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STB75NF75TRL [STMICROELECTRONICS]

75A, 75V, 0.013ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, D2PAK-3;
STB75NF75TRL
型号： STB75NF75TRL
厂家： ST    ST
描述：

75A, 75V, 0.013ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, D2PAK-3
文件： 总11页 (文件大小：474K)
中文：  中文翻译
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STB75NF75  
STP75NF75 STP75NF75FP  
N-CHANNEL 75V - 0.0095 Ω - 80A TO-220/TO-220FP/D²PAK  
STripFET™ II POWER MOSFET  
V
R
I
D
TYPE  
DSS  
DS(on)  
STB75NF75  
STP75NF75  
STP75NF75FP  
75 V  
75 V  
75 V  
<0.011 Ω  
<0.011 Ω  
<0.011 Ω  
80 A  
80 A  
80 A(*)  
■
■
■
■
TYPICAL R (on) = 0.0095 Ω  
DS  
3
3
1
2
EXCEPTIONAL dv/dt CAPABILITY  
1
100% AVALANCHE TESTED  
2
D PAK  
TO-263  
TO-220FP  
2
SURFACE-MOUNTING D PAK (TO-263)  
POWER PACKAGE IN TAPE & REEL  
(SUFFIX “T4”)  
(Suffix “T4”)  
3
2
1
DESCRIPTION  
TO-220  
This MOSFET series realized with STMicroelectronics  
unique STripFET™ process has specifically been de-  
signed to minimize input capacitance and gate charge. It  
is therefore suitable as primary switch in advanced high-  
efficiency, high-frequency isolated DC-DC converters for  
Telecom and Computer applications. It is also intended for  
any applications with low gate drive requirements.  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
■
■
■
■
SOLENOID AND RELAY DRIVERS  
DC MOTOR CONTROL  
DC-DC CONVERTERS  
AUTOMOTIVE ENVIRONMENT  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
Unit  
STB75NF75  
STP75NF75FP  
STP75NF75  
V
Drain-source Voltage (V = 0)  
75  
75  
V
V
DS  
GS  
V
Drain-gate Voltage (R = 20 kΩ)  
DGR  
GS  
V
GS  
Gate- source Voltage  
± 20  
V
I
Drain Current (continuous) at T = 25°C  
80  
70  
80(*)  
70(*)  
320(*)  
45  
A
D
C
I
Drain Current (continuous) at T = 100°C  
A
D
C
I
(•)  
Drain Current (pulsed)  
320  
300  
2.0  
A
DM  
P
Total Dissipation at T = 25°C  
W
tot  
C
Derating Factor  
0.3  
W/°C  
V/ns  
mJ  
V
(1)  
(2)  
Peak Diode Recovery voltage slope  
Single Pulse Avalanche Energy  
Insulation Withstand Voltage (DC)  
Storage Temperature  
12  
dv/dt  
E
700  
AS  
V
ISO  
------  
2000  
T
stg  
-55 to 175  
°C  
T
Operating Junction Temperature  
j
(•) Pulse width limited by safe operating area.  
(*) Refer to SOA for the max allowable current values on FP-type  
due to Rth value  
(1) I ≤80A, di/dt ≤300A/µs, V ≤ V  
, T ≤ T  
SD  
DD  
(BR)DSS j JMAX  
o
(2) Starting T = 25 C, I = 40A, V = 37.5V  
j
D
DD  
June 2003  
1/11  
NEW DATASHEET ACCORDING TO PCN DSG20023123 MARKING: P75NF75 @  
STB75NF75 STP75NF75 STP75NF75FP  
THERMAL DATA  
2
D PAK  
TO-220FP  
TO-220  
Rthj-case  
Thermal Resistance Junction-case  
Max  
0.5  
3.33  
°C/W  
Thermal Resistance Junction-ambient  
Maximum Lead Temperature For Soldering Purpose  
( 1.6 mm from case, for 10 sec.)  
62.5  
300  
°C/W  
°C  
Rthj-amb  
Max  
T
l
ELECTRICAL CHARACTERISTICS (T  
= 25 °C unless otherwise specified)  
case  
OFF  
Symbol  
Parameter  
Drain-source  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
I
= 250 µA, V = 0  
D
GS  
V
75  
V
(BR)DSS  
Breakdown Voltage  
V
= Max Rating  
DS  
Zero Gate Voltage  
1
10  
µA  
µA  
I
DSS  
Drain Current (V = 0)  
V
DS  
= Max Rating T = 125°C  
GS  
C
Gate-body Leakage  
V
GS  
= ± 20 V  
±100  
nA  
I
GSS  
Current (V = 0)  
DS  
(*)  
ON  
Symbol  
Parameter  
Test Conditions  
Min.  
Typ.  
3
Max.  
4
Unit  
V
V
GS(th)  
V
V
= V  
I
= 250 µA  
D
Gate Threshold Voltage  
2
DS  
GS  
GS  
= 10 V  
I
= 40 A  
Static Drain-source On  
Resistance  
0.0095  
0.011  
Ω
R
D
DS(on)  
DYNAMIC  
Symbol  
Parameter  
Test Conditions  
= 15 V = 40 A  
Min.  
Typ.  
Max.  
Unit  
(*)  
V
V
I
D
g
fs  
Forward Transconductance  
20  
S
DS  
DS  
= 25V, f = 1 MHz, V = 0  
C
Input Capacitance  
Output Capacitance  
Reverse Transfer  
Capacitance  
3700  
730  
240  
pF  
pF  
pF  
iss  
GS  
C
oss  
C
rss  
2/11  
STB75NF75 STP75NF75 STP75NF75FP  
ELECTRICAL CHARACTERISTICS (continued)  
SWITCHING ON  
Symbol  
Parameter  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
V
R
= 37.5 V  
= 4.7 Ω  
I
= 45 A  
= 10 V  
Turn-on Delay Time  
Rise Time  
25  
25  
ns  
ns  
t
DD  
D
d(on)  
V
t
r
G
GS  
(Resistive Load, Figure 3)  
Q
V
= 60 V I = 80 A V = 10V  
D GS  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
117  
27  
47  
160  
nC  
nC  
nC  
g
DD  
Q
gs  
Q
gd  
SWITCHING OFF  
Symbol  
Parameter  
Test Conditions  
Min.  
Min.  
Typ.  
Max.  
Unit  
V
R
= 37.5 V  
I
D
= 45 A  
Turn-off Delay Time  
Fall Time  
66  
30  
ns  
ns  
t
DD  
d(off)  
= 4.7 Ω  
V
GS  
= 10 V  
t
G
f
(Resistive Load, Figure 3)  
SOURCE DRAIN DIODE  
Symbol  
Parameter  
Test Conditions  
Typ.  
Max.  
Unit  
I
Source-drain Current  
Source-drain Current (pulsed)  
80  
320  
A
A
SD  
( )  
•
I
SDM  
(*)  
I
I
= 80 A  
V
= 0  
GS  
V
Forward On Voltage  
1.5  
V
SD  
SD  
SD  
t
= 80 A  
= 25 V  
di/dt = 100A/µs  
T = 150°C  
Reverse Recovery Time  
Reverse Recovery Charge  
Reverse Recovery Current  
132  
660  
10  
ns  
nC  
A
rr  
Q
V
rr  
DD  
j
I
(see test circuit, Figure 5)  
RRM  
(*)  
(
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.  
•)Pulse width limited by safe operating area.  
Safe Operating Area  
Safe Operating Area for TO-220FP  
3/11  
STB75NF75 STP75NF75 STP75NF75FP  
Thermal Impedance  
Thermal Impedance for TO-220FP  
Output Characteristics  
Transfer Characteristics  
Transconductance  
Static Drain-source On Resistance  
4/11  
STB75NF75 STP75NF75 STP75NF75FP  
Gate Charge vs Gate-source Voltage  
Capacitance Variations  
Normalized Gate Threshold Voltage vs Temperature  
Normalized on Resistance vs Temperature  
Source-drain Diode Forward Characteristics  
Normalized Breakdown Voltage Temperature  
5/11  
STB75NF75 STP75NF75 STP75NF75FP  
Fig. 1: Unclamped Inductive Load Test Circuit  
Fig. 2: Unclamped Inductive Waveform  
Fig. 3: Switching Times Test Circuits For Resistive  
Fig. 4: Gate Charge test Circuit  
Load  
Fig. 5: Test Circuit For Inductive Load Switching  
And Diode Recovery Times  
6/11  
STB75NF75 STP75NF75 STP75NF75FP  
D PAK MECHANICAL DATA  
mm.  
2
inch.  
TYP.  
DIM.  
MIN.  
4.4  
TYP.  
MAX.  
4.6  
MIN.  
0.173  
0.098  
0.001  
0.028  
0.045  
0.018  
0.048  
0.352  
TYP.  
0.181  
0.106  
0.009  
0.037  
0.067  
0.024  
0.054  
0.368  
A
A1  
A2  
B
2.49  
0.03  
0.7  
2.69  
0.23  
0.93  
1.7  
B2  
C
1.14  
0.45  
1.21  
8.95  
0.6  
C2  
D
1.36  
9.35  
D1  
E
8
0.315  
0.334  
10  
8.5  
4.88  
15  
10.4  
0.394  
0.409  
E1  
G
5.28  
15.85  
1.4  
0.192  
0.591  
0.050  
0.055  
0.094  
0.208  
0.624  
0.055  
0.069  
0.126  
L
L2  
L3  
M
1.27  
1.4  
2.4  
1.75  
3.2  
R
0.4  
0.016  
V2  
0°  
8°  
0°  
8°  
7/11  
STB75NF75 STP75NF75 STP75NF75FP  
TO-220 MECHANICAL DATA  
mm.  
TYP.  
inch.  
TYP.  
DIM.  
MIN.  
4.4  
MAX.  
4.6  
MIN.  
0.173  
0.048  
0.094  
0.019  
0.024  
0.044  
0.044  
0.194  
0.094  
0.393  
TYP.  
0.181  
0.051  
0.107  
0.027  
0.034  
0.067  
0.067  
0.203  
0.106  
0.409  
A
C
1.23  
2.40  
0.49  
0.61  
1.14  
1.14  
4.95  
2.40  
10  
1.32  
2.72  
0.70  
0.88  
1.70  
1.70  
5.15  
2.70  
10.40  
D
E
F
F1  
F2  
G
G1  
H2  
L2  
L3  
L4  
L5  
L6  
L7  
L9  
DIA  
16.40  
28.90  
0.645  
1.137  
13  
14  
0.511  
0.104  
0.600  
0.244  
0.137  
0.147  
0.551  
0.116  
0.620  
0.260  
0.154  
0.151  
2.65  
15.25  
6.20  
3.50  
3.75  
2.95  
15.75  
6.60  
3.93  
3.85  
8/11  
STB75NF75 STP75NF75 STP75NF75FP  
TO-220FP MECHANICAL DATA  
mm  
inch  
TYP.  
DIM.  
MIN.  
4.4  
TYP.  
MAX.  
4.6  
2.7  
2.75  
0.7  
1
MIN.  
0.173  
0.098  
0.098  
0.017  
0.030  
0.045  
0.045  
0.195  
0.094  
0.393  
MAX.  
0.181  
0.106  
0.108  
0.027  
0.039  
0.067  
0.067  
0.204  
0.106  
0.409  
A
B
2.5  
D
2.5  
E
0.45  
0.75  
1.15  
1.15  
4.95  
2.4  
F
F1  
F2  
G
1.7  
1.7  
5.2  
2.7  
10.4  
G1  
H
10  
L2  
L3  
L4  
L6  
L7  
Ø
16  
0.630  
28.6  
9.8  
15.9  
9
30.6  
10.6  
16.4  
9.3  
1.126  
0.385  
0.626  
0.354  
0.118  
1.204  
0.417  
0.645  
0.366  
0.126  
3
3.2  
L3  
L6  
L7  
¯
1 2 3  
L4  
L2  
9/11  
STB75NF75 STP75NF75 STP75NF75FP  
D2PAK FOOTPRINT  
TUBE SHIPMENT (no suffix)*  
TAPE AND REEL SHIPMENT (suffix ”T4”)*  
REEL MECHANICAL DATA  
mm  
inch  
MAX.  
DIM.  
MIN.  
MAX.  
MIN.  
A
B
C
D
G
N
T
330  
12.992  
0.520  
1.039  
1.197  
1.5  
12.8  
20.2  
24.4  
100  
0.059  
0.504  
0.795  
0.960  
3.937  
13.2  
26.4  
30.4  
BASE QTY  
BULK QTY  
1000  
1000  
TAPE MECHANICAL DATA  
mm  
inch  
DIM.  
MIN.  
10.5  
15.7  
1.5  
MAX.  
10.7  
15.9  
1.6  
MIN.  
0.413  
0.618  
0.059  
0.062  
0.065  
0.449  
0.189  
0.153  
0.468  
0075  
MAX.  
0.421  
0.626  
0.063  
0.063  
0.073  
0.456  
0.197  
0.161  
0.476  
0.082  
A0  
B0  
D
D1  
E
1.59  
1.65  
11.4  
4.8  
1.61  
1.85  
11.6  
5.0  
F
K0  
P0  
P1  
P2  
R
3.9  
4.1  
11.9  
1.9  
12.1  
2.1  
50  
1.574  
T
0.25  
23.7  
0.35  
24.3  
.0.0098 0.0137  
0.933 0.956  
W
* on sales type  
10/11  
STB75NF75 STP75NF75 STP75NF75FP  
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences  
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted  
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject  
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not  
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.  
The ST logo is registered trademark of STMicroelectronics  
2002 STMicroelectronics - All Rights Reserved  
All other names are the property of their respective owners.  
STMicroelectronics GROUP OF COMPANIES  
Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco -  
Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.  
http://www.st.com  
11/11  

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