY
BULK QTY
1000
TAPE MECHANICAL DATA
1000
mm
inch
DIM.
MIN. MAX. MIN. MAX.
10.5 10.7 0.413 0.421
15.7 15.9 0.618 0.626
A0
B0
D
1.5
1.6 0.059 0.063
D1
E
1.59 1.61 0.062 0.063
1.65 1.85 0.065 0.073
F
11.4
4.8
3.9
11.9
1.9
50
11.6 0.449 0.456
5.0 0.189 0.197
4.1 0.153 0.161
12.1 0.468 0.476
2.1 0.075 0.082
1.574
K0
P0
P1
P2
R
T
0.25 0.35 0.0098 0.0137
23.7 24.3 0.933 0.956
W
* on sales type
11/13
Revision history
STB70NFS03L
6
Revision history
Table 9.
Date
Revision history
Revision
Changes
New datasheet according to PCN DSG/CT/2C13 marking:
STB70NFS03l@
09-Sep-2004
05-Jul-2006
8
9
New template, new value on Table 4.: On /off states
12/13
STB70NFS03L
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