STB80NE03L-06_06 [STMICROELECTRONICS]
N-channel 30V - 0.005ohm - 85A - D2PAK STripFET TM Power MOSFET; N沟道30V - 0.005ohm - 85A - D2PAK的STripFET TM功率MOSFET
| 型号： | STB80NE03L-06_06 |
| 厂家： | 
ST |
| 描述： | N-channel 30V - 0.005ohm - 85A - D2PAK STripFET TM Power MOSFET |
| 文件： | 总13页 (文件大小：406K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STB80NE03L-06
N-channel 30V - 0.005Ω - 85A - D2PAK
STripFET™ Power MOSFET
General features
Type
VDSS
RDS(on)
ID
STB80NE03L-06
30V
<0.006Ω
80A
■ Exceptional dv/dt capability
■ Low gate charge 100°C
■ 100% Avalanche tested
3
1
2
D PAK
Description
This Power MOSFET is the latest development of
STMicroelectronics unique “Single Feature
Size™” strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
therefore a remarkable manufacturing
reproducibility.
Internal schematic diagram
Applications
■ Switching application
Order codes
Part number
Marking
Package
Packaging
STB80NE03L-06
B80NE03L
D²PAK
Tape & reel
July 2006
Rev 6
1/13
www.st.com
13
Contents
STB80NE03L-06
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
4
5
6
Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2/13
STB80NE03L-06
Electrical ratings
1
Electrical ratings
Table 1.
Symbol
Absolute maximum ratings
Parameter
Value
Unit
VDS
VDGR
VGS
ID
Drain-source voltage (VGS = 0)
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
30
30
20
80
60
320
1
V
V
V
A
A
A
Drain current (continuous) at TC = 25°C
Drain current (continuous) at TC = 100°C
Drain current (pulsed)
ID
(1)
IDM
Derating factor
PTOT
Total dissipation at TC = 25°C
Peak diode recovery voltage slope
150
7
W
dv/dt (2)
V/ns
TJ
Operating junction temperature
Storage temperture
-55 to 175
°C
Tstg
1. Pulse width limited by safe operating area
2. ISD < 20A, di/dt < 100A/µs, VDD = 80% V(BR)DSS
Table 2.
Symbol
Thermal resistance
Parameter
Value
Unit
RthJC
RthJA
Thermal resistance junction-case Max
Thermal resistance junction-ambient Max
1
°C/W
°C/W
62.5
Maximum lead temperature for soldering
purpose
Tl
300
°C
Table 3.
Symbol
Avalanche characteristics
Parameter
Max Value
Unit
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
IAR
80
A
Single pulse avalanche energy
EAS
600
mJ
(starting Tj=25°C, Id=Iar, Vdd=50V)
3/13
Electrical characteristics
STB80NE03L-06
2
Electrical characteristics
(T
= 25°C unless otherwise specified)
CASE
Table 4.
Symbol
On/off states
Parameter
Test conditions
Min.
Typ.
Max. Unit
Drain-source breakdown
voltage
V(BR)DSS
ID = 250µA, VGS= 0
30
V
VDS = Max rating,
1
µA
µA
Zero gate voltage drain
current (VGS = 0)
IDSS
VDS = Max rating @125°C
10
Gate body leakage current
(VDS = 0)
IGSS
VDS
=
20V
100
2.5
nA
V
VGS(th) Gate threshold voltage
VDS= VGS, ID = 250µA
1
1.7
VGS = 10 V, ID = 40A
VGS = 4.5 V, ID = 40A
0.005
0.006
0.008
Ω
Ω
Static drain-source on
resistance
RDS(on)
Table 5.
Symbol
Dynamic
Parameter
Test conditions
Min.
Typ.
Max. Unit
VDS > ID(on) x RDS(on)max,
ID = 40A
(1)
Forward transconductance
30
50
S
gfs
Input capacitance
Ciss
Coss
Crss
6500
1500
500
pF
pF
pF
VDS = 25V, f = 1 MHz,
Output capacitance
VGS =0
Reverse Transfer
Capacitance
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
95
30
44
130
nC
nC
nC
VDD = 24 V, ID = 80A,
VGS = 5V
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Table 6.
Symbol
Switching times
Parameter
Test conditions
Min.
Typ.
Max. Unit
td(on)
tr
Turn-on delay time
Rise time
VDD = 15 V, ID = 40 A
RG = 4.7Ω VGS = 4.5 V
Figure 12.
40
55
ns
ns
260
350
tr(Voff)
Off-voltage rise time
Fall time
VDD = 24 V, ID = 80 A,
RG = 4.7Ω, VGS = 5V
Figure 12.
70
95
ns
ns
ns
tf
165
250
220
340
tc
Cross over time
4/13
STB80NE03L-06
Electrical characteristics
Min Typ. Max Unit
Table 7.
Source drain diode
Parameter
Symbol
Test conditions
ISD
Source-drain current
80
A
A
(1)
Source-drain current (pulsed)
320
ISDM
(2)
ISD = 80A, VGS = 0
Forward on voltage
1.5
V
VSD
ISD = 80 A,
di/dt = 100A/µs, VDD = 15
V, TJ = 150°C
trr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
75
0.14
4
ns
nC
A
Qrr
IRRM
Figure 15.
1. Pulse with limited by safe operating area
2. Pulsed: pulse duration = 300µs, duty cycle 1.5%
5/13
Electrical characteristics
STB80NE03L-06
2.1
Electrical characteristics (curves)
Figure 1. Safe operating area
Figure 2. Thermal impedance
Figure 3. Output characterisics
Figure 4. Transfer characteristics
Figure 5. Transconductance
Figure 6. Static drain-source on resistance
6/13
STB80NE03L-06
Electrical characteristics
Figure 7. Gate charge vs gate-source voltage Figure 8. Capacitance variations
Figure 9. Normalized gate threshold voltage Figure 10. Normalized on resistance vs
vs temperature
temperature
Figure 11. Source-drain diode forward
characteristics
7/13
Test circuit
STB80NE03L-06
3
Test circuit
Figure 12. Switching times test circuit for
resistive load
Figure 13. Gate charge test circuit
Figure 14. Test circuit for inductive load
switching and diode recovery times
Figure 15. Unclamped inductive load test
circuit
Figure 16. Unclamped inductive waveform
8/13
STB80NE03L-06
Package mechanical data
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
9/13
Package mechanical data
STB80NE03L-06
2
TO-263 (D PAK) MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
4.4
TYP.
MAX.
4.6
MIN.
0.173
0.098
0.027
0.044
0.017
0.048
0.352
0.393
0.192
0.590
0.050
0.055
MAX.
0.181
0.106
0.036
0.067
0.023
0.053
0.368
0.409
0.208
0.624
0.055
0.068
A
A1
B
2.49
0.7
2.69
0.93
1.7
B2
C
1.14
0.45
1.23
8.95
10
0.6
C2
D
1.36
9.35
10.4
5.28
15.85
1.4
E
G
4.88
15
L
L2
L3
1.27
1.4
1.75
D
A
C
C2
DETAIL "A"
DETAIL "A"
A1
B
B2
E
G
L3
L2
L
P011P6/F
10/13
STB80NE03L-06
Packaging mechanical data
5
Packaging mechanical data
2
D PAK FOOTPRINT
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
mm
MIN. MAX. MIN. MAX.
330 12.992
inch
DIM.
A
B
C
D
G
N
T
1.5
12.8
20.2
24.4
100
0.059
13.2 0.504 0.520
0795
26.4 0.960 1.039
3.937
30.4
1.197
BASE QTY
BULK QTY
1000
TAPE MECHANICAL DATA
1000
mm
inch
DIM.
MIN. MAX. MIN. MAX.
10.5 10.7 0.413 0.421
15.7 15.9 0.618 0.626
A0
B0
D
1.5
1.6 0.059 0.063
D1
E
1.59 1.61 0.062 0.063
1.65 1.85 0.065 0.073
F
11.4
4.8
3.9
11.9
1.9
50
11.6 0.449 0.456
5.0 0.189 0.197
4.1 0.153 0.161
12.1 0.468 0.476
2.1 0.075 0.082
1.574
K0
P0
P1
P2
R
T
0.25 0.35 0.0098 0.0137
23.7 24.3 0.933 0.956
W
* on sales type
11/13
Revision history
STB80NE03L-06
6
Revision history
Table 8.
Date
Revision history
Revision
Changes
21-Jun-2004
25-Jul-2006
5
6
Preliminary version
New template, SOA updated
12/13
STB80NE03L-06
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13/13
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