STB80NF12 [STMICROELECTRONICS]
N-CHANNEL 120V-0.013ohm-80A TO-220/TO-247/TO-220FP/DPAK STripFET⑩ II POWER MOSFET; N沟道120V - 0.013ohm -80A TO- 220 / TO- 247 / TO- 220FP / DPAK STripFET⑩ II功率MOSFET
| 型号： | STB80NF12 |
| 厂家： | 
ST |
| 描述： | N-CHANNEL 120V-0.013ohm-80A TO-220/TO-247/TO-220FP/DPAK STripFET⑩ II POWER MOSFET |
| 文件： | 总12页 (文件大小：503K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STB80NF12 STW80NF12
STP80NF12 STP80NF12FP
N-CHANNEL 120V-0.013Ω-80A TO-220/TO-247/TO-220FP/D²PAK
STripFET™ II POWER MOSFET
V
R
I
D
TYPE
DSS
DS(on)
TO-220
TO-220FP
STB80NF12
STP80NF12
STP80NF12FP
STW80NF12
120 V
120 V
120 V
120 V
<0.018 Ω
<0.018 Ω
<0.018 Ω
<0.018 Ω
80 A(*)
80 A(*)
80 A(*)
80 A(*)
3
3
2
1
2
1
■
■
■
■
TYPICAL R (on) = 0.013Ω
DS
EXCEPTIONAL dv/dt CAPABILITY
100% AVALANCHE TESTED
TO-247
APPLICATION ORIENTED
²
D PAK
CHARACTERIZATION
TO-263
(Suffix “T4”)
²
■
SURFACE-MOUNTING D PAK (TO-263)
POWER PACKAGE IN TUBE (NO SUFFIX) OR
IN TAPE & REEL (SUFFIX “T4”)
3
1
DESCRIPTION
INTERNAL SCHEMATIC DIAGRAM
This MOSFET series realized with STMicroelectronics
unique STripFET process has specifically been designed
to minimize input capacitance and gate charge. It is
therefore suitable as primary switch in advanced high-
efficiency, high-frequency isolated DC-DC converters for
Telecom and Computer applications. It is also intended
for any applications with low gate drive requirements.
APPLICATIONS
■
HIGH-EFFICIENCY DC-DC CONVERTERS
■
UPS AND MOTOR CONTROL
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
STB_P_W80NF12
STP80NF12FP
V
Drain-source Voltage (V = 0)
120
120
± 20
V
V
DS
GS
V
Drain-gate Voltage (R = 20 kΩ)
DGR
GS
V
GS
Gate- source Voltage
V
I (*)
Drain Current (continuous) at T = 25°C
80
60
80(#)
60(#)
320(#)
45
A
D
C
I
D
Drain Current (continuous) at T = 100°C
A
C
I
(•)
DM
Drain Current (pulsed)
320
300
2.0
A
P
Total Dissipation at T = 25°C
W
tot
C
Derating Factor
0.3
W/°C
V/ns
mJ
V
(1)
(2)
Peak Diode Recovery voltage slope
Single Pulse Avalanche Energy
Insulation Withstand Voltage (DC)
Storage Temperature
10
dv/dt
E
700
AS
V
ISO
------
2500
T
stg
-55 to 175
°C
T
Operating Junction Temperature
j
(•) Pulse width limited by safe operating area.
(#) Refer to SOA for the max allovable currente values on FP-type
due to thermal resistance value.
(*) Limited by Package
o
(2) I ≤35A, di/dt ≤300A/µs, V ≤ V
, T ≤ T
(1) Starting T = 25 C, I = 40A, V = 45V
SD
DD
(BR)DSS
j
JMAX.
j
D
DD
March 2003
1/12
STB80NF12 STW80NF12 STP80NF12 STP80NF12FP
THERMAL DATA
2
D PAK
TO-247
TO-220FP
TO-220
Rthj-case
Thermal Resistance Junction-case
Max
0.5
0.5
3.33
°C/W
Rthj-amb
Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose
Max
50
300
62.5
300
62.5
300
°C/W
°C
T
l
ELECTRICAL CHARACTERISTICS (T
= 25 °C unless otherwise specified)
case
OFF
Symbol
Parameter
Drain-source
Test Conditions
Min.
Typ.
Max.
Unit
I
= 250 µA, V = 0
120
V
V
D
GS
(BR)DSS
Breakdown Voltage
V
V
= Max Rating
= Max Rating T = 125°C
Zero Gate Voltage
1
10
µA
µA
I
DS
DSS
Drain Current (V = 0)
GS
DS
GS
C
Gate-body Leakage
V
= ± 20V
±100
nA
I
GSS
Current (V = 0)
DS
(1)
ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
V
GS(th)
V
V
= V
I
= 250 µA
D
Gate Threshold Voltage
2
DS
GS
GS
= 10 V
I
= 40 A
Static Drain-source On
Resistance
0.013
0.018
Ω
R
D
DS(on)
DYNAMIC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
(*)
V
V
= 15 V
I = 40 A
g
Forward Transconductance
80
S
DS
DS
D
fs
= 25V f = 1 MHz V = 0
C
C
C
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
4300
600
230
pF
pF
pF
GS
iss
oss
rss
2/12
STB80NF12 STW80NF12 STP80NF12 STP80NF12FP
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
= 50 V
Min.
Typ.
Max.
Unit
V
R
I
= 40 A
= 10 V
GS
Turn-on Delay Time
Rise Time
40
145
ns
ns
t
DD
D
d(on)
= 4.7 Ω
V
t
r
G
(Resistive Load, Figure 3)
Q
V
= 80 V I = 80 A V = 10V
D GS
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
140
23
51
189
nC
nC
nC
g
DD
Q
Q
gs
gd
SWITCHING OFF
Symbol
Parameter
Test Conditions
= 50 V
Min.
Min.
Typ.
Max.
Unit
V
R
I
= 40 A
= 10 V
Turn-off Delay Time
Fall Time
134
115
ns
ns
t
DD
D
d(off)
= 4.7Ω,
V
GS
t
G
f
(Resistive Load, Figure 3)
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Typ.
Max.
Unit
I
Source-drain Current
Source-drain Current (pulsed)
80
320
A
A
SD
(•)
I
SDM
(*)
I
I
= 80 A
V
= 0
V
Forward On Voltage
1.3
V
SD
SD
GS
SD
t
= 80 A
= 35 V
di/dt = 100A/µs
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
155
0.85
11
ns
nC
A
rr
Q
V
T = 150°C
rr
DD
j
I
(see test circuit, Figure 5)
RRM
(*)
(
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
•)Pulse width limited by safe operating area.
Safe Operating Area
Safe Operating Area for TO-220FP
3/12
STB80NF12 STW80NF12 STP80NF12 STP80NF12FP
Thermal Impedance
Output Characteristics
Transconductance
Thermal Impedance for TO-220FP
Transfer Characteristics
Static Drain-source On Resistance
4/12
STB80NF12 STW80NF12 STP80NF12 STP80NF12FP
Gate Charge vs Gate-source Voltage
Capacitance Variations
Normalized Gate Threshold Voltage vs Temperature
Normalized on Resistance vs Temperature
Source-drain Diode Forward Characteristics
Normalized Breakdown Voltage Temperature
5/12
STB80NF12 STW80NF12 STP80NF12 STP80NF12FP
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For Resistive
Fig. 4: Gate Charge test Circuit
Load
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
6/12
STB80NF12 STW80NF12 STP80NF12 STP80NF12FP
D PAK MECHANICAL DATA
mm.
²
inch.
TYP.
DIM.
MIN.
4.4
TYP.
MAX.
4.6
MIN.
0.173
0.098
0.001
0.028
0.045
0.018
0.048
0.352
TYP.
0.181
0.106
0.009
0.037
0.067
0.024
0.054
0.368
A
A1
A2
B
2.49
0.03
0.7
2.69
0.23
0.93
1.7
B2
C
1.14
0.45
1.21
8.95
0.6
C2
D
1.36
9.35
D1
E
8
0.315
0.334
10
8.5
4.88
15
10.4
0.394
0.409
E1
G
5.28
15.85
1.4
0.192
0.591
0.050
0.055
0.094
0.208
0.624
0.055
0.069
0.126
L
L2
L3
M
1.27
1.4
2.4
1.75
3.2
R
0.4
0.016
V2
0°
8°
0°
8°
7/12
STB80NF12 STW80NF12 STP80NF12 STP80NF12FP
TO-220 MECHANICAL DATA
mm.
inch.
TYP.
DIM.
MIN.
4.4
TYP.
MAX.
4.6
MIN.
0.173
0.048
0.094
0.019
0.024
0.044
0.044
0.194
0.094
0.393
TYP.
0.181
0.051
0.107
0.027
0.034
0.067
0.067
0.203
0.106
0.409
A
C
1.23
2.40
0.49
0.61
1.14
1.14
4.95
2.40
10
1.32
2.72
0.70
0.88
1.70
1.70
5.15
2.70
10.40
D
E
F
F1
F2
G
G1
H2
L2
L3
L4
L5
L6
L7
L9
DIA
16.40
28.90
0.645
1.137
13
14
0.511
0.104
0.600
0.244
0.137
0.147
0.551
0.116
0.620
0.260
0.154
0.151
2.65
15.25
6.20
3.50
3.75
2.95
15.75
6.60
3.93
3.85
8/12
STB80NF12 STW80NF12 STP80NF12 STP80NF12FP
TO-220FP MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
4.4
TYP.
MAX.
4.6
2.7
2.75
0.7
1
MIN.
0.173
0.098
0.098
0.017
0.030
0.045
0.045
0.195
0.094
0.393
MAX.
0.181
0.106
0.108
0.027
0.039
0.067
0.067
0.204
0.106
0.409
A
B
2.5
D
2.5
E
0.45
0.75
1.15
1.15
4.95
2.4
F
F1
F2
G
1.7
1.7
5.2
2.7
10.4
G1
H
10
L2
L3
L4
L6
L7
Ø
16
0.630
28.6
9.8
15.9
9
30.6
10.6
16.4
9.3
1.126
0.385
0.626
0.354
0.118
1.204
0.417
0.645
0.366
0.126
3
3.2
L3
L6
L7
¯
1 2 3
L4
L2
9/12
STB80NF12 STW80NF12 STP80NF12 STP80NF12FP
TO-247 MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
4.7
2.2
0.4
1
TYP.
MAX.
5.3
MIN.
0.185
0.087
0.016
0.039
0.079
0.118
MAX.
0.209
0.102
0.031
0.055
0.094
0.134
A
D
2.6
E
0.8
F
1.4
F3
F4
G
2
2.4
3
3.4
10.9
0.429
H
15.3
19.7
14.2
15.9
20.3
14.8
0.602
0.776
0.559
0.626
0.779
0.582
L
L3
L4
L5
M
34.6
5.5
1.362
0.217
2
3
0.079
0.118
P025P
10/12
STB80NF12 STW80NF12 STP80NF12 STP80NF12FP
D2PAK FOOTPRINT
TUBE SHIPMENT (no suffix)*
TAPE AND REEL SHIPMENT (suffix ”T4”)*
REEL MECHANICAL DATA
mm
inch
MAX.
DIM.
MIN.
MAX.
MIN.
A
B
C
D
G
N
T
330
12.992
0.520
1.039
1.197
1.5
12.8
20.2
24.4
100
0.059
0.504
0.795
0.960
3.937
13.2
26.4
30.4
BASE QTY
BULK QTY
1000
1000
TAPE MECHANICAL DATA
mm
inch
DIM.
MIN.
10.5
15.7
1.5
MAX.
10.7
15.9
1.6
MIN.
0.413
0.618
0.059
0.062
0.065
0.449
0.189
0.153
0.468
0075
MAX.
0.421
0.626
0.063
0.063
0.073
0.456
0.197
0.161
0.476
0.082
A0
B0
D
D1
E
1.59
1.65
11.4
4.8
1.61
1.85
11.6
5.0
F
K0
P0
P1
P2
R
3.9
4.1
11.9
1.9
12.1
2.1
50
1.574
T
0.25
23.7
0.35
24.3
.0.0098 0.0137
0.933 0.956
W
* on sales type
11/12
STB80NF12 STW80NF12 STP80NF12 STP80NF12FP
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is registered trademark of STMicroelectronics
2003 STMicroelectronics - All Rights Reserved
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12/12
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